2 SC 2314

Ordering number:EN485F
NPN Epitaxial Planar Silicon Transistor
2SC2314
27MHz CB Transceiver Driver Applications
Package Dimensions
unit:mm
2009B
[2SC2314]
1 : Emitter
JEDEC : TO-126
2 : Collector
Specifications 3 : Base
Absolute Maximum Ratings at Ta = 25˚C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO RBE=150Ω 75 V
Collector-to-Emitter Voltage VCER 75 V
Collector-to-Emitter Voltage VCEO 45 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 1.0 A
Collector Current (Pulse) ICP 1.5 A
Collector Dissipation PC 750 mW
Tc=25˚C 5 W
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –55 to +150 ˚C
Electrical Characteristics at Ta = 25˚C

Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=40V, IE=0 1.0 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 1.0 µA
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 75 V
Collector-to-Emitter Breakdown Voltage V(BR)CER IC=1mA, RBE=150Ω 75 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 45 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V
* : The 2SC2314 are classified by 500mA hFE as follows : 60 D 120 100 E 200 160 F 320
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/2090MO/4147KI/1165MW, TS No.485–1/4
2SC2314
Ratings
Parameter Symbol Conditions Unit
min typ max
DC Current Gain hFE VCE=5V, IC=500mA 60* 320*
Gain-Bandwidth Product fT VCE=10V, IC=50mA 180 250 MHz
Output Capacitance Cob VCB=10V, f=1MHz 15 25 pF
Output Power PO VCC=12V, f=27MHz, Pi=35mW 1.0 1.8 W
Collector Efficiency ηc See specified test circuit. 60 %
Collector-to-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA 0.2 0.6 V
Base-to-Emitter Saturation Voltage VBE(sat) IC=500mA, IB=50mA 0.9 1.2 V
Collector Effieiency Test Circuit
No.485–2/4
2SC2314
No.485–3/4
2SC2314
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 1998. Specifications and information herein are subject
to change without notice.
PS No.485–4/4

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Ordering number:EN485F

NPN Epitaxial Planar Silicon Transistor

27MHz CB Transceiver Driver Applications

Absolute Maximum Ratings at Ta = 25˚C

Electrical Characteristics at Ta = 25˚C

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

Collector Effieiency Test Circuit

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