Catalog

Power Modules
2019/2020
・IGBT MODULES
・SiC MODULES
About StarPower
StarPower Semiconductor Ltd. is a leading power module
company located in Jiaxing China about 59 miles southwest of
Shanghai. Founded in 2005, StarPower designs and manufactures
IGBT/SiC/MOSFET/IPM/FRD/Rectifier modules and customized
modules for applications in the area of inverters, welding
machines, inductive heating, UPS, EV/HEV, solar/wind power and
etc. in the power range of 0.5kW up to more than 1MW.
Through heavy investment in R&Ds, we offer a broad range of

quality and eco-friendly products and services to our customers.
We are committed to excellence in all things we do. The company
has one of the best production lines and well-trained workforce
in the industry. Our mission is to create the most value for the
success of our customers around the globe.
For more information, please go to our website at www.

powersemi.com or call our sales hotline at +86 573 82585700(China);
or go to our StarPower Europe website at www.starpowereurope.
com, or call +41 91 8504141(Europe).
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
04 1
Low Power Modules

L1/L2/L3/L4 Package Series
650V NPC1 12 9
650V 3 Phase Bridge 12 9
650V 3 Phase Bridge with NTC 12 9
10
650V PIM 12
10
1200V PIM 13 11
F1/F2/F3/F4/F5 Package Series 12
12
650V NPC1 Boost 14
13
650V NPC1 14
650V PIM 14 14
1200V NPC2 15 14
15
1200V PIM 15
15
C5/C6 Package Series 16
4

650V PIM 16 18
1200V H Bridge 16
1200V 3 Phase Bridge with NTC 17
1200V PIM 17 23
24
1700V PIM 18
25
Low Power Module Package Outlines 19 27
Medium Power Modules 28
C1/C2/C8 Package Series 29
27 30
650V Boost Chopper
30
650V Buck Chopper 27
31
650V Half Bridge 27 31
1200V Single 28 32
1200V Boost Chopper 28
33
1200V Buck Chopper 28
33
1200V Half Bridge 29 33
1200V H Bridge
L U 30 33
1700V Single 31
1700V Half Bridge 31
C6.1/P3/P4 Package Series
650V Half Bridge 32
650V Half NPC1 Up 32
650V Half NPC1 Low 32
650V 3 Phase Bridge with NTC 32
650V Tri-Pack 32
1200V Half NPC1 Up 33
1200V Half NPC1 Low 33
1200V Tri-Pack 33
Medium Power Module Package Outlines 35
High Power Modules
C3/C4/P1/P2 Package Series
1200V Single 38
1200V Half Bridge with NTC 38
5
1700V Single 38
1700V Half Bridge with NTC 39
High Power Module Package Outlines 40
SiC Mosfet Modules
C2/B3 Package Series
SiC Mosfet 42
SiC Mosfet Module Package Outlines 43
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Low Power Modules

IC（A） VCES IC
L1 : PIM
L2 : 3 phase bridge/PIM
6
L3 : 3 phase bridge/PIM/NPC
L4 : 3 phase bridge
F1 : PIM/NPC/Boost
F2 : PIM/NPC
Low Power Modules
VCES IC
F3 : PIM
F4 : PIM
7
F5 : PIM
C5 : H bridge/3 phase bridge/PIM
C6 : H bridge/3 phase bridge/PIM

STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Medium Power Modules

VCES IC
50 100 150 200 400 600 800 900
C1：chopper/half bridge
C2.0：chopper/half bridge
8
C2.1：single
C8.0：half bridge
C8.1：half bridge
VCES IC
600 650 1200 1700 50 100 150 200 400 600 800 900
C8.2：H bridge
C6.1 black：half bridge/half NPC
9
C6.1 white：half bridge
P3：3 phase bridge
P4：Tri-Pack
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
High Power Modules

VCES IC
Outline/page
1200 1700 3300 400 600 900 1000 1400 2400 3600
C3.0：single
C3.1：half bridge
10
C3.2：single
C4.0：single
P1：half bridge
P2：half bridge
SiC Mosfet Modules
VDSS ID
1200 1700 50 120 200 400 600
11
C2 : half bridge
B3 : half bridge
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
IGBT Module Nomenclature
F 65 (N,F)*
GD =IGBT Modules Voltage/10 e.g. 65=650V Screening Level

S=Screened for Industrial
Applications
Nominal Current
H=Screened for High
IC(@TC=80 ) as e.g. 200=200A
Reliability Applications
Circuit Configuration
SG=Single
CU=Chopper Diode Up Side
CL=Chopper Diode Low Side Package Type
HF=Half Bridge C1=94mmx34mmx30mm,Cu Base
HT=Tri-Pack C2=106mmx62mmx30mm,Cu Base
HH=H Bridge C3=140mmx130mmx38mm,Cu Base
HC=Internal Connected H Bridge C4=190mmx140mmx38mm,Cu Base
ML=3 Level,Diode Clampling,NPC1 C5=107mmx45mmx17mm,Cu Base
12
MP=Upper Half of NPC1 3 Level C6=122mmx62mmx17mm,Cu Base

MN=Lower Half of NPC1 3 Level C8=94mmx48mmx29mm,Cu Base
TL=3 Level,IGBT Active Clampling,NPC2 F1=68.4mmx32.5mmx15.65mm,DBC Base
TU=NPC1 Boost F2=82mmx37.4mmx16.23mm,DBC Base
FF=3 Phase Bridge F3=66mmx32.5mmx21.2mm,DBC Base
FS=3 Phase Open Emitter Output F4=68.4mmx32.5mmx21.15mm,DBC Base
PI=3 Phase Rectifier+Brake+3 Phase Output F5=82mmx37.4mmx21.25mm,DBC Base
PJ=3 Phase Rectifier+Brake+3 Phase Open L1=40mmx56mmx20.5mm,DBC Base
Emitter Output L2=34mmx48mmx15.5mm,DBC Base
PF=3 Phase Rectifier+H Bridge Output L3=48mmx57mmx15.5mm,DBC Base
L4=26mmx36mmx15.5mm,DBC Base
P1=172mmx89mmx38mm,Cu Base
P2=250mmx89mmx38mm,Cu Base
Die Characteristics P3=113mmx140mmx17mm,Cu Base
K=NPT Low Loss P4=100mmx216mmx28.4mm,Cu Base
U=NPT Ultra Fast IGBT
L=SPT+ Low Loss and Fast IGBT
X=Trench FS IGBT,Low Loss
Y=Advanced Trench FS IGBT,Low Loss
F=Advanced Trench FS Ultra Fast IGBT
Without Short-circuit Capacity
Q=Advanced Trench FS Fast IGBT
*N=New Pins Layout

F=PressFIT Pins
SiC Mosfet Module Nomenclature
MD 300 HF R 120 C2 S
MD =SiC Mosfet
Modules
Nominal Current
ID(@TC=80℃ ) as e.g. 300=300A
Circuit Configuration
HF=Half Bridge
13
Die Characteristics
R=SiC Mosfet
Voltage/10 e.g. 120=1200V
Package Type
C2=106mmx62mmx30mm,Cu Base
B3=108mmx62mmx17mm,Cu Base
Screening Level
S=Screened for Industrial Applications
H=Screened for High Reliability Applications
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Low Power Modules

VCES IC VCE(sat) (Eon+Eoff) Rth(J-C) Package
Type V A @Tj=25℃ typ. @Tj=125℃ typ. Circuit
K/W Outline/page
V mJ
650V NPC1
Trench FS IGBT,Low Loss
GD75MLX65L3S 650 75 1.45 2.32 0.514 L3.1/20
GD100MLX65L3S 650 100 1.45 3.36 0.384 L3.1/20
GD150MLX65L3S 650 150 1.45 5.48 0.269 L3.1/20
GD75MLX65L3SF 650 75 1.45 2.32 0.514 L3.3/21
GD100MLX65L3SF 650 100 1.45 3.36 0.384 L3.3/21
GD150MLX65L3SF 650 150 1.45 5.48 0.269 L3.3/21
650V 3 Phase Bridge

GD10FSX65L4S 650 10 1.45 0.44 3.132 L4.0/21
GD15FSX65L4S 650 15 1.45 0.67 2.344 L4.0/21
GD20FSX65L4S 650 20 1.45 0.99 2.063 L4.0/21
GD30FSX65L4S 650 30 1.45 1.04 1.289 L4.0/21
14
650V 3 Phase Bridge with NTC

GD20FSX65L2S 650 20 1.45 0.99 1.955 L2.1/19
GD30FSX65L2S 650 30 1.45 1.04 1.222 L2.1/19
GD50FSX65L2S 650 50 1.45 1.74 0.745 L2.1/19
GD20FSX65L2SF 650 20 1.45 0.99 1.955 L2.6/20
GD30FSX65L2SF 650 30 1.45 1.04 1.222 L2.6/20
GD50FSX65L2SF 650 50 1.45 1.74 0.745 L2.6/20
650V PIM
GD10PJX65L2S 650 10 1.45 0.44 2.968 L2.2/19
GD15PJX65L2S 650 15 1.45 0.67 2.221 L2.2/19
GD20PJX65L2S 650 20 1.45 0.99 1.955 L2.2/19
GD30PJX65L2S 650 30 1.45 1.04 1.222 L2.2/19
GD50PJX65L3S 650 50 1.45 1.74 0.745 L3.0/20
GD10PJX65L2SF 650 10 1.45 0.44 2.968 L2.5/19
GD15PJX65L2SF 650 15 1.45 0.67 2.221 L2.5/19
GD20PJX65L2SF 650 20 1.45 0.99 1.955 L2.5/19
GD30PJX65L2SF 650 30 1.45 1.04 1.222 L2.5/19
GD50PJX65L3SF 650 50 1.45 1.74 0.745 L3.5/21
Low Power Modules
K/W Outline/page
V mJ

Advanced Trench FS IGBT,Low Loss
GD25FSY120L2S 1200 25 1.70 4.78 0.710 L2.1/19
GD35FSY120L2S 1200 35 1.70 6.09 0.552 L2.1/19
GD50FSY120L3S 1200 50 1.70 12.67 0.449 L3.2/20
GD75FSY120L3S 1200 75 1.70 14.40 0.292 L3.2/20
1200V PIM
GD10PJY120L2S 1200 10 1.70 2.27 1.200 L2.2/19
GD15PJY120L2S 1200 15 1.70 3.11 1.020 L2.2/19
GD25PJY120L3S 1200 25 1.70 4.78 0.710 L3.0/20
GD35PJY120L3S 1200 35 1.70 6.09 0.552 L3.0/20
NPT Low Loss
15
GD10PJK120L1S 1200 10 2.20 1.91 1.600 L1.2/19
GD15PJK120L1S 1200 15 2.20 2.95 1.180 L1.2/19
GD10PJK120L2S 1200 10 2.20 1.91 1.200 L2.2/19
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Low Power Modules

K/W Outline/page
V mJ
650V NPC1 Boost

GD30TUX65F1S 650 30 1.45 1.04 1.400 F1.3/22
GD50TUX65F1S 650 50 1.45 1.74 0.854 F1.3/22
GD75TUX65F1S 650 75 1.45 2.32 0.589 F1.3/22
650V NPC1
GD30MLX65F1S 650 30 1.45 1.04 1.400 F1.2/22
GD50MLX65F1S 650 50 1.45 1.74 0.854 F1.2/22
GD75MLX65F1S 650 75 1.45 2.32 0.589 F1.2/22
GD30MLX65F1SF 650 30 1.45 1.04 1.400 F1.4/22
GD75MLX65F1SF 650 75 1.45 2.32 0.589 F1.4/22
16
650V PIM
GD10PJX65F1S 650 10 1.45 0.44 3.402 F1.1/21
GD15PJX65F1S 650 15 1.45 0.67 2.546 F1.1/21
GD20PJX65F1S 650 20 1.45 0.99 2.241 F1.1/21
GD30PJX65F1S 650 30 1.45 1.04 1.400 F1.1/21
GD30PJX65F2S 650 30 1.45 1.04 1.400 F2.0/22
GD50PJX65F2S 650 50 1.45 1.74 0.854 F2.0/22
GD75PJX65F2S 650 75 1.45 2.32 0.589 F2.0/22
GD10PJX65F3S 650 10 1.45 0.44 3.402 F3.0/23
GD15PJX65F3S 650 15 1.45 0.67 2.546 F3.0/23
GD20PJX65F3S 650 20 1.45 0.99 2.241 F3.0/23
GD30PJX65F3S 650 30 1.45 1.04 1.400 F3.0/23
GD10PJX65F4S 650 10 1.45 0.44 3.402 F4.1/23
GD15PJX65F4S 650 15 1.45 0.67 2.546 F4.1/23
GD20PJX65F4S 650 20 1.45 0.99 2.241 F4.1/23
GD30PJX65F4S 650 30 1.45 1.04 1.400 F4.1/23
GD30PJX65F5S 650 30 1.45 1.04 1.400 F5.1/23
GD50PJX65F5S 650 50 1.45 1.74 0.854 F5.1/23
GD75PJX65F5S 650 75 1.45 2.32 0.589 F5.1/23
Low Power Modules
K/W Outline/page
V mJ
1200V NPC2
Advanced Trench FS Fast IGBT
GD40TLQ120F1S 1200 40 2.00 1.57 0.572 F1.2/22
GD80TLQ120F1S 1200 80 2.00 3.14 0.286 F1.2/22
GD40TLQ120F1SF 1200 40 2.00 1.57 0.572 F1.4/22
GD80TLQ120F1SF 1200 80 2.00 3.14 0.286 F1.4/22
1200V PIM
GD10PJY120F1S 1200 10 1.70 2.27 1.340 F1.1/21
GD15PJY120F1S 1200 15 1.70 3.11 1.165 F1.1/21
GD15PJY120F2S 1200 15 1.70 3.11 1.165 F2.0/22
17
GD25PJY120F2S 1200 25 1.70 4.78 0.794 F2.0/22
GD35PJY120F2S 1200 35 1.70 6.09 0.633 F2.0/22
GD50PJY120F2S 1200 50 1.70 12.67 0.515 F2.0/22
GD10PJY120F3S 1200 10 1.70 2.27 1.340 F3.0/23
GD15PJY120F3S 1200 15 1.70 3.11 1.165 F3.0/23
GD10PJY120F4S 1200 10 1.70 2.27 1.340 F4.1/23
GD15PJY120F4S 1200 15 1.70 3.11 1.165 F4.1/23
GD15PJY120F5S 1200 15 1.70 3.11 1.165 F5.1/23
GD25PJY120F5S 1200 25 1.70 4.78 0.794 F5.1/23
GD35PJY120F5S 1200 35 1.70 6.09 0.633 F5.1/23
NPT Low Loss

GD10PJK120F1S 1200 10 2.20 1.91 1.340 F1.1/21
GD15PJK120F2S 1200 15 2.20 2.95 0.984 F2.0/22
GD10PJK120F3S 1200 10 2.20 1.91 1.340 F3.0/23
GD10PJK120F4S 1200 10 2.20 1.91 1.340 F4.1/23
GD15PJK120F5S 1200 15 2.20 2.95 0.984 F5.1/23

STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Low Power Modules

K/W Outline/page
V mJ

GD50FFX65C5S 650 50 1.45 1.7 0.793 C5.2/24
GD75FFX65C5S 650 75 1.45 2.3 0.561 C5.2/24
GD100FFX65C5S 650 100 1.45 3.4 0.452 C5.2/24
GD50FFX65C5SF 650 50 1.45 1.7 0.793 C5.12/24
GD75FFX65C5SF 650 75 1.45 2.3 0.561 C5.12/24
GD100FFX65C5SF 650 100 1.45 3.4 0.452 C5.12/24
GD100FFX65C6S 650 100 1.45 3.4 0.452 C6.2/25
GD150FFX65C6S 650 150 1.45 5.5 0.339 C6.2/25
GD200FFX65C6S 650 200 1.45 6.9 0.247 C6.2/25
GD100FFX65C6SF 650 100 1.45 3.4 0.452 C6.8/26

18
GD150FFX65C6SF 650 150 1.45 5.5 0.339 C6.8/26
GD200FFX65C6SF 650 200 1.45 6.9 0.247 C6.8/26
650V PIM
GD30PIX65C5S 650 30 1.45 1.0 1.025 C5.0/23
GD50PIX65C5S 650 50 1.45 1.7 0.793 C5.0/23
GD50PIX65C6S 650 50 1.45 1.7 0.793 C6.0/25
GD75PIX65C6S 650 75 1.45 2.3 0.561 C6.0/25
GD100PIX65C6S 650 100 1.45 3.4 0.452 C6.0/25
1200V H Bridge
NPT Ultra Fast IGBT
GD50HHU120C5S 1200 50 3.10 7.9 0.316 C5.4/24
GD75HHU120C5S 1200 75 3.10 9.3 0.225 C5.4/24
GD100HHU120C6S 1200 100 3.10 12.7 0.196 C6.4/26
GD150HHU120C6S 1200 150 3.10 23.7 0.106 C6.4/26

Low Power Modules
K/W Outline/page
V mJ

GD25FFY120C5S 1200 25 1.70 4.8 0.808 C5.2/24
GD35FFY120C5S 1200 35 1.70 6.1 0.629 C5.2/24
GD50FFY120C5S 1200 50 1.70 12.7 0.512 C5.2/24
GD75FFY120C5S 1200 75 1.70 14.4 0.394 C5.2/24
GD100FFY120C5S 1200 100 1.70 18.5 0.293 C5.2/24
GD75FFY120C6S 1200 75 1.70 14.4 0.394 C6.2/25
GD100FFY120C6S 1200 100 1.70 18.5 0.293 C6.2/25
GD150FFY120C6S 1200 150 1.70 26.1 0.170 C6.2/25
GD200FFY120C6S 1200 200 1.70 36.8 0.149 C6.2/25
NPT Low Loss
GD25FFK120C5SP 1200 25 2.20 5.5 0.576 C5.6/25
GD35FFK120C5SP 1200 35 2.20 7.9 0.707 C5.6/25
19
GD50FFK120C5SP 1200 50 2.20 12.5 0.332 C5.6/25
GD75FFK120C6S 1200 75 2.20 12.4 0.219 C6.2/25
GD100FFK120C6S 1200 100 2.20 18.3 0.219 C6.2/25
1200V PIM
GD10PIY120C5S 1200 10 1.70 2.3 1.279 C5.0/23
GD15PIY120C5S 1200 15 1.70 3.1 0.904 C5.0/23
GD25PIY120C5S 1200 25 1.70 4.8 0.728 C5.0/23
GD40PIY120C5S 1200 40 1.70 5.8 0.535 C5.0/23
GD25PIY120C5SN 1200 25 1.70 4.8 0.728 C5.3/24
GD35PIY120C5SN 1200 35 1.70 6.1 0.569 C5.3/24
GD50PIY120C5SN 1200 50 1.70 12.7 0.512 C5.3/24
GD40PIY120C6S 1200 40 1.70 5.8 0.535 C6.0/25
GD50PIY120C6S 1200 50 1.70 12.7 0.512 C6.0/25
GD75PIY120C6S 1200 75 1.70 14.4 0.394 C6.0/25
GD50PIY120C6SN 1200 50 1.70 12.7 0.512 C6.3/25
GD75PIY120C6SN 1200 75 1.70 14.4 0.394 C6.3/25
GD100PIY120C6SN 1200 100 1.70 18.5 0.293 C6.3/25
GD150PIY120C6SN 1200 150 1.70 26.1 0.170 C6.3/25
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Low Power Modules

K/W Outline/page
V mJ

SPT+ Low Loss and Fast IGBT
GD75FFL170C6S 1700 75 2.40 47.6 0.273 C6.2/25
GD100FFL170C6S 1700 100 2.40 56.8 0.210 C6.2/25
GD150FFL170C6S 1700 150 2.40 101.0 0.169 C6.2/25
GD100FFL170C6SF 1700 100 2.40 56.8 0.210 C6.8/26
GD150FFL170C6SF 1700 150 2.40 101.0 0.169 C6.8/26
GD75FFX170C6S 1700 75 1.85 51.0 0.319 C6.2/25
GD100FFX170C6S 1700 100 1.85 62.4 0.245 C6.2/25
GD150FFX170C6S 1700 150 1.85 113.7 0.167 C6.2/25
GD100FFX170C6SF 1700 100 1.85 62.4 0.245 C6.8/26
GD150FFX170C6SF 1700 150 1.85 113.7 0.167 C6.8/26
1700V PIM
20

GD50PIL170C6S 1700 50 2.40 33.0 0.380 C6.0/25
GD75PIL170C6S 1700 75 2.40 47.6 0.273 C6.0/25
GD75PFX170C6S 1700 75 1.85 51.0 0.319 C6.7/26
GD100PFX170C6S 1700 100 1.85 62.4 0.245 C6.7/26
GD150PFX170C6S 1700 150 1.85 113.7 0.167 C6.7/26
GD50PIX170C6S 1700 50 1.85 31.3 0.455 C6.0/25
GD75PIX170C6S 1700 75 1.85 51.0 0.319 C6.0/25
Low Power Module Package Outlines
Case L1.2 Case L2.1
21
Case L2.2 Case L2.5
U G1 V G3 W G5 L1
L2
T2 T1
L3
P1 P
EU G2 EV G4 EW G6 N GB NB B
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Case L2.6 Case L3.0
G5 W W G6 E' W
EW
V
V G4
P P T1 T2 EV
G3 E'V
EU
G1 U U G2 E'U
22
Case L3.1 Case L3.2

Case L3.3 Case L3.5

0.63
3.25±0.5
16.2±0.5
12±0.35
51±0.1
48
44.8
41.6
38.4
32
28.8
25.6
22.4
19.2
16
12.8
42.5±0.15
62.8±0.5
48±0.3
53±0.1
9.6
3.2
G3 E3 U U U U G2
3.2
6.4
U U
12.8
∅4.5
䌙㻞
U U E2
16
㻚㻟-0
20±0.2
.1
×
22.5±0.5
8.
5+0
56.7±0.3
25.6
.3
28.8
T1 E1
32
T2 G1
- N N +
E4 G4 - - - - N N N + + + +
23
Case L4.0 Case F1.1
66
B
A
局部视图 A
比例 4 : 1
11.5
1.5
2
1
68.4
15.65
13.5
65.9
64.2
22.5
13 15 17 18 19 20 3
19.8
12 14 16 4.
2-
15
21
24.6
31.5
32.5
5.6
29
局部视图 B 11.25
比例 5 : 1 7.5
22
2-
1
R4
5.6 2.7
.
11 10 9 8 7 6 5 4 3 2 23
5
1.6
0
2.7
5.4
7.5
8.1
15
10.8
13.5
16.2
16.75
20.1
22.8
25.5
25.55
33.5
3.2
55
57.4
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Case F1.2 Case F1.3
66
A
B
66 局部视图 A
A 比例 4 : 1
局部视图 A
11.5
比例 4 : 1 B
11.5
1.5
2
1
1.5
2
1
68.4
15.65
65.9
13.5
64.2
15.65
13.5
68.4 38.8
65.9
64.2
13 14 15 16 17 18 19 20
22.6
12 13 14 15 16 17 18 3
22.6 4.
3 14.8 11 12 2-
4. 21
14.55
15.5
19 2-
11
24.6
31.5
32.5
14.8
5.6
局部视图 B 局部视图 B 11.3
29
比例 5 : 1 12.7 10 比例 5 : 1 9 10 22
24.6
31.5
32.5
5.6
8.05
29
11.3
9 20 7.8
2-
9.9
R4
5.6 8.2 8 5.6
.
2-
5
7.1 8 7 6 5 4 3 2 1
R4
0
.
7 6 5 4 3 2 1
5
1
4-
1.6 1.6
1
0
3
11.9
14.9
16.8
20.65
23.65
30.6
33.6
3.2
4-
3.2
0
2.8
22
10.1
12.9
16.8
19.2
30.8
33.6
55
55 57.4
57.4
24
Case F1.4 Case F2.0

16.23 0.5
3.83
12.37
10.67
82 0.5
80 19 20 21 22 23 24 25 26 27 28
28.5
71 0.2 29 25
30 16.9
.35
30.8 0.2
37.4 0.5
2-R5
34.80
31 8.6
20
2-
4.30
14.25
7 5 32
18 17 16 15 14 13 12 11 10 9 8 3 2 1 2.8
6 4
0
05
50
4-
26.25
0.
5.
0
2.8
5.6
7.5
8.4
14
22
28
29
35
11.2
14.5
16.8
17.3
19.6
22.4
25.2
31.8
36.5
37.8
43.5
44.8
47.7
52.55
2
1
4-
Case F3.0 Case F4.1
4.40
0
3 -0.10 66
0
1.50 -0.10 B
A
43.30 ±0.30
局部视图 A
比例 4 : 1
±0.50
1.50
2
3.40
18.70
20.70
1
17
A
1.5
21.20
2
1
68.4
21.15
19
65.9
64.2
66 ±0.50 22.50
64 22.5
55 ±0.20 19.80 13 15 17 18 19 20 3
19.8
12 14 16 4.
53 2-
51 15 15
21
24.6
31.5
32.5
5.6
11.25
29
11.25
13 15 17 局部视图 B
32.50 ±0.50
R5.5 12 14 16 18 19 20 比例 5 : 1 7.5
0 7.50 22
22 ±0.20
29 ±0.30
2-
31.50
R4
21 5.6 2.7
.
4.30 2.70 11 10 9 8 7 6 5 4 3 2 23
5
22 0
50
1110 9 8 7 6 5 4 3 1 0
.
R4
2
23
1.6
3.2
0
2.7
5.4
7.5
8.1
15
10.8
13.5
16.2
16.75
20.1
22.8
25.5
25.55
33.5
5.40
7.50
8.10
10.80
13.50
16.20
16.75
20.10
22.80
25.50
33.50
0
2.70
15
55
57.4
25
Case F5.1 Case C5.0
6.8
17
3.4
82
71
19 20 21 22 23 24 25 26 27 28
28.5
25
29
3
4.
30 2-
16.9
30.8
37.4
14.25
20
31
8.6
7 5 32
2.8
18 17 16 151413 12 11 10 9 8 6 4 3 2 1
0
2
4-
4-
5.
5
0
2.8
5.6
7.5
8.4
14
22
11.2
14.5
16.8
17.3
19.6
22.4
25.2
28
29
35
26.25
31.8
36.5
37.8
43.5
44.8
47.7
52.55
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Case C5.12 Case C5.2
24 17
1 12
26
Case C5.3 Case C5.4

Case C5.6 Case C6.0
27
Case C6.2 Case C6.3
27 24 21 19
30
16
33
13
1 3 5 7 9 11
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Case C6.4 Case C6.7

28
Case C6.8
27 24 21 19
30
16
33
13
1 3 5 7 9 11
K/W Outline/page
V mJ
650V Boost Chopper

GD200CUX65C2S 650 200 1.45 6.9 0.245 C2.0/35
GD300CUX65C2S 650 300 1.45 12.7 0.157 C2.0/35
GD400CUX65C2S 650 400 1.45 16.2 0.121 C2.0/35
GD600CUX65C2S 650 600 1.45 29.9 0.080 C2.0/35
650V Buck Chopper

GD200CLX65C2S 650 200 1.45 6.9 0.245 C2.0/35
GD300CLX65C2S 650 300 1.45 12.7 0.157 C2.0/35
GD400CLX65C2S 650 400 1.45 16.2 0.121 C2.0/35
29
GD600CLX65C2S 650 600 1.45 29.9 0.080 C2.0/35
650V Half Bridge

GD50HFX65C1S 650 50 1.45 1.7 0.470 C1.0/35
GD75HFX65C1S 650 75 1.45 2.3 0.707 C1.0/35
GD100HFX65C1S 650 100 1.45 3.4 0.452 C1.0/35
GD150HFX65C1S 650 150 1.45 5.5 0.339 C1.0/35
GD200HFX65C1S 650 200 1.45 6.9 0.245 C1.0/35
GD200HFX65C2S 650 200 1.45 6.9 0.245 C2.0/35
GD300HFX65C2S 650 300 1.45 12.7 0.157 C2.0/35
GD400HFX65C2S 650 400 1.45 16.2 0.121 C2.0/35
GD600HFX65C2S 650 600 1.45 29.9 0.080 C2.0/35
GD200HFX65C8S 650 200 1.45 6.9 0.245 C8.0/36
GD300HFX65C8S 650 300 1.45 12.7 0.157 C8.0/36
GD400HFX65C8S 650 400 1.45 16.2 0.121 C8.0/36
GD200HFX65C8SN 650 200 1.45 6.9 0.245 C8.1/36
GD300HFX65C8SN 650 300 1.45 12.7 0.157 C8.1/36
GD400HFX65C8SN 650 400 1.45 16.2 0.121 C8.1/36

STARPOWER
SEMICONDUCTOR LTD.
2019/2020

K/W Outline/page
V mJ
1200V Single
GD300SGY120C2S 1200 300 1.70 57.1 0.093 C2.1/35
GD400SGY120C2S 1200 400 1.70 86.8 0.072 C2.1/35
GD600SGY120C2S 1200 600 1.70 103.8 0.040 C2.1/35
NPT Ultra Fast IGBT

GD400SGU120C2S 1200 400 3.10 41.6 0.047 C2.1/35
GD600SGU120C2S 1200 600 3.10 130.8 0.031 C2.1/35
1200V Boost Chopper

GD100CUY120C1S 1200 100 1.70 12.7 0.512 C1.0/35
GD150CUY120C1S 1200 150 1.70 14.4 0.394 C1.0/35

30
GD100CUY120C2S 1200 100 1.70 18.5 0.278 C2.0/35
GD150CUY120C2S 1200 150 1.70 26.1 0.203 C2.0/35
GD200CUY120C2S 1200 200 1.70 36.8 0.143 C2.0/35
GD300CUY120C2S 1200 300 1.70 57.1 0.093 C2.0/35
GD400CUY120C2S 1200 400 1.70 86.8 0.072 C2.0/35
GD450CUY120C2S 1200 450 1.70 89.8 0.063 C2.0/35

GD600CUY120C2S 1200 600 1.70 103.8 0.040 C2.0/35
1200V Buck Chopper

GD100CLY120C1S 1200 100 1.70 12.7 0.512 C1.0/35
GD150CLY120C1S 1200 150 1.70 14.4 0.394 C1.0/35
GD100CLY120C2S 1200 100 1.70 18.5 0.278 C2.0/35
GD150CLY120C2S 1200 150 1.70 26.1 0.203 C2.0/35
GD200CLY120C2S 1200 200 1.70 36.8 0.143 C2.0/35
GD300CLY120C2S 1200 300 1.70 57.1 0.093 C2.0/35
GD400CLY120C2S 1200 400 1.70 86.8 0.072 C2.0/35
GD450CLY120C2S 1200 450 1.70 89.8 0.063 C2.0/35
GD600CLY120C2S 1200 600 1.70 103.8 0.040 C2.0/35

K/W Outline/page
V mJ
1200V Half Bridge

GD50HFY120C1S 1200 50 1.70 12.7 0.512 C1.0/35
GD75HFY120C1S 1200 75 1.70 14.4 0.394 C1.0/35
GD100HFY120C1S 1200 100 1.70 18.5 0.278 C1.0/35
GD150HFY120C1S 1200 150 1.70 26.1 0.203 C1.0/35
GD100HFY120C2S 1200 100 1.70 18.5 0.278 C2.0/35
GD150HFY120C2S 1200 150 1.70 26.1 0.203 C2.0/35
GD200HFY120C2S 1200 200 1.70 36.8 0.143 C2.0/35
GD300HFY120C2S 1200 300 1.70 57.1 0.093 C2.0/35
GD400HFY120C2S 1200 400 1.70 86.8 0.072 C2.0/35
GD450HFY120C2S 1200 450 1.70 89.8 0.063 C2.0/35
31
GD600HFY120C2S 1200 600 1.70 103.8 0.040 C2.0/35
GD100HFY120C8S 1200 100 1.70 18.5 0.278 C8.0/36
GD150HFY120C8S 1200 150 1.70 26.1 0.203 C8.0/36
GD200HFY120C8S 1200 200 1.70 36.8 0.143 C8.0/36
GD150HFY120C8SN 1200 150 1.70 26.1 0.203 C8.1/36
GD200HFY120C8SN 1200 200 1.70 36.8 0.143 C8.1/36
Advanced Trench FS Ultra Fast IGBT Without Short-circuit Capacity

GD50HFF120C1S 1200 50 1.70 9.1 0.512 C1.0/35
GD75HFF120C1S 1200 75 1.70 9.8 0.394 C1.0/35
GD100HFF120C1S 1200 100 1.70 16.3 0.278 C1.0/35
GD150HFF120C1S 1200 150 1.70 19.6 0.180 C1.0/35
GD100HFF120C2S 1200 100 1.70 16.3 0.278 C2.0/35
GD150HFF120C2S 1200 150 1.70 19.6 0.180 C2.0/35
GD200HFF120C2S 1200 200 1.70 32.7 0.142 C2.0/35
GD300HFF120C2S 1200 300 1.70 49.0 0.094 C2.0/35
GD400HFF120C2S 1200 400 1.70 65.2 0.066 C2.0/35

STARPOWER
SEMICONDUCTOR LTD.
2019/2020

K/W Outline/page
V mJ
NPT Low Loss

GD50HFK120C1S 1200 50 2.20 12.5 0.315 C1.0/35
GD75HFK120C1S 1200 75 2.20 12.4 0.229 C1.0/35
GD100HFK120C1S 1200 100 2.20 18.3 0.180 C1.0/35
GD100HFK120C2S 1200 100 2.20 18.3 0.165 C2.0/35
GD150HFK120C2S 1200 150 2.20 28.2 0.105 C2.0/35
GD200HFK120C2S 1200 200 2.20 41.1 0.092 C2.0/35
GD300HFK120C2S 1200 300 2.20 41.1 0.060 C2.0/35
NPT Ultra Fast IGBT

GD40HFU120C1S 1200 40 3.10 6.3 0.447 C1.0/35
GD50HFU120C1S 1200 50 3.10 7.9 0.302 C1.0/35
GD75HFU120C1S 1200 75 3.10 12.7 0.221 C1.0/35

32
GD100HFU120C1S 1200 100 3.10 12.5 0.190 C1.0/35
GD100HFU120C2S 1200 100 3.10 15.7 0.180 C2.0/35
GD150HFU120C2S 1200 150 3.10 21.5 0.108 C2.0/35
GD200HFU120C2S 1200 200 3.10 24.9 0.095 C2.0/35
GD300HFU120C2S 1200 300 3.10 32.7 0.063 C2.0/35
GD400HFU120C2S 1200 400 3.10 41.6 0.047 C2.0/35
GD100HFU120C8S 1200 100 3.10 10.3 0.158 C8.0/36
GD150HFU120C8S 1200 150 3.10 16.0 0.107 C8.0/36
GD200HFU120C8S 1200 200 3.10 24.9 0.095 C8.0/36
GD150HFU120C8SN 1200 150 3.10 16.0 0.107 C8.1/36
GD200HFU120C8SN 1200 200 3.10 24.9 0.095 C8.1/36
1200V H Bridge
NPT Ultra Fast IGBT
GD40HCU120C8S 1200 40 3.10 6.3 0.447 C8.2/36
GD50HCU120C8S 1200 50 3.10 7.9 0.312 C8.2/36
GD75HCU120C8S 1200 75 3.10 11.9 0.210 C8.2/36

K/W Outline/page
V mJ
1700V Single
GD400SGL170C2S 1700 400 2.40 167.7 0.054 C2.1/35
GD600SGL170C2S 1700 600 2.40 388.0 0.040 C2.1/35

GD400SGX170C2S 1700 400 1.85 304.0 0.062 C2.1/35
GD600SGX170C2S 1700 600 1.85 333.0 0.041 C2.1/35
1700V Half Bridge

GD50HFL170C1S 1700 50 2.40 33.0 0.339 C1.0/35
GD75HFL170C1S 1700 75 2.40 47.6 0.262 C1.0/35
33
GD100HFL170C1S 1700 100 2.40 56.8 0.217 C1.0/35
GD100HFL170C2S 1700 100 2.40 63.3 0.217 C2.0/35
GD150HFL170C2S 1700 150 2.40 101.0 0.133 C2.0/35
GD200HFL170C2S 1700 200 2.40 152.1 0.108 C2.0/35
GD300HFL170C2S 1700 300 2.40 211.7 0.081 C2.0/35
GD400HFL170C2S 1700 400 2.40 167.7 0.054 C2.0/35

GD50HFX170C1S 1700 50 1.85 31.3 0.358 C1.0/35
GD75HFX170C1S 1700 75 1.85 51.0 0.268 C1.0/35
GD100HFX170C1S 1700 100 1.85 62.4 0.237 C1.0/35
GD100HFX170C2S 1700 100 1.85 62.4 0.237 C2.0/35
GD150HFX170C2S 1700 150 1.85 113.7 0.133 C2.0/35
GD200HFX170C2S 1700 200 1.85 143.7 0.118 C2.0/35
GD300HFX170C2S 1700 300 1.85 195.8 0.082 C2.0/35
GD400HFX170C2S 1700 400 1.85 304.0 0.062 C2.0/35

STARPOWER
SEMICONDUCTOR LTD.
2019/2020

K/W Outline/page
V mJ
650V Half Bridge

GD300HFX65C6S 650 300 1.45 12.7 0.148 C6.1/35
GD450HFX65C6S 650 450 1.45 20.3 0.116 C6.1/35
GD600HFX65C6S 650 600 1.45 29.9 0.091 C6.1/35
GD300HFX65C6H 650 300 1.45 12.7 0.157 C6.12/36
GD450HFX65C6H 650 450 1.45 20.3 0.116 C6.12/36
GD600HFX65C6H 650 600 1.45 29.9 0.091 C6.12/36
650V Half NPC1 Up

GD300MPX65C6S 650 300 1.45 12.7 0.157 C6.1/35
GD400MPX65C6S 650 400 1.45 16.2 0.121 C6.1/35

34
650V Half NPC1 Low

GD300MNX65C6S 650 300 1.45 12.7 0.157 C6.1/35
GD400MNX65C6S 650 400 1.45 16.2 0.121 C6.1/35

GD200FFX65P3S 650 200 1.45 8.1 0.200 P3.0/37
GD300FFX65P3S 650 300 1.45 12.7 0.168 P3.0/37
GD400FFX65P3S 650 400 1.45 16.2 0.122 P3.0/37
GD200FFX65P3H 650 200 1.45 8.1 0.400 P3.1/37
GD300FFX65P3H 650 300 1.45 12.7 0.257 P3.1/37
GD400FFX65P3H 650 400 1.45 16.2 0.200 P3.1/37
650V Tri-Pack
GD600HTX65P4S 650 600 1.45 22.7 0.120 P4.0/37
GD800HTX65P4S 650 800 1.45 28.0 0.100 P4.0/37

K/W Outline/page
V mJ
1200V Half Bridge

GD150HFY120C6S 1200 150 1.70 26.1 0.136 C6.1/35
GD225HFY120C6S 1200 225 1.70 40.7 0.122 C6.1/35
GD300HFY120C6S 1200 300 1.70 57.1 0.093 C6.1/35
GD450HFY120C6S 1200 450 1.70 89.8 0.069 C6.1/35
GD600HFY120C6S 1200 600 1.70 96.0 0.038 C6.1/35
GD150HFY120C6H 1200 150 1.70 26.1 0.136 C6.12/36
GD225HFY120C6H 1200 225 1.70 40.7 0.122 C6.12/36
GD300HFY120C6H 1200 300 1.70 57.1 0.093 C6.12/36
GD450HFY120C6H 1200 450 1.70 89.8 0.069 C6.12/36
GD600HFY120C6H 1200 600 1.70 96.0 0.038 C6.12/36
35
NPT Ultra Fast IGBT
GD150HFU120C6S 1200 150 3.10 23.7 0.106 C6.1/35
GD225HFU120C6S 1200 225 3.10 33.0 0.078 C6.1/35
GD300HFU120C6S 1200 300 3.10 32.7 0.066 C6.1/35
1200V Half NPC1 Up

GD300MPY120C6S 1200 300 1.70 57.1 0.093 C6.1/35
1200V Half NPC1 Low

GD300MNY120C6S 1200 300 1.70 57.1 0.093 C6.1/35
1200V Tri-Pack

GD400HTY120P4S 1200 400 1.70 46.4 0.110 P4.0/37
STARPOWER
SEMICONDUCTOR LTD.
2019/2020

Type V A @Tj=25℃ typ. @Tj=125℃ typ. K/W Circuit
Outline/page
V mJ
1700V Half Bridge

GD150HFL170C6S 1700 150 2.40 101.0 0.117 C6.1/35
GD225HFL170C6S 1700 225 2.40 164.5 0.091 C6.1/35
GD300HFL170C6S 1700 300 2.40 205.0 0.074 C6.1/35
GD450HFL170C6S 1700 450 2.40 286.0 0.046 C6.1/35
GD600HFL170C6S 1700 600 2.40 371.0 0.035 C6.1/35

GD150HFX170C6S 1700 150 1.85 113.7 0.134 C6.1/35
GD225HFX170C6S 1700 225 1.85 157.0 0.113 C6.1/35
GD300HFX170C6S 1700 300 1.85 212.0 0.082 C6.1/35
GD450HFX170C6S 1700 450 1.85 323.0 0.059 C6.1/35

36
GD600HFX170C6S 1700 600 1.85 434.0 0.045 C6.1/35

Medium Power Module Package Outlines
Case C1.0 Case C2.0
37
Case C2.1 Case C6.1
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
Case C6.12 Case C8.0
9 8 7 6
10 4
11 3
1 2
A
B
38
Case C8.1 Case C8.2

Case P3.0 Case P3.1
39
Case P4.0
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
High Power Modules

K/W Outline/page
V mJ
1200V Single
GD800SGY120C3S 1200 800 1.70 154 0.028 C3.0/40
GD1200SGY120C3S 1200 1200 1.70 387 0.020 C3.0/40
GD1600SGY120C3S 1200 1600 1.70 573 0.015 C3.0/40
GD2400SGY120C3S 1200 2400 1.70 945 0.011 C3.0/40
GD800SGY120C3SN 1200 800 1.70 154 0.028 C3.2/40
GD1200SGY120C3SN 1200 1200 1.70 387 0.020 C3.2/40
GD1600SGY120C3SN 1200 1600 1.70 573 0.015 C3.2/40
GD2400SGY120C3SN 1200 2400 1.70 945 0.011 C3.2/40
GD2400SGY120C4S 1200 2400 1.70 945 0.011 C4.0/40
GD3600SGY120C4S 1200 3600 1.70 1377 0.008 C4.0/40
1200V Half Bridge with NTC

40

GD450HFY120P1S 1200 450 1.70 103 0.058 P1.0/41
GD600HFY120P1S 1200 600 1.70 124 0.045 P1.0/41
GD900HFY120P1S 1200 900 1.70 240 0.029 P1.0/41
GD1400HFY120P2S 1200 1400 1.70 331 0.019 P2.0/41
1200V Half Bridge

GD600HFY120C3S 1200 600 1.70 96 0.044 C3.1/40
GD800HFY120C3S 1200 800 1.70 174 0.032 C3.1/40
GD1200HFY120C3S 1200 1200 1.70 439 0.025 C3.1/40
1700V Single
GD800SGL170C3S 1700 800 2.40 512 0.021 C3.0/40
GD1200SGL170C3S 1700 1200 2.40 674 0.017 C3.0/40
GD1600SGL170C3S 1700 1600 2.40 1070 0.013 C3.0/40
GD2400SGL170C3S 1700 2400 2.40 1580 0.010 C3.0/40
GD800SGL170C3SN 1700 800 2.40 512 0.021 C3.2/40
GD1200SGL170C3SN 1700 1200 2.40 674 0.017 C3.2/40
GD1600SGL170C3SN 1700 1600 2.40 1070 0.013 C3.2/40
GD2400SGL170C3SN 1700 2400 2.40 1580 0.010 C3.2/40
High Power Modules
K/W Outline/page
V mJ
GD2400SGL170C4S 1700 2400 2.40 1580 0.009 C4.0/40

GD3600SGL170C4S 1700 3600 2.40 2328 0.006 C4.0/40

GD800SGX170C3S 1700 800 1.85 605 0.026 C3.0/40
GD1200SGX170C3S 1700 1200 1.85 867 0.019 C3.0/40
GD1600SGX170C3S 1700 1600 1.85 1190 0.015 C3.0/40
GD2400SGX170C3S 1700 2400 1.85 1554 0.011 C3.0/40
GD800SGX170C3SN 1700 800 1.85 605 0.026 C3.2/40
GD1200SGX170C3SN 1700 1200 1.85 867 0.019 C3.2/40
GD1600SGX170C3SN 1700 1600 1.85 1190 0.015 C3.2/40
GD2400SGX170C3SN 1700 2400 1.85 1554 0.011 C3.2/40
GD2400SGX170C4S 1700 2400 1.85 1554 0.010 C4.0/40
GD3600SGX170C4S 1700 3600 1.85 2698 0.007 C4.0/40
41
1700V Half Bridge with NTC
GD650HFL170P1S 1700 650 2.40 505 0.035 P1.0/41
GD1000HFL170P2S 1700 1000 2.40 590 0.023 P2.0/41
GD450HFX170P1S 1700 450 1.85 379 0.055 P1.0/41
GD650HFX170P1S 1700 600 1.85 563 0.038 P1.0/41
GD1000HFX170P2S 1700 1000 1.85 763 0.025 P2.0/41
GD1400HFX170P2S 1700 1400 1.85 1250 0.016 P2.0/41
1700V Half Bridge

GD600HFL170C3S 1700 600 2.40 371 0.033 C3.1/40
GD800HFL170C3S 1700 800 2.40 512 0.026 C3.1/40
GD1200HFL170C3S 1700 1200 2.40 674 0.022 C3.1/40
GD600HFX170C3S 1700 600 1.85 434 0.034 C3.1/40
GD800HFX170C3S 1700 800 1.85 605 0.031 C3.1/40
GD1200HFX170C3S 1700 1200 1.85 867 0.024 C3.1/40
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
High Power Module Package Outlines
Case C3.0 Case C3.1

42
Case C3.2 Case C4.0

High Power Module Package Outlines
Case P1.0 Case P2.0
43
STARPOWER
SEMICONDUCTOR LTD.
2019/2020
SiC Mosfet Modules
VDSS ID RDS(on) Rth(J-C) Package

Type @Tj=25℃ max. Circuit
V A K/W Outline/page
mOhm
SiC Mosfet
MD120HFR120C2S 1200 120 13 0.181 C2.0/43

MD300HFR120C2S 1200 300 6.5 0.100 C2.0/43
MD400HFR120C2S 1200 400 4.4 0.074 C2.0/43
MD200HFR170C2S 1700 200 8.7 0.058 C2.0/43
MD250HFR170C2S 1700 250 10.4 0.069 C2.0/43
MD120HFR120B3S 1200 120 13 0.181 B3.7/43
MD300HFR120B3S 1200 300 6.5 0.100 B3.7/43
MD400HFR120B3S 1200 400 4.4 0.074 B3.7/43
MD200HFR170B3S 1700 200 8.7 0.058 B3.7/43
MD250HFR170B3S 1700 250 10.4 0.069 B3.7/43
44
SiC Mosfet Modules Package Outlines
Case C2.0 Case B3.7
45
STARPOWER
SEMICONDUCTOR LTD.
Sintering Process For High Reliability
Features and Benefits

· Chip mounting by sinter interconnects
· Increased operation temperature to 175 °C
· Increased thermal and power cycling capabilities
· Low thermal resistance
· Better suited for high reliability, such as EV/HEV applications
StarPower Locations
Switzerland
Beijing◆◆Qingdao
Wuhan◆
Jinan◆
Chengdu◆Nanjing◆
Jiax ing▲ Shanghai
◆Shenzhen
▲Headquarter
StarPower Europe AG
Shanghai Dos Technologies Ltd.
Sales Offices
988 Kexing Road, Jiaxing, China 314006

www.powersemi.com Tel: +86 573 82585600 Fax: +86 573 82585601
Beijing Office Shenzhen Office Nanjing Office Chengdu Office

Tel: +86 10-57236290 Tel: +86 573 82585600 Tel: +86 25 84937665 Tel: +86 28 84544069
Fax: +86 10-88696821 Fax: +86 573 82585776 Fax: +86 25 84937665 Fax: +86 28 84544069
Jinan Office Qingdao Office Wuhan Office

Tel: +86 531 55504712 Tel: +86 532 68982978 Tel: +86 27 88739616
Fax: +86 531 55504712 Fax: +86 532 68982978 Fax: +86 27 88739606
StarPower Europe AG
Ai Ciòss, CH - 6593 Cadenazzo, Switzerland Tel: +41 91 8504141 Fax: +41 91 8401909
www.starpowereurope.com

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Power Modules

Through heavy investment in R&Ds, we offer a broad range of

For more information, please go to our website at www.

Low Power Modules

650V 3 Phase Bridge with NTC 16 17

Low Power Modules

C5 : H bridge/3 phase bridge/PIM

C6 : H bridge/3 phase bridge/PIM

Medium Power Modules

50 100 150 200 400 600 800 900

C6.1 black：half bridge/half NPC

P3：3 phase bridge

High Power Modules

IGBT Module Nomenclature

GD =IGBT Modules Voltage/10 e.g. 65=650V Screening Level

MP=Upper Half of NPC1 3 Level C6=122mmx62mmx17mm,Cu Base

*N=New Pins Layout

Voltage/10 e.g. 120=1200V

Low Power Modules

650V 3 Phase Bridge

650V 3 Phase Bridge with NTC

1200V 3 Phase Bridge with NTC

Low Power Modules

650V NPC1 Boost

GD80TLQ120F1S 1200 80 2.00 3.14 0.286 F1.2/22

GD40TLQ120F1SF 1200 40 2.00 1.57 0.572 F1.4/22

GD80TLQ120F1SF 1200 80 2.00 3.14 0.286 F1.4/22

GD15PJY120F1S 1200 15 1.70 3.11 1.165 F1.1/21

GD15PJY120F2S 1200 15 1.70 3.11 1.165 F2.0/22

GD35PJY120F2S 1200 35 1.70 6.09 0.633 F2.0/22

GD50PJY120F2S 1200 50 1.70 12.67 0.515 F2.0/22

GD10PJY120F3S 1200 10 1.70 2.27 1.340 F3.0/23

GD15PJY120F3S 1200 15 1.70 3.11 1.165 F3.0/23

GD10PJY120F4S 1200 10 1.70 2.27 1.340 F4.1/23

GD15PJY120F4S 1200 15 1.70 3.11 1.165 F4.1/23

GD15PJY120F5S 1200 15 1.70 3.11 1.165 F5.1/23

GD25PJY120F5S 1200 25 1.70 4.78 0.794 F5.1/23

GD35PJY120F5S 1200 35 1.70 6.09 0.633 F5.1/23

NPT Low Loss

GD15PJK120F2S 1200 15 2.20 2.95 0.984 F2.0/22

GD10PJK120F3S 1200 10 2.20 1.91 1.340 F3.0/23

GD10PJK120F4S 1200 10 2.20 1.91 1.340 F4.1/23

GD15PJK120F5S 1200 15 2.20 2.95 0.984 F5.1/23

Low Power Modules

650V 3 Phase Bridge with NTC

GD75FFX65C5S 650 75 1.45 2.3 0.561 C5.2/24

GD100FFX65C5S 650 100 1.45 3.4 0.452 C5.2/24

GD50FFX65C5SF 650 50 1.45 1.7 0.793 C5.12/24

GD75FFX65C5SF 650 75 1.45 2.3 0.561 C5.12/24

GD100FFX65C5SF 650 100 1.45 3.4 0.452 C5.12/24

GD100FFX65C6S 650 100 1.45 3.4 0.452 C6.2/25

GD150FFX65C6S 650 150 1.45 5.5 0.339 C6.2/25

GD200FFX65C6S 650 200 1.45 6.9 0.247 C6.2/25

GD100FFX65C6SF 650 100 1.45 3.4 0.452 C6.8/26

GD150FFX65C6SF 650 150 1.45 5.5 0.339 C6.8/26

GD200FFX65C6SF 650 200 1.45 6.9 0.247 C6.8/26

GD50PIX65C5S 650 50 1.45 1.7 0.793 C5.0/23

GD50PIX65C6S 650 50 1.45 1.7 0.793 C6.0/25

GD75PIX65C6S 650 75 1.45 2.3 0.561 C6.0/25

GD100PIX65C6S 650 100 1.45 3.4 0.452 C6.0/25