PD- 94077

IRG4BC20UD-S
INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features C

• UltraFast: Optimized for high operating frequencies VCES = 600V

8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter para- VCE(on) typ. = 1.85V
G
meter distribution and higher efficiency than
Generation 3 @VGE = 15V, IC = 6.5A
• IGBT co-packaged with HEXFREDTM ultrafast, E
ultra-soft-recovery anti-parallel diodes for use in N-channel
bridge configurations
• Industry standard D2Pak package
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs D2Pak

Absolute Maximum Ratings

Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 13
IC @ TC = 100°C Continuous Collector Current 6.5
ICM Pulsed Collector Current  52 A
ILM Clamped Inductive Load Current ‚ 52
IF @ TC = 100°C Diode Continuous Forward Current 7.0
IFM Diode Maximum Forward Current 52
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 60 W
PD @ TC = 100°C Maximum Power Dissipation 24
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C °C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 2.1
RθCS Case-to-Sink, Flat, Greased Surface 0.5 ––– °C/W
RθJA Junction-to-Ambient, typical socket mount ––– 40
Wt Weight 1.44 ––– g (oz)
www.irf.com 1
1/12/01
IRG4BC20UD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltageƒ 600 ––– ––– V VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.69 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage ––– 1.85 2.1 IC = 6.5A VGE = 15V
––– 2.27 ––– V IC = 13A See Fig. 2, 5
––– 1.87 ––– IC = 6.5A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 ––– 6.0 VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11 ––– mV/°C VCE = VGE, IC = 250µA
gfe Forward Transconductance „ 1.4 4.3 ––– S VCE = 100V, IC = 6.5A
ICES Zero Gate Voltage Collector Current ––– ––– 250 µA VGE = 0V, VCE = 600V
––– ––– 1700 VGE = 0V, VCE = 600V, TJ = 150°C
VFM Diode Forward Voltage Drop ––– 1.4 1.7 V IC = 8.0A See Fig. 13
––– 1.3 1.6 IC = 8.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current ––– ––– ±100 nA VGE = ±20V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) ––– 27 41 IC = 6.5A
Qge Gate - Emitter Charge (turn-on) ––– 4.5 6.8 nC VCC = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) ––– 10 16 VGE = 15V
td(on) Turn-On Delay Time ––– 39 ––– TJ = 25°C
tr Rise Time ––– 15 ––– ns IC = 6.5A, VCC = 480V
td(off) Turn-Off Delay Time ––– 93 140 VGE = 15V, RG = 50Ω
tf Fall Time ––– 110 170 Energy losses include "tail" and
Eon Turn-On Switching Loss ––– 0.16 ––– diode reverse recovery.
Eoff Turn-Off Switching Loss ––– 0.13 ––– mJ See Fig. 9, 10, 11, 18
Ets Total Switching Loss ––– 0.29 0.3
td(on) Turn-On Delay Time ––– 38 ––– TJ = 150°C, See Fig. 9, 10, 11, 18
tr Rise Time ––– 17 ––– ns IC = 6.5A, VCC = 480V
td(off) Turn-Off Delay Time ––– 100 ––– VGE = 15V, RG = 50Ω
tf Fall Time ––– 220 ––– Energy losses include "tail" and
Ets Total Switching Loss ––– 0.49 ––– mJ diode reverse recovery.
LE Internal Emitter Inductance ––– 7.5 ––– nH Measured 5mm from package
Cies Input Capacitance ––– 530 ––– VGE = 0V
Coes Output Capacitance ––– 39 ––– pF VCC = 30V See Fig. 7
Cres Reverse Transfer Capacitance ––– 7.4 ––– ƒ = 1.0MHz
trr Diode Reverse Recovery Time ––– 37 55 ns TJ = 25°C See Fig.
––– 55 90 TJ = 125°C 14 IF = 8.0A
Irr Diode Peak Reverse Recovery Current ––– 3.5 5.0 A TJ = 25°C See Fig.
––– 4.5 8.0 TJ = 125°C 15 VR = 200V
Qrr Diode Reverse Recovery Charge ––– 65 138 nC TJ = 25°C See Fig.
––– 124 360 TJ = 125°C 16 di/dt 200A/µs
di(rec)M /dt Diode Peak Rate of Fall of Recovery ––– 240 ––– A/µs TJ = 25°C See Fig.
During tb ––– 210 ––– TJ = 125°C 17

2 www.irf.com
 IRG4BC20UD-S
12
D u ty c y c le : 5 0 %
T J = 1 2 5 °C
10 T s in k = 9 0 °C
G a te d riv e a s s p e c ifie d
T u rn -o n los s e s in c lu d e
e ffe c ts o f re v e rs e r e c o v e ry
L oa d C u rre n t (A )

8 P ow er Diss ip ation = 13W

6 0% o f ra te d
6 v oltag e

0 A
0.1 1 10 100

f, F re q u e n c y (k H z )

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = IRMS of fundamental)

100 100
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)

T J = 25°C

T J = 150°C
TJ = 1 5 0°C
10 10

TJ = 25 °C

1 1

V G E = 15V V C C = 10 V
20µs PULSE WIDTH 5 µs P U L S E W IDTH A
0.1 0.1
0.1 1 10 4 6 8 10 12
VC E , Collector-to-Emitter Voltage (V) VG E , Ga te -to-Em itter Volta ge (V)

Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics

www.irf.com A 3
IRG4BC20UD-S
14 2.6
V G E = 15 V V G E = 1 5V

V C E , C ollector-to-E m itter V oltag e (V)

8 0 µs P U L S E W ID TH
12 I C = 1 3A
M aximum D C Collector Current (A )

2.2
10

8
1.8
I C = 6 .5A
6

4
1.4
I C = 3.3 A
2

0 1.0 A
25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160

T C , C ase Tem perature (°C) T J , J u n c tio n Te m p e ra tu re (°C )

Fig. 4 - Maximum Collector Current vs. Fig. 5 - Typical Collector-to-Emitter Voltage

Case Temperature vs. Junction Temperature

10
Therm al Response (Z thJ C )

1 D = 0.50

0 .2 0

0 .10
PD M
0.0 5
0 .1
0.0 2 t
0 .01 SIN G LE P U LS E 1
(T H ER M AL R E SP O N SE ) t2
N o te s :
1 . D u ty fa c to r D = t / t
1 2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 1
0 .0 0 0 0 1 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10

t 1 , R ectangular Pulse Duration (sec)

Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case

4 www.irf.com
 IRG4BC20UD-S
1000 20
V GE = 0V , f = 1M H z VCE = 400V

V G E , G a te -to -E m itte r V o lta g e (V )

C ie s = C g e + C g c , C ce S H O R TE D I C = 6 .5 A
C re s = C gc
800 C oes = C ce + C g c 16
C, Ca pac itanc e (p F)

C ie s

600 12

C oes
400 8

C re s
200 4

0 A 0 A
1 10 100 0 5 10 15 20 25 30

V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a rg e (n C )

Fig. 7 - Typical Capacitance vs. Fig. 8 - Typical Gate Charge vs.

Collector-to-Emitter Voltage Gate-to-Emitter Voltage

0.32 10
V CC = 480V R G = 50 Ω
VGE = 15V V GE = 15V
TJ = 25 °C V CC = 4 8 0 V
Total S witching Los se s (m J)
Total Switching Losses (m J)

IC = 6 .5A

0.31

IC = 1 3 A
1

I C = 6 .5 A
0.30

I C = 3 .3 A

0.29 A A
0.1
0 10 20 30 40 50 60 -60 -40 -20 0 20 40 60 80 100 120 140 160

R G , G a te R e sista n c e ( Ω) TJ , J u n ctio n T e m p e ra tu re (°C )

Fig. 9 - Typical Switching Losses vs. Gate Fig. 10 - Typical Switching Losses vs.
Resistance Junction Temperature
www.irf.com 5
IRG4BC20UD-S
1.2 1000
RG = 50 Ω VGGE E= 2 0V
TJ = 1 5 0 °C

I C , C ollecto r-to -Em itter Cu rrent (A)

T J = 12 5 °C
V CC = 480V
Total Switc hing Losses (mJ )

V GE = 15V
0.9 100

S A FE O P E R A TIN G A R E A
0.6 10

0.3 1

0.0 A 0 .1
0 2 4 6 8 10 12 14 1 10 100 1000
I C , C o lle cto r-to -E m itte r C u rre n t (A ) V C E , Collecto r-to-E m itter V oltage (V )

Fig. 11 - Typical Switching Losses vs. Fig. 12 - Turn-Off SOA

Collector-to-Emitter Current
100
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )

10

TJ = 1 50 °C

TJ = 1 25 °C

TJ = 25 °C
1

0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2

F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current

6 www.irf.com
 IRG4BC20UD-S
100 100

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
80

IF = 16 A

I IR R M - (A )
60
t rr - (ns)

I F = 8 .0A
I F = 1 6A
10

IF = 8 .0 A
40

I F = 4.0 A

I F = 4 .0 A
20

0 1
100 1000 100 1000
d i f /d t - (A /µ s) di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt

500 10000

VR = 2 0 0 V VR = 2 0 0 V
T J = 1 2 5 °C T J = 1 2 5 °C
T J = 2 5 °C T J = 2 5 °C
400
di(rec)M/dt - (A /µ s)
Q R R - (nC )

300

I F = 16 A I F = 4 .0A
1000

I F = 8.0 A
200
I F = 16 A
I F = 8 .0A

100

IF = 4.0 A

0 100
100 1000 100 1000
di f /dt - (A /µs) di f /dt - (A /µs)

Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt
www.irf.com 7
IRG4BC20UD-S

Same ty pe
device as
D .U.T.

90%

Vge 10%
430µF
80% VC
of Vce D .U .T. 90%
td(off)

10%
IC 5%
tr tf
t d(on) t=5µs
E on E off
Fig. 18a - Test Circuit for Measurement of
E ts = (Eon +Eoff )
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf

Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining

Eoff, td(off), tf

∫
trr
G A T E V O L T A G E D .U .T . trr
Q rr = id d t
Ic
tx
1 0 % +V g
+Vg
tx
1 0 % Irr
10% Vcc
V cc
D UT VO LTAG E
Vce
AN D CU RRE NT V pk
Irr
1 0 % Ic
Vcc Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
5% Vce
td (o n ) tr

∫
t2

∫
E o n = V ce ie d t t4
t1 E re c = V d id d t
t3
t1 t2 D IO D E R E V E R S E
REC OVERY ENER GY

t3 t4

Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr Defining Erec, trr, Qrr, Irr

8 www.irf.com
 IRG4BC20UD-S

V g G A T E S IG N A L
D E V IC E U N D E R T E S T

C U R R E N T D .U .T .

V O L T A G E IN D .U .T .

C U R R E N T IN D 1

t0 t1 t2

Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

L D.U.T. 480V
RL=
4 X IC @25°C
1000V Vc*
0 - 480V
50V
6000µ F
100 V

Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current
Test Circuit

www.irf.com 9
IRG4BC20UD-S

D2Pak Package Outline

1 0.54 (.4 15) -B - 1 0.16 (.4 00 )

1 0.29 (.4 05) 4.69 (.1 85) RE F.
1.4 0 (.055 ) 4.20 (.1 65)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 15 .4 9 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 14 .7 3 (.5 80) 2.2 9 (.090 )

5 .28 (.20 8) 2.61 (.1 03 )

4 .78 (.18 8) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 5 5) R E F.
3X
1.14 (.0 45) 0 .93 (.03 7 ) 0.5 5 (.022 ) 1.1 4 (.0 4 5)
3X 0.4 6 (.018 )
0 .69 (.02 7 )
5 .08 (.20 0) 0 .25 (.01 0 ) M B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE A D A SS IG N M E N TS 8.89 (.3 50 )
1 D IM EN S IO N S A FTER SO L D ER D IP. 1 - G A TE
2 - D R AIN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 - S O U RC E
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
3 .8 1 (.15 0)

2.5 4 (.100 )
2 .08 (.08 2) 2X
2X

D2Pak Part Marking Information

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK

10 www.irf.com
 IRG4BC20UD-S
D2Pak Tape & Reel Information
TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1.60 (.06 3)
4 .1 0 (.16 1 ) 1.50 (.05 9)
3 .9 0 (.15 3 ) 0.3 68 (.01 45 )
0.3 42 (.01 35 )

F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 1.60 (.457 )

1 .6 5 ( .0 6 5 ) 1 1.40 (.449 ) 2 4.30 (.9 57 )
1 5.42 (.60 9)
2 3.90 (.9 41 )
1 5.22 (.60 1)
TR L
1.75 (.0 69 )
10.90 (.42 9) 1.25 (.0 49 )
10.70 (.42 1) 4.72 (.1 36 )
1 6.10 (.6 3 4) 4.52 (.1 78 )
1 5.90 (.6 2 6)

F E E D D IR E C T IO N

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

33 0.00 60.00 (2.36 2)

(14.173) MIN .
M A X.

30.40 (1.197)
N OT ES : M AX.
1. C O MF OR MS TO EIA-418. 26.40 (1.0 39) 4
2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER. 24.40 (.96 1)
3. D IM ENSIO N M EAS UR ED @ HU B.
3
4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE.

Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (Figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (Figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
www.irf.com 11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/