PD Design 9
PD Design 9
PD Design 9
Performkeydesignformanufacturingstepsrequiredafterthesignal routingiscomplete:
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DesignstatusatstartofDFMphase
Placement
CTS
Routing
Designfor manufacturability
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Manufacturingissues
Astrocanaddressseveralissuestoincreasemanufacturingyield: GateOxideintegrityantennafixing Viaresistanceandreliabilityextracontacts RandomParticledefectWirespreading Metalerosionmetalslotting Metalliftoffmetalslotting MetalOverEtchingmetalfill
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GateOxideIntegrity
Metalwires(antennae)placedinanEMfieldgeneratevoltagegradients. Duringthemetaleachstage,strongEMfieldsareusedtostimulatetheplasmaetchant. ResultantvoltagegradientsatMOSFETgatescandamagethethinoxide.
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AntennaRules
Aslengthofwireincreasesduringprocessing,thevoltagestressingthegateoxide increases. Antennarulesdefineacceptablelengthofwires.
*AntennaRatios:
metal2 AreaofmetalconnectedtoGate CombinedAreaofGate metal1
poly
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MetalSplittingOrlayerJumping
BeforeLayerJumping
metal3 M1 blockage
M3blockage
metal1 Unacceptableantennaarea
Gate poly
Driver diffusion
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MetalSplittingOrlayerJumping
AfterLayerJumping,tomeetAntennarules
metal3 M1 blockage
M3blockage
metal3
metal1 Acceptableantennaarea
Gate poly
Driver diffusion
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InsertingDiodes
BeforeInsertingDiodes metal3
Antennaviolationsfixingflow
Routing&related Routing&related Routing&related Routing&related Routing&related optimizations optimizations optimizations optimizations optimizations
RouteDRC violations?
No Setantennarules Search&Repair InsertAntennaDiodes forallremaining violations RemainingDesignfor
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Yes
Search&Repair
Viaresistanceandreliability
Replacingoneviawithmultipleviascanimproveyield&timing(seriesRreduction) Astroinsertsmultipleviaswithoutrerouting
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RandomParticleDefects
Randommissingorextramaterialcausesopensorshortsduringthefabricationprocess.
Conductivedefectsoutsidecritical areacausingnoshorts
Nonconductivedefectsoutside criticalareacausingnoopens
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WireSpreading+Widening
Spreadwirestoreduceshortcriticalarea
SpreadingoffTrack
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Widening
MetalErosion
Thewaferismadeflat(planarized)byaprocesscalledChemicalMechanicalPolishing (CMP) Metalsaremechanicallysofterthandielectrics:
Trytogetpicforthis
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MetalLittoff
Conductorsanddielectricshavedifferentcoefficientsofthermalexpansion:
MetalThermalExpansion
Dielectric
DielectricThermalExpansion
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MetalSlotting
Slottingwidewiresreducesthemetaldensity Slotsminimizesstressesbuildup,reducinglitofftendency PrimarilyusedonPowerandGroundtraces: Slottingparameterscanbesetlayerbylayer Slideclearance
Width
EndSpace
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Lenght
MetalOverEtching
Anarrowmetalwireseparatedfromothermetalrecievesahigherdensityofetchantthan Thenarrowmetalcangetoveretched Minimummetaldensityrulesareusedtocontrolthis.
closelyspacedwires
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Metalfill
Fillsemptytrackswithmetalshapestomeettheminimummetaldensityrules Usesupmostoftheremainingroutingresource: Nofurtherroutingorantennafixescanbedone
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