Medium Voltage Cable Shielding and Grounding
Medium Voltage Cable Shielding and Grounding
Medium Voltage Cable Shielding and Grounding
by
H e r b e r t C. Doepken, Jr., Robert S c h o o l c r a f t and O l i n W i l l i s
Cablec C o r p o r a t i o n
P.O. Box 188
Marion, I N 46952
Introduction
Conductor Insulation
S t a t e o f t h e a r t cables g e n e r a l l y use a
free-stripping material applied i n a t r i p l e
e x t r u s i o n process w i t h a l l t h r e e l a y e r s c r o s s -
l i n k e d i n a C V i n a s i n g l e pass. The advantages
o f t r i p l e e x t r u s i o n a r e smoother and c l e a n e r
i n t e r f a c e s between t h e i n s u l a t i o n and t h e i n s u l a -
t i o n s h i e l d , and a c o n s i s t e n t s t r i p p i n g f o r c e .
The c o n s i s t e n t s t r i p p i n g f o r c e makes i n s t a l 1a t i o n F i g u r e 2-a. Short-circuited Shields
e a s i e r and prevents a l o o s e i n s u l a t i o n s h i e l d o r
a s o l i d l y bonded i n s u l a t i o n s h i e l d .
Over t h e i n s u l a t i o n s h i e l d , many d i f -
f e r e n t c o n s t r u c t i o n s a r e p o s s i b l e depending upon
t h e u l t i m a t e use and customer preference. Some
o f t h e common c o n s t r u c t i o n s i n c l u d e : c o r r u g a t e d F i g u r e 2-b. Open-Circuited S h i e l d s
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The mathematics f o r t h e most common C l e a r l y , as Q increases, t h e t o t a l l o s s e s o f t h e
i n s t a l l a t i o n mode o f t h r e e phases i n a f l a t con- c a b l e (and t h e conductor temperature) increase.
f i g u r a t i o n i s p a r t i c u l a r l y complex and here o n l y Alternatively, i f the cable i s operating a t the
t h e l e s s common ( b u t m a t h e m a t i c a l l y e a s i e r maximum conductor temperature, i n c r e a s i n g Q w i l l
because o f symnetry) e q u i l a t e r a l i n s t a l l a t i o n r e q u i r e r e d u c i n g I.
mode w i l l be considered (see F i g u r e 3). I f S i s
t h e c a b l e c e n t e r t o c e n t e r spacing and C i s t h e One way t o reduce t h e s h i e l d losses i s t o
mean s h i e l d r a d i u s ( b o t h i n t h e same u n i t s ) and ground each s h i e l d o n l y a t one p o i n t or t o use
i f R i s t h e conductor r e s i s t a n c e and r i s t h e " o p e n - c i r c u i t e d " s h i e l d s (see F i g u r e 2 ) . I n t h i s
s h i e l d r e s i s t a n c e ( b o t h i n ohms p e r 1000 f e e t ) case, t h e r e i s a l o n g i t u d i n a l v o l t a g e b u i l d u p which
t h e n t h e r a t i o ( Q ) o f one phase s h i e l d l o s s i s I X f o r an e q u i l a t e r a l c o n f i g u r a t i o n . I f I i s
d i v i d e d by one phase conductor l o s s ( t h e same f o r about 300 amperes, t h e v o l t a g e induced i s
each phase because o f symmetry) i s (300)(.005) = 16.5 v o l t s p e r 1000 f e e t . It i s i m -
Q = rX2/R(r2 + X 2 ) where X = 0.023 I n (S/C) where p o r t a n t t o n o t e t h a t t h e r e w i l l s t i l l be s h i e l d
X i s a l s o i n ohms per 1000 f e e t . By d i f f e r e n - l o s s e s i n t h e s h i e l d s due t o c u r r e n t s c i r c u l a t i n g
t i a t i n g Q w i t h respect t o r and s e t t i n g dQ/dr = w i t h i n each s h i e l d even though t h e n e t c u r r e n t i n
0, Q i s found t o be maximum when r = X. each s h i e l d i s zero. General p r a c t i c e i s t o ground
t h e c a b l e a t each s p l i c e and each t e r m i n a l .
S h i e l d Terminations
When making a c a b l e t e r m i n a t i o n or a
s p l i c e between two c a b l e ends, t h e v a r i o u s s h i e l d s
must be p r o p e r l y handled. The most c r i t i c a l area
i s where t h e i n s u l a t i o n s h i e l d i s removed. F i g u r e
4-a shows a f i e l d p l o t o f t h e e q u i p o t e n t i a l l i n e s
and e l e c t r i c f i e l d around a c a b l e w i t h j u s t t h e
i n s u l a t i o n s h i e l d removed. T h i s leaves a v e r y h i g h
e l e c t r i c f i e l d i n t h e a i r adjacent t o t h e i n s u l a t i o n
and i n s u l a t i o n s h i e l d (Region A) which can cause
i o n i z a t i o n o f t h e a i r because o f t h e r e l a t i v e l y low
d i e l e c t r i c s t r e n g t h o f a i r compared t o EP or XLPE.
T h i s i o n i z a t i o n can e v e n t u a l l y cause t r a c k i n g on t h e
F i g u r e 3-a. Equilateral Installation s u r f a c e o f t h e c a b l e i n s u l a t i o n and e v e n t u a l l y a
f a i l u r e . There a r e s e v e r a l ways t o reduce t h i s
f i e l d , b u t t h e most common ways a r e w i t h t h e use o f
a s t r e s s cone ( F i g u r e 4-b) o r a h i g h d i e l e c t r i c con-
s t a n t l a y e r placed over t h e c r i t i c a l r e g i o n ( F i g u r e
4-c). I n t h e case o f F i g u r e 4-b, t h e d i e l e c t r i c
s t r e n g t h o f t h e s t r e s s cone m a t e r i a l i s h i g h e r than
a i r so no i o n i z a t i o n takes place. I n t h e case of
F i g u r e 4-c, t h e h i g h d i e l e c t r i c c o n s t a n t m a t e r i a l
reduces t h e e l e c t r i c f i e l d i n t h e a i r t o below t h e
ionization level.
F i g u r e 3-b. Flat Installation
Q = .688. Region A
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U U
-
\ \\
S t r e s s Cone
F i g u r e 4-b
'High Dielectric
Constant Layer
F i g u r e 4-c
References
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