Electronics

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VR

12 KL

30 Mw VZ = |0 V

find VL, VR, Tz and P

(a) RL = 12 k
(b)
Base
Tnwistoynpn
VCE bcoll
echoyFe
VEmitte
’ (atgn)
(BIT)
Coll
VeE
Baseto ccto

Tramsistors
Unit-2
VB- VE tD
eitey
vologe
eitt er FrewsistoyPne
collectey
Tet
CMOSFET)
Metol-oxicle-
EHeet
Ficld
voltoge

Tsauistey
R
PMOS Sei
NMOS
oudutey

Note
C’ Smmtter Tausisto
nþn
’Heuily
tlydoped E

est
Jnetou
(E8S)
Emittes
Base
do ngpeSi Vee ) ceo
Coll
inped
ws om =
B Ve
d
llest
sizein -
o P-te
ve
rca
Buse
ecoy
coll

ColleetoY

n
#
EBTOpeaton
Reverse Revese
fonwasd oanofor
EBT
Entte et
-Etuseo Revese
fowand
Bias Blas
VeE nþn fosat
ReveySe Revesse
RBAdeplition tauststor
rccrtoinede
Pdype

ReIERSE
ACTIVE CUT-OfF plifier Steute
LAwoeratio o
otetee
SATVRA
TIONAcTIVE
jn
Vee etoycol os
eC
P ACTIVE

dep MODE Diaitd


Le
4ion

#
cellectd fzou an
CBTsR8 )
LE cowlieoill e
efehing
acdiein a towtnsistoy
eopesate
sebon.ope ue The
colle hangecies
majoity e
Carreut bese to
heeon holes
48-99 cDx EBI
ue
emitfex
siele waue
n-tybe o is
eguahonof
Tne
,Ipe FB
o to amd
eellecley emitex
egian he CB3is
omelRB
electic jwc4ioni-e.
emone he ppll
-Ve
nn ed
EPcO
to
n-te
ector
Coll
rqion: ends
cosiae
holes o p- F8
pottatiad
Ineausisto.
typebase
wheYcos
(Ine vo
et LtogaVee
co
- lbeing.
T c*its e
ne)
Choles) imo bluo
(i) -Hence

InE At

becoz o4
-I
TE=
nainori Tis ne total toBE
Tis InE IE
md
holes ’
Tis
emitte Bese B
CcollecteeY
leskon te
detoho
componet
4he
cussetis
conpowet o moueet
holesoh

oueeut ejioh to
recowbination o dee to
he
Cowpoueuts
toB
o
holes

H
IB=
Te
=
TE
TPE
-
+
(Tnc-
(Ing

Tco) -Inc)-

soduseo
Rense Ls
Tnco

PcO

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