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    Transistors MCQ PDF (Erexams - Com)

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    Captain America
    The document contains a set of multiple choice questions and answers about transistors. It covers transistor basics like the number of PN junctions, doping of different regions, current carriers, and biasing configurations like common emitter, common base, and common collector arrangements.

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    © All Rights Reserved
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    Transistors MCQ PDF (Erexams - Com)

    Uploaded by

    Captain America
    11 views8 pages
    The document contains a set of multiple choice questions and answers about transistors. It covers transistor basics like the number of PN junctions, doping of different regions, current carriers, and biasing configurations like common emitter, common base, and common collector arrangements.

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    Transistors MCQ PDF [erexams.com]

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    The document contains a set of multiple choice questions and answers about transistors. It covers transistor basics like the number of PN junctions, doping of different regions, current carriers, and biasing configurations like common emitter, common base, and common collector arrangements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    11 views8 pages

    Transistors MCQ PDF (Erexams - Com)

    Uploaded by

    Captain America
    The document contains a set of multiple choice questions and answers about transistors. It covers transistor basics like the number of PN junctions, doping of different regions, current carriers, and biasing configurations like common emitter, common base, and common collector arrangements.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    TRANSISTORS Questions and Answers pdf :-
    1. A transistor has …………………
    1. one pn junction
    2. two pn junctions
    3. three pn junctions
    4. four pn junctions
    ANS : 2
    2. The number of depletion layers in a transistor is …………
    four
    three
    one
    two
    ANS : 4
    3. The base of a transistor is ………….. doped
    heavily
    moderately
    lightly
    none of the above
    ANS : 3

    TRANSISTORS Questions and Answers pdf

    4. The element that has the biggest size in a transistor is ………………..


    collector
    base
    emitter
    collector-base-junction
    ANS : 1
    5. In a pnp transistor, the current carriers are ………….
    acceptor ions
    donor ions
    free electrons
    holes
    ANS : 4
    6. The collector of a transistor is …………. doped
    heavily
    moderately
    lightly
    none of the above
    ANS : 2
    7. A transistor is a …………… operated device
    current
    voltage
    both voltage and current
    none of the above
    ANS : 1
    8. In a npn transistor, ……………. are the minority carriers
    free electrons
    holes
    donor ions
    acceptor ions
    ANS : 2
    9. The emitter of a transistor is ………………… doped
    lightly
    heavily
    moderately
    none of the above
    ANS : 2
    10. In a transistor, the base current is about ………….. of emitter
    current
    25%
    20%
    35 %
    5%
    ANS : 4
    11. At the base-emitter junctions of a transistor, one finds ……………
    a reverse bias
    a wide depletion layer
    low resistance
    none of the above
    ANS : 3
    12. The input impedance of a transistor is ………….
    high
    low
    very high
    almost zero
    ANS : 2
    13. Most of the majority carriers from the emitter ………………..
    recombine in the base
    recombine in the emitter
    pass through the base region to the collector
    none of the above
    ANS :3
    14. The current IB is …………
    electron current
    hole current
    donor ion current
    acceptor ion current
    ANS : 1
    15. In a transistor ………………..
    IC = IE + IB

    IB = IC + IE

    IE = IC – IB

    IE = IC + IB

    ANS : 4
    16. The value of a of a transistor is ……….
    more than 1
    less than 1
    1
    none of the above
    ANS : 2
    17. IC = aIE + ………….
    IB
    ICEO
    ICBO
    ßIB
    ANS : 3
    18. The output impedance of a transistor is ……………..
    high
    zero
    low
    very low
    ANS : 1
    19. In a tansistor, IC = 100 mA and IE = 100.2 mA. The value of ß
    is …………
    100
    50
    about 1
    200
    ANS : 4
    20. In a transistor if ß = 100 and collector current is 10 mA, then IE
    is …………
    100 mA
    100.1 mA
    110 mA
    none of the above
    ANS : 2
    21. The relation between ß and a is …………..
    ß = 1 / (1 – a )
    ß = (1 – a ) / a
    ß = a / (1 – a )
    ß = a / (1 + a )
    ANS : 3
    22. The value of ß for a transistor is generally ………………..
    1
    less than 1
    between 20 and 500
    above 500
    ANS : 3
    23. The most commonly used transistor arrangement is ……………
    arrangement
    common emitter
    common base
    common collector
    none of the above
    ANS : 1
    24. The input impedance of a transistor connected in ……………..
    arrangement is the highest
    common emitter
    common collector
    common base
    none of the above
    ANS : 2
    25. The output impedance of a transistor connected in …………….
    arrangement is the highest
    common emitter
    common collector
    common base
    none of the above
    ANS : 3
    26. The phase difference between the input and output voltages in a
    common base arrangement is …………….
    180o
    90o
    270o
    0o
    ANS : 4
    27. The power gain in a transistor connected in …………….
    arrangement is the highest
    common emitter
    common base
    common collector
    none of the above
    ANS : 1
    28. The phase difference between the input and output voltages of a
    transistor connected in common emitter arrangement is ………………
    0o
    180o
    90o
    270o
    ANS : 2
    29. The voltage gain in a transistor connected in ……………….
    arrangement is the highest
    common base
    common collector
    common emitter
    none of the above
    ANS : 3
    30. As the temperature of a transistor goes up, the base-emitter
    resistance ……………
    decreases
    increases
    remains the same
    none of the above
    ANS : 1
    31. The voltage gain of a transistor connected in common collector
    arrangement is ………..
    equal to 1
    more than 10
    more than 100
    less than 1
    ANS : 4
    32. The phase difference between the input and output voltages of a
    transistor connected in common collector arrangement is ………………
    180o
    0o
    90o
    270o
    ANS : 2
    33. IC = ß IB + ………..
    ICBO
    IC
    ICEO
    aIE
    ANS : 3
    34. IC = [a / (1 – a )] IB + ………….
    ICEO
    ICBO
    IC
    (1 – a ) IB
    ANS : 1
    35. IC = [a / (1 – a )] IB + […….. / (1 – a )]
    ICBO
    ICEO
    IC
    IE
    ANS : 1
    36. BC 147 transistor indicates that it is made of …………..
    germanium
    silicon
    carbon
    none of the above
    ANS : 2
    37. ICEO = (………) ICBO
    ß
    1+a
    1+ß
    none of the above
    ANS : 3
    38. A transistor is connected in CB mode. If it is not connected in CE
    mode with same bias voltages, the values of IE, IB and IC will …………..
    remain the same
    increase
    decrease
    none of the above
    ANS : 1
    39. If the value of a is 0.9, then value of ß is ………..
    9
    0.9
    900
    90
    ANS : 4
    40. In a transistor, signal is transferred from a …………… circuit
    high resistance to low resistance
    low resistance to high resistance
    high resistance to high resistance
    low resistance to low resistance
    ANS : 2
    41. The arrow in the symbol of a transistor indicates the direction
    of ………….
    electron current in the emitter
    electron current in the collector
    hole current in the emitter
    donor ion current
    ANS : 3
    42. The leakage current in CE arrangement is ……………. that in CB
    arrangement
    more than
    less than
    the same as
    none of the above
    ANS : 1
    43. A heat sink is generally used with a transistor to …………
    increase the forward current
    decrease the forward current
    compensate for excessive doping
    prevent excessive temperature rise
    ANS : 4
    44. The most commonly used semiconductor in the manufacture of a
    transistor is ………….
    germanium
    silicon
    carbon
    none of the above
    ANS : 2
    45. The collector-base junction in a transistor has ……………..
    forward bias at all times
    reverse bias at all times
    low resistance
    none of the above
    ANS : 2

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