5.2.6 Semiconductor Temperature Sensors - DSPE
5.2.6 Semiconductor Temperature Sensors - DSPE
5.2.6 Semiconductor Temperature Sensors - DSPE
Home Knowledge Thermomechanics Chapter 5: Measurement 5.2 Contact sensors 5.2.6 Semiconductor
temperature sensors
0 Introduction
5.2.6 Semiconductor
1 Basics
temperature sensors
2 In depth
3 Thermomechanical
The semiconductor (or IC for integrated circuit) temperature sensor is an electronic design
device fabricated in a similar way to other modern electronic semiconductor components
such as microprocessors. Typically hundreds or thousands of devices are formed on thin 4 Thermo-mechanical
silicon wafers. Before the wafer is scribed and cut into individual chips, they are usually modeling
laser trimmed.
These sensors share a number of characteristics – linear outputs, relatively small size,
limited temperature range (-40 to +120°C typical), low cost, good accuracy if calibrated
but also poor interchangeability. Often the semiconductor temperature sensors are not
well designed thermally, with the semiconductor chip not always in good thermal
contact with an outside surface. Some devices are inclined to oscillate unless
precautions are taken. Provided the limitations of the semiconductor temperature
sensors are understood, they can be used effectively in many applications.
The most popular semiconductor temperature sensors are based on the fundamental
temperature and current characteristics of the transistor. If two identical transistors are
operated at different but constant collector current densities, then the difference in their
base-emitter voltages is proportional to the absolute temperature of the transistors. This
voltage difference is then converted to a single ended voltage or a current. An offset may
be applied to convert the signal from absolute temperature to Celsius or Fahrenheit.
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The bias current should be held as constant as possible – using constant current source,
or a resistor from a stable voltage source.
Without calibration the initial error is likely to be too large – in the order of ±30°C – the
largest of all the contact type temperature sensors. This initial error is greatly reduced if
sensor grade parts are used.
One advantage of the diode as a temperature sensor is that it can be electrically robust –
tolerant to voltage spikes induced by lightning strike. This is particularly true if power
diodes (e.g. the common 1N4004) are used and a second back to back diode is used to
limit power dissipation during high peak currents.
The transistor sensor is used in diode mode by connecting the base and collector
together. If this is not done, the sensor is wired between base and emitter and the
excitation current reduced by a factor of about 100. The result is a very low power,
sensitive and linear sensor. The simplicity and performance of the sensor is under
valued.
To improve the performance of the diode as a temperature sensor, two diode voltages
(V1 and V2) can be measured at different currents (I1 and I2), typically selected to be
about 1:10 ratio. The absolute temperature can be calculated from the equation:
V 1–V 2
T =
5 I1
8.7248×10 ⋅ ln( )
I2
The result is in Kelvins (K). This is the method employed by most integrated circuit
temperatures sensors and explains why some output a signal proportional to absolute
temperature.
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Chapter 5
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5.2.5 RESISTANCE THERMOMETERS NTC 5.2.7 OTHER TYPES OF CONTACT
SENSORS
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