DoubleSideCooledModule

FF450R08A03P2

FinalDataSheet
V3.0,2020-05-11

AutomotiveHighPower
 FF450R08A03P2
DoubleSideCooledModule

1Features/Description

VCES = 750 V
IC = 450 A

TypicalApplications Description
• AutomotiveApplications The HybridPACKTM DSC S2 is a very compact
• HybridElectricalVehicles(H)EV half-bridge module targeting hybrid and electric
vehicles.
• Optimized for automotive applications with DC link
The module is based on Infineon’s long-term
voltages up to 450 V and gate driver voltage level
experience developing IGBT power modules and
of-8V/+15V
implements the EDT2 IGBT generation, which is an
automotive Micro-Pattern Trench-Field-Stop cell
ElectricalFeatures design optimized for electric drive train applications.
The chipset has benchmark current density
• IntegratedCurrentSensor combined with short circuit ruggedness and
• IntegratedTemperatureSensor increased blocking voltage for reliable inverter
• LowInductiveDesign operation under harsh environmental conditions.
• Blockingvoltage750V The EDT2 IGBTs also show excellent light load
power losses, which helps to improve System
• LowSwitchingLosses efficiency over a real driving cycle. The EDT2 IGBT
• Short-time extended Operation Temperature was optimized for applications with switching
Tvjop=175°C frequencies in the range of 10 kHz. Additionally,
on-die integrated current sensor and temperature
sensor allow precise monitoring of IGBT state.
MechanicalFeatures These features enable enhanced protection and
• 2.5kVAC1minInsulation intelligent control of the system.
• Doublesidedcooling
The innovative and small package is designed for
• Compactdesign
Double Sided Cooling (DSC) with superior thermal
• RoHScompliant performance. The low stray inductance and
increased blocking voltage support the design of
systems with a very high efficiency. Furthermore,
new material combinations and assembly
technologies enable best thermal and electrical
performance at highest reliability and mechanical
robustness.

ProductName OrderingCode
FF450R08A03P2 SP001630036

Final Data Sheet 2 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

2IGBT,Inverter
2.1MaximumRatedValues
Parameter Conditions Symbol Value Unit
Collector-emittervoltage Tvj = 25°C VCES 750 V
Implementedcollectorcurrent ICN 450 A
ContinuousDCcollectorcurrent TC = 120°C, Tvj max = 175°C IC nom 300 A
Repetitivepeakcollectorcurrent tP = 1 ms ICRM 900 A
Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 1667 W
Gate-emitterpeakvoltage VGES +/-20 V

2.2CharacteristicValues min. typ. max.

Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V Tvj = 25°C 1.20 1.44
IC = 300 A, VGE = 15 V Tvj = 150°C VCE sat 1.27 V
IC = 300 A, VGE = 15 V Tvj = 175°C 1.29
Gatethresholdvoltage IC = 4.85 mA, VCE = VGE Tvj = 25°C VGEth 4.90 5.80 6.50 V
Gatecharge VGE = -8 V ... 15 V, VCE = 400V QG 2.15 µC
Internalgateresistor Tvj = 25°C RGint 2.0 Ω
Inputcapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Tvj = 25°C Cies 38.5 nF
Reversetransfercapacitance f = 1 MHz, VCE = 25 V, VGE = 0 V Tvj = 25°C Cres 0.18 nF
Collector-emittercut-offcurrent VCE = 450 V, VGE = 0 V Tvj = 25°C ICES 0.1 mA
Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V Tvj = 25°C IGES 400 nA
Turn-ondelaytime,inductiveload IC = 300 A, VCE = 400 V Tvj = 25°C 0.34
VGE = -8/+15 V Tvj = 150°C td on 0.36 µs
RGon = 3.6 Ω Tvj = 175°C 0.36
Risetime,inductiveload IC = 300 A, VCE = 400 V Tvj = 25°C 0.06
VGE = -8/+15 V Tvj = 150°C tr 0.07 µs
RGon = 3.6 Ω Tvj = 175°C 0.07
Turn-offdelaytime,inductiveload IC = 300 A, VCE = 400 V Tvj = 25°C 0.48
VGE = -8/+15 V Tvj = 150°C td off 0.54 µs
RGoff = 2.4 Ω Tvj = 175°C 0.56
Falltime,inductiveload IC = 300 A, VCE = 400 V Tvj = 25°C 0.07
VGE = -8/+15 V Tvj = 150°C tf 0.12 µs
RGoff = 2.4 Ω Tvj = 175°C 0.13
Turn-onenergylossperpulse IC = 300 A, VCE = 400 V, LS = 25 nH Tvj = 25°C 11.5
VGE = -8/+15 V, di/dt = 3400 A/µs (Tvj = 175°C) Tvj = 150°C Eon 13.5 mJ
RGon = 3.6 Ω Tvj = 175°C 14.5
Turn-offenergylossperpulse IC = 300 A, VCE = 400 V, LS = 25 nH Tvj = 25°C 12.0
VGE = -8/+15 V, du/dt = 3200 V/µs (Tvj = 175°C)Tvj = 150°C Eoff 15.5 mJ
RGoff = 2.4 Ω Tvj = 175°C 17.0
SCdata VGE ≤ 15 V, VCC = 400 V
ISC A
VCEmax = VCES -LsCE ·di/dt tP ≤ 3 µs, Tvj = 175°C 2000
Thermalresistance,junctiontocase perIGBT RthJC 0.090 1)
K/W
Thermalresistance,casetoheatsink perIGBT 0.100 1)

λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH K/W

ClampingForceF=700N
Temperatureunderswitchingconditions top continuous
-40 150
for 10s within a period of 30s, occurrence maximum 3000 Tvj op °C
150 175
times over lifetime

1)
with double sided cooling, evaluation according to HybridPACK cool application note
Final Data Sheet 3 V3.0,2020-05-11
 FF450R08A03P2
DoubleSideCooledModule

3Diode,Inverter
3.1MaximumRatedValues
Parameter Conditions Symbol Value Unit
Repetitivepeakreversevoltage Tvj = 25°C VRRM 750 V
Implementedforwardcurrent IFN 450 A
ContinuousDCforwardcurrent IF 300 A
Repetitivepeakforwardcurrent tP = 1 ms IFRM 900 A
I²t-value VR = 0 V, tP = 10 ms, Tvj = 150°C I²t 8500 A²s

3.2CharacteristicValues min. typ. max.

Forwardvoltage IF = 300 A, VGE = 0 V Tvj = 25°C 1.55 1.83
IF = 300 A, VGE = 0 V Tvj = 150°C VF 1.45 V
IF = 300 A, VGE = 0 V Tvj = 175°C 1.40
Peakreverserecoverycurrent IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C) Tvj = 25°C 170
VR = 400 V Tvj = 150°C IRM 235 A
VGE = -8 V Tvj = 175°C 250
Recoveredcharge IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C) Tvj = 25°C 12.0
VR = 400 V Tvj = 150°C Qr 26.0 µC
VGE = -8 V Tvj = 175°C 31.0
Reverserecoveryenergy IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C) Tvj = 25°C 2.90
VR = 400 V Tvj = 150°C Erec 6.60 mJ
VGE = -8 V Tvj = 175°C 8.00
Thermalresistance,junctiontocase perdiode RthJC 0.1451) K/W
Thermalresistance,casetoheatsink perdiode 0.140 1)

λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH K/W

ClampingForceF=700N
Temperatureunderswitchingconditions top continuous
-40 150
for 10s within a period of 30s, occurrence maximum 3000 Tvj op °C
150 175
times over lifetime

4Module
Parameter Conditions Symbol Value Unit
Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL  2.5  kV
Materialofmodulebaseplate  Cu 
Internalisolation basicinsulation(class1,IEC61140)  Al2O3 
Creepagedistance terminaltoheatsink
dCreep   mm
terminaltoterminal 3.5
Clearance terminaltoheatsink
dClear   mm
terminaltoterminal 3.5
Comperativetrackingindex CTI  > 600 
min. typ. max.
Strayinductancemodule LsCE 15 nH
Storagetemperature Tstg -40 125 °C
Terminalconnectiontorque ScrewM5 M - Nm
Mounting force per clamp F - 750 N
Weight G 31 g

5TemperatureSensor
Parameter Conditions Symbol Min Typ Max Unit
Forwardvoltage ITS = 0.22 mA, Tvj = 25°C VTS 2)
2.220 2.280 2.340 2)
V
temperaturecoefficient(tcr) ITS = 0.22 mA TCTS -5.50 mV/K
1)
with double sided cooling, evaluation according to HybridPACK cool application note
2)
Verified by design, not by test
Final Data Sheet 4 V3.0,2020-05-11
 FF450R08A03P2
DoubleSideCooledModule

6CurrentSensor
Parameter Conditions Symbol Min Typ Max Unit
Outputvoltage VCE = 1.85 V, IC = 900 A
Rsense = 2.40 Ω, Tvj = 25°C Vsense 0.55 V
VGE = 15 V

7Customized min. typ. max.

Current Sensor IC = 100 A, Tvj = 175°C, evaluation according to
Ics 80 100 120 mA
Output Current HybridPACKTM DSC application note

Final Data Sheet 5 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

8CharacteristicsDiagrams
outputcharacteristicIGBT,Inverter(typical) outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE) IC=f(VCE)
VGE=15V Tvj=175°C
900 900
Tvj = 25°C VGE = 19V
Tvj = 150°C VGE = 17V
800 Tvj = 175°C 800 VGE = 15V
VGE = 13V
VGE = 11V
700 700 VGE = 9V

600 600

500 500
IC [A]

IC [A]

400 400

300 300

200 200

100 100

0 0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0
VCE [V] VCE [V]

transfercharacteristicIGBT,Inverter(typical) switchinglossesIGBT,Inverter(typical)
IC=f(VGE) Eon=f(IC),Eoff=f(IC)
VCE=20V VGE=-8/+15V,RGon=3.6Ω,RGoff=2.4Ω,VCE=400V
900 40
Tvj = 25°C Eon, Tvj = 150°C
Tvj = 150°C Eoff, Tvj = 150°C
800 Tvj = 175°C 35 Eon, Tvj = 175°C
Eoff, Tvj = 175°C

700
30

600
25

500
E [mJ]
IC [A]

20
400

15
300

10
200

100 5

0 0
5 6 7 8 9 10 11 12 13 0 100 200 300 400 500 600
VGE [V] IC [A]

Final Data Sheet 6 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

switchinglossesIGBT,Inverter(typical) transientthermalimpedanceIGBT,Inverter
Eon=f(RG),Eoff=f(RG) ZthJH=f(t)
VGE=-8/+15V,IC=300A,VCE=400V
30 1
Eon, Tvj = 150°C ZthJH : IGBT
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C

25

0,1

ZthJH [K/W]
E [mJ]

20

0,01

15

i: 1 2 3 4
ri[K/W]: 0,007845 0,02284 0,08379 0,06864
τi[s]: 0,0003479 0,013 0,1423 0,5561

10 0,001
2 4 6 8 10 12 0,001 0,01 0,1 1 10
RG [Ω] t [s]

reversebiassafeoperatingareaIGBT,Inverter(RBSOA) forwardcharacteristicofDiode,Inverter(typical)
IC=f(VCE) IF=f(VF)
VGE=±15V,RGoff=2.4Ω,Tvj=175°C
1000 900
Ic, Modul Tvj = 25°C
IC, Chip Tvj = 150°C
900 800 Tvj = 175°C

800
700

700
600

600
500
IC [A]

IF [A]

500
400
400

300
300

200
200

100 100

0 0
0 100 200 300 400 500 600 700 800 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V] VF [V]

Final Data Sheet 7 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

switchinglossesDiode,Inverter(typical) switchinglossesDiode,Inverter(typical)
Erec=f(IF) Erec=f(RG)
RGon=3.6Ω,VCE=400V IF=300A,VCE=400V
12 12
Erec, Tvj = 150°C Erec, Tvj = 150°C
Erec, Tvj = 175°C Erec, Tvj = 175°C

10 10

8 8
E [mJ]

E [mJ]
6 6

4 4

2 2

0 0
0 100 200 300 400 500 600 2 3 4 5 6 7 8 9 10
IF [A] RG [Ω]

transientthermalimpedanceDiode,Inverter
ZthJH=f(t)

1
ZthJH : Diode

0,1
ZthJH [K/W]

0,01

i: 1 2 3 4
ri[K/W]: 0,01463 0,03657 0,1284 0,09856
τi[s]: 0,0003128 0,01194 0,119 0,4694

0,001
0,001 0,01 0,1 1 10
t [s]

Final Data Sheet 8 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

9Circuitdiagram

Pin Number Symbol I/O Function

1 P DC Supply (+) Positive Supply

2 N DC Supply (-) Negative Supply

3 U AC Output U Phase Output

4 T+L Input Temperature Sensor Plus Low Side

5 T-L Output Temperature Sensor Minus Low Side

6 EL Output IGBT Emitter Output Low Side

7 CSL Output IGBT Current Sensor Output Low Side

8 GL Input Gate Input Low Side

9 T+H Input Temperature Sensor Plus High Side

10 T-H Output Temperature Sensor Minus High Side

11 EH Output IGBT Emitter Output High Side

12 CSH Output IGBT Current Sensor output High Side

13 GH Input Gate Input High Side

14 PS Output P-Terminal Voltage Sensing / IGBT Collector Output

Final Data Sheet 9 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

10Packageoutlines

Final Data Sheet 10 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

RevisionHistory
Major changes since previous revision

Revision History
Reference Date Description
V2.0 2018-12-06 -
V2.1 2020-04-16 Correction of package outlines
V3.0 2020-05-11 Final datasheet

Final Data Sheet 11 V3.0,2020-05-11

 FF450R08A03P2
DoubleSideCooledModule

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Edition2018-08-01

Publishedby
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Last update 2011-11-11

Final Data Sheet 12 V3.0,2020-05-11

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