Asymmetric GTO Thyristors - FMCC Group
Asymmetric GTO Thyristors - FMCC Group
Asymmetric GTO Thyristors - FMCC Group
http://fmccgroup.com/products/semiconductors/gto
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-patented free-floating silicon technology -excellent trade-off between on -state and switching losses -cosmic radiation withstand rating
GTOs are optimized for low conduction losses. The typical on-off switching frequency is in the range of 200 - 500 hertz for most applications. GTOs are, by nature, relatively slow switches. Typical transition times from on to off state an d vice versa are in a range of 10 - 30 microseconds. All GTOs require protective networks called "snubbers" for turn-on and turn-off. The turn-on snubber circuit, in essence an inductor, limits the rate of current rise. For turn-off, the GTO requires a device that limits the rate of voltage rise, in essence a capacitor All ABB GTOs are press-pack devices. They are pressed with a relatively high force onto heat-sinks which also serve as electrical contacts to the power terminals.
Standard Part Number V DRM V DC V RRM ITGQM at CS ITAVM ITSM VT V T0 rT TVJM RthJC RthCH Fm Housing
kA
kA
m C
K/kW K/kW kN
17
1500 3
570
10.6
10 2.8
27
15
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http://fmccgroup.com/products/semiconductors/gto
5SGA 2500 1400 20H2501 5SGA 2500 1400 25H2501 5SGA 2500 1400 30J2501 5SGA 4500 2800 06D4502 5SGA 4500 2800 20H4502 5SGA 4500 2800 30J4502 5SGA 4500 2800 30J4505 5SGA 4500 2800 40L4501 Buffer Layer
17 17 17
17 17 12
5 5 3
20 20 40
H H J
17 17 17 17 17
600
4.0
1.90 3.50 125 1.80 0.85 125 2.20 0.60 125 1.90 0.53 125 2.10 0.58 125
50 17 12 12 11
8 5 3 3 3
10 20 40 40 40
D H J J L
-low on-state and dynamic losses -fine pattern types optimized for fast switching -transparent emitter types optimized for low on -state losses Part V DRM V DC Number V RRM ITGQM at CS ITAVM ITSM VT V T0 rT TVJM RthJC RthCH Fm Housing
kA
kA
m C
K/kW K/kW kN
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