EE211 2023 Spring

Homework - Problem Set #2

Due: April 3rd, 11:59 pm

Please scan your homework and upload it on the KLMS website.

Problem 1. De Broglie wavelength (10 points)

Consider an electron has a kinetic energy of 0.1eV.
a) Determined the wavelength of the electron.
1 602
20 m
iIT
kgoi
eV 시아
리 - =[ m1s 3 m
ckg ) 9.1 6031
= = J
. =
×
2
P
= ,

∴ '
…
=
6021
2 ( 9. 시 기 ) 1.
×
0
,
0
( 시 ) 측1 21
.7
No

6 626 시 039
ii ) xcm=
ph 3007 HDam
,

: =

5251
미 ×M

b) Explain why they are using an electron microscope to have higher magnification than
optical one in terms of wavelength.

if Kinetic
we make electron have
bigge와 energ ' if wi" ) have shorter

wave
lengh+ hen 3 . 007 mm . And itismackshonte다 Hen the optiial oness

so
magnificationtowe
electton microscope
use hawe
hoghe 다

Problem 2. Momentum of photon and electron (10 points)

a) Find the momentum of a photon in green light of  = 550nm.
6 626 × 1034
- 다 차
hx
,

β= ik 1 , 20 시 0 n
2
/
-

kg
= =
= =
m s
π x
-

9
z 550 × 1o

b) If an electron has the same wavelength,,determine the electron velocity ,

and
momentum.

*
i
" - 시 02
Kgm/
P h
. 20 대
=
1
s

=
9
meve p 1, 2010 래 11 × 10 ) ve ( since me 시 o 31
= .

91(
= =

)
kg
래
1. 20 N0
ve .31 × 시 03 m s
/
: 1
∴
=
9× 103
Problem 3. Uncertainty principle (15points)
a) The electron’s energy is measured with an uncertainty no greater than 0.8eV.
Determine the minimum uncertainty in the time over which the measurement is made.

DEotzi = 1 , 054 × 10
-
34 Js
-
34
19 1 , 054 X 10
16 S
터 10 . 0 eV : . 2002 NO - J : btmin = 그
00 , 222 ×N
1. 2002 No19

b) The uncertainty in the position of an electron is no greater than 1.5A.1 Determine the
minimum uncertainty in its momentum.
= 소
opox

6x
=
0
=
1. 5 A 1, 5 x 10
-
10
m

1 054 X
. 1034
opmin 미마 시 525 m/s
=
. =

1 5 시어
.
.

c) Explain physical conjugate variables between which uncertainty principle works.

momentum andPositio .precisely Themoe

Position
th s kHown,
'e less
the prrcisely
momentum Can he knownLn otherwords.bothcannonbeknownperfectly once
at

time The befween them is with

and
Energy .
velationship Same
pwiorcaser

Problem 4 Particle in a box with an infinite potential (10points)

a) An electron is bounded in a one-dimensional infinite potential well with a width of
75A., Determine the electron energy levels(in eV) for n=1, 2, 3.
Z
h
rni 12
…
고
π
(1 34 π
-

En 054 × 10
=
100
.

=
. 242× .
LeV ]
…

X 6
2m 2 . n
a 이 c n 5 x 100)
K

9 × 103
2 11 .

-
-

3
6 60 ×10 eUe
E3 = 3 6011 시 0 v
∴ 티
.
=

3
2617
-

× 시%
는 = ev

b) Find the probabilities to find the electron at the center of the well in the energy levels
of n= 1,2,3.

sina ( zn) 1
n l
Pobability =
p( n ) =
knlll 1
=
52
P( 1
752
:
=
P ( 31 =
그
0102 D
P( 2 ) =
0
 when xco ca Vcx 1
,
yo ca Zo , ca , = o

yr ψ lkyi - 24 ( 4
( xyz mEψ
2
1
y
+
xy )
+
2 an )t
h
laly 11 = 0
2x 2 Zㆍ 2
-
d
ψ ( xiyiz ) A ( x ) B (y ] CCE )

d
=

a 2

mEA
ㆍ
-2
- ' A (x - B( ) ☆ ( (← )
BC + y B ( ) CCE )
AC AB
) (1
+ f 2 y
axx 0

ay
- =

at h

↓ XABCL
: Al ( x )
'
2 B( ) 22( (E ) 2mt

* aaa t
걸 -
Y +
i - t
k
= 0

ay at

Then assume a른 ( x)
,

Ajaxx
-

+ lkx = o

Solby6ingif
ASinkxx
A , cx
)= =04 ( 필티
thloskyx . Alo 0
" ) :
=
. 요

lcai 라
. 티= :
Ala) = 0
:
Kxa = nx 파

(nx = 1y 2, …
)

Simillarly KYa nyT

'
,Kza = MzF (Py ,
, 어터 z )

I
= 2 …
디 "
,
π
…

m
2mE
+ kzz
kyz Enxnynt
:
k*
nnytnz
.
= ( a *른
:
+
소 ( ]
2
)
 Problem 5. Energy bandgap of semiconductor and photon energy (10 points)
(a) The forbidden bandgap energy in GaAs is 1.42eV (i) Determine the minimum
frequency of an incident photon that can interact with a valence electron and elevate the
electron to the conduction band. (ii) What is the corresponding wavelength?
Fmi=
i) nv =
T = 1 , 42 eV =
2 , 20 × 10
-
15 : Umin , 44
×1014 Hz
3

h
=

100

ii ) c × 을
= .
.
..
2 , 42 × 10 대
x
← = m

3, 44 × 1014
(b) Repeat part (a) for silicon with a bandgap energy of 1.12eV.

hu aJ i
1
i) 1112 eV 1 0 Ho ii) 3 . 0 n 시 0nm
x
= =
2 . =

1 0o어-
시

2171 시 014Hz
.
: vmi" =

Problem 6. Separation of variables (10 points)

Starting with the three-dimensional infinite potential well function given by Equation
(3.59) and using the separation of variables technique, derive Equation (3.60).

공간부족 ,
' .
위에 풀었음

Problem 7. Density of states (10 points)

(a) Determine the total number (#/cm3) of energy states in silicon 1between Ev and Ev -
3kT at (i) T=300K and (ii) T=400K (b) Repeat part (a) for GaAs.
(m*p for silicon = 0.56 m0, m*p for GaAs = 0.48 m0, m0(electron mass) = 9.11 x 10-31 kg),

=⇒KTg
타E 3
JE
. .
Z

EdE
. '
대
)'
]했다
(E ) d = π( 2m삼 .- 4πc2m *) -⑤ 인
h
=

)
L
-

탉 24 ,
-sKT hs

KT
'
= 4π (2m섬 ) '
4π ( 1 .12× 9 . 11
×
1031 / ' X 2 X(3
. KTK KT
…

(3 =
1
루 ) = 2 . 9 n× or ; (
n 3
차

h X 3

'

i ) E 300 k 2
2 9 ⑨× 1055 시 ( 900 k )
'
cmsgo =
411 × 025
.

% (
m
= 11 "
=
. 시 "
4
. 시
7

)
ii ) F =400 g × k
= . 9 n× 1055 시 ( 1200
2
k '
= 6 , 33 시 olacm
( 3
3
3

4π ( 2m* 송 23
:
2
k)
g
4π ( 0196 X 911 × 1031 ) 2 K KT
'
-
X
ㅡ

( 3 Kτ) =
2 ↑ (3
)
- 3
'
= 2 . 30 × 1055 ( 3 KT
×
h h
3
X 3
 i) -
g
'
F 300 k , 36 × 1055 X 3
3116 시 ola cm
( 900k ) C ]
= 2
,
=

Fi
.
: 1400 k
,
g = 2 . 36 × 1055 × ( 1200 k 23
)
= 5 , 02 시
ola[cm J
'

Problem 8. Energy gap and Fermi-level (10 points)

Consider the energy levels shown in Figure P3.42. Let T=300K. (a) If E1 – EF = 0.30 eV,
determine the probability that an energy state at E = E1 is occupied by an electron and ,
the
probability that an energy state at E = E2 is empty. (b) Repeat part (a) if EF – E2 = 0.40 eV
(5 points each)

(a1 fLE ) =
E 51
-
E
[ Fermi -
Pirac distribution )
KT
1+ e
핑

0 13
1
-

300 k

O 13
≈ e
=
0132 × (06
∴ : EE 티 , fC타 ) =
300 야
1t e

← -

EF
=
oi 3 eV , 탸고며 , 12 013
- =
01002 eU

. =
e됨

.00 시에
- f()= 다
E 1
= Ez, " . v
.
V

ife ..

@ 172
-

bkIEF
ol 4ev
-
Ez
fL티 )
=
.
≈ e 300 k =
00 , 45 시013

티 iF = Onzev - 04

-f(Ez) ve
k 300 =
1 90 시 %
.
"

Problem 9. (Energy) Density of states (10 points) (4 points for 3-D, 3 points for 2-D and 1-
D each)
Derive the (energy) density of states in 3-D, 2-D, and 1-D systems

Volume of the shell

1) 33 1
gT ( E ) =
Allowed
Energy states
-

unit Volume of k .

space

consider of and
two kinds of spins but Positive parts x
y z
we
only
.

'
4π k dk
s. ,
g +
L= × 2
설 ,
= kidc
as
3 -
a)
파

=i md )
-2
마트
K는
i
( dk -

r
t

2mEd
m
π ak 3
' m티
트2
md 트
gr ( 타
:
고 =

a
:

-
스

π zh
3 E
2 - 1) p2 π kdk
2
D
alkdk
gi ( E ×2 *
.
)
= -
i
-( π

( K =

kkmE,
dk = hiEmdE -
)

:
gCE ) = π
arnzmEWtE -dE m
= 4
mara :
π
n
d터

매
3 ) dk udc
,
giCE ) =

↑ 2 xz -

ir π

a e
=

π
n

π-
md 다

na IEm dE
 ㅅ
k -space a
Beduced 2
ㅡ

t v t 타
cik
1

:
~
!ㅇㅡ
;?
…
…
1

1 …

A
a
EC 티 2
-

LIK

Problem 10. Effective mass from E-k relation (10 points)

Assume a material has an E-K diagram given by
( ) t )
EK(Conduction)= EC+
Ka
) E1cos 2( =
EC + EXcoscka
2 2

Ka
EK(Valence)= EV− E2sin 2( ) =
Ev EvX)
cos ( ka )
2
-

Let a = 0.4 nm, E1 = 4 eV, and E2 =3 eV.

(a) What is the effective mass for an electron near the bottom of the conduction band? 2

alotk
1 054 )
~
-

Parahla dkd
v

appwnimatinBy 3210
*
= 16 0
-

' E -E
시
0 :m
=
20
=
…

태
-

32 xlD
mach "
x
UXt
and E =
-
51
2
(b) What is the effective mass for holes near the top of the valence band?
= 34 .
7 X10
ikg

*
d
2 - = 20
K
로
- 6시 12110
-
=

, - EC :
dk
By approximatin
=

Oavanoln
E

*
' m

Eand =
t
-

2m
. = 하고
:
71054× 10 -
34 (
고
-
- 12 X 10 20 1 -
20

Problem 11. Fermi-Dirac distribution (10 points) 고H

(a) Under equilibrium conditions and T> 0 K,,what is the probability of an electron state
lirikg
=
azib ×

being occupied if it is located at the Fermi level?

다티다
,

5CE 1 =

1* ek
. ⇒f (타
= ㅠ :
창

(b) If EF is positioned at Ec,,determine (numerical answer required) the probability of

finding electrons is states at Ec +kT.
1

f( E ( tkT ) =
E XKT -

E타 =
itee
I + e KT

(c) The probability state is filled at Ec +kT is equal to the probability a state is empty at
Ec + kT. Where is the Fermi level located?

If( EctkT ) = 1 -f ( Ec +kT ). f( Ectk τ) 또 =

∴ CxKF- EF = 0 :
탸 =
EC + KT