ST 13009
ST 13009
ST 13009
Features
■ Low spread of dynamic parameters
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
Applications 2
3
1
■ Switch mode power supplies
TO-220
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability. It Figure 1. Internal schematic diagram
uses a hollow emitter structure to enhance
switching speeds.
13009 L
ST13009 TO-220 Tube
13009 H
1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
1 Electrical ratings
2 Electrical characteristics
Collector-emitter
VCEO(sus) (1) sustaining voltage IC = 10 mA 400 V
(IB = 0)
IC = 4 A _ IB = 0.8 A 0.85 V
Collector-emitter IC = 5 A _ _ IB = 1 A 0.9 V
VCE(sat) (1)
saturation voltage IC = 8 A _ _ IB = 1.6 A 1.25 V
IC = 12 A _ _ IB = 3 A 2.5 V
IC = 5 A _ VCE = 5 V
Group L 15 31
hFE (1)(2) DC current gain
Group H 26 39
IC = 8 A _ _ VCE = 5 V 10 30
IC = 5 A VCC = 250 V
Inductive load
IB1 = 1 A IB2 = -2 A
ts Storage time 1.6 2.5 µs
L = 200 µH
tf Fall time 60 110 ns
see Figure 9
IC = 5 A VCC = 125 V
Inductive load
IB1 = - IB2 = 1.6 A
ts Storage time 2.3 µs
L = 200 µH tc = 125 °C
tf Fall time 110 ns
see Figure 9
1. Pulsed duration = 300 µs, duty cycle ≤2 %
2. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to
ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details.
3 Test circuit
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40 4.60 0.173 0.181
b 0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c 0.48 0.70 0.019 0.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F 1.23 1.32 0.048 0.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L 13 14 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L30 28.90 1.137
∅P 3.75 3.85 0.147 0.151
Q 2.65 2.95 0.104 0.116
5 Revision history
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