Zener Diode

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The Zener Diode

Ordinary silicon diodes block any current through them when they are reverse biased, and are
damaged when the reverse voltage is too high. Therefore, these diodes are never intentionally
operated in the breakdown region.
Zener diodes are a modified form of PN-junction silicon diode used extensively for voltage
regulation. The P-type and N-type silicon used is doped more heavily than a standard PN-junction
diode. They are specially designed to operate in the breakdown region without failure. For this
reason, Zener diodes are sometimes referred to as breakdown diodes.
Zener diodes are the backbone of voltage regulators, and circuits that keep the load voltage almost
constant despite large changes in line voltage and load resistance.
The following figures show the schematic symbols of a zener diode. In either symbol, the lines
resemble a “Z”, which stands for “Zener”.

Zener Diode Working


A zener diode can operate in any of three regions: forward, leakage, and breakdown. Let’s
understand this through the I-V characteristics of a zener diode.

1
Forward Bias Region
When forward-biased, Zener diodes behave much the same as an ordinary silicon diodes and
start conducting at around 0.7V

Leakage Region
The leakage region exists between zero current and breakdown.
In the leakage region, a small reverse current flows through the diode. This reverse current is caused
by the thermally produced minority carriers.

2
Breakdown Region
If we continue increasing the reverse voltage, we will eventually reach the so-called Zener
voltage VZ of the diode.

At this point, a process called Avalanche Breakdown occurs in the semiconductor depletion layer
and the diode starts conducting heavily in the reverse direction.

We can see from the curve that the breakdown has a very sharp knee, followed by an almost vertical
increase in current. Note that the voltage across the zener diode is almost constant and
approximately equal to VZ over most of the breakdown region.

The curve also shows the maximum reverse current I Z(Max). As long as the reverse current is less
than IZ(Max), the diode operates within its safe range. If the current exceeds I Z(Max), the diode will
be destroyed.

Zener Effect: The Zener effect is a type of electrical breakdown that occurs in a reverse-biased
PN junction when the electric field enables tunnelling of electrons from the valence to the
conduction band of a semiconductor, leading to a large number of free minority carriers which
suddenly increase the reverse current. Thereby, increasing the power very high resulting in very
high heat dissipation. This will ultimately burn the diode.

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