SOT223 NPN SILICON PLANAR

FZT651 HIGH PERFORMANCE TRANSISTORS FZT651

ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * 60 Volt VCEO C
* 3 Amp continuous current
0.6

* Low saturation voltage

0.5

225 E
0.4 COMPLEMENTARY TYPE – FZT751
IC/IB=10
C
- (Volts)

175

- Gain
0.3 VCE=2V
PARTMARKING DETAIL – FZT651 B
125

ABSOLUTE MAXIMUM RATINGS.

0.2

h
PARAMETER SYMBOL VALUE UNIT
V

0.1 75

0
0.0001 0.001 0.01 0.1 1 10 0 Collector-Base Voltage VCBO 80 V
0.01 0.1 1 10

Collector-Emitter Voltage VCEO 60 V

IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO 5 V
VCE(sat) v IC hFE v IC Peak Pulse Current ICM 6 A
Continuous Collector Current IC 3 A
1.4
Power Dissipation at Tamb=25°C Ptot 2 W
1.2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.2

1.0

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- (Volts)

- (Volts)

1.0 VCE=2V
IC/IB=10

0.8
Collector-Base V(BR)CBO 80 V IC=100µA
0.8
Breakdown Voltage
Collector-Emitter V(BR)CEO 60 V IC=10mA*
V

Breakdown Voltage
0.6
V

0.6
Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA
Voltage
0.4
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10

Collector Cut-Off Current ICBO 0.1 µA VCB=60V

IC - Collector Current (Amps) IC - Collector Current (Amps) 10 µA VCB=60V,Tamb=100°C
VBE(sat) v IC Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
VBE(on) v IC
Collector-Emitter VCE(sat) 0.12 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.43 0.6 V IC=3A, IB=300mA*
10 Single Pulse Test at T amb =25°C td Base-Emitter VBE(sat) 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
tr IB1=IB2=IC/10
tf ts

Base-Emitter VBE(on) 0.8 1 V IC=1A, VCE =2V*

ns ns

140 1400

1 120 1200
Turn-On Voltage
Static Forward Current hFE 70 200 IC=50mA, VCE =2V*
ts
Switching time

100 1000

td Transfer Ratio 100 200 300 IC=500mA, VCE =2V*

80 170 IC=1A, VCE =2V*
80 800

DC
0.1 1s
100ms
60 600
tf
40 80 IC=2A, VCE =2V*
10ms 40 400

Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V

tr

1ms
100µs 20 200

0
f=100MHz
0

0.01
0.1 1 10 100
0.01 0.1 1
Switching Times t on 45 ns IC=500mA, VCC =10V
t off 800 ns IB1=IB2=50mA
VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps)
Output Capacitance Cobo 30 pF VCB =10V, f=1MHz
Safe Operating Area Switching Speeds *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device

3 - 208 3 - 207
 SOT223 NPN SILICON PLANAR
FZT651 HIGH PERFORMANCE TRANSISTORS FZT651
ISSUE 2 – FEBRUARY 1995
FEATURES
TYPICAL CHARACTERISTICS * 60 Volt VCEO C
* 3 Amp continuous current
0.6

* Low saturation voltage

0.5

225 E
0.4 COMPLEMENTARY TYPE – FZT751
IC/IB=10
C
- (Volts)

175

- Gain
0.3 VCE=2V
PARTMARKING DETAIL – FZT651 B
125

ABSOLUTE MAXIMUM RATINGS.

0.2

h
PARAMETER SYMBOL VALUE UNIT
V

0.1 75

0
0.0001 0.001 0.01 0.1 1 10 0 Collector-Base Voltage VCBO 80 V
0.01 0.1 1 10

Collector-Emitter Voltage VCEO 60 V

IC - Collector Current (Amps) IC - Collector Current (Amps)
Emitter-Base Voltage VEBO 5 V
VCE(sat) v IC hFE v IC Peak Pulse Current ICM 6 A
Continuous Collector Current IC 3 A
1.4
Power Dissipation at Tamb=25°C Ptot 2 W
1.2 Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.2

1.0

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

- (Volts)

- (Volts)

1.0 VCE=2V
IC/IB=10

0.8
Collector-Base V(BR)CBO 80 V IC=100µA
0.8
Breakdown Voltage
Collector-Emitter V(BR)CEO 60 V IC=10mA*
V

Breakdown Voltage
0.6
V

0.6
Emitter-Base Breakdown V(BR)EBO 5 V IE=100µA
Voltage
0.4
0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10

Collector Cut-Off Current ICBO 0.1 µA VCB=60V

IC - Collector Current (Amps) IC - Collector Current (Amps) 10 µA VCB=60V,Tamb=100°C
VBE(sat) v IC Emitter Cut-Off Current IEBO 0.1 µA VEB=4V
VBE(on) v IC
Collector-Emitter VCE(sat) 0.12 0.3 V IC=1A, IB=100mA*
Saturation Voltage 0.43 0.6 V IC=3A, IB=300mA*
10 Single Pulse Test at T amb =25°C td Base-Emitter VBE(sat) 0.9 1.25 V IC=1A, IB=100mA*
Saturation Voltage
tr IB1=IB2=IC/10
tf ts

Base-Emitter VBE(on) 0.8 1 V IC=1A, VCE =2V*

ns ns

140 1400

1 120 1200
Turn-On Voltage
Static Forward Current hFE 70 200 IC=50mA, VCE =2V*
ts
Switching time

100 1000

td Transfer Ratio 100 200 300 IC=500mA, VCE =2V*

80 170 IC=1A, VCE =2V*
80 800

DC
0.1 1s
100ms
60 600
tf
40 80 IC=2A, VCE =2V*
10ms 40 400

Transition Frequency fT 140 175 MHz IC=100mA, VCE =5V

tr

1ms
100µs 20 200

0
f=100MHz
0

0.01
0.1 1 10 100
0.01 0.1 1
Switching Times t on 45 ns IC=500mA, VCC =10V
t off 800 ns IB1=IB2=50mA
VCE - Collector Emitter Voltage (V) IC - Collector Current (Amps)
Output Capacitance Cobo 30 pF VCB =10V, f=1MHz
Safe Operating Area Switching Speeds *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for this device

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