Mosfet Characterisation
Mosfet Characterisation
Mosfet Characterisation
Homework - 2
Ranie, 20D070063
February 7, 2024
1 Question - 1
For a semiconductor with the above properties, obtain J-V plots under AM1.5G illumination (ignore
dark/injection current) under
Figure 1: Caption
1
Figure 2: Caption
Figure 3: Caption
2
Figure 4: Caption
Figure 5: Caption
3
Figure 6: Caption
2 Question-2
For each of the above cases, estimate the maximum power point conditions (Jmpp, Vmpp), Voc, FF,
and efficiency. Obtain the results through analytical estimates and graphically as well.
Graphical Analytical
Vmpp 0.76 0.758
Impp -42.46 mA/cm2 -42.8 mA/cm2
Pmax -32.276 mW/cm2 -32.45 mW/cm2
Voc 0.845 V 0.846 V
FF 0.862 0.865
Efficiency 0.32276 0.3245
Table 1: Caption
Graphical Analytical
Vmpp 0.28 0.279
Impp -37.31 mA/cm2 -37.32 mA/cm2
Pmax -10.44 mW/cm2 -10.41 mW/cm2
Voc 0.37 V 0.376 V
FF 0.635 0.625
Efficiency 0.1044 0.1041
Table 2: Caption
4
2.3 Both Trap assisted and Radiative
Graphical Analytical
Vmpp 0.28 0.28
Impp -37.3 mA/cm2 -37.3 mA/cm2
Pmax -10.4 mW/cm2 -10.44 mW/cm2
Voc 0.37 V 0.376 V
FF 0.635 0.627
Efficiency 0.104 0.1044
Table 3: Caption
3 Question - 3
Estimate the input power. At various voltages, estimate the power loss due to different mechanisms.
Check whether the sum of power generated and the power dissipated/loss adds up to the input power.
Input Power = 100 mW/cm2
The different loss mechanisms are thermalization loss, below-bandgap energy loss, recombination loss,
and extra thermalization of carriers due to band bending.
Pin = Pout + losses
hc
Z
thermalizationloss = − 1.1eV ) ∗ (no.of photons)dλ
( (1)
λ
Z
hc
belowbandgapenergyloss = ( ) ∗ (no.of photons)dλ (2)
λ
Pout = J ∗ V (3)
It does not add up to the output power due to extra losses, such as the thermalization of carriers
due to band bending and solar cell is not operated at bandgap voltage. The values are there in the excel
sheet attached.
Thermalization loss = 32.57 mW/cm2
below bandgap loss = 18.79 mW/cm2
Pin = 100mW/cm2
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