Pee Exp-3
Pee Exp-3
Pee Exp-3
Experiment No: 03
Aim: Simulate Circuit of CE Amplifier and compare three configurations on the basis of
voltage gain (AV), Input Impedance (Ri ), Output Impedance(Ro) and Current gain(AI)
Objective:
1. To simulate the circuit of CE Amplifier using MULTISIM simulation software.
2. To measure the voltage gain (AV), current gain (AI), input resistance (Ri), output
resistance (Ro) and bandwidth (BW) of the CE, CB and CC amplifier.
3. To observe input and output waveforms and phase difference in each
configuration.
Theory:
Amplification is a process of increasing strength of the input signal (voltage, current,
power) using amplifier without change in frequency and phase characteristics of input
signal. Bipolar junction transistor (BJT) can be used as amplifier and these amplifiers have
multiple applications. Ratio of output signal to input signal is called gain (voltage, current,
power) of the amplifier. Performance of amplifier can be measured using four parameters
viz. Gain, Input Impedance, Output Impedance, and bandwidth. BJT has following three
basic configurations:
• Common Emitter Configuration
• Common Base Configuration
• Common Collector Configuration
V O − V O' '
Ro = × R ' ' ……… (1.3) ) here R’’ = 1 KΩ
V O' '
I OUT
Amplifier Current Gain A I = = IC/ IB……………….. (1.4)
I¿
Procedure:
To verify all the three configurations component values selected are given in table 1. Make
use of BC 547 BJT to build the circuits of CE amplifiers in MULTISIM software.
A] To find the parameters of CE Amplifier
1. Build the circuit of CE amplifier as shown in Figure 4 using MULTISIM
simulation software. Carry out DC analysis of above amplifier and note down
VCEQ, VBEQ , ICQ and IBQ.
2. Apply sinusoidal input signal of 1kHz and adjust its amplitude in mV so as to get
maximum undistorted output.
3. Measure the o/p (Vo) on CRO. Observe input and output waveform
simultaneously to see phase difference.
4. Apply i/p through R’ (in series) and measure the o/p voltage (Vo’).
5. Apply i/p without R’. Connect the R’’ (in parallel) across the o/p. Measure the o/p
voltage (VO’’).
6. Calculate voltage gain using equation1.1
7. Calculate the Ri and Ro using equations 1.2 and 1.3.
8. Verify voltage gain ( AV ¿ , Current gain ( A I ¿, input resistance ( Ri ), output
resistance ( Ro ¿ theoretically using h-parameter model.
Figure 4: Common Emitter Amplifier to find various parameters
Observation Table:
Table 2: DC Analysis
Simulated
Parameter Circuit
Parameters
1 VCEQ 6V
2 VBEQ 0.7 V
3 IBQ 15 µA
4 ICQ 1.5 mA
Parameter CE Amplifier
4 Ri 1.7 kΩ
5 Ro 292 Ω
7 AI = Ic/ IB 102.25 dB
Conclusion:
The emitter-bias configuration has the highest current gain and a moderate
voltage gain. It has a lower input impedance compared to the base-bias
configuration but a higher output impedance.
In terms of output signal levels, adding an external resistor R' can decrease
the output voltage level (Vo') compared to the configuration without R', but
can also decrease the effect of negative feedback on the circuit. The use of a
bypass capacitor C in parallel with RE can increase the output voltage level
(Vo'') but may also introduce distortion to the output signal.