PN Junction Diode-1

PN Junction Diode
A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor

creating a potential barrier voltage across the diode junction
The PN junction diode consists of a p-region and n-region separated by a depletion region where
charge is stored. The effect described in the previous tutorial is achieved without any external
voltage being applied to the actual PN junction resulting in the junction being in a state of
equilibrium.
However, if we were to make electrical connections at the ends of both the N-type and the P-type
materials and then connect them to a battery source, an additional energy source now exists to
overcome the potential barrier.
The effect of adding this additional energy source results in the free electrons being able to cross
the depletion region from one side to the other. The behaviour of the PN junction with regards to
the potential barrier’s width produces an asymmetrical conducting two terminal device, better
known as the PN Junction Diode.
A PN Junction Diode is one of the simplest semiconductor devices around, and which has the
electrical characteristic of passing current through itself in one direction only. However, unlike a
resistor, a diode does not behave linearly with respect to the applied voltage. Instead it has an
exponential current-voltage ( I-V ) relationship and therefore we can not described its operation
by simply using an equation such as Ohm’s law.
If a suitable positive voltage (forward bias) is applied between the two ends of the PN junction, it
can supply free electrons and holes with the extra energy they require to cross the junction as the
width of the depletion layer around the PN junction is decreased.
By applying a negative voltage (reverse bias) results in the free charges being pulled away from
the junction resulting in the depletion layer width being increased. This has the effect of increasing
or decreasing the effective resistance of the junction itself allowing or blocking the flow of current
through the diodes pn-junction.
Then the depletion layer widens with an increase in the application of a reverse voltage and
narrows with an increase in the application of a forward voltage. This is due to the differences in
the electrical properties on the two sides of the PN junction resulting in physical changes taking
place. One of the results produces rectification as seen in the PN junction diodes static I-V (current-
voltage) characteristics. Rectification is shown by an asymmetrical current flow when the polarity
of bias voltage is altered as shown below.
Junction Diode Symbol and Static I-V Characteristics

But before we can use the PN junction as a practical device or as a rectifying device we need to
firstly bias the junction, that is connect a voltage potential across it. On the voltage axis above,
“Reverse Bias” refers to an external voltage potential which increases the potential barrier. An
external voltage which decreases the potential barrier is said to act in the “Forward Bias” direction.
There are two operating regions and three possible “biasing” conditions for the standard Junction
Diode and these are:
• 1. Zero Bias – No external voltage potential is applied to the PN junction diode.
• 2. Reverse Bias – The voltage potential is connected negative, (-ve) to the P-type material
and positive, (+ve) to the N-type material across the diode which has the effect
of Increasing the PN junction diode’s width.
• 3. Forward Bias – The voltage potential is connected positive, (+ve) to the P-type material
and negative, (-ve) to the N-type material across the diode which has the effect
of Decreasing the PN junction diodes width.
Zero Biased Junction Diode

When a diode is connected in a Zero Bias condition, no external potential energy is applied to the
PN junction. However if the diodes terminals are shorted together, a few holes (majority carriers)
in the P-type material with enough energy to overcome the potential barrier will move across the
junction against this barrier potential. This is known as the “Forward Current” and is referenced
as IF
Likewise, holes generated in the N-type material (minority carriers), find this situation favourable
and move across the junction in the opposite direction. This is known as the “Reverse Current”
and is referenced as IR. This transfer of electrons and holes back and forth across the PN junction
is known as diffusion, as shown below.
Zero Biased PN Junction Diode
The potential barrier that now exists discourages the diffusion of any more majority carriers across
the junction. However, the potential barrier helps minority carriers (few free electrons in the P-
region and few holes in the N-region) to drift across the junction.
Then an “Equilibrium” or balance will be established when the majority carriers are equal and both
moving in opposite directions, so that the net result is zero current flowing in the circuit. When
this occurs the junction is said to be in a state of “Dynamic Equilibrium“.
The minority carriers are constantly generated due to thermal energy so this state of equilibrium
can be broken by raising the temperature of the PN junction causing an increase in the generation
of minority carriers, thereby resulting in an increase in leakage current but an electric current
cannot flow since no circuit has been connected to the PN junction.
Reverse Biased PN Junction Diode

When a diode is connected in a Reverse Bias condition, a positive voltage is applied to the N-type
material and a negative voltage is applied to the P-type material.
The positive voltage applied to the N-type material attracts electrons towards the positive electrode
and away from the junction, while the holes in the P-type end are also attracted away from the
junction towards the negative electrode.
The net result is that the depletion layer grows wider due to a lack of electrons and holes and
presents a high impedance path, almost an insulator and a high potential barrier is created across
the junction thus preventing current from flowing through the semiconductor material.
Increase in the Depletion Layer due to Reverse Bias
This condition represents a high resistance value to the PN junction and practically zero current
flows through the junction diode with an increase in bias voltage. However, a very small reverse
leakage current does flow through the junction which can normally be measured in micro-
amperes, ( μA ).
One final point, if the reverse bias voltage Vr applied to the diode is increased to a sufficiently
high enough value, it will cause the diode’s PN junction to overheat and fail due to the avalanche
effect around the junction. This may cause the diode to become shorted and will result in the flow
of maximum circuit current, and this shown as a step downward slope in the reverse static
characteristics curve below.
Reverse Characteristics Curve for a Junction Diode

Sometimes this avalanche effect has practical applications in voltage stabilising circuits where a
series limiting resistor is used with the diode to limit this reverse breakdown current to a preset
maximum value thereby producing a fixed voltage output across the diode. These types of diodes
are commonly known as Zener Diodes and are discussed in a later tutorial.
Forward Biased PN Junction Diode

When a diode is connected in a Forward Bias condition, a negative voltage is applied to the N-
type material and a positive voltage is applied to the P-type material. If this external voltage
becomes greater than the value of the potential barrier, approx. 0.7 volts for silicon and 0.3 volts
for germanium, the potential barriers opposition will be overcome and current will start to flow.
This is because the negative voltage pushes or repels electrons towards the junction giving them
the energy to cross over and combine with the holes being pushed in the opposite direction towards
the junction by the positive voltage. This results in a characteristics curve of zero current flowing
up to this voltage point, called the “knee” on the static curves and then a high current flow through
the diode with little increase in the external voltage as shown below.
Forward Characteristics Curve for a Junction Diode

The application of a forward biasing voltage on the junction diode results in the depletion layer
becoming very thin and narrow which represents a low impedance path through the junction
thereby allowing high currents to flow. The point at which this sudden increase in current takes
place is represented on the static I-V characteristics curve above as the “knee” point.
Reduction in the Depletion Layer due to Forward Bias

This condition represents the low resistance path through the PN junction allowing very large
currents to flow through the diode with only a small increase in bias voltage. The actual potential
difference across the junction or diode is kept constant by the action of the depletion layer at
approximately 0.3v for germanium and approximately 0.7v for silicon junction diodes.
Since the diode can conduct “infinite” current above this knee point as it effectively becomes a
short circuit, therefore resistors are used in series with the diode to limit its current flow. Exceeding
its maximum forward current specification causes the device to dissipate more power in the form
of heat than it was designed for resulting in a very quick failure of the device.

PN Junction Diode-1

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PN Junction Diode

A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor

Junction Diode Symbol and Static I-V Characteristics

Zero Biased Junction Diode

Zero Biased PN Junction Diode

Reverse Biased PN Junction Diode

Increase in the Depletion Layer due to Reverse Bias

Reverse Characteristics Curve for a Junction Diode

Forward Biased PN Junction Diode

Forward Characteristics Curve for a Junction Diode

Reduction in the Depletion Layer due to Forward Bias

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