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    Ixtq96n20p Inchange

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    Y Automation (Jean)
    This document provides information on the IXTQ96N20P N-channel MOSFET transistor from ISC, including its key features, applications, maximum ratings, thermal characteristics, and electrical characteristics. The transistor has a maximum drain-source voltage of 200V, on-resistance of 24mΩ, and is suitable for applications such as power supplies, motor drives, and robotics.

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    Ixtq96n20p Inchange

    Uploaded by

    Y Automation (Jean)
    7 views2 pages
    This document provides information on the IXTQ96N20P N-channel MOSFET transistor from ISC, including its key features, applications, maximum ratings, thermal characteristics, and electrical characteristics. The transistor has a maximum drain-source voltage of 200V, on-resistance of 24mΩ, and is suitable for applications such as power supplies, motor drives, and robotics.

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    IXTQ96N20P-INCHANGE

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    This document provides information on the IXTQ96N20P N-channel MOSFET transistor from ISC, including its key features, applications, maximum ratings, thermal characteristics, and electrical characteristics. The transistor has a maximum drain-source voltage of 200V, on-resistance of 24mΩ, and is suitable for applications such as power supplies, motor drives, and robotics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views2 pages

    Ixtq96n20p Inchange

    Uploaded by

    Y Automation (Jean)
    This document provides information on the IXTQ96N20P N-channel MOSFET transistor from ISC, including its key features, applications, maximum ratings, thermal characteristics, and electrical characteristics. The transistor has a maximum drain-source voltage of 200V, on-resistance of 24mΩ, and is suitable for applications such as power supplies, motor drives, and robotics.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 2

    isc N-Channel MOSFET Transistor IXTQ96N20P

    ·FEATURES
    ·Drain Source Voltage-
    : VDSS= 200V(Min)
    ·Static Drain-Source On-Resistance
    : RDS(on) = 24mΩ(Max)
    ·Fast Switching
    ·100% avalanche tested
    ·Minimum Lot-to-Lot variations for robust device
    performance and reliable operation

    ·APPLICATIONS
    ·Switch-Mode and Resonant-Mode Power Supplies
    ·DC-DC Converters
    ·AC and DC Motor Drives
    ·Robotics and Servo Controls

    ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

    SYMBOL PARAMETER VALUE UNIT

    VDSS Drain-Source Voltage 200 V

    VGS Gate-Source Voltage-Continuous ±20 V

    ID Drain Current-Continuous 96 A

    IDM Drain Current-Single Plused 225 A

    PD Total Dissipation @TC=25℃ 600 W

    Tj Max. Operating Junction Temperature -55~175 ℃

    Tstg Storage Temperature -55~150 ℃

    ·THERMAL CHARACTERISTICS
    SYMBOL PARAMETER MAX UNIT

    Rth j-c Thermal Resistance, Junction to Case 0.25 ℃/W

    isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark


    isc N-Channel MOSFET Transistor IXTQ96N20P

    ·ELECTRICAL CHARACTERISTICS
    TC=25℃ unless otherwise specified

    SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT

    V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 200 V

    VGS(th) Gate Threshold Voltage VDS= VGS; ID=250uA 2.5 5 V

    RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 48A 24 mΩ

    IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA

    VDS=200V; VGS= 0 25
    IDSS Zero Gate Voltage Drain Current µA
    VDS=200V; VGS= 0;TJ=150℃ 250

    VSD Diode Forward On-voltage IF= 96A ;VGS= 0 1.5 V

    NOTICE：
    ISC reserves the rights to make changes of the content herein the datasheet at any time without
    notification. The information contained herein is presented only as a guide for the applications of
    our products.
    ISC products are intended for usage in general electronic equipment. The products are not
    designed for use in equipment which require specialized quality and/or reliability, or in equipment
    which could have applications in hazardous environments, aerospace industry, or medical
    field. Please contact us if you intend our products to be used in these special applications.
    ISC makes no warranty or guarantee regarding the suitability of its products for any particular
    purpose, nor does ISC assume any liability arising from the application or use of any products, and
    specifically disclaims any and all liability, including without limitation special, consequential or
    incidental damages.

    isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark

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