STM 32 G 491 CC
STM 32 G 491 CC
STM 32 G 491 CC
STM32G491xE
Arm® Cortex®-M4 32-bit MCU+FPU, 170 MHz / 213 DMIPS,
up to 512 KB Flash, 112 KB SRAM, rich analog, math accelerator
Datasheet - production data
Features
UFBGA
Contents
1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3 Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.1 Arm® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.2 Adaptive real-time memory accelerator (ART Accelerator) . . . . . . . . . . . 17
3.3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.4 Embedded flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.5 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.6 Multi-AHB bus matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.7 Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.8 CORDIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9 Filter mathematical accelerator (FMAC) . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.10 Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 21
3.11 Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.11.1 Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.11.2 Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11.3 Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11.4 Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
3.11.5 Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.11.6 VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
3.12 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
3.13 Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.14 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.15 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 27
3.16 DMA request router (DMAMUX) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.17 Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.17.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 28
3.17.2 Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 28
3.18 Analog-to-digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.18.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1 Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.1 Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.2 Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.3 Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.4 Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.5 Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
5.1.6 Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70
5.1.7 Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71
5.3 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73
5.3.2 Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 74
5.3.3 Embedded reset and power control block characteristics . . . . . . . . . . . 74
5.3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
5.3.5 Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77
5.3.6 Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
5.3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 100
5.3.8 Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 105
5.3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
5.3.10 Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
5.3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
5.3.12 Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
List of tables
List of figures
1 Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32G491xC/xE microcontrollers.
This document should be read with the reference manual RM0440 “STM32G4 series
advanced Arm® 32-bit MCUs”. The reference manual is available from the
STMicroelectronics website www.st.com.
For information on the Arm®(a) Cortex®-M4 core, refer to the Cortex®-M4 technical
reference manual, available from the www.arm.com website.
a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.
2 Description
256 512 256 512 256 512 256 512 256 512
Flash memory
Kbytes Kbytes Kbytes Kbytes Kbytes Kbytes Kbytes Kbytes Kbytes Kbytes
SRAM1 80 Kbytes
SRAM2 16 Kbytes
CCM SRAM 16 Kbytes
QUADSPI 1
Advanced
3 (16-bit)
motor control
General 5 (16-bit)
purpose 1 (32-bit)
Basic 2 (16-bit)
Low power 1 (16-bit)
SysTick timer 1
Timers Watchdog
timers
2
(independent,
window)
PWM channels
23 32 38 38 44
(all)
PWM channels
(except 23 26 28 28 29
complementary)
SPI(I2S)(1) 3 (2)
2C
I 3
USART 2 3
0 in LQFP48
UART 0 2
Comm. 1 in UFQFPN48
interfac
LPUART 1
es
FDCANs 2
USB device Yes
UCPD Yes
SAI Yes
RTC Yes
Tamper pins 1 2 2 3
Random number
Yes
generator
AES No
CORDIC Yes
FMAC Yes
GPIOs 26 38 in LQFP48 52 66 86
42 in UFQFPN48
Wakeup pins 2 3 4 4 5
3
12-bit ADCs
Number of channels 18 in LQFP48
11 24 32 36
19 in UFQFPN48
12-bit DAC 2
Number of channels 4 (2 external + 2 internal)
Internal voltage reference
Yes
buffer
Analog comparator 4
Operational amplifiers 4
Max. CPU frequency 170 MHz
Operating voltage 1.71 V to 3.6 V
Operating temperature Ambient operating temperature: -40 to 85 °C / -40 to 125 °C
LQFP64/
LQFP48/ UFBGA4
Packages UFQFPN32 LQFP80 LQFP100
UFQFPN48
WLCSP64
1. The SPI2/3 interfaces can work in an exclusive way in either the SPI mode or the I2S audio mode.
AHB BUS-MATRIX 5M / 8S
Cortex-M4
ACCEL/
CACHE
170 MHz I-BUS FLASH 512 KB
S-BUS
CCM SRAM 16 KB
GP-DMA2 8 Chan
@VDDA
8 Chan SRAM2 16 KB
GP-DMA1 CH1
DAC1 OUT1/OUT2
SRAM1 80 KB CH2
DMAMUX
AHB2
CH1
DAC3
CH2
RNG
@VDDA
RNB1
SAR ADC1 analog
Ain ADC
IF
SAR ADC2 POWER MNGT
CORDIC
VDD = 1.71 to 3.6V
VDD12 VOLT. REG.
SAR ADC3 IF 3.3V TO 1.2V VSS
FMAC
AHB1
RESET& IWDG
FS, SCK, SD, CLOCKCTRL Standby Interface
SAI1 VBAT = 1.55 to 3.6V
MCLK as AF
@VBAT
OSC32_IN
peripheralclocks XTAL 32kHz
and system OSC_OUT
86 AFP EXT IT.
USART WKUP
2MBps RTC AWU
RTC_OUT
4 PWM,4PWM, 16b PWM BKPREG
TIMER20 RTC_TS
ETR,BKIN as F CRC RTC_TAMPx
4 PWM,4PWM, 16b PWM RTC Interface
ETR,BKIN as F TIMER1
CH as AF TIMER16
USART 2MBps 16b
PWRCTRL
LP_UART1 RX, TX as AF
16b
APB2
CH as AF16b TIMER17
USART 2MBps WinWATCHDOG
I2C1&2&3 SCL, SDA, SMBAL as AF
LP timer1
Smcard RX, TX, SCK,
APB2 60MHzAPB1
CAN1&2 RX,TX as AF
SysCfg
PHY
@VDDA USBPD
FIFO
PHY
USB D+
COMP OPAMP
Vref_Buf Device D-
1,2,3,4 1,2,3,6
CC1
CC2
MSv63423V2
3 Functional overview
Cortex®-M4
DMA1 DMA2
with FPU
D-bus
S-bus
I-bus
ICode
ACCEL FLASH
DCode 512 KB
SRAM1
CCM
SRAM
SRAM2
AHB1
peripherals
AHB2
peripherals
QUADSPI
BusMatrix-S
MS52814V1
3.8 CORDIC
The CORDIC provides hardware acceleration of certain mathematical functions, notably
trigonometric, commonly used in motor control, metering, signal processing and many other
applications.
It speeds up the calculation of these functions compared to a software implementation,
allowing a lower operating frequency, or freeing up processor cycles to perform other tasks.
Cordic features
• 24-bit CORDIC rotation engine
• Circular and Hyperbolic modes
• Rotation and vectoring modes
• Functions: sine, cosine, sinh, cosh, atan, atan2, atanh, modulus, square root, natural
logarithm
• Programmable precision up to 20-bit
• Fast convergence: 4 bits per clock cycle
• Supports 16-bit and 32-bit fixed point input and output formats
• Low latency AHB slave interface
• Results can be read as soon as ready without polling or interrupt
• DMA read and write channels
FMAC features
• 16 x 16-bit multiplier
• 24+2-bit accumulator with addition and subtraction
• 16-bit input and output data
• 256 x 16-bit local memory
• Up to three areas can be defined in memory for data buffers (two input, one output),
defined by programmable base address pointers and associated size registers
• Input and output sample buffers can be circular
• Buffer “watermark” feature reduces overhead in interrupt mode
• Filter functions: FIR, IIR (direct form 1)
• AHB slave interface
• DMA read and write data channels
• VREF-, VREF+
VREF+ is the input reference voltage for ADCs and DACs. It is also the output of the
internal voltage reference buffer when enabled.
When VDDA < 2 V, VREF+ must be equal to VDDA.
When VDDA ≥ 2 V, VREF+ must be between 2 V and VDDA.
The internal voltage reference buffer supports three output voltages, which are
configured with VRS bits in the VREFBUF_CSR register:
– VREF+ = 2.048 V
– VREF+ = 2.5 V
– VREF+ = 2.9 V
VREF- is double bonded with VSSA.
During power up and power down, the following power sequence is required:
• When VDD is below 1 V, then VDDA supply must remain below VDD + 300 mV
• When VDD is above 1 V, all power supplies became independent.
During the power down phase, VDD can temporarily become lower than other supplies
only if the energy provided to the MCU remains below 1 mJ. This allows external
decoupling capacitors to be discharged with different time constants during the power
down transient phase.
3.6
VDDA
VDD
VBOR0
0.3
Invalid supply area VDDA < VDD + 300 mV VDDA independent from VDD
MSv72398V1
RTC, Stop mode without RTC). Some peripherals with wakeup capability can enable
the HSI16 RC during Stop mode, so as to get clock for processing the wakeup event.
• Standby mode: the Standby mode is used to achieve the lowest power consumption
with brown-out reset, BOR. The internal regulator is switched off to power down the
VCORE domain. The PLL, as well as the HSI16 RC oscillator and the HSE crystal
oscillator are also powered down. The RTC can remain active (Standby mode with
RTC, Standby mode without RTC). The BOR always remains active in Standby mode.
For each I/O, the software can determine whether a pull-up, a pull-down, or no resistor
shall be applied to that I/O during Standby mode. Upon entering Standby mode, SRAM
and register contents are lost except for registers in the RTC domain and standby
circuitry. The device exits Standby mode upon external reset event (NRST pin), IWDG
reset event, wakeup event (WKUP pin, configurable rising or falling edge) or RTC
event (alarm, periodic wakeup, timestamp, tamper), or when a failure is detected on
LSE (CSS on LSE).
• Shutdown mode: the Shutdown mode allows to achieve the lowest power
consumption. The internal regulator is switched off to power down the VCORE domain.
The PLL, as well as the HSI16 and LSI RC-oscillators and HSE crystal oscillator are
also powered down. The RTC can remain active (Shutdown mode with RTC, Shutdown
mode without RTC). The BOR is not available in Shutdown mode. No power voltage
monitoring is possible in this mode. Therefore, switching to the RTC domain is not
supported. SRAM and register contents are lost except for registers in the RTC
domain. The device exits Shutdown mode upon external reset event (NRST pin),
IWDG reset event, wakeup event (WKUP pin, configurable rising or falling edge) or
RTC event (alarm, periodic wakeup, timestamp, tamper).
Low-power run
Sleep
Interconnect
Stop
Run
Interconnect source Interconnect action
destination
VREFBUF
VDDA DAC, ADC
Bandgap + VREF+
Low frequency
100 nF
cut-off capacitor
MSv40197V1
TIM17_CH1
IRTIM IR_OUT
TIM16_CH1
MS30474V2
Tx/Rx FIFO X
Tx/Rx FIFO size 8
1. X = supported.
PB8-BOOT0
PA15
VSS
PB7
PB6
PB5
PB4
PB3
32 31 30 29 28 27 26 25
VDD 1 24 PA14
PF0-OSC_IN 2 23 PA13
PF1-OSC_OUT 3 22 PA12
UFQFPN32
PG10-NRST 4 21 PA11
PA0 5 20 PA10
PA1 6 19 PA9
PA2 7 18 PA8
PA3 8 17 VDD
9 10 11 12 13 14 15 16
PB0
PA4
PA5
PA6
PA7
VSSA
VDDA
VSS
MSv47174V3
PB8-BOOT0
PC10
PC11
PA15
PA14
VDD
PB9
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
VBAT 1 36 PA13
PC13 2 35 VDD
PC14-OSC32_IN 3 34 PA12
PC15-OSC32_OUT 4 33 PA11
PF0-OSC_IN 5 32 PA10
UFQFPN48
PF1-OSC_OUT 6 31 PA9
PG10-NRST 7 30 PA8
PA0 8 29 PC6
PA1 9 28 PB15
PA2 10 27 PB14
PA3 11 Exposed pad 26 PB13
PA4 12 25 PB12
13
14
15
16
17
18
19
20
21
22
23
24
VSS
PC4
PB0
PB1
PB2
VREF+
VDDA
PB10
VDD
PA5
PA6
PA7
PB11
MSv47172V1
PA15
PA14
PA13
VDD
VSS
PB9
PB7
PB6
PB5
PB4
PB3
48
47
46
45
44
43
42
41
40
39
38
37
VBAT 1 36 VDD
PC13 2 35 VSS
PC14 - OSC32_IN 3 34 PA12
PC15 - OSC32_OUT 4 33 PA11
PF0 - OSC_IN 5 32 PA10
PF1 - OSC_OUT 6 31 PA9
PG10 - NRST 7
LQFP48 30 PA8
PA0 8 29 PB15
PA1 9 28 PB14
PA2 10 27 PB13
PA3 11 26 PB12
PA4 12 25 PB11
13
14
15
16
17
18
19
20
21
22
23
24
VSS
PB0
PB1
PB2
VSSA
VREF+
VDDA
PB10
VDD
PA5
PA6
PA7
MSv42659V2
1 2 3 4 5 6 7 8
PB8-
B PA12 VSS PC10 PA15 PB6
BOOT0
VSS VBAT
PC14-
C PA11 PA10 PA13 PA14 PB4 PC13 PC1 OSC32
_IN
PC15-
PG10
D PA9 PA8 PC9 PB3 PA2 PC2
-NRST
OSC32
_OUT
PF1- PF0-
E PC7 PC8 PC6 PA5 PA4 PC3
OSC_OUT OSC_IN
MSv63424V1
PC12
PC10
PC11
PA15
PA14
PA13
VDD
VSS
PD2
PB9
PB7
PB6
PB5
PB4
PB3
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
VBAT 1 48 VDD
PC13 2 47 VSS
PC14-OSC32_IN 3 46 PA12
PC15-OSC32_OUT 4 45 PA11
PF0-OSC_IN 5 44 PA10
PF1-OSC_OUT 6 43 PA9
PG10-NRST 7 42 PA8
PC0 8 41 PC9
PC1 9 LQFP64 40 PC8
PC2 10 39 PC7
PC3 11 38 PC6
PA0 12 37 PB15
PA1 13 36 PB14
PA2 14 35 PB13
VSS 15 34 PB12
VDD 16 33 PB11
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VDDA
VSS
PB10
VDD
PA3
PA4
PA5
PA6
PA7
MSv42658V2
PC14-
C VBAT PC1 PB4 PC10 PA14 PA13 PA11
OSC32_IN
PC15-
D PG10-NRST PC2 PA4 PC4 PA10 PA9 PC9
OSC32_OUT
H VDD PA3
PA7 PB2 VDDA PB10 PB11 VDD
MSv47177V3
PB8-BOOT0
PC12
PC10
PC11
PA15
PA14
PA13
VDD
VDD
VSS
VSS
PD2
PD1
PD0
PB9
PB7
PB6
PB5
PB4
PB3
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
VBAT 1 60 PA12
PC13 2 59 PA11
PC14-OSC32_IN 3 58 PA10
PC15-OSC32_OUT 4 57 PA9
PF0-OSC_IN 5 56 PA8
PF1-OSC_OUT 6 55 PC9
PG10-NRST 7 54 PC8
PC0 8 53 PC7
PC1 9 52 PC6
PC2 10 51 VDD
PC3 11
LQFP80 50 VSS
PA0 12 49 PD10
PA1 13 48 PD9
PA2 14 47 PD8
VSS 15 46 PB15
VDD 16 45 PB14
PA3 17 44 PB13
PA4 18 43 PB12
PA5 19 42 PB11
PA6 20 41 VDD
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VSS
VDDA
PE7
PE8
PE9
PE10
PE12
PE13
PE14
PE15
PB10
PA7
PE11
MSv60826V1
PB8-BOOT0
PC12
PC10
PC11
PA15
PA14
PA13
VDD
VSS
PD7
PD6
PD5
PD4
PD3
PD2
PD1
PD0
PE1
PE0
PB9
PB7
PB6
PB5
PB4
PB3
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
80
79
78
77
76
PE2 1 75 VDD
PE3 2 74 VSS
PE4 3 73 PA12
PE5 4 72 PA11
PE6 5 71 PA10
VBAT 6 70 PA9
PC13 7 69 PA8
PC14-OSC32_IN 8 68 PC9
PC15-OSC32_OUT 9 67 PC8
PF9 10 66 PC7
PF10 11 65 PC6
PF0-OSC_IN 12 64 VDD
PF1-OSC_OUT 13 LQFP100 63 VSS
PG10-NRST 14 62 PD15
PC0 15 61 PD14
PC1 16 60 PD13
PC2 17 59 PD12
PC3 18 58 PD11
PF2 19 57 PD10
PA0 20 56 PD9
PA1 21 55 PD8
PA2 22 54 PB15
VSS 23 53 PB14
VDD 24 52 PB13
PA3 25 51 PB12
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
PC4
PC5
PB0
PB1
PB2
VSSA
VREF+
VDDA
PE7
PE8
PE9
PE10
PE12
VSS
PE13
PE14
PE15
PB10
VDD
PA4
PA5
PA6
PA7
PE11
PB11
MSv42661V3
Unless otherwise specified in brackets below the pin name, the pin function during and after
Pin name
reset is the same as the actual pin name
S Supply pin
Pin type I Input only pin
I/O Input / output pin
FT 5 V tolerant I/O
TT 3.6 V tolerant I/O
B Dedicated BOOT0 pin
NRST Bidirectional reset pin with embedded weak pull-up resistor
Option for TT or FT I/Os
I/O structure
_a I/O, with Analog switch function supplied by VDDA
_c I/O, USB Type-C PD capable
_d I/O, USB Type-C PD Dead Battery function
_f I/O, Fm+ capable
(1)
_u I/O, with USB function
Notes Unless otherwise specified by a note, all I/Os are set as floating inputs during and after reset
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin functions
Additional
Functions directly selected/enabled through peripheral registers
functions
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TRACECK, TIM3_CH1,
SAI1_CK1, TIM20_CH1,
- - - - - - - 1 PE2 I/O FT - -
SAI1_MCLK_A,
EVENTOUT
TRACED0, TIM3_CH2,
TIM20_CH2,
- - - - - - - 2 PE3 I/O FT - -
SAI1_SD_B,
EVENTOUT
TRACED1, TIM3_CH3,
- - - - - - - 3 PE4 I/O FT - SAI1_D2, TIM20_CH1N, -
SAI1_FS_A, EVENTOUT
TRACED2, TIM3_CH4,
SAI1_CK2,
- - - - - - - 4 PE5 I/O FT - TIM20_CH2N, -
SAI1_SCK_A,
EVENTOUT
TRACED3, SAI1_D1,
TIM20_CH3N, WKUP3,
- - - - - - - 5 PE6 I/O FT -
SAI1_SD_A, RTC_TAMP3
EVENTOUT
- 1 1 B8 1 C2 1 6 VBAT S - - - -
TIM1_BKIN, WKUP2,
(2) TIM1_CH1N, RTC_TAMP1,
- 2 2 C6 2 B1 2 7 PC13 I/O FT (3)
TIM8_CH4N, RTC_TS,
EVENTOUT RTC_OUT1
(2)
PC14- (3)
- 3 3 C8 3 C1 3 8 I/O FT EVENTOUT OSC32_IN
OSC32_IN
PC15- (2)
- 4 4 D8 4 D1 4 9 I/O FT (3) EVENTOUT OSC32_OUT
OSC32_OUT
TIM20_BKIN,
TIM15_CH1, SPI2_SCK,
- - - - - - - 10 PF9 I/O FT - -
QUADSPI1_BK1_IO1,
SAI1_FS_B, EVENTOUT
TIM20_BKIN2,
TIM15_CH2, SPI2_SCK,
- - - - - - - 11 PF10 I/O FT - -
QUADSPI1_CLK,
SAI1_D3, EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
I2C2_SDA,
SPI2_NSS/I2S2_WS, ADC1_IN10,
2 5 5 E8 5 E1 5 12 PF0-OSC_IN I/O FT_fa -
TIM1_CH3N, OSC_IN
EVENTOUT
ADC2_IN10,
PF1- SPI2_SCK/I2S2_CK,
3 6 6 E7 6 F1 6 13 I/O FT_a - COMP3_INM,
OSC_OUT EVENTOUT
OSC_OUT
NRST
4 7 7 D7 7 D2 7 14 PG10-NRST I/O (4) - MCO, EVENTOUT NRST
LPTIM1_IN1, TIM1_CH1,
ADC12_IN6,
- - - F8 8 E2 8 15 PC0 I/O FT_a - LPUART1_RX,
COMP3_INM
EVENTOUT
LPTIM1_OUT,
TIM1_CH2,
LPUART1_TX, ADC12_IN7,
- - - C7 9 C3 9 16 PC1 I/O TT_a -
QUADSPI1_BK2_IO0, COMP3_INP
SAI1_SD_A,
EVENTOUT
LPTIM1_IN2, TIM1_CH3,
COMP3_OUT,
- - - D6 10 D3 10 17 PC2 I/O FT_a - TIM20_CH2, ADC12_IN8
QUADSPI1_BK2_IO1,
EVENTOUT
LPTIM1_ETR,
TIM1_CH4, SAI1_D1,
TIM1_BKIN2,
- - - E6 11 G1 11 18 PC3 I/O FT_a - ADC12_IN9
QUADSPI1_BK2_IO2,
SAI1_SD_A,
EVENTOUT
TIM20_CH3,
- - - - - - - 19 PF2 I/O FT - I2C2_SMBA, -
EVENTOUT
TIM2_CH1, ADC12_IN1,
USART2_CTS, COMP1_INM,
5 8 8 G8 12 F2 12 20 PA0 I/O TT_a - COMP1_OUT, COMP3_INP,
TIM8_BKIN, TIM8_ETR, RTC_TAMP2,
TIM2_ETR, EVENTOUT WKUP1
ADC12_IN2,
RTC_REFIN, TIM2_CH2,
COMP1_INP,
USART2_RTS_DE,
6 9 9 F7 13 E3 13 21 PA1 I/O TT_a - OPAMP1_VINP,
TIM15_CH1N,
OPAMP3_VINP,
EVENTOUT
OPAMP6_VINM
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM2_CH3,
USART2_TX,
COMP2_OUT, ADC1_IN3,
COMP2_INM,
7 10 10 D5 14 F3 14 22 PA2 I/O TT_a - TIM15_CH1,
OPAMP1_VOUT,
QUADSPI1_BK1_NCS,
LPUART1_TX, WKUP4/LSCO
UCPD1_FRSTX,
- - - G7 15 G2 15 23 VSS S - - - -
- - - H8 16 H1 16 24 VDD S - - - -
TIM2_CH4, SAI1_CK1,
USART2_RX,
ADC1_IN4,
TIM15_CH2,
COMP2_INP,
8 11 11 F6 17 H2 17 25 PA3 I/O TT_a - QUADSPI1_CLK,
OPAMP1_VINM/
LPUART1_RX,
OPAMP1_VINP
SAI1_MCLK_A,
EVENTOUT
TIM3_CH2, SPI1_NSS,
ADC2_IN17,
SPI3_NSS/I2S3_WS,
9 12 12 E5 18 D4 18 26 PA4 I/O TT_a - DAC1_OUT1,
USART2_CK,
COMP1_INM
SAI1_FS_B, EVENTOUT
TIM2_CH1, TIM2_ETR, ADC2_IN13,
SPI1_SCK, DAC1_OUT2,
10 13 13 E4 19 E4 19 27 PA5 I/O TT_a -
UCPD1_FRSTX, COMP2_INM,
EVENTOUT OPAMP2_VINM
TIM16_CH1, TIM3_CH1,
TIM8_BKIN, SPI1_MISO,
TIM1_BKIN,
ADC2_IN3,
11 14 14 H7 20 G3 20 28 PA6 I/O TT_a - COMP1_OUT,
OPAMP2_VOUT
QUADSPI1_BK1_IO3,
LPUART1_CTS,
EVENTOUT
TIM17_CH1, TIM3_CH2,
TIM8_CH1N,
ADC2_IN4,
SPI1_MOSI,
COMP2_INP,
12 15 15 F5 21 H3 21 29 PA7 I/O TT_a - TIM1_CH1N,
COMP2_OUT, OPAMP1_VINP,
OPAMP2_VINP
QUADSPI1_BK1_IO2,
UCPD1_FRSTX,
TIM1_ETR, I2C2_SCL,
USART1_TX,
- 16 - G6 22 D5 22 30 PC4 I/O FT_fa - ADC2_IN5
QUADSPI1_BK2_IO3,
EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM1_CH3N,
- - - - - - 35 43 PE12 I/O FT_a - QUADSPI1_BK1_IO0, ADC3_IN16
EVENTOUT
TIM1_CH3,
- - - - - - 36 44 PE13 I/O FT_a - QUADSPI1_BK1_IO1, ADC3_IN3
EVENTOUT
TIM1_CH4,
TIM1_BKIN2,
- - - - - - 37 45 PE14 I/O FT - -
QUADSPI1_BK1_IO2,
EVENTOUT
TIM1_BKIN,
TIM1_CH4N,
- - - - - - 38 46 PE15 I/O FT - USART3_RX, -
QUADSPI1_BK1_IO3,
EVENTOUT
TIM2_CH3,
USART3_TX,
LPUART1_RX,
- 22 22 H2 30 H6 39 47 PB10 I/O TT_a - QUADSPI1_CLK, OPAMP3_VINM
TIM1_BKIN,
SAI1_SCK_A,
EVENTOUT
16 - 23 G2 31 G7 40 48 VSS S - - - -
17 23 24 H1 32 H8 41 49 VDD S - - - -
TIM2_CH4,
USART3_RX,
ADC12_IN14,
- 24 25 H3 33 H7 42 50 PB11 I/O TT_a - LPUART1_TX,
OPAMP6_VOUT
QUADSPI1_BK1_NCS,
EVENTOUT
I2C2_SMBA,
SPI2_NSS/I2S2_WS,
TIM1_BKIN,
ADC1_IN11,
- 25 26 G3 34 G8 43 51 PB12 I/O TT_a - USART3_CK,
OPAMP6_VINP
LPUART1_RTS_DE,
FDCAN2_RX,
EVENTOUT
SPI2_SCK/I2S2_CK,
TIM1_CH1N,
ADC3_IN5,
USART3_CTS,
- 26 27 G1 35 G6 44 52 PB13 I/O TT_a - OPAMP3_VINP,
LPUART1_CTS,
OPAMP6_VINP
FDCAN2_TX,
EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM15_CH1,
SPI2_MISO,
TIM1_CH2N, ADC1_IN5,
- 27 28 F2 36 F8 45 53 PB14 I/O TT_a -
USART3_RTS_DE, OPAMP2_VINP
COMP4_OUT,
EVENTOUT
RTC_REFIN,
TIM15_CH2,
TIM15_CH1N,
- 28 29 F1 37 F7 46 54 PB15 I/O FT_a - COMP3_OUT, ADC2_IN15
TIM1_CH3N,
SPI2_MOSI/I2S2_SD,
EVENTOUT
USART3_TX,
- - - - - - 47 55 PD8 I/O FT_a - -
EVENTOUT
USART3_RX,
- - - - - - 48 56 PD9 I/O TT_a - OPAMP6_VINP
EVENTOUT
USART3_CK,
- - - - - - 49 57 PD10 I/O FT_a - ADC3_IN7
EVENTOUT
USART3_CTS,
- - - - - - - 58 PD11 I/O FT_a - ADC3_IN8
EVENTOUT
TIM4_CH1,
- - - - - - - 59 PD12 I/O FT_a - USART3_RTS_DE, ADC3_IN9
EVENTOUT
- - - - - - - 60 PD13 I/O FT_a - TIM4_CH2, EVENTOUT ADC3_IN10
ADC3_IN11,
- - - - - - - 61 PD14 I/O TT_a - TIM4_CH3, EVENTOUT
OPAMP2_VINP
TIM4_CH4, SPI2_NSS,
- - - - - - - 62 PD15 I/O FT - -
EVENTOUT
- - - - - - 50 63 VSS S - - - -
- - - - - - 51 64 VDD S - - - -
TIM3_CH1, TIM8_CH1,
- 29 - E3 38 E8 52 65 PC6 I/O FT - -
I2S2_MCK, EVENTOUT
TIM3_CH2, TIM8_CH2,
- - - E1 39 E7 53 66 PC7 I/O FT - -
I2S3_MCK, EVENTOUT
TIM3_CH3, TIM8_CH3,
- - - E2 40 F6 54 67 PC8 I/O FT_f - TIM20_CH3, I2C3_SCL, -
EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM3_CH4, TIM8_CH4,
- - - D3 41 D8 55 68 PC9 I/O FT_f - I2SCKIN, TIM8_BKIN2, -
I2C3_SDA, EVENTOUT
MCO, I2C3_SCL,
I2C2_SDA, I2S2_MCK,
TIM1_CH1,
18 30 30 D2 42 E6 56 69 PA8 I/O FT_f - USART1_CK, -
TIM4_ETR, SAI1_CK2,
SAI1_SCK_A,
EVENTOUT
I2C3_SMBA, I2C2_SCL,
I2S3_MCK, TIM1_CH2,
USART1_TX,
19 31 31 D1 43 D7 57 70 PA9 I/O FT_fd (5) UCPD1_DBCC1
TIM15_BKIN,
TIM2_CH3, SAI1_FS_A,
EVENTOUT
TIM17_BKIN,
USB_CRS_SYNC,
I2C2_SMBA,
FT_d SPI2_MISO, TIM1_CH3, UCPD1_DBCC2
(5) ,
20 32 32 C2 44 D6 58 71 PA10 I/O
a USART1_RX, PVD_IN
TIM2_CH4, TIM8_BKIN,
SAI1_D1, SAI1_SD_A,
SPI2_MOSI/I2S2_SD,
TIM1_CH1N,
USART1_CTS,
COMP1_OUT,
21 33 33 C1 45 C8 59 72 PA11 I/O FT_u - USB_DM
FDCAN1_RX,
TIM4_CH1, TIM1_CH4,
TIM1_BKIN2,
EVENTOUT
TIM16_CH1, I2SCKIN,
TIM1_CH2N,
USART1_RTS_DE,
22 34 34 B1 46 B8 60 73 PA12 I/O FT_u - COMP2_OUT, USB_DP
FDCAN1_TX,
TIM4_CH2, TIM1_ETR,
EVENTOUT
- - 35 B2 47 B7 61 74 VSS S - - - -
- 35 36 A1 48 A8 62 75 VDD S - - - -
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
SWDIO-JTMS,
TIM16_CH1N,
(6) I2C1_SCL, IR_OUT,
23 36 37 C3 49 C7 63 76 PA13 I/O FT_f -
USART3_CTS,
TIM4_CH3, SAI1_SD_B,
EVENTOUT
SWCLK-JTCK,
LPTIM1_OUT,
(6) I2C1_SDA, TIM8_CH2,
24 37 38 C4 50 C6 64 77 PA14 I/O FT_f -
TIM1_BKIN,
USART2_TX,
SAI1_FS_B, EVENTOUT
JTDI, TIM2_CH1,
TIM8_CH1, TIM20_ETR,
I2C1_SCL, SPI1_NSS,
25 38 39 B4 51 A7 65 78 PA15 I/O FT_f (6) SPI3_NSS/I2S3_WS, -
USART2_RX,
UART4_RTS_DE,
TIM1_BKIN, TIM2_ETR,
TIM8_CH1N,
UART4_TX,
- 39 - B3 52 C5 66 79 PC10 I/O FT - SPI3_SCK/I2S3_CK, -
USART3_TX,
EVENTOUT
TIM8_CH2N,
UART4_RX,
- 40 - A2 53 B6 67 80 PC11 I/O FT_f - SPI3_MISO, -
USART3_RX,
I2C3_SDA, EVENTOUT
TIM8_CH3N,
UART5_TX,
SPI3_MOSI/I2S3_SD,
- - - A3 54 A6 68 81 PC12 I/O FT - -
USART3_CK,
UCPD1_FRSTX,
EVENTOUT
TIM8_CH4N,
- - - - - - 69 82 PD0 I/O FT - FDCAN1_RX, -
EVENTOUT
TIM8_CH4,
TIM8_BKIN2,
- - - - - - 70 83 PD1 I/O FT - -
FDCAN1_TX,
EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM3_ETR, TIM8_BKIN,
- - - A4 55 B5 71 84 PD2 I/O FT - -
UART5_RX, EVENTOUT
TIM2_CH1/TIM2_ETR,
USART2_CTS,
- - - - - - - 85 PD3 I/O FT - -
QUADSPI1_BK2_NCS,
EVENTOUT
TIM2_CH2,
USART2_RTS_DE,
- - - - - - - 86 PD4 I/O FT - -
QUADSPI1_BK2_IO0,
EVENTOUT
USART2_TX,
- - - - - - - 87 PD5 I/O FT - QUADSPI1_BK2_IO1, -
EVENTOUT
TIM2_CH4, SAI1_D1,
USART2_RX,
- - - - - - - 88 PD6 I/O FT - QUADSPI1_BK2_IO2, -
SAI1_SD_A,
EVENTOUT
TIM2_CH3,
USART2_CK,
- - - - - - - 89 PD7 I/O FT - -
QUADSPI1_BK2_IO3,
EVENTOUT
JTDO/TRACESWO,
TIM2_CH2, TIM4_ETR,
USB_CRS_SYNC,
TIM8_CH1N, SPI1_SCK,
(6)
26 41 40 D4 56 A5 72 90 PB3 I/O FT SPI3_SCK/I2S3_CK, -
USART2_TX,
TIM3_ETR,
SAI1_SCK_B,
EVENTOUT
JTRST, TIM16_CH1,
TIM3_CH1, TIM8_CH2N,
SPI1_MISO,
(5) SPI3_MISO,
27 42 41 C5 57 C4 73 91 PB4 I/O FT_c (6) USART2_RX, UCPD1_CC2
UART5_RTS_DE,
TIM17_BKIN,
SAI1_MCLK_B,
EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM16_BKIN,
TIM3_CH2, TIM8_CH3N,
I2C1_SMBA,
SPI1_MOSI,
SPI3_MOSI/I2S3_SD,
USART2_CK,
28 43 42 A5 58 B4 74 92 PB5 I/O FT_f - I2C3_SDA, -
FDCAN2_RX,
TIM17_CH1,
LPTIM1_IN1,
SAI1_SD_B,
UART5_CTS,
EVENTOUT
TIM16_CH1N,
TIM4_CH1, TIM8_CH1,
TIM8_ETR,
USART1_TX,
(5)
29 44 43 B5 59 A4 75 93 PB6 I/O FT_c COMP4_OUT, UCPD1_CC1
FDCAN2_TX,
TIM8_BKIN2,
LPTIM1_ETR,
SAI1_FS_B, EVENTOUT
TIM17_CH1N,
TIM4_CH2, I2C1_SDA,
TIM8_BKIN,
USART1_RX,
30 45 44 A6 60 A3 76 94 PB7 I/O FT_f - -
COMP3_OUT,
TIM3_CH4, LPTIM1_IN2,
UART4_CTS,
EVENTOUT
TIM16_CH1, TIM4_CH3,
SAI1_CK1, I2C1_SCL,
USART3_RX,
(7) COMP1_OUT,
31 46 45 B6 61 B3 77 95 PB8-BOOT0 I/O FT_f -
FDCAN1_RX,
TIM8_CH2, TIM1_BKIN,
SAI1_MCLK_A,
EVENTOUT
TIM17_CH1, TIM4_CH4,
SAI1_D2, I2C1_SDA,
IR_OUT, USART3_TX,
- 47 46 A7 62 A2 78 96 PB9 I/O FT_f - COMP2_OUT, -
FDCAN1_TX,
TIM8_CH3, TIM1_CH3N,
SAI1_FS_A, EVENTOUT
I/O structure
Pin type
Pin name
UFQFPN32
UFQFPN48
Notes
Additional
WLCSP64
UFBGA64
LQFP100
LQFP48
LQFP64
LQFP80
(function Alternate functions
functions
after reset)
TIM4_ETR,
TIM20_CH4N,
TIM16_CH1,
- - - - - - - 97 PE0 I/O FT - -
TIM20_ETR,
USART1_TX,
EVENTOUT
TIM17_CH1,
TIM20_CH4,
- - - - - - - 98 PE1 I/O FT - -
USART1_RX,
EVENTOUT
32 - 47 B7 63 B2 79 99 VSS S - - - -
1 48 48 A8 64 A1 80 100 VDD S - - - -
1. Function availability depends on the chosen device.
2. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current (3
mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
3. After a backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of
the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the reference manual RM0440 "STM32G4 Series advanced Arm®-based 32-bit
MCUs”.
4. PG10-NRST pin is FT tolerant if it is configured as PG10 GPIO by option bytes except for the startup time until option bytes
are loaded.
5. After reset, a pull-down resistor (Rd = 5.1kΩ from UCPD peripheral) can be activated on PB6, PB4 (UCPD1_CC1,
UCPD1_CC2). The pull-down on PB6 (UCPD1_CC1) is activated by high level on PA9 (UCPD1_DBCC1). The pull-down on
PB4 (UCPD1_CC2) is activated by high level on PA10 (UCPD1_DBCC2). This pull-down control (dead battery support on
UCPD peripheral) can be disabled by setting bit UCPD1_DBDIS=1 in the PWR_CR3 register. PB4, PB6 have UCPD_CC
functionality which implements an internal pull-down resistor (5.1kΩ) which is controlled by the voltage on the UCPD_DBCC
pin (PA10, PA9). A high level on the UCPD_DBCC pin activates the pull-down on the UCPD_CC pin. The pull-down effect on
the CC lines can be removed by using the bit UCPD1_DBDIS =1 (USB Type-C and power delivery dead battery disable) in
the PWR_CR3 register.
6. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4
pins and the internal pull-down on PA14 pin are activated.
7. It is recommended to set PB8 in another mode than analog mode after startup to limit consumption if the pin is left
unconnected.
STM32G491xC STM32G491xE
Table 13. Alternate function
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
PA8 MCO - I2C3_SCL - I2C2_SDA I2S2_MCK TIM1_CH1 USART1_CK - - TIM4_ETR - SAI1_CK2 - SAI1_SC
K_A
EVENT
OUT
PA13 SWDIO-
JTMS
TIM16_CH1N - - I2C1_SCL IR_OUT - USART3_CTS - - TIM4_CH3 - - SAI1_SD
_B
- EVENT
OUT
PA14 SWCLK-
JTCK
LPTIM1_OUT - - I2C1_SDA TIM8_CH2 TIM1_BKIN USART2_TX - - - - - SAI1_FS
_B
- EVENT
OUT
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
PB6 - TIM16_CH1N TIM4_CH1 - - TIM8_CH1 TIM8_ETR USART1_TX COMP4_OUT FDCAN2_TX TIM8_BKIN2 LPTIM1_
ETR
- - SAI1_FS_
B
EVENT
OUT
PB8 - TIM16_CH1 TIM4_CH3 SAI1_CK1 I2C1_SCL - - USART3_RX COMP1_OUT FDCAN1_RX TIM8_CH2 - TIM1_BKIN - SAI1_MC
LK_A
EVENT
OUT
PB9 - TIM17_CH1 TIM4_CH4 SAI1_D2 I2C1_SDA - IR_OUT USART3_TX COMP2_OUT FDCAN1_TX TIM8_CH3 - TIM1_CH3N - SAI1_FS_
A
EVENT
OUT
STM32G491xC STM32G491xE
PB12 I2C2_SMBA TIM1_BKIN USART3_CK FDCAN2_RX
S2_WS _DE OUT
PB13 - - - - - SPI2_SCK/I2
S2_CK
TIM1_CH1N USART3_CTS LPUART1_CTS FDCAN2_TX - - - - - EVENT
OUT
SPI2_MOSI/I EVENT
PB15 RTC_REFIN TIM15_CH2 TIM15_CH1N COMP3_OUT TIM1_CH3N
2S2_SD - - - - - - - - - OUT
Table 13. Alternate function (continued)
STM32G491xC STM32G491xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
OUT
- - - - - - - - - - - EVENT
Port C
SPI3_SCK/I2 EVENT
PC10 - - - - TIM8_CH1N UART4_TX
S3_CK
USART3_TX - - - - - - - OUT
PC14 - - - - - - - - - - - - - - - EVENT
OUT
PC15 - - - - - - - - - - - - - - - EVENT
OUT
65/197
Table 13. Alternate function (continued)
66/197
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
- - - - - - - - - - - -
Port D
STM32G491xC STM32G491xE
OUT
STM32G491xC STM32G491xE
AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7 AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
_B OUT
Port E
Port SAI1/TIM
COMP1/I2C3 COMP3/SAI1/ I2S2/3/Infrar I2S2/3/Infrare COMP1/2/3/4/I QUADSPI1/
LPTIM1/TIM2 I2C1/2/3/TIM FDCAN1/2/T LPTIM1/ LPUART1/S 2/15/UAR
SYS_AF /TIM1/2/3/4/8/ TIM8/15/20/U ed/SPI1/2/TI d/SPI2/3/TIM USART1/2/3 2C3/LPUART1/ TIM2/3/4/8/1 SAI1 EVENT
/15/16/17 1/8/16/17 IM1/8/15 TIM1/8 AI1/TIM1 T4/5/UCP
15/20 SB M8/UART4/5 1/8/20 UART4/5 7
D1
PF1 - - - - - SPI2_SCK/I2
S2_CK
- - - - - - - - - EVENT
OUT
Port F
PF10 - - TIM20_BKIN
2
TIM15_CH2 - SPI2_SCK - - - - QUADSPI1_
CLK
- - SAI1_D3 - EVENT
OUT
Port G
EVENT
PG10 MCO - - - - - - - - - - - - - - OUT
DS13122 Rev 4
STM32G491xC STM32G491xE
STM32G491xC STM32G491xE Electrical characteristics
5 Electrical characteristics
Figure 14. Pin loading conditions Figure 15. Pin input voltage
MS19210V1 MS19211V1
VBAT
Backup circuitry
(LSE, RTC,
1.55 – 3.6 V
Backup registers)
Power switch
VDD VCORE
n x VDD
Regulator
VDDIO
OUT
Level shifter
Kernel logic
n x 100 nF IO (CPU, Digital
GPIOs logic
+1 x 4.7 μF IN & Memories)
n x VSS
VREF+ ADCs/
DACs/
Standby circuitry
10 nF OPAMPs/ (Wakeup logic,
+1 μF VREF- COMPs/ IWDG)
100 nF +1 μF
VREFBUF
VSSA
MS60206V1
Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
IDD_VBAT
VBAT
IDD
VDD
IDDA
VDDA
MS60200V1
The IDD_ALL parameters given in Table 21 to Table 33 represent the total MCU consumption
including the current supplying VDD, VDDA and VBAT.
2. VIN maximum must always be respected. Refer to Table 15: Current characteristics for the maximum
allowed injected current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin
definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.
∑IVDD Total current into sum of all VDD power lines (source)(1) 150
∑IVSS Total current out of sum of all VSS ground lines (sink)(1) 150
(1)
IVDD(PIN) Maximum current into each VDD power pin (source) 100
IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100
Output current sunk by any I/O and control pin except FT_f 20
IIO(PIN) Output current sunk by any FT_f pin 20 mA
Output current sourced by any I/O and control pin 20
Total output current sunk by sum of all I/Os and control pins(2) 100
∑IIO(PIN)
Total output current sourced by sum of all I/Os and control pins(2) 100
IINJ(PIN)(3) Injected current on FT_xxx, TT_xx, NRST pins -5/0(4)
∑|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) ±25
1. All main power (VDD, VDDA, VBAT) and ground (VSS, VSSA) pins must always be connected to the external
power supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output
current must not be sunk/sourced between two consecutive power supply pins referring to high pin count
LQFP packages.
3. Positive injection (when VIN > VDD) is not possible on these I/Os and does not occur for input voltages
lower than the specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 14:
Voltage characteristics for the minimum allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of
the negative injected currents (instantaneous values).
Table 19. Embedded reset and power control block characteristics (continued)
Symbol Parameter Conditions(1) Min Typ Max Unit
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design - Not tested in production.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
Internal reference
VREFINT -40 °C < TA < +130 °C 1.182 1.212 1.232 V
voltage
ADC sampling time
(1) when reading the
tS_vrefint - 4(2) - - µs
internal reference
voltage
Start time of reference
tstart_vrefint voltage buffer when - - 8 12(2) µs
ADC is enable
VREFINT buffer
consumption from VDD
- - 12.5 20(2) µA
IDD(VREFINTBUF) when converted by
ADC
Internal reference
∆VREFINT voltage spread over VDD = 3 V - 5 7.5(2) mV
the temperature range
Average temperature
TCoeff -40°C < TA < +130°C - 30 50(2) ppm/°C
coefficient
ACoeff Long term stability 1000 hours, T = 25°C - 300 1000(2) ppm
Average voltage
VDDCoeff 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V
coefficient
VREFINT_DIV1 1/4 reference voltage 24 25 26
%
VREFINT_DIV2 1/2 reference voltage - 49 50 51
VREFINT
VREFINT_DIV3 3/4 reference voltage 74 75 76
1. The shortest sampling time is determined in the application by multiple iterations.
2. Guaranteed by design - Not tested in production.
V
1.235
1.23
1.225
1.22
1.215
1.21
1.205
1.2
1.195
1.19
1.185
-40 -20 0 20 40 60 80 100 120 °C
Mean Min Max
MSv40169V2
Electrical characteristics
Table 21. Current consumption in Run and Low-power run modes, code with data
processing running from Flash in single Bank, ART enable (Cache ON Prefetch OFF)
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
26 MHz 3.55 3.80 4.40 5.35 6.85 3.80 4.60 7.10 11.0 16.0
16 MHz 2.25 2.45 3.10 4.00 5.50 2.60 3.40 5.90 9.00 15.0
8 MHz 1.25 1.45 2.05 2.95 4.45 1.60 2.50 4.90 8.00 14.0
Range 2 4 MHz 0.715 0.915 1.50 2.40 3.90 1.10 2.00 4.40 7.50 13.0
2 MHz 0.445 0.645 1.25 2.15 3.60 0.850 1.70 4.10 7.20 13.0
1 MHz 0.310 0.510 1.10 2.00 3.50 0.720 1.60 4.00 7.10 13.0
100 KHz 0.195 0.390 0.990 1.90 3.35 0.600 1.40 3.90 7.00 13.0
DS13122 Rev 4
STM32G491xC STM32G491xE
Range 1 64 MHz 9.55 9.90 11.0 12.0 14.0 11.0 12.0 15.0 19.0 26.0
48 MHz 7.65 8.05 8.95 10.0 12.0 7.80 9.20 13.0 17.0 24.0
32 MHz 5.25 5.55 6.40 7.60 9.40 5.60 6.80 11.0 15.0 21.0
24 MHz 3.90 4.20 5.00 6.15 7.95 4.40 5.70 8.90 13.0 20.0
16 MHz 2.70 3.00 3.75 4.90 6.70 3.30 4.50 7.70 12.0 19.0
Table 21. Current consumption in Run and Low-power run modes, code with data
STM32G491xC STM32G491xE
processing running from Flash in single Bank, ART enable (Cache ON Prefetch OFF) (continued)
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
2 MHz 390 590 1200 2000 3500 990 2000 4900 8600 15000
fHCLK = fHSE 1 MHz 240 440 1050 1850 3350 840 1800 4700 8400 15000
all peripherals disable 250 KHz 130 330 940 1700 3250 690 1700 4700 8400 15000
Supply current 62.5 KHz 100 300 915 1700 3200 670 1700 4700 8400 15000
IDD (LPRun) in Low-power μA
run mode 2 MHz 815 1000 1600 2400 3950 1500 2600 5400 9300 16000
fHCLK = fHSI / HPRE 1 MHz 695 890 1500 2300 3800 1400 2400 5300 9100 15000
all peripherals disable 250 KHz 605 800 1400 2200 3750 1300 2200 5200 9000 15000
62.5 KHz 580 775 1400 2200 3700 1200 2300 5200 9000 15000
DS13122 Rev 4
Electrical characteristics
79/197
Table 22. Current consumption in Run and Low-power run modes,
80/197
Electrical characteristics
code with data processing running from SRAM1
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
26 MHz 3.15 3.40 4.05 4.95 6.50 3.40 4.30 6.70 9.80 15.0
16 MHz 2.00 2.25 2.85 3.75 5.30 2.40 3.20 5.60 8.80 14.0
8 MHz 1.10 1.30 1.95 2.85 4.35 1.50 2.30 4.70 7.90 13.0
Range 2 4 MHz 0.650 0.855 1.45 2.35 3.90 0.970 1.90 4.30 7.40 13.0
2 MHz 0.415 0.615 1.20 2.10 3.65 0.750 1.70 4.10 7.20 13.0
1 MHz 0.295 0.495 1.10 2.00 3.50 0.640 1.50 3.90 7.10 13.0
100 KHz 0.190 0.385 0.985 1.90 3.40 0.530 1.40 3.80 7.00 12.0
DS13122 Rev 4
STM32G491xC STM32G491xE
48 MHz 6.85 7.25 8.10 9.30 11.0 7.00 8.40 12.0 16.0 23.0
32 MHz 4.70 5.05 5.85 7.00 8.90 5.10 6.30 9.50 14.0 21.0
24 MHz 3.50 3.80 4.60 5.75 7.60 4.00 5.30 8.50 13.0 19.0
16 MHz 2.45 2.70 3.50 4.60 6.45 3.00 4.20 7.40 12.0 18.0
Table 22. Current consumption in Run and Low-power run modes,
STM32G491xC STM32G491xE
code with data processing running from SRAM1 (continued)
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
2 MHz 350 550 1150 1950 3450 840 1900 5000 8700 15000
fHCLK = fHSE 1 MHz 220 420 1050 1850 3450 710 1800 4800 8700 15000
all peripherals disable 250 KHz 120 320 930 1750 3350 610 1800 4500 8700 15000
Supply current 62.5 KHz 93.0 290 905 1750 3300 580 1800 4600 8400 15000
IDD (LPRun) in Low-power μA
run mode 2 MHz 775 970 1600 2450 4000 1500 2600 5400 9200 15000
fHCLK = fHSI / HPRE 1 MHz 670 865 1450 2350 3900 1400 2400 5300 9200 15000
all peripherals disable 250 KHz 595 790 1400 2250 3850 1300 2300 5200 8900 15000
62.5 KHz 575 770 1400 2250 3800 1300 2300 5200 8900 15000
DS13122 Rev 4
Electrical characteristics
81/197
Table 23. Typical current consumption in Run and Low-power run modes, with different codes
82/197
Electrical characteristics
running from flash memory, ART enable (Cache ON Prefetch OFF)
Conditions Typ 25°C Typ 25°C
Symbol Parameter Code Unit Unit
- Voltage scaling Single bank mode Single bank mode
STM32G491xC STM32G491xE
While(1) 23.0 135
Pseudo-dhrystone(1) 815 408
Coremark 840 420
Supply current SYSCLK source is HSI
IDD
in Low-power fHCLK = 2 MHz Dhrystone2.1 835 µA 418 µA/MHz
(LPRun)
run all peripherals disable
Fibonacci 850 425
(1)
While 795 398
1. Reduced code used for characterization results provided in Table 21.
STM32G491xC STM32G491xE
Table 24. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1
Conditions Typ 25°C Typ 25°C
Symbol Parameter Code Unit Unit
- Voltage scaling Single bank mode Single bank mode
Electrical characteristics
Pseudo-dhrystone 775 uA 388
Coremark 815 uA 408
Supply current SYSCLK source is HSI
IDD
in Low-power fHCLK = 2 MHz Dhrystone2.1 800 uA 400 µA/MHz
(LPRun) run all peripherals disable
Fibonacci 805 uA 403
While(1) 770 uA 385
1. Reduced code used for characterization results provided in Table 21.
83/197
Table 25. Typical current consumption in Run and Low-power run modes, with different codes
84/197
Electrical characteristics
running from SRAM2
Conditions Typ 25°C Typ 25°C
Symbol Parameter Code Unit Unit
- Voltage scaling Single bank mode Single bank mode
Pseudo-dhrystone 2.55 mA 98
Coremark 2.65 mA 102
Range2
Dhrystone2.1 2.55 mA 98 µA/MHz
fHCLK=26 MHz
Fibonacci 2.45 mA 94
(1)
While 2.35 mA 90
Pseudo-dhrystone 15.0 mA 100
fHCLK = fHSE up to 48 MHZ Coremark 15.5 mA 103
IDD Supply current included, bypass mode Range 1
Dhrystone2.1 15.0 mA 100 µA/MHz
(Run) in Run mode PLL ON above 48 MHz all fHCLK= 150 MHz
DS13122 Rev 4
STM32G491xC STM32G491xE
Pseudo-dhrystone 720 uA 360
Coremark 760 uA 380
Supply current SYSCLK source is HSI
IDD
in Low-power fHCLK = 2 MHz Dhrystone2.1 745 uA 373 µA/MHz
(LPRun) run all peripherals disable
Fibonacci 735 uA 368
While(1) 725 uA 363
1. Reduced code used for characterization results provided in Table 21.
Table 26. Typical current consumption in Run and Low-power run modes, with different codes
STM32G491xC STM32G491xE
running from CCM
Conditions Typ 25°C Typ 25°C
Symbol Parameter Code Unit Unit
- Voltage scaling Single bank mode Single bank mode
Electrical characteristics
IDD SYSCLK source is HSI
Supply current in
fHCLK = 2 MHz Dhrystone2.1 790 uA 395 µA/MHz
(LPRun) Low-power run
all peripherals disable
Fibonacci 830 uA 415
While(1) 820 uA 410
1. Reduced code used for characterization results provided in Table 21.
85/197
Table 27. Current consumption in Sleep and Low-power sleep mode Flash ON
86/197
Electrical characteristics
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
26 MHz 1.20 1.40 2.05 2.95 4.45 1.50 2.30 4.70 7.80 13.0
16 MHz 0.790 1.00 1.60 2.50 4.00 1.20 2.00 4.40 7.50 13.0
8 MHz 0.500 0.705 1.30 2.20 3.70 0.800 1.70 4.10 7.20 13.0
Range 2 4 MHz 0.345 0.545 1.15 2.05 3.50 0.670 1.60 4.00 7.10 13.0
2 MHz 0.265 0.460 1.05 1.95 3.45 0.600 1.50 3.90 7.00 13.0
1 MHz 0.220 0.420 1.00 1.90 3.40 0.560 1.50 3.90 7.00 13.0
100 KHz 0.185 0.380 0.980 1.85 3.35 0.530 1.40 3.80 6.90 12.0
fHCLK = fHSE Range 1
DS13122 Rev 4
up to 48 MHz Boost 170 MHz 6.45 6.80 7.70 8.95 11.0 7.30 8.70 13.0 17.0 24.0
Supply current included, bypass mode
IDD (Sleep) mA
in Sleep mode mode PLL ON
150 MHz 5.35 5.65 6.50 7.65 9.45 6.10 7.30 11.0 15.0 22.0
above 48 MHz all
peripherals disable 120 MHz 4.40 4.70 5.50 6.60 8.45 5.10 6.30 9.50 14.0 20.0
80 MHz 3.10 3.35 4.15 5.25 7.10 3.70 4.90 8.20 13.0 19.0
72 MHz 2.80 3.10 3.90 5.00 6.80 3.50 4.70 7.90 12.0 19.0
Range 1 64 MHz 2.55 2.85 3.60 4.75 6.55 3.20 4.40 7.60 12.0 19.0
48 MHz 2.40 2.75 3.55 4.70 6.50 2.70 3.80 7.00 12.0 18.0
STM32G491xC STM32G491xE
32 MHz 1.70 2.05 2.85 3.95 5.75 2.10 3.30 6.50 11.0 17.0
24 MHz 1.25 1.55 2.35 3.45 5.25 1.80 3.00 6.20 11.0 17.0
16 MHz 0.930 1.20 2.00 3.10 4.85 1.50 2.70 5.90 9.90 17.0
Table 27. Current consumption in Sleep and Low-power sleep mode Flash ON (continued)
STM32G491xC STM32G491xE
Condition Typ Max
Symbol Parameter fHCLK Unit
Voltage
- 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
scaling
2 MHz 180 385 1000 1750 3300 1500 2500 5400 9000 15000
fHCLK = fHSE 1 MHz 135 335 950 1850 3450 1000 2100 5000 8700 15000
all peripherals disable 250 KHz 100 300 915 1800 3400 600 1700 4700 8200 15000
Supply current 62.5 KHz 92.5 295 905 1800 3400 590 1600 4100 7400 13000
IDD
in Low-power μA
(LPSleep) 2 MHz 600 795 1400 2300 3900 1300 2300 5300 8800 15000
sleep mode
fHCLK = fHSI / HPRE 1 MHz 585 785 1400 2300 3900 1300 2300 5300 8800 15000
all peripherals disable 250 KHz 575 775 1400 2250 3900 1300 2300 5300 8800 15000
62.5 KHz 575 770 1400 2250 3900 1300 2300 5300 8800 15000
DS13122 Rev 4
2 MHz 175 380 990 1750 3300 670 1700 4800 8500 15000
fHCLK = fHSE 1 MHz 130 330 945 1850 3450 620 1700 4700 8300 15000
all peripherals -
disable 250 KHz 95.5 295 905 1800 3400 590 1700 4500 8300 15000
Supply current 62.5 KHz 87.0 285 895 1800 3400 530 1400 3800 6900 12000
Electrical characteristics
IDD
in low-power μA
(LPSleep) 2 MHz 595 790 1400 2300 3900 1300 2300 5200 9000 15000
sleep mode
fHCLK = fHSI 1 MHz 580 775 1400 2300 3900 1300 2300 5200 9000 15000
all peripherals -
disable 250 KHz 570 765 1350 2250 3850 1300 2200 5200 8800 15000
62.5 KHz 570 765 1350 2250 3850 1000 1900 4300 7400 13000
87/197
Table 29. Current consumption in Stop 1 mode
88/197
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
1.8 V 64.5 250 800 1600 3000 440 1000 3400 6300 11000
Supply current 2.4 V 67.5 250 805 1600 3050 440 1000 3500 6400 11000
IDD
in Stop 1 mode, RTC disabled
(Stop 1) 3.0 V 68.0 250 805 1650 3100 440 1000 3500 6400 12000
RTC disabled
3.6 V 68.5 250 810 1650 3100 440 1200 3500 6400 12000
1.8 V 65.5 250 800 1600 3000 440 1000 3400 6300 11000
2.4 V 67.5 250 805 1600 3050 440 1000 3500 6400 11000
RTC clocked by LSI
3.0 V 68.5 250 805 1650 3100 440 1200 3500 6400 12000
3.6 V 69.0 250 815 1650 3100 450 1200 3500 6400 12000
µA
1.8 V 65.5 250 800 1600 3000 - - - - -
DS13122 Rev 4
IDD Supply current RTC clocked by LSE 2.4 V 67.5 250 805 1600 3050 - - - - -
(Stop 1 in Stop 1 mode, bypassed at 32768
with RTC) RTC enabled Hz 3.0 V 68.5 250 805 1650 3100 - - - - -
3.6 V 69.0 250 810 1650 3100 - - - - -
1.8 V 56.5 215 700 1450 - - - - - -
RTC clocked by LSE 2.4 V 57.0 215 705 1450 - - - - - -
quartz in low drive
mode at 32768 Hz 3.0 V 57.0 215 710 1450 - - - - - -
3.6 V 58.0 220 715 1450 - - - - - -
STM32G491xC STM32G491xE
Wakeup clock is HSI
3.0 V 1.70 - - - - - - - - -
Supply current = 16 MHz,
IDD
during wakeup Wakeup clock is
(Stop 1 mA
from HSI = 4 MHz,
with RTC) 3.0 V 1.25 - - - - - - - - -
Stop 1 mode (HPRE divider=4),
voltage Range 2
1. Guaranteed by characterization results, unless otherwise specified.
Table 30. Current consumption in Stop 0 mode
STM32G491xC STM32G491xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
1.8 V 170 365 955 1800 3350 570 1400 3800 6900 12000
Supply current 2.4 V 170 365 955 1800 3350 570 1400 3800 6900 12000
IDD(Stop 0) in Stop 0 mode, - µA
RTC disabled 3V 175 370 960 1850 3350 580 1400 3800 6900 12000
3.6 V 175 370 960 1850 3400 580 1400 3800 6900 12000
1. Guaranteed by characterization results, unless otherwise specified.
1.8 V 105 325 1650 4750 12500 190 500 2900 7800 21000
No independent 2.4 V 115 370 1900 5500 14500 210 570 3200 8800 23000
watchdog 3V 130 430 2250 6400 17000 230 670 3700 10000 26000
Supply current in Standby
IDD mode (backup registers 3.6 V 180 560 2700 7600 20000 330 890 4400 12000 30000
retained), nA
(Standby) 1.8 V 285 - - - - - - - - -
RTC disabled
With independent 2.4 V 335 - - - - - - - - -
watchdog 3V 395 - - - - - - - - -
3.6 V 495 - - - - - - - - -
Electrical characteristics
89/197
Table 31. Current consumption in Standby mode (continued)
90/197
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
1.8 V 435 660 2000 5050 12500 530 850 3200 8100 21000
RTC clocked by
LSI, no 2.4 V 545 810 2350 5900 15000 650 1200 3700 9200 24000
independent 3V 675 985 2750 6900 17500 800 1400 4200 11000 27000
watchdog
3.6 V 855 1250 3350 8250 20500 1100 1700 5100 13000 31000
nA
1.8 V 470 - - - - - - - - -
RTC clocked by
LSI, with 2.4 V 600 - - - - - - - - -
independent 3V 735 - - - - - - - - -
Supply current in Standby watchdog
IDD 3.6 V 935 - - - - - - - - -
mode (backup registers
(Standby with retained),
RTC) 1.8 V 320 540 1900 4950 12500 - - - - -
DS13122 Rev 4
RTC enabled
RTC clocked by 2.4 V 410 670 2250 5850 15000 - - - - -
LSE bypassed at
32768 Hz 3V 530 830 2650 6800 17500 - - - - -
3.6 V 695 1100 3200 8150 20500 - - - - -
nA
1.8 V 455 670 1950 4500 11500 - - - - -
RTC clocked by 2.4 V 565 810 2300 5250 13500 - - - - -
LSE quartz(2) in low
drive mode 3V 705 1000 2700 6100 15500 - - - - -
3.6 V 900 1250 3300 7250 18500 - - - - -
STM32G491xC STM32G491xE
1.8 V 340 1125 4250 9750 20500 - - - - -
Supply current to be added in 2.4 V 340 1130 4250 10000 21000 - - - - -
IDD
Standby mode when SRAM2 - nA
(SRAM2)(3) 3V 340 1120 4250 9600 21000 - - - - -
is retained
3.6 V 345 1140 4250 9900 21500 - - - - -
Table 31. Current consumption in Standby mode (continued)
STM32G491xC STM32G491xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
Supply current 1.8 V 26.0 160 1050 3350 9800 51.0 320 2200 6300 18000
in Shutdown
IDD 2.4 V 28.0 195 1200 3900 11500 66.0 370 2400 7000 20000
mode (backup
- nA
(Shutdown) registers 3V 42.0 230 1450 4550 13500 89.0 450 2800 8000 22000
retained) RTC
disabled 3.6 V 69.0 335 1850 5500 15500 170 630 3400 9500 26000
Electrical characteristics
91/197
Table 32. Current consumption in Shutdown mode (continued)
92/197
Electrical characteristics
Conditions Typ Max(1)
Symbol Parameter Unit
- VDD 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
STM32G491xC STM32G491xE
Table 33. Current consumption in VBAT mode
STM32G491xC STM32G491xE
Conditions Typ Max(1)
Symbol Parameter Unit
- VBAT 25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C
RTC
enabled and 2.4 V 460 500 720 890 2350 - - - - -
clocked by
LSE 3V 585 635 890 1000 2650 - - - - -
quartz(2) 3.6 V 735 800 1100 1200 3100 - - - - -
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
Electrical characteristics
93/197
Electrical characteristics STM32G491xC STM32G491xE
I SW = V DDIOx × f SW × C
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDD is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
Wake up time from Stop 0 Range 1 Wakeup clock HSI16 = 16 MHz 6.8 7
mode to Run mode in Flash Range 2 Wakeup clock HSI16 = 16 MHz 18.1 18.4
tWUSTOP0
Wake up time from Stop 0 Range 1 Wakeup clock HSI16 = 16 MHz 2.9 3.1
mode to Run mode in SRAM1 Range 2 Wakeup clock HSI16 = 16 MHz 2.9 3.1
Wake up time from Stop 1 Range 1 Wakeup clock HSI16 = 16 MHz 10.4 10.8
mode to Run in Flash Range 2 Wakeup clock HSI16 = 16 MHz 21.6 22
Wake up time from Stop 1 Range 1 Wakeup clock HSI16 = 16 MHz 6.6 6.9
mode to Run mode in SRAM1 Range 2 Wakeup clock HSI16 = 16 MHz 6.4 6.7
tWUSTOP1 Wake up time from Stop 1
mode to Low-power run Regulator in 31.4 37
mode in Flash Wakeup clock µs
low-power
HSI16 = 16 MHz,
Wake up time from Stop 1 mode (LPR=1 with HPRE = 8
mode to Low-power run in PWR_CR1)
15.5 19.2
mode in SRAM1
Wakeup time from Standby
tWUSTBY Range 1 Wakeup clock HSI16 = 16 MHz 24.4 29.6
mode to Run mode
tWUSTBY Wakeup time from Standby
Range 1 Wakeup clock HSI16 = 16 MHz 24.4 29.6
SRAM2 with SRAM2 to Run mode
Voltage scaling
- 8 48
User external clock Range 1
fHSE_ext MHz
source frequency Voltage scaling
- 8 26
Range 2
OSC_IN input pin high
VHSEH - 0.7 VDD - VDD
level voltage
V
OSC_IN input pin low
VHSEL - VSS - 0.3 VDD
level voltage
Voltage scaling
7 - -
tw(HSEH) Range 1
OSC_IN high or low time ns
tw(HSEL) Voltage scaling
18 - -
Range 2
1. Guaranteed by design - Not tested in production.
tw(HSEH)
VHSEH
90%
10%
VHSEL
tr(HSE) t
tf(HSE) tw(HSEL)
THSE
MS19214V2
tw(LSEH)
VLSEH
90%
10%
VLSEL
tr(LSE) t
tf(LSE) tw(LSEL)
TLSE
MS19215V2
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 21). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
OSC_IN fHSE
Bias
8 MHz controlled
resonator RF gain
MS19876V1
LSEDRV[1:0] = 00
- 250 -
Low drive capability
LSEDRV[1:0] = 01
- 315 -
Medium low drive capability
IDD(LSE) LSE current consumption nA
LSEDRV[1:0] = 10
- 500 -
Medium high drive capability
LSEDRV[1:0] = 11
- 630 -
High drive capability
LSEDRV[1:0] = 00
- - 0.5
Low drive capability
LSEDRV[1:0] = 01
- - 0.75
Maximum critical crystal Medium low drive capability
Gmcritmax µA/V
gm LSEDRV[1:0] = 10
- - 1.7
Medium high drive capability
LSEDRV[1:0] = 11
- - 2.7
High drive capability
tSU(LSE)(3) Startup time VDD is stabilized - 2 - s
1. Guaranteed by design - Not tested in production.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator
design guide for ST microcontrollers”.
3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized
32.768 kHz oscillation is reached. This value is measured for a standard crystal and it can vary significantly
with the crystal manufacturer
Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
OSC32_IN fLSE
OSC32_OUT
CL2
MS30253V2
Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
16.1
16
15.9
15.8 -1 %
-1.5 %
15.7
-2 %
15.6
-40 -20 0 20 40 60 80 100 120 °C
Mean min max
MSv39299V2
-2
-4
-6
-50 -30 -10 10 30 50 70 90 110 130
°C
Avg min max
MSv40989V1
VDD = 3.0 V,
31.04 - 32.96
TA = 30 °C
fLSI LSI Frequency kHz
VDD = 1.62 to 3.6 V,
29.5 - 34
TA = -40 to 125 °C
LSI oscillator start-up
tSU(LSI)(2) - - 80 130 μs
time
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Static latch-up
Two complementary static tests are required on three parts to assess the latch-up
performance:
• A supply over-voltage is applied to each power supply pin.
• A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78E IC latch-up standard.
Note: For more information about GPIO properties, refer to the application note AN4899 "STM32
GPIO configuration for hardware settings and low-power consumption" available from the
ST website www.st.com.
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 25 for standard I/Os, and 5 V tolerant
I/Os (except FT_c).
2
DIO
x
>1.6
0. 7xV D V DDIOx
in = 6 for
m +0.2
Vih xV DDIO
x
ent 0.49
quir
em 2 or
<1.6 >1.62
S re V DD IOx
r VDDIOx
MO .08< .06 fo
nC or 1 -0
ctio +0.05 f 9xVD DIOx
rodu IOx or 0.3
in p 0.6 1xV DD <1.62
ted min = VDDIOx
Tes 1.08<
n Vih -0.1 fo
r
ulatio VDDIOx
do n sim ax =0.43x TTL requirement Vil max = 0.8V
Base o n Vil m xVdd
imulati ax = 0.3
on s nt Vil m
Based requireme
n CMOS
in p roductio
Tested
MSv37613V1
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 5.2:
• The sum of the currents sourced by all the I/Os on VDD, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 14: Voltage characteristics).
• The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see
Table 14: Voltage characteristics).
VOL(3) Output low level voltage for an I/O pin CMOS port - 0.4
|IIO| = 2 mA for FT_c
VOH(3) Output high level voltage for an I/O pin I/Os = 8 mA for other I/Os VDD VDD-0.4 -
≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin TTL port - 0.4
|IIO| = 2 mA for FT_c
VOH(3) Output high level voltage for an I/O pin I/Os = 8 mA for other I/Os 2.4 -
VDD ≥ 2.7 V
VOL(3) Output low level voltage for an I/O pin All I/Os except FT_c - 1.3
|IIO| = 20 mA V
VOH(3) Output high level voltage for an I/O pin V ≥ 2.7 V VDD-1.3 -
DD
VOL(3) Output low level voltage for an I/O pin |IIO| = 1 mA for FT_c - 0.4
I/Os = 4 mA for other I/Os
VOH(3) Output high level voltage for an I/O pin V ≥ 1.62 V VDD-0.45 -
DD
|IIO| = 20 mA
Output low level voltage for an FT I/O - 0.4
VOLFM+ VDD ≥ 2.7 V
(3) pin in FM+ mode (FT I/O with “f”
option) |IIO| = 10 mA
- 0.4
VDD ≥ 1.62 V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 14:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design - Not tested in production.
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 26 and
Table 55, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 17: General
operating conditions.
Maximum
Fmax(5) - 1 MHz
frequency
FM+ Output high to C=50 pF, 1.6 V≤VDD≤3.6 V
(4)
Tr/TF low level fall - 5 ns
time
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the
SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-
based 32-bit MCUs" for a description of GPIO Port configuration register.
2. Guaranteed by design - Not tested in production.
3. This value represented the I/O capability but maximum system frequency is 170 MHz.
4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
5. The maximum frequency is defined with the following conditions:
- (Tr+ Tf) ≤ 2/3 T.
- 45%<Duty cycle<55%
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the
SYSCFG_CFGR1 register. Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-
based 32-bit MCUs" for a description of GPIO Port configuration register.
2. Guaranteed by design - Not tested in production.
50% 50%
10% 90%
t U ,2 RXW t I ,2 RXW
0D[LPXPIUHTXHQF\LVDFKLHYHGLI WW
r f 7DQGLIWKHGXW\F\FOHLV
ZKHQORDGHGE\WKHVSHFLILHGFDSDFLWDQFH
MS32132V2
External
reset circuit(1) VDD
RPU
NRST(2) Internal reset
Filter
0.1 μF(3)
MS19878V3
Analog supply
VDDA - 1.62 - 3.6 V
voltage
Positive VDDA ≥ 2 V 2 - VDDA V
VREF+ reference
voltage VDDA < 2 V VDDA V
Negative
VREF- reference - VSSA V
voltage
Input common (VREF++VREF- (VREF+ + (VREF+ + VREF-
VCMIN Differential V
mode )/2 - 0.18 VREF-)/2 )/2 + 0.18
Range 1, single
0.14 - 60
ADC operation
Range 2 - - 26
Range 1, all ADCs
operation, single
0.14 - 52
ended mode
VDDA ≥ 2.7 V
ADC clock
fADC MHz
frequency Range 1, all ADCs
operation, single
0.14 - 42
ended mode
VDDA ≥ 1.62 V
Range 1, all ADCs
operation,
0.14 - 56
differential mode
VDDA ≥ 1.62 V
For given
fADC / (sampling time
Sampling rate, resolution and
fs 0.001 [cycles] + resolution [bits] + Msps
continuous mode sampling time
0.5)
cycles (ts)
Considering trigger
conversion latency
- -
time (tLATR or
External trigger tLATRINJ)
TTRIG 1ms -
period
Resolution =
tconv + [tLATR
12 bits, -
or tLATRINJ]
fADC=60 MHz
Conversion
VAIN (3) - 0 - VREF+ V
voltage range
External input
RAIN(4) - - - 50 kΩ
impedance
Internal sample
CADC and hold - - 5 - pF
capacitor
conversion
tSTAB Power-up time - 1
cycle
fADC = 60 MHz 1.93 µs
tCAL Calibration time
- 116 1/fADC
Trigger CKMODE = 00 1.5 2 2.5
conversion
CKMODE = 01 - - 2.0
latency Regular
tLATR 1/fADC
and injected CKMODE = 10 - - 2.25
channels without
conversion abort CKMODE = 11 - - 2.125
2. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disabled when VDDA ≥ 2.4 V.
3. VREF+ can be internally connected to VDDA, depending on the package. Refer to Section 4: Pinouts and pin description for
further details.
4. The maximum value of RAIN can be found in Table 61: Maximum ADC RAIN.
The maximum value of RAIN can be found in Table 61: Maximum ADC RAIN.
Single ADC operation ADC clock Single Fast channel (max speed) - -73 -72
frequency ≤ 60 MHz, ended Slow channel (max speed) - -73 -72
VDDA = VREF+ = 3 V, TA =
Total
25 °C Fast channel (max speed) - -73 -72
THD harmonic dB
Continuous mode, sampling
distortion
rate: Differential
Fast channels@4Msps Slow channel (max speed) - -73 -72
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.
Single ADC operation Single Fast channel (max speed) - -73 -65
ADC clock frequency ended Slow channel (max speed) - -73 -67
Total ≤ 60 MHz, 2 V ≤ VDDA
THD harmonic Continuous mode, sampling Fast channel (max speed) - -73 -70 dB
distortion rate:
Differential
Fast channels@4Msps Slow channel (max speed) - -73 -71
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.
Single ADC operation Single Fast channel (max speed) - -73 -67
ADC clock frequency ≤ ended Slow channel (max speed) - -73 -67
60 MHz,
Total 1.62 V ≤ VDDA = VREF+ Fast channel (max speed) - -73 -71
THD harmonic ≤ 3.6 V, dB
distortion Continuous mode,
Differential
sampling rate: Slow channel (max speed) - -73 -71
Fast channels@4Msps
Slow channels@2Msps
1. Evaluated by characterization – Not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided
as this significantly reduces the accuracy of the conversion being performed on another analog input. It is
recommended to add a Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enabled when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disabled when VDDA ≥ 2.4 V. No oversampling.
Table 65. ADC accuracy (Multiple ADCs operation) - limited test conditions 1(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit
Table 66. ADC accuracy (Multiple ADCs operation) - limited test conditions 2(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit
Table 67. ADC accuracy (Multiple ADCs operation) - limited test conditions 3(1)(2)(3)
Symbol Parameter Conditions(4) Min Typ Max Unit
VREF+ VDDA
[1LSB = (or )]
Output code 2n 2n
EG
(1) Example of an actual transfer curve
2n-1 (2) Ideal transfer curve
2n-2 (3) End-point correlation line
2n-3 (2)
n = ADC resolution
ET = total unadjusted error: maximum deviation
(3) between the actual and ideal transfer curves
ET
7 (1) EO = offset error: maximum deviation between the first
actual transition and the first ideal one
6
EL EG = gain error: deviation between the last ideal
5 EO
transition and the last actual one
4 ED = differential linearity error: maximum deviation
ED between actual steps and the ideal one
3
2 EL = integral linearity error: maximum deviation between
1 any actual transition and the end point correlation line
1 LSB ideal
0 VREF+ (VDDA)
(1/2n)*VREF+
(2/2n)*VREF+
(3/2n)*VREF+
(4/2n)*VREF+
(5/2n)*VREF+
(6/2n)*VREF+
(7/2n)*VREF+
(2n-3/2n)*VREF+
(2n-2/2n)*VREF+
(2n-1/2n)*VREF+
(2n/2n)*VREF+
VSSA
MSv19880V6
Figure 29. Typical connection diagram when using the ADC with FT/TT pins
featuring analog switch function
VDDA(4) VREF+(4)
MSv67871V3
1. Refer to Table 60: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 53: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value downgrades conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 53: I/O static characteristics for the values of Ilkg.
4. Refer to Figure 16: Power supply scheme.
Wakeup time from off state Normal mode DAC output buffer ON
- 4.2 7.5
(setting the ENx bit in the CL ≤ 50 pF, RL ≥ 5 kΩ
tWAKEUP(2) µs
DAC Control register) until Normal mode DAC output buffer
final value ±1 LSB - 2 5
OFF, CL ≤ 10 pF
Normal mode DAC output buffer ON
PSRR VDDA supply rejection ratio - -80 -28 dB
CL ≤ 50 pF, RL = 5 kΩ, DC
No load, middle
- 185 240
DAC output code (0x800)
buffer ON No load, worst code
- 340 400
(0xF1C)
DAC output No load, middle
- 155 205
buffer OFF code (0x800)
DAC consumption from
IDDV(DAC) 185 ₓ 400 ₓ µA
VREF+
Sample and hold mode, buffer ON, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)
155 ₓ 205 ₓ
Sample and hold mode, buffer OFF, Ton/(Ton Ton/(Ton
-
CSH = 100 nF, worst case +Toff) +Toff)
(4) (4)
Buffered/non-buffered DAC
(1)
Buffer
RLOAD
12-bit
DACx_OUT
digital to
analog
converter
CLOAD
ai17157d
1. The DAC integrates an output buffer to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx
bit in the DAC_CR register.
Voltage on DAC_OUT
VDAC_OUT - 0 - VREF+ V
output
10%-90% - 16 22
5%-95% - 21 29
VDDA>2,7V
With One comparator 1%-99% - 33 46
Settling time (full scale: for on DAC output
32lsb - 40 53
a 12-bit code transition
between the lowest and the 1lsb - 64 87
tSETTLING ns
highest input codes when 10%-90% - 24 32
DAC_OUT reaches final
value) VDDA>2,7V 5%-95% - 32 43
With One comparator 1%-99% - 49 67
and OPAMP on DAC
output 32lsb - 57 75
1lsb - 93 125
10%-90% - 16 88
5%-95% - 21 116
VDDA<2,7V
With One comparator 1%-99% - 33 181
Settling time (full scale: for on DAC output
32lsb - 40 196
a 12-bit code transition
between the lowest and the 1lsb - 64 332
tSETTLING ns
highest input codes when 10%-90% - 24 128
DAC_OUT reaches final
value) VDDA<2,7V 5%-95% - 32 170
With One comparator 1%-99% - 49 265
and OPAMP on DAC
output 32lsb - 57 284
1lsb - 93 483
Wakeup time from off state
(setting the ENx bit in the
tWAKEUP(2) Normal mode CL ≤ 10 pF - 1.4 3.5 µs
DAC Control register) until
final value ±1 LSB
VDD > 2.7 V 65 85 -
PSRR VDDA supply rejection ratio dB
VDD <2.7 V 40 85 -
Sampling time in sample
and hold mode (code
transition between the
tSAMP lowest input code and the - - 0.7 - µs
highest input code when
DACOUT reaches final
value ±1LSB)
Internal sample and hold
CIint - - 4 5 pF
capacitor
Voltage decay rate in
dV/dt (hold CSH = 4 pF
Sample and hold mode, - 50 - mV/ms
phase) T = 55°C
during hold phase
DAC consumption from
IDDA(DAC) No load, middle code (0x800) - - 0.2
VDDA
µA
DAC consumption from
IDDV(DAC) No load, middle code (0x800)(3) - 720 955
VREF+
1. Guaranteed by design - Not tested in production.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
3. Worst case consumption is at code 0x800.
Power supply DC 40 55 -
PSRR dB
rejection 100 kHz 25 40 -
CL = 0.5 µF(5) - 300 350
tSTART Start-up time CL = 1.1 µF(5) - 500 650 µs
CL = 1.5 µF(5) - 650 800
Control of
maximum DC
current drive on
IINRUSH - - 8 - mA
VREFBUF_
OUT during start-
up phase (6)
Iload = 0 µA - 16 25
VREFBUF Iload = 500 µA - 18 30
IDDA(VREF
consumption from µA
BUF) Iload = 4 mA - 35 50
VDDA
Iload = 6.5 mA - 45 80
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which follows (VDDA - drop
voltage).
3. Line regulation is given for overall supply variation, in normal mode.
4. Tcoeff_vrefint refer to Tcoeff parameter in the embedded voltage reference section.
5. The capacitive load must include a 100 nF low ESR capacitor in order to cut-off the high frequency noise.
6. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V], [2.8 V to 3.6 V] and [3.135 V to 3.6 V] respectively for VRS=0,1 and 2.
2.06
2.055
2.05
2.045
2.04
2.035
2.03
2.025
-40 -20 0 20 40 60 80 100 120 °C
MSv62522V1
2.51
2.505
2.5
2.495
2.49
2.485
2.48
2.475
-40 -20 0 20 40 60 80 100 120 °C
MSv62523V1
2.91
2.905
2.9
2.895
2.89
2.885
2.88
2.875
2.87
-40 -20 0 20 40 60 80 100 120 °C
MSv62524V1
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ
Normal mode - 3 6
follower
configuration
Wake up time from
tWAKEUP CLOAD ≤ 50 pf, µs
OFF state.
RLOAD ≥
High-speed mode 20 kΩ - 3 6
follower
configuration
OPAMP input bias
Ibias See lleak parameter in Table 53: I/O static characteristics for given pin.
current
PGA Gain = 2 0.1 ≤ Out VDDA < 2.2 -2 - 2
dynamic range ≤ VDDA -
0.1 VDDA ≥ 2.2 -1 - 1
MSv62525V1
Battery VBRS = 0 - 5 -
RBC charging kΩ
VBRS = 1 - 1.5 -
resistor
- 1 - tTIMxCLK
tres(TIM) Timer resolution time
fTIMxCLK = 170 MHz 5.88 - ns
Timer external clock - 0 fTIMxCLK/2 MHz
fEXT frequency on CH1 to
CH4 fTIMxCLK = 170 MHz 0 85 MHz
/4 0 0.125 512
/8 1 0.250 1024
/16 2 0.500 2048
/32 3 1.0 4096 ms
/64 4 2.0 8192
/128 5 4.0 16384
/256 6 or 7 8.0 32768
1. Guaranteed by design - Not tested in production.
2. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there
is always a full RC period of uncertainty.
1 0 0.0241 1.542
2 1 0.0482 3.084
ms
4 2 0.0964 6.168
8 3 0.1928 12.336
1. Guaranteed by design - Not tested in production.
Standard mode 2
Analog Filtre ON
8
DNF=0
Fast-mode
Analog Filtre OFF
I2CCLK 9
f(I2CCLK) DNF=1 MHz
frequency
Analog Filtre ON
17
Fast-mode DNF=0
Plus Analog Filtre OFF
16
DNF=1
The SDA and SCL I/O requirements are met with the following restrictions:
• The SDA and SCL I/O pins are not “true” open-drain. When configured as open-drain,
the PMOS connected between the I/O pin and VDDIOx is disabled, but is still present.
• The 20mA output drive requirement in Fast-mode Plus is supported partially. This limits
the maximum load Cload supported in Fm+, which is given by these formulas:
– tr(SDA/SCL)=0.8473 x Rp x Cload
– Rp(min)= (VDD - VOL(max)) / IOL(max)
Where Rp is the I2C lines pull-up. Refer to Section 5.3.14: I/O port characteristics for the
I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to Table 82 below for the analog
filter characteristics:
SPI characteristics
Unless otherwise specified, the parameters given in Table 83 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 17: General operating conditions.
• Output speed is set to OSPEEDRy[1:0] = 11
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).
Master mode
2.7 V < VDD < 3.6 V 75
Voltage Range V1
Master mode
1.71 V < VDD < 3.6 V 50
Voltage Range V1
Master transmitter mode
1.71 V < VDD < 3.6 V 50
Voltage Range V1
Slave receiver mode
fSCK
SPI clock frequency 1.71 V < VDD < 3.6 V - - 50 MHz
1/tc(SCK)
Voltage Range V1
Slave mode transmitter/full duplex
2.7 V < VDD < 3.6 V 41
Voltage Range V1
Slave mode transmitter/full duplex
1.71 V < VDD < 3.6 V 27
Voltage Range V1
Slave mode
2.7 V < VDD < 3.6 V - 9 12
Voltage Range V1
Slave mode
tv(SO) 1.71 V < VDD < 3.6 V - 9 18
Data output valid time Voltage Range V1
Slave mode
ns
1.71 V < VDD < 3.6 V - 13 22
Voltage Range V2
tv(MO) Master mode - 3.5 4.5
Slave mode 1.71 V < VDD < 3.6 V 6 - -
th(SO)
Data output hold time Slave mode Range V2 9 - -
th(MO) Master mode 2 - -
1. Guaranteed by characterization results.
2. The maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into
SCK low or high-phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a
master having tsu(MI) = 0 while Duty(SCK) = 50%.
NSS input
tc(SCK) th(NSS)
CPOL=0
CPHA=0
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tf(SCK) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
th(SI)
tsu(SI)
MSv41658V1
NSS input
tc(SCK)
CPOL=0
CPHA=1
CPOL=1
ta(SO) tw(SCKL) tv(SO) th(SO) tr(SCK) tdis(SO)
MISO output First bit OUT Next bits OUT Last bit OUT
tsu(SI) th(SI)
MSv41659V1
1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.
High
NSS input
tc(SCK)
SCK Output
CPHA=0
CPOL=0
CPHA=0
CPOL=1
SCK Output
CPHA=1
CPOL=0
CPHA=1
CPOL=1
tw(SCKH) tr(SCK)
tsu(MI) tw(SCKL) tf(SCK)
MISO
INPUT MSB IN BIT6 IN LSB IN
th(MI)
MOSI
OUTPUT MSB OUT BIT1 OUT LSB OUT
tv(MO) th(MO)
ai14136c
1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.
I2S characteristics
Unless otherwise specified, the parameters given in Table 84 for I2S are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 17: General operating conditions, with the following
configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C=30pF
• Measurement points are done at CMOS levels: 0.5 VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CK,SD,WS).
Note: Refer to the reference manual RM0440 "STM32G4 Series advanced Arm®-based 32-bit
MCUs” I2S section for more details about the sampling frequency (Fs), fMCK, fCK, DCK
values reflect only the digital peripheral behavior, source clock precision might slightly
change the values DCK depends mainly on ODD bit value. Digital contribution leads to a min
of (I2SDIV/(2*I2SDIV+ODD) and a max (I2SDIV+ODD)/(2*I2SDIV+ODD) and Fs max
supported for each mode/condition.
SAI characteristics
Unless otherwise specified, the parameters given in Table 85 for SAI are derived from tests
performed under the ambient temperature, fPCLKx frequency and VDD supply voltage condi-
tions summarized inTable 17: General operating conditions, with the following configuration:
• Output speed is set to OSPEEDRy[1:0] = 10
• Capacitive load C = 30 pF
• Measurement points are done at CMOS levels: 0.5 x VDD
Refer to Section 5.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CK,SD,FS).
SAI_SCK_X
th(FS)
SAI_FS_X
(output) tv(FS) tv(SD_MT) th(SD_MT)
SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_MR) th(SD_MR)
SAI_SD_X Slot n
(receive)
MS32771V1
1/fSCK
SAI_SCK_X
tw(CKH_X) tw(CKL_X) th(FS)
SAI_FS_X
(input) tsu(FS) tv(SD_ST) th(SD_ST)
SAI_SD_X
Slot n Slot n+2
(transmit)
tsu(SD_SR) th(SD_SR)
SAI_SD_X Slot n
(receive)
MS32772V1
USB characteristics
The device USB interface is fully compliant with the USB specification version 2.0 and is
USB-IF certified (for Full-speed device operation).
Master mode - - 21
fCK USART clock frequency MHz
Slave mode - - 22
tsu(NSS) NSS setup time Slave mode tker + 2 - -
ns
th(NSS) NSS hold time Slave mode 2 - -
tw(CKH)
CK high and low time Master mode 1/fck/2-1 1/fck/2 1/fck/2+1 ns
tw(CKL)
Master mode tker + 2 - -
tsu(RX) Data input setup time
Slave mode 2 - -
ns
Master mode 1 - -
th(RX) Data input hold time
Slave mode 0.5 - -
Clock
tv(OUT) th(OUT)
Data output D0 D1 D2
ts(IN) th(IN)
Data input D0 D1 D2
MSv36878V1
Clock
tvf(OUT) thr(OUT) tvr(OUT) thf(OUT)
6 Package information
BOTTOM VIEW
bbb M C A B DETAIL C
ddd M C
2xR
DETAIL C b
L
1
e
32
Terminal 1
indicator
e
A3
ccc c
A
Seating plane
eee c
C
SECTION A - A
D A
B
E
SECTION A - A Terminal A1 A1
Index area Seating plane
C
A A
aaa c
X4
5.30
3.80
0.60
5.30 3.80
0.50
0.30
0.75
3.80
A09E_FP_V1
E2 E1
e
PIN 1 idenfier
L
D2
BOTTOM VIEW
A
A3
A1
SEATING PLANE
C
DETAIL A
ddd C
LEADS COPLANARITY
FRONT VIEW
A1 A
SEATING PLANE
ddd C
PIN 1 IDENTIFIER C
LASER MAKER AREA
TOP VIEW
A0B9_UFQFPN48_ME_V4
6.20
48 37
1 36
0.20 5.60
7.30
5.80
6.20
5.60
0.30
12 25
13 24
0.50 0.75
0.55
5.80 A0B9_UFQFPN48_FP_V3
4x N/4 TIPS
aaa C A-B D
2 1
(2)
R1
H
R2
B
B-
D 1/4
N
O
(6)
TI
C
SE
B GAUGE PLANE
E 1/4
0.25
S
B
bbb H A-B D 4x
L
3
(13) (L1)
0.05 (N – 4)x e (1) (11)
A A2 C SECTION A-A
(12) ccc C
A1 ddd C A-B D
b
D (4)
(2) (5)
D1
(10) D (3) (9) (11)
N b WITH PLATING
1
2 E 1/4
(3) A 3
(6) B (3)
D 1/4 c c1
E1 E (11) (11)
(2) (4)
(5)
A A b1 BASE METAL
(Section A-A) (11)
SECTION B-B
TOP VIEW
5B_LQFP48_ME_V1
A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0079 0.0090
(11)
c 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 9.00 BSC 0.3543 BSC
(2)(5)
D1 7.00 BSC 0.2756 BSC
E(4) 9.00 BSC 0.3543 BSC
E1(2)(5) 7.00 BSC 0.2756 BSC
e 0.50 BSC 0.1970 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 48
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
36 25
37 24 0.30
0.20
9.70 7.30
48 13
1 12
5.80
9.70
5B_LQFP48_FP_V1
B8 B7 B6 B5 B4 B3 B2 B1
C8 C7 C6 C5 C4 C3 C2 C1
DETAIL A
D8 D7 D6 D5 D4 D3 D2 D1
e2
E8 E7 E6 E5 E4 E3 E2 E1
E
F8 F7 F6 F5 F4 F3 F2 F1
G8 G7 G6 G5 G4 G3 G2 G1
e
H8 H7 H6 H5 H4 H3 H2 H1
e
A
D
A2 D
A2
A3
b BUMP
FRONT VIEW
eee Z A1
b (64x) Z
ccc Z X Y SEATING PLANE
ddd Z
DETAIL A
ROTATED 90
B0D3_WLCSP64_ME_V1
Dpad
Dsm
BGA_WLCSP_FT_V1
Pitch 0.4 mm
Dpad 0,225 mm
Dsm 0.290 mm typ. (depends on soldermask registration tolerance)
Stencil opening 0.250 mm
Stencil thickness 0.100 mm
Ball 1
Product
identification
(1)
G491RE6 identification
Date code
Revision code
Y WW R
MSv66504V1
2 1
(2)
R1
H
R2
B
B-
N
O
TI
C
SE
B GAUGE PLANE
D 1/4
0.25
(6)
S
B
L
4x N/4 TIPS
E 1/4 3
(L1)
aaa C A-B D (1) (11)
bbb H A-B D 4x
SECTION A-A
(13) (N – 4)x e
C
A
0.05
A2 A1 (12)
b
ddd C A-B D ccc C
D (4)
(10)
D (3) b WITH PLATING
N (4)
A A SECTION B-B
(Section A-A)
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
48 33
0.30
49 0.5 32
12.70
10.30
10.30
64 17
1.20
1 16
7.80
12.70
5W_LQFP64_FP_V2
BOTTOM VIEW
2 1
(2)
R1
R2
B
H
B-
N
O
TI
C
SE
B GAUGE PLANE
0.25
S
D 1/4 (6) B
L
3
(L1) (1) (11)
E 1/4
4x N/4 TIPS SECTION A-A
aaa C A-B D bbb H A-B D 4x
(N – 4)x e (13)
C
A
(9) (11)
0.05 A2 A1(12) b ddd C A-B D ccc C b WITH
PLATING
D (4)
(2) (5) D1
D (3) (11) (11)
(10)
N c c1
(4)
1
2
3
E 1/4 b1 BASE METAL
(11)
(3)
(3) A (6) B SECTION B-B
D 1/4
E1 E
(2)
(5)
A A
(Section A-A)
TOP VIEW
9X_LQFP80_ME_V2
A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
(9)(11)
b 0.17 0.22 0.27 0.0067 0.0087 0.0106
(11)
b1 0.17 0.20 0.23 0.0067 0.0078 0.0090
(11)
c 0.09 - 0.20 0.0038 - 0.0067
c1(11) 0.09 - 0.16 0.0038 - 0.0063
D 14.00 BSC 0.5512 BSC
D1 12.00 BSC 0.4724 BSC
E 14.00 BSC 0.5512 BSC
E1 12.00 BSC 0.4724 BSC
e 0.50 BSC 0.0197 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 80
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
0.5
1.25
0.3
14.70
12.30
1.2
9.80
14.70
9X_LQFP80_FP
2 1
(2)
R1
R2
B
H
B-
N
O
TI
C
SE
B GAUGE PLANE
(6)
0.25
D 1/4
S
B
L
3
E 1/4 (L1) (1) (11)
(N – 4)x e (13)
C
A
A2
A1(12) b ddd C A-B D ccc C
0.05
D (4)
(2) (5) D1 (9) (11)
b WITH
(10) D (3) PLATING
N
(4)
1
2 (11) (11)
3
E 1/4 c c1
(6) (3)
(3) A D 1/4 B
b1 BASE METAL
(11)
E1 E SECTION B-B
(2)
(5)
A A
(Section A-A)
1S_LQFP80_ME_V2
TOP VIEW
A - - 1.60 - - 0.0630
(12)
A1 0.05 - 0.15 0.0020 - 0.0059
A2 1.35 1.40 1.45 0.0531 0.0551 0.0571
b(9)(11) 0.22 0.32 0.38 0.0087 0.0126 0.0150
(11)
b1 0.22 0.30 0.33 0.0087 0.0118 0.0130
c(11) 0.09 - 0.20 0.0035 - 0.0079
c1(11) 0.09 - 0.16 0.0035 - 0.0063
(4)
D 16.00 BSC 0.6299 BSC
D1(2)(5) 14.00 BSC 0.5512 BSC
(4)
E 16.00 BSC 0.6299 BSC
E1(2)(5) 14.00 BSC 0.5512 BSC
e 0.65 BSC 0.0256 BSC
L 0.45 0.60 0.75 0.0177 0.0236 0.0295
L1 1.00 REF 0.0394 REF
N(13) 80
θ 0° 3.5° 7° 0° 3.5° 7°
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
60 41
0.4
61 40
0.65
16.7
14.3
80 21
20
1.2
1
12.75
16.7 1S_LQFP80_FP_V1
ș2 ș
(2)
R1
H
R2
B
B-
N
O
(6)
TI
C
SE
D1/4 B GAUGE PLANE
S
E1/4
B ș
4x N/4 TIPS
ș L
4x (L1)
aaa C A-B D
bbb H A-B D (1) (11)
(N-4) x e (13)
C
A (9) (11)
0.05
ccc C b WITH PLATING
A2 A1 b aaa C A-BD
(12)
SIDE VIEW
D (4)
(11) c
(2) (5) D1 c1 (11)
D (3)
(10) (4)
N
b1 BASE METAL
1 (11)
2
3 E1/4 SECTION B-B
E1 E
SECTION A-A
A A
θ1 0° - - 0° - -
Notes:
1. Dimensioning and tolerancing schemes conform to ASME Y14.5M-1994.
2. The Top package body size may be smaller than the bottom package size by as much
as 0.15 mm.
3. Datums A-B and D to be determined at datum plane H.
4. To be determined at seating datum plane C.
5. Dimensions D1 and E1 do not include mold flash or protrusions. Allowable mold flash
or protrusions is “0.25 mm” per side. D1 and E1 are Maximum plastic body size
dimensions including mold mismatch.
6. Details of pin 1 identifier are optional but must be located within the zone indicated.
7. All Dimensions are in millimeters.
8. No intrusion allowed inwards the leads.
9. Dimension “b” does not include dambar protrusion. Allowable dambar protrusion shall
not cause the lead width to exceed the maximum “b” dimension by more than 0.08 mm.
Dambar cannot be located on the lower radius or the foot. Minimum space between
protrusion and an adjacent lead is 0.07 mm for 0.4 mm and 0.5 mm pitch packages.
10. Exact shape of each corner is optional.
11. These dimensions apply to the flat section of the lead between 0.10 mm and 0.25 mm
from the lead tip.
12. A1 is defined as the distance from the seating plane to the lowest point on the package
body.
13. “N” is the number of terminal positions for the specified body size.
14. Values in inches are converted from mm and rounded to 4 decimal digits.
15. Drawing is not to scale.
76 50
0.5
0.3
16.7 14.3
100 26
1.2
1 25
12.3
16.7
1L_LQFP100_FP_V1
7 Ordering information
Device family
STM32 = Arm-based 32-bit microcontroller
Product type
G = General-purpose
Sub-family
491 = STM32G491xC/xE
Pin count
K = 32 pins
C = 48 pins
R = 64 pins
M = 80 pins
V = 100 pins
Code size
C = 256 Kbytes
E = 512 Kbytes
Package
I = UFBGA
T = LQFP (pitch 0.5 mm)
S = LQFP (pitch 0.65 mm)
U = UFQFPN
Y = WLCSP
Temperature range
6 = Industrial temperature range, - 40 to 85 °C (105 °C junction)
3 = Industrial temperature range, - 40 to 125 °C (130 °C junction)
Options
xxx = programmed parts
TR = tape and reel
For a list of available options (memory, package, and so on) or for further information on any
aspect of this device, contact the nearest ST sales office.
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which is why the ST product(s) identified in this documentation may be certified by various
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9 Revision history
Updated:
– Features
– Section 2: Description
– Section 3.11.1: Power supply schemes
– Table 13: Alternate function
– Table 100: Package thermal characteristics
– Section 6.2: UFQFPN32 package information (A09E)
– Section 6.3: UFQFPN48 package information (A0B9)
– Section 6.4: LQFP48 package information (5B)
22-Apr-2024 4 – Section 6.5: WLCSP64 package information (B0D3)
– Section 6.6: LQFP64 package information (5W)
– Section 6.7: LQFP80 package information (9X)
– Section 6.8: LQFP80 package information (1S)
– Section 6.9: LQFP100 package information (1L)
Added:
– Figure 3: Power-up/down sequence
– Section 6.1: Device marking
– Section 8: Important security notice
Deleted all device marking example except the one of WLCSP64.
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