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    Fpe (22326)

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    pratik PT
    The document contains 20 multiple choice questions from two units about power electronics components and devices. It tests knowledge about the full forms and characteristics of components like IGBT, transistors, SCRs, and thyristors. Key topics covered include the terminals and operation of transistors, properties of SCRs like their static V-I curve and turn-off mechanism, and definitions of concepts like voltage surge and rise time.

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    Fpe (22326)

    Uploaded by

    pratik PT
    133 views4 pages
    The document contains 20 multiple choice questions from two units about power electronics components and devices. It tests knowledge about the full forms and characteristics of components like IGBT, transistors, SCRs, and thyristors. Key topics covered include the terminals and operation of transistors, properties of SCRs like their static V-I curve and turn-off mechanism, and definitions of concepts like voltage surge and rise time.

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    Diploma mcq msbte

    Original Title

    FPE (22326)

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    The document contains 20 multiple choice questions from two units about power electronics components and devices. It tests knowledge about the full forms and characteristics of components like IGBT, transistors, SCRs, and thyristors. Key topics covered include the terminals and operation of transistors, properties of SCRs like their static V-I curve and turn-off mechanism, and definitions of concepts like voltage surge and rise time.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    133 views4 pages

    Fpe (22326)

    Uploaded by

    pratik PT
    The document contains 20 multiple choice questions from two units about power electronics components and devices. It tests knowledge about the full forms and characteristics of components like IGBT, transistors, SCRs, and thyristors. Key topics covered include the terminals and operation of transistors, properties of SCRs like their static V-I curve and turn-off mechanism, and definitions of concepts like voltage surge and rise time.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 4

    FPE (22326)

    Important questions unit 1 & unit 2

    1) The full form of IGBT is:-


    a) Insulated Gate Bipolar Transistor
    b) Isolated Gate bipolar transistor
    c) Indirect Gate Bijunction Transistor
    d) Inverse Gate Bipolar Transistor

    Answer: a
    2) Power electronics is the combination of----
    a) Power, energy, current
    b) Power, electronics, control
    c) Energy, work, charge
    d) power, current, voltage
    Answer: b
    3) Following is the power electronic device
    a) Resistor
    b) capacitor
    c) inductor
    d) SCR

    Answer: d
    4) 3 terminals of Transistor are
    a) anode, cathode, gate
    b) drain, gate, source
    c) collector, base, emitter
    d) none of above
    Answer: c

    5) In a pnp transistor, the current carriers are ………….


    1. acceptor ions
    2. donor ions
    3. free electrons
    4. holes answer:-d

    6) A transistor is a …………… operated device


    current
    voltage
    both voltage and current
    none of the above answer:-a
    7) At the base-emitter junctions of a transistor, one finds ……………
    a reverse bias
    a wide depletion layer
    low resistance
    none of the above answer:-c

    8) The voltage gain of a transistor connected in common collector arrangement is ………..


    equal to 1
    more than 10
    more than 100
    less than 1 answer:-d

    9) The GTO can be turned off


    a) by a positive gate pulse
    b) by a negative gate pulse
    c) by a negative anode-cathode voltage
    d) by removing the gate pulse answer:-b

    10) he anode current is ideally limited by the


    a) gate pulse amplitude
    b) internal impedance of the device
    c) load Impedance
    d) gate circuit impedance answer:-c

    UNIT-02

    11) The full form of SCR is


    A
    Semiconducting Control Rectifier
    .

    B. Silicon Controlled Rectifier

    C
    Semiconducting Capapcitive Resistor
    .

    D
    None of the above
    .
    Answer:b
    12) A thyristor (SCR) is a
    a) P-N-P device
    b) N-P-N device
    c) P-N-P-N device
    d) P-N device
    Answer:- c

    13) Which terminal does not belong to the SCR?


    a) Anode
    b) Gate
    c) Cathode
    d) Base
    Answer: d
    14) The static V-I curve for the SCR is plotted for
    a) Ia (anode current) vs Ig (gate current), Va (anode – cathode voltage) as a parameter
    b) Ia vs Va with Ig as a parameter
    c) Va vs Ig with Ia as a parameter
    d) Ig vs Vg with Ia as a parameter

    Answer: b
    15) An SCR behaves as a ……………. switch
    A. Unidirectional
    B. Bidirectional
    C. Mechanical
    D. None of the above
    Answer: a
    16) An SCR is made of ………….
    a) Germanium
    b) Silicon
    c) Carbon
    d) None of the above

    Answer: b
    17) An SCR combines the features of …………..
    A rectifier and resistance
    A rectifier and transistor
    A rectifier and capacitor
    None of the above

    Answer: b
    18) An SCR is turned off by …………….
    Reducing anode voltage to zero
    Reducing gate voltage to zero
    Reverse biasing the gate
    None of the above

    Answer: a
    19) What is the meaning of voltage surge?
    (A) Instant increase in voltage
    (B) Instant decrease in voltage
    (C) Both A and B
    (D) None of above
    Answer:- a
    20) Time required for voltage to reach peak value from zero is called
    (A) Rise time
    (B) Trail time
    (C) Half time
    (D) Total time
    Answer:-a

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