IPS70R900P7S

MOSFET
700VCoolMOSªP7PowerTransistor IPAKSL

CoolMOS™isarevolutionarytechnologyforhighvoltagepower tab

MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.
ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost
sensitiveapplicationsinconsumermarketssuchascharger,adapter,
lighting,TV,etc.
ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction
MOSFET,combinedwithanexcellentprice/performanceratioandstateof
theartease-of-uselevel.Thetechnologymeetshighestefficiency
standardsandsupportshighpowerdensity,enablingcustomersgoing
towardsveryslimdesigns.

Drain
Features Pin 2, Tab

•ExtremelylowlossesduetoverylowFOMRDS(on)*QgandRDS(on)*Eoss
•Excellentthermalbehavior Gate
Pin 1
•IntegratedESDprotectiondiode
•Lowswitchinglosses(Eoss)
•Productvalidationacc.JEDECStandard Source
Pin 3

Benefits
•Costcompetitivetechnology
•Lowertemperature
•HighESDruggedness
•Enablesefficiencygainsathigherswitchingfrequencies
•Enableshighpowerdensitydesignsandsmallformfactors

Potentialapplications
RecommendedforFlybacktopologiesforexampleusedinChargers,
Adapters,LightingApplications,etc.

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParameters
Parameter Value Unit
VDS @ Tj=25°C 700 V
RDS(on),max 0.9 Ω
Qg,typ 6.8 nC
ID,pulse 12.8 A
Eoss @ 400V 0.9 µJ
V(GS)th,typ 3 V
ESD class (HBM) 1C

Type/OrderingCode Package Marking RelatedLinks

IPS70R900P7S PG-TO 251-3 70S900P7 see Appendix A

Final Data Sheet 1 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Final Data Sheet 2 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

1Maximumratings
atTj=25°C,unlessotherwisespecified

Table2Maximumratings
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
- - 6.0 TC = 20°C
Continuous drain current1) ID A
- - 3.5 TC = 100°C
Pulsed drain current2) ID,pulse - - 12.8 A TC=25°C
Application (Flyback) relevant measured with standard leakage
IAS - - 3.6 A
avalanche current, single pulse3) inductance of transformer of 5µH
MOSFET dv/dt ruggedness dv/dt - - 100 V/ns VDS=0...400V
-16 - 16 static;
Gate source voltage VGS V
-30 - 30 AC (f>1 Hz)
Power dissipation Ptot - - 30.5 W TC=25°C
Operating and storage temperature Tj,Tstg -40 - 150 °C -
Continuous diode forward current IS - - 4.1 A TC=25°C
Diode pulse current 2)
IS,pulse - - 12.8 A TC = 25°C
Reverse diode dv/dt 4)
dv/dt - - 1 V/ns VDS=0...400V,ISD<=IS,Tj=25°C
Maximum diode commutation speed 4)
dif/dt - - 50 A/µs VDS=0...400V,ISD<=IS,Tj=25°C
Insulation withstand voltage VISO - - n.a. V Vrms, TC=25°C, t=1min

2Thermalcharacteristics

Table3Thermalcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Thermal resistance, junction RthJC - - 4.1 °C/W -
Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded
Thermal resistance, junction - ambient
RthJA - - - °C/W n.a.
for SMD version
Soldering temperature, wavesoldering
Tsold - - 260 °C 1.6 mm (0.063 in.) from case for 10s
only allowed at leads

1)
Limited by Tj max. Tj = 20°C. Maximum duty cycle D=0.5
2)
Pulse width tp limited by Tj,max
3)
Proven during verification test. For explanation please read AN - CoolMOSTM 700V P7.
4)
VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG
Final Data Sheet 3 Rev.2.1,2018-02-13
 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

3Electricalcharacteristics

Table4Staticcharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Drain-source breakdown voltage V(BR)DSS 700 - - V VGS=0V,ID=1mA
Gate threshold voltage V(GS)th 2.50 3 3.50 V VDS=VGS,ID=0.06mA
- - 1 VDS=700V,VGS=0V,Tj=25°C
Zero gate voltage drain current IDSS µA
- 10 - VDS=700V,VGS=0V,Tj=150°C
Gate-source leakage current incl. Zener
IGSS - - 1 µA VGS=20V,VDS=0V
diode
- 0.74 0.90 VGS=10V,ID=1.1A,Tj=25°C
Drain-source on-state resistance RDS(on) Ω
- 1.53 - VGS=10V,ID=1.1A,Tj=150°C
Gate resistance RG - 1.6 - Ω f=1MHz,opendrain

Table5Dynamiccharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Input capacitance Ciss - 211 - pF VGS=0V,VDS=400V,f=250kHz
Output capacitance Coss - 5 - pF VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
Co(er) - 13 - pF VGS=0V,VDS=0...400V
related1)
Effective output capacitance, time
Co(tr) - 177 - pF ID=constant,VGS=0V,VDS=0...400V
related2)
VDD=400V,VGS=13V,ID=0.9A,
Turn-on delay time td(on) - 12 - ns
RG=5.3Ω
VDD=400V,VGS=13V,ID=0.9A,
Rise time tr - 4.7 - ns
RG=5.3Ω
VDD=400V,VGS=13V,ID=0.9A,
Turn-off delay time td(off) - 58 - ns
RG=5.3Ω
VDD=400V,VGS=13V,ID=0.9A,
Fall time tf - 31 - ns
RG=5.3Ω

Table6Gatechargecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Gate to source charge Qgs - 0.9 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate to drain charge Qgd - 2.6 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate charge total Qg - 6.8 - nC VDD=400V,ID=0.9A,VGS=0to10V
Gate plateau voltage Vplateau - 4.4 - V VDD=400V,ID=0.9A,VGS=0to10V

1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet 4 Rev.2.1,2018-02-13
 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

Table7Reversediodecharacteristics
Values
Parameter Symbol Unit Note/TestCondition
Min. Typ. Max.
Diode forward voltage VSD - 0.9 - V VGS=0V,IF=1.4A,Tj=25°C
Reverse recovery time trr - 160 - ns VR=400V,IF=0.9A,diF/dt=50A/µs
Reverse recovery charge Qrr - 0.5 - µC VR=400V,IF=0.9A,diF/dt=50A/µs
Peak reverse recovery current Irrm - 7 - A VR=400V,IF=0.9A,diF/dt=50A/µs

Final Data Sheet 5 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation Diagram2:Safeoperatingarea
40 102

35
1 µs
101 10 µs
30
100 µs

25
100
1 ms
Ptot[W]

ID[A]
20
10 ms
10-1
15
DC

10
10-2

0 10-3
0 25 50 75 100 125 150 100 101 102 103
TC[°C] VDS[V]
Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance
2
10 101

101 1 µs
10 µs
0.5
100 µs
100
0.2
ZthJC[K/W]

1 ms
ID[A]

100
0.1
10 ms 0.05
10-1
0.02
DC
0.01
single pulse
10-2

10-3 10-1
100 101 102 103 10-5 10-4 10-3 10-2 10-1
VDS[V] tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp ZthJC=f(tP);parameter:D=tp/T

Final Data Sheet 6 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics
14 10
20 V 20 V
10 V 10 V
8V 9
8V
12
7V 8 7V

10 7 6V
6V
5.5 V
6
8
ID[A]

ID[A]
5

6 5.5 V
4 5V

4 3
5V
4.5 V
2
2
4.5 V
1

0 0
0 5 10 15 20 0 5 10 15 20
VDS[V] VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance
6 2.00

1.80

5
5V 5.5 V 6V 6.5 V 1.60

1.40
4
98%
1.20
RDS(on)[Ω]

RDS(on)[Ω]

3 1.00
typ
7V
0.80
10 V
2
0.60

0.40
1

0.20

0 0.00
0 5 10 15 -50 -25 0 25 50 75 100 125 150
ID[A] Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS RDS(on)=f(Tj);ID=1.1A;VGS=10V

Final Data Sheet 7 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge
14 10

9
25 °C
12
8

10 7 120 V

6 400 V
8

VGS[V]
ID[A]

150 °C
5

6
4

4 3

2
2
1

0 0
0 2 4 6 8 10 12 0 2 4 6 8
VGS[V] Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=0.9Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode Diagram13:Drain-sourcebreakdownvoltage
2
10 840
25 °C
125 °C 820

800

780

101 760

740
VBR(DSS)[V]
IF[A]

720

700

100 680

660

640

620

10-1 600
0.0 0.5 1.0 1.5 2.0 -75 -50 -25 0 25 50 75 100 125 150 175
VSD[V] Tj[°C]
IF=f(VSD);parameter:Tj VBR(DSS)=f(Tj);ID=1mA

Final Data Sheet 8 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

Diagram14:Typ.capacitances Diagram15:Typ.Cossstoredenergy
4
10 2.00

1.80

103 1.60

Ciss 1.40

102 1.20

Eoss[µJ]
C[pF]

1.00

101 0.80
Coss

0.60

100 Crss 0.40

0.20

10-1 0.00
0 100 200 300 400 500 0 100 200 300 400 500 600 700
VDS[V] VDS[V]
C=f(VDS);VGS=0V;f=250kHz Eoss=f(VDS)

Final Data Sheet 9 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

5TestCircuits

Table8Diodecharacteristics
Test circuit for diode characteristics Diode recovery waveform

Rg1

VDS

Rg 2

IF
Rg1 = Rg 2

Table9Switchingtimes
Switching times test circuit for inductive load Switching times waveform

VDS
90%

VDS
VGS 10%
VGS
td(on) tr td(off) tf

ton toff

Table10Unclampedinductiveload
Unclamped inductive load test circuit Unclamped inductive waveform

V(BR)DS
ID VDS

VDS VDS
ID

Final Data Sheet 10 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

6PackageOutlines

DOCUMENT NO.
Z8B00181052
MILLIMETERS INCHES
DIM
MIN MAX MIN MAX SCALE 0
A 2.20 2.40 0.087 0.094
A1 0.90 1.14 0.035 0.045
2.0
b 0.64 0.89 0.025 0.035
b2 0.65 1.15 0.026 0.045 0 2.0
b4 5.20 5.50 0.205 0.217 4mm
c 0.46 0.60 0.018 0.024
c2 0.46 0.60 0.018 0.024
EUROPEAN PROJECTION
D 5.98 6.22 0.235 0.245
D1 5.00 5.60 0.197 0.220
E 6.35 6.73 0.250 0.265
E1 4.63 5.21 0.182 0.205
e 2.29 0.090
e1 4.57 0.180 ISSUE DATE
N 3 3 06-04-2016
L 3.30 3.60 0.130 0.142
L1 0.85 1.25 0.033 0.049 REVISION
L2 0.88 1.28 0.035 0.050 01

Figure1OutlinePG-TO251-3,dimensionsinmm/inches

Final Data Sheet 11 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

7AppendixA

Table11RelatedLinks
• IFXCoolMOSªP7Webpage:www.infineon.com

• IFXDesigntools:www.infineon.com

Final Data Sheet 12 Rev.2.1,2018-02-13

 700VCoolMOSªP7PowerTransistor
IPS70R900P7S

RevisionHistory
IPS70R900P7S

Revision:2018-02-13,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2016-11-24 Release of final version
2.1 2018-02-13 Corrected front page text

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TrademarksupdatedAugust2015

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Final Data Sheet 13 Rev.2.1,2018-02-13