AC-DC Book of Knowledge by RECOM
AC-DC Book of Knowledge by RECOM
AC-DC Book of Knowledge by RECOM
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AC/DC BOOK OF
KNOWLEDGE
Practical tips for the User
Second Edition
©2019 All rights RECOM Engineering GmbH & Co.KG, Austria (hereafter RECOM)
The contents of this book or excerpts thereof may not be reproduced, duplicated or distributed
in any form without the written permission of RECOM.
The disclosure of the information contained in this book is correct to the best of the knowledge
of the author, but no responsibility can be accepted for any mistakes, omissions or typograph-
ical errors. The diagrams indicate typical applications and are not necessarily complete.
1
With thanks to my colleagues at RECOM for their advice and help with proof reading:
Konrad Berger, Matthew Dauterive, Stanislav Suchovsky, Markus Stöger, Alois Taranetz and
Wolfgang Wolfsgruber.
With special thanks to Simone Starlinger from Marktkraft for typesetting, getting the graphics
into shape and generally for her ability to work to impossible deadlines.
With thanks to the following who have already sent in their comments:
Dietmar Kiefer, Werner Froehling
2 3
Preface from RECOM Management
When we introduced our first DC/DC converter nearly 30 years ago, there was little pub-
lished technical material available and hardly any international standards to follow. There was
a pressing need to communicate practical application information to our customers, which
prompted us to add some simple application notes as an appendix to our first published prod-
uct catalogue. The content of these guidelines grew over the years as we gained more and
more expertise. Although they are still of a rudimentary nature, they are well received by our
customer base and today they have become a 70-page application note package available on
our Website for download.
The advance of semiconductor technology and the shift towards highly integrated digital elec-
tronics has diminished the knowledge base of analogue techniques in many design labs, uni-
versities and technical colleges over the years. We often see a lack of practical know-how in
analogue circuit design, particularly with regard to applied techniques, test and measurement
and the understanding of filtering and noise suppression. Therefore, as experts in this arena,
we saw the need for a much more comprehensive technical handbook that could be used as
a reference by hardware designers and students alike.
Eventually, at the start of 2014, Steve Roberts, our Technical Director, started to invest his
free time to start documenting the extensive application knowledge on the design, test and ap-
plication of DC/DC converters available within the RECOM group. Despite all of the pressures
of his demanding job, he managed to complete this onerous task in time for Electronica 2014.
Two years later, in time for Electronica 2016, the third edition of the RECOM DC/DC Book
of Knowledge was enlarged to include an additional chapter on magnetics.
In keeping with this biennial tradition, Electronica 2018 sees the release of the RECOM AC/
DC Book of Knowledge. We released our first AC/DC converter back in 2006, so we have also
accumulated a considerable body of knowledge on AC/DC power conversion that has allowed
us to offer products from 1W up to 1kW and beyond with industrial, medical and household
certifications.
Steve has presented us with a new handbook that we are sure will greatly benefit the engi-
neering community and all those who are interested in AC/DC power conversion and its ap-
plications. The handbook will initially be available as a printed hard-copy version and as PDF
soft-copy available for free download from the RECOM website.
4 5
Preface from the Author
This AC/DC Book of Knowledge is a companion book to the
DC/DC Book of Knowledge. They are designed to be read to-
gether, so I have deliberately avoided repeating information
except where it is necessary for clarity. Some chapters are
equally applicable to DC/DC as to AC/DC applications, so I
have taken the opportunity to cover topics that were not in the
DC/DC book, but perhaps should have been.
This book is all my own work but I am acutely conscious that the breadth of knowledge re-
quired to do proper justice to this topic is wider than a single person can ever hope to achieve.
Therefore, I have relied heavily on my colleagues and the published knowledge of many
others as well as my own experience. My thanks go to everyone who has had the courage to
poke their head above the parapet and publish their ideas, concepts, designs or experimental
results and risk the barrage of critisism from the mass of other experts in this field. Bearing this
in mind, feel free to contact me if you find any errors, omissions or inaccuracies in this book
and I will get them corrected.
Technical Director
[email protected]
RECOM
6 7
Table of Contents
CHAPTER 1 .......................................................................................... 13
A Historical Introduction............................................................ 13
CHAPTER 2........................................................................................... 22
Linear AC/DC Power Supplies................................................... 22
CHAPTER 3 .......................................................................................... 27
Apparent, Reactive and Active Power ...................................... 27
CHAPTER 4........................................................................................... 31
AC Theory.................................................................................... 31
4.1 AC Theory - basics............................................................................. 31
CHAPTER 5........................................................................................... 37
Passive Components.................................................................. 37
5.1 Capacitors.............................................................................. 37
5.1.1 Class X and Y capacitors........................................................... 37
5.1.2 Electrolytic capacitors................................................................ 39
5.1.2.1 Design considerations of electrolytic capacitors..................... 40
5.1.2.2 Electrolytic capacitor lifetime calculation................................. 42
5.1.2.3 Deriving ripple current from electrolytic
capacitor temperature rise...................................................... 43
5.2 Common mode chokes...................................................................... 45
5.2.1 EMC common mode filter worked example............................... 46
CHAPTER 6........................................................................................... 49
Active Components.................................................................... 49
6.1 Silicon MOSFET................................................................................. 49
6.2 SiC MOSFET..................................................................................... 52
6.3 IGBT................................................................................................... 53
6.4 GaN HEMT......................................................................................... 54
6.4.1 GAN Transistor gate driver considerations................................ 56
6.4.2 Power transistor layout considerations...................................... 59
6.5 Unplanned turn-on due to the effect of the Miller capacitance........... 60
6.6 Unplanned turn-on due to the effect of the
parasitic inductances (Lgate and Lemitter)................................................ 61
CHAPTER 7........................................................................................... 66
Power Factor Correction............................................................ 66
8 9
7.1 Passive PFC...................................................................................... 66 CHAPTER 10....................................................................................... 127
7.1.1 Valley Fill PFC............................................................................ 68
Wireless power.......................................................................... 127
7.2 Active PFC......................................................................................... 69
10.1. Resonant wireless power transfer................................................. 129
7.2.1 DCM power factor correction..................................................... 69 10.2. Inductive wireless power transfer.................................................. 129
7.2.2 CCM power factor correction..................................................... 70 10.3 PCB inductive power transfer......................................................... 131
7.2.3 CrCM power factor correction.................................................... 71
7.2.4 Mixed-Mode PFC....................................................................... 72 CHAPTER 11....................................................................................... 136
7.2.5 Interleaved PFC......................................................................... 73 Feedback.................................................................................... 136
7.2.6 Bridgeless (totem pole) PFC...................................................... 74 11.1 Measuring loop stability ................................................................. 137
11.2 Type 1 feedback loop compensation calculation........................... 141
CHAPTER 8........................................................................................... 78 11.3 Type 2 feedback loop compensation............................................. 142
AC/DC Converter Topologies..................................................... 78 11.5 Optocoupler feedback loop compensation..................................... 145
8.1 Single-Ended Flyback........................................................................ 78 11.6 Secondary-side feedback compensation....................................... 148
8.1.1 Single-ended flyback snubber networks.................................... 82 11.7 Magnetic feedback ........................................................................ 149
8.1.3 Ringing snubbers....................................................................... 84 11.7.1 Secondary-side powered PWM feedback transformer........... 149
8.1.2 Active clamp and regenerative snubbers................................... 87 11.7.2 Direct magnetic feedback....................................................... 150
8.1.2.1 High-side active clamp............................................................ 87 11.7.3 Primary-side driven magnetic feedback................................. 151
8.2.1.2 Low-side active clamp............................................................. 88 11.8 Capacitively coupled feedback....................................................... 153
8.2.1.3 Regenerative clamp................................................................ 90 11.9 Primary-side regulation.................................................................. 155
8.3 Quasi-resonant flyback converter...................................................... 90
CHAPTER 12....................................................................................... 158
8.3.1 Resonant frequency of a transformer in QR mode.................... 91
8.4 Half-Bridge Resonant Mode converter............................................... 91 Low Standby Power Consumption Techniques..................... 158
8.5 Full-bridge resonant mode converters............................................... 93 12.1 Passive losses............................................................................... 159
8.5.1 Phase-shifted resonant full bridge.............................................. 93 12.1.1 HV start up disconnect........................................................... 159
8.5.2 Resonant full bridge................................................................... 94 12.1.2 Half-wave HV start up............................................................ 161
8.6 Single-Ended Forward converter....................................................... 97 12.1.3 Bleeder resistor losses.......................................................... 161
8.6.1 Interleaved Single-Ended Forward........................................... 101 12.2 Feedback losses............................................................................ 162
8.6.2 Current-Fed Single-Ended Forward converter......................... 105 12.2 Active losses.................................................................................. 164
8.7 Two-Transistor topologies................................................................ 107 12.2.1 Clamp losses.......................................................................... 164
8.7.1 Two-Transistor Forward converter........................................... 107 12.2.2 Variable switching frequency................................................. 165
8.7.2 Push-Pull Forward converter.................................................... 109 12.2.3 Variable valley switching........................................................ 166
8.7.3 Current-Fed Push-Pull Forward converter............................... 110 12.2.4 Pulse skipping........................................................................ 166
8.8 Using paralleled transformers to increase the power....................... 113 12.2.5 Synchronous rectification....................................................... 167
8.9 Poly-phase supplies......................................................................... 116 12.2.6 Output load detection (zero-power)........................................ 169
8.9.1 Three-phase PFC..................................................................... 117 12.3 Measuring standby power consumption......................................... 171
10 11
13.2.3 Shunt + isolation amplifier...................................................... 180
13.3 Current transformer........................................................................ 181
13.3.1 Compensated CT (AC zero-flux)............................................ 183
13.4 Rogowski Coil................................................................................ 183
13.5 Hall-effect current sensor............................................................... 184
13.6 Flux-gate current sensor................................................................ 186
13.7 GMR current sensor....................................................................... 187
12
Chapter 1
A Historical Introduction
Depending where you are travelling in the world, the mains voltage available from the wall plate will
be 50Hz or 60Hz AC (Alternating Current) with a nominal voltage of around 120VAC or 230VAC.
Unless you are plugging in a hair dryer, kettle or a lamp, you will probably need an adaptor to con-
vert the high voltage AC supply down to a low voltage DC (Direct Current) to be useful, for example
to charge your phone or power your laptop. Considering that all electronic equipment runs natively
on DC power, you might think why is the mains power always AC? And while we are on the sub-
ject, who chose 50/60Hz or 120V/230VAC as the “correct” numbers for the mains supply anyway?
Back in the nineteenth century, when public power distribution networks were first being de-
veloped, the choice was much wider. Both AC and DC mains supplies were offered, with the
standard AC frequency ranging from as low as 16⅔Hz up to as high as 133Hz. Electronic
appliances had not yet been invented, so the most common use of electricity was for lighting
or heating, both of which worked equally well with either AC or DC supplies, so the AC fre-
quency was not so important. The most common value was 42Hz and in America, Edison
patented DC power distribution and heavily promoted it as being as safe as and more reliable
than AC1. To a certain extent, this was true, as early electrical generators were less than reli-
able and the banks of batteries both stabilized the output voltage and bridged any short dura-
tion generator faults with the DC supply. This was not the case with AC generators which
needed very good speed regulators to maintain the correct output voltage with changes in
demand and had no back-up supply possibility in the event of a generator fault.
N
RL
1
Edison famously ran newspaper adverts explaining that the newly invented electric chair
used AC to kill condemned men, callously implying that his DC system was safer.
13
The arrangement shown in figure 1.1 is more commonly called an alternator because the As the power distribution network developed and the demand increased, the current flowing
current flows alternately in one direction and then in the other as the magnet spins. If a non- through the commutator brushes increased and made the DC system more unreliable than
alternating output is desired, then a mechanical switch called a commutator is needed to the simple AC generators used at the time which needed no slip rings.
reverse the connections every half cycle:
The second reason for the demise of the DC power transmission scheme was the increasing
losses as more and more houses were connected to the system. The power losses in a cable
with resistance R are proportional to the square of the current , I , flowing through it (i²R loss),
N
N
so if the voltage can be doubled to halve the current (Power = VI), then the same power ca-
RL
ble can carry the current four times further. This principle applies to both DC and AC power
transmission, but it was much easier to use transformers to step up the AC supply voltage for
long-distance transmission and to step it back down again at the far end again using trans-
formers. Edison tried to compete with his DC system by using generator sets (a DC motor
N
N
connected to a dynamo to step up or down the supply voltage) but although a low voltage DC
motor for the step-up part was easy to make, a high-voltage DC motor for the corresponding
RL
step-down part was not so reliable and the system broke down often. In the end, even Edison
abandoned the DC distribution concept and changed to alternating current power distribution.
N
Although most mains power sockets are single phase, electrical AC power stations generate
three phases at 120° from each other. The advantage of this is that 3x120° = 360°. In other
RL
words, the phases cancel out when connected to a common point.
+325Vpeak
N
N
RL
Commutator Fig. 1.4: Three Phase waveform. The sum of all three phases added together is always
zero.
Brushes
This means that unlike in DC power distribution where the current flows equally in the positive
and negative cables which therefore both need to be equally massive, an AC power distribu-
tion grid can be made with three heavy duty phase cables and a light gauge neutral wire which
is only needed to carry any imbalance current if the loads on the three phases are not exactly
Fig. 1.3: Split slip ring commutator equal. If you look at an electricity pylon, you can see the thick power cables suspended from
the cross beams with a single, thinner cable running across the tops of the pylons. This is the
14 15
neutral return wire. The earth (or ground) connection is for safety only. It carries no current But the final nail in the coffin for DC distribution was the popularity of electrical lighting. As
in normal conditions. If a current flows from any phase to earth then it is due to a fault and a more and more houses, public buildings and streets switched from gas lighting to electric
protective device (fuse or residual current trip) should cut off the power. lamps, the demand for electrical power increased rapidly. The lower cabling cost of three-
phase transmission compared to DC became the deciding factor when raising the investment
The following simplified diagram illustrates this arrangement needed to electrify whole towns (a 3-phase system uses 50% more copper than a 2-phase
when applied to whole streets in a town. system, but delivers three times the power).
More powerful and larger generators were manufactured to meet this demand. These genera-
tors were very heavy and the slower a very massive generator rotor can rotate, the less stress
3 Phases
on the bearings and framework. This is why there were originally so many different AC frequen-
P1 cies used: a smaller generator spinning at 2500 RPM created a 42Hz output, while a larger one
P2 spinning at 1000 RPM created a 16⅔Hz output (note that “a nice whole number” of revolutions
P3
per minute (RPM) was more often used, an indication that mechanical engineers built the al-
N ternators, not electrical engineers. 16⅔Hz is still used by the railways because if a commutator
Common is fitted to both the stator and rotor windings, an electric motor will run with either DC or AC at
this low frequency). However, while an incandescent filament may not flicker much at 42Hz, at
16⅔Hz it was disturbingly visible. The AC flicker was even more pronounced with arc lighting
which became increasingly used in theatres, open spaces and for street lighting.
Fig. 1.5: Diagrammatic representation of a three-phase power distribution system. The
neutral wire will carry no current if the load on each phase is balanced. The solution for high frequency AC output with slower rotation speeds was to use multiple pole
alternators: instead of two windings, four windings could be used wired alternately in series. Then
Why three phases and not two? Well, two-phase power distribution is still used in some parts of instead of one AC cycle per rotation, two cycles would be generated. For the same output AC
the USA (2x120VAC at 180° so that 240VAC equipment for heavier loads such as ovens and frequency, the rotor speed could be halved, significantly reducing the stress on the generator.
washing machines could be used on a 120V system), but the big advantage of an odd number
of phases is for use with AC motors. It does not matter where the rotor sits, a three-phase motor In the meantime, the mechanical problems with slip rings had been solved and multiple wind-
will always start up in the same direction and as the load is equally balanced on all three phases, ings could be wound on the rotor with multiple magnetic poles built into the stator. This meant
a neutral wire is not required (L1, L2, L3 and Earth). An AC motor with an even number of phas- that the optimum rotation speed could be chosen for the physical size of the generator and
es could either not start if the rotor was exactly in line with the poles, or worse, start up in the almost any output frequency could be generated by selecting the appropriate number of rotor
wrong direction. Additionally, a two phase system delivers power at twice the fundamental fre- windings and stator poles. The original Niagara Falls power station in the USA used 12 pole,
quency and this pulsating supply must be smoothed out by the inertia of the motor, making a two low speed (250 RPM) generators to output 25Hz AC, but this was later doubled up to 50Hz by
phase motor larger and heavier than a 3-phase motor of the same power. simply rearranging the windings while keeping the original low RPM which was optimally
matched to the water turbines.
N
1
S S
O
N
-1
Fig. 1.6: Principle of operation of a three-phase motor. As each phase peaks, the rotor is
pulled around to line up with that set of windings. The rotor then follows the rotating mag-
netic field. Fig. 1.7: Example of a Multiple Pole Alternator.
16 17
By this time (mid 1850’s), AEG was the leading electrical equipment manufacturer in Europe. limits were wide enough so that UK could stay at 240V and the rest of Europe remain at 220V
50Hz was supposedly chosen as the standard AC frequency in Europe because it was an and both say that they delivered a nominally 230VAC supply. A typical European solution to
even number of 100 peaks per second, which appealed to the Teutonic mind. In America, the problem! In the meantime, the power stations have all been adjusted to deliver 230VAC
Westinghouse chose 60Hz, supposedly because 50Hz flicker was still just about visible with on average, although my colleague in the UK still measures 240V on his supply as he is very
arc lighting and therefore Nicola Tesla (who licenced his AC generation patents to Westing- close to a substation.
house) had recommended a higher mains frequency, but equally probably to protect their
home market from foreign competition. Either way, commercial interests decided that 50Hz in There are still several countries that for various reasons have “non-standard” mains voltages.
some regions and 60Hz in other regions should eventually become standard. Many ex-Commonwealth countries still use the original British 240VAC supply voltage. Japan
has opted for 100VAC supplies for safety reasons, but because the South Island was supplied
+325Vpeak 50Hz with generators from Westinghouse and the north island from AEG, they have either 60Hz or
230Vrms 50Hz supply frequencies depending where you are in Japan. Four frequency converter sub-
stations have now been built to balance out the load between the islands by transferring 50Hz
+172Vpeak 60Hz and 60Hz power back-and-forth. In the USA, many large buildings use 115/277VAC split
120Vrms
supplies. The higher voltage is primarily used for lighting to increase the overall building effi-
ciency, as lighting can account for 40% of the total power consumption of a large office block.
0 5 10 15 20 25 30 35 40 ms Aircraft quickly settled on a 400Hz AC standard to reduce the weight and size of the motors
and transformers used in aeroplanes.
-172Vpeak
-325Vpeak
The effective voltage (dotted line) is the square root of the mean of the squares of the AC
voltage (RMS), in other words, the DC voltage that would have the same heating effect as the
AC voltage.
So, protectionism could explain why the AC mains is 50Hz in some countries and 60Hz in 200 - 240V/50Hz
others, but why the different supply voltages of 120VAC or 230VAC? Originally, 110-120VAC 220-240V/60Hz
was a pretty-much universal standard (also in pre-war Europe) because the influential Edi- 100-127V/60Hz
son used 110V for his DC distribution system. The competition therefore also chose similar 100-127V/50Hz
voltages so that any heating or lighting equipment designed to run on Edison’s system could
also be used with their own power supply network. As the number of domestic appliances per
household increased, the I²R losses of the 120VAC supply became more and more signifi-
cant, but the wealth of post-war US citizens meant that so many refrigerators, air conditioners Fig. 1.9: Map of world mains voltages and frequencies
and televisions with 120VAC input were already in use that an increase in mains supply
voltage in the USA was impractical. Europe, on the other hand, was recovering from the war As mentioned previously, the advantage of three phases over a single phase or two phases
with no such legacy problems and realizing that the demand for electrical power would only in- at 180° is that a motor wound with three windings will automatically start to rotate following
crease in the future chose to double the 110/120VAC voltage (220VAC in continental Europe, each phase peak in turn and always in the same direction. This makes three-phase motors
240VAC in the UK) to halve the current and quarter the losses. Eventually, in 1994, the EU very simple, robust and reliable and therefore popular in industrial automation applications.
decided to harmonize throughout Europe on 230VAC which was within the operating range of Three-phase motors do not use the neutral connection and very often have a four-wire cable
both 220VAC and 240VAC equipment. In practice, however, the allowable voltage tolerance of just the three phases and earth. As there is no neutral wire, any auxiliary power supply must
18 19
be connected across two phases as any supply connection between a phase and earth is not Footnote: Modern Power Distribution
allowed. The phase-to-phase voltage is higher than the phase-to-neutral voltage because the
two phases add up to a higher combined sine wave (figure 2). The multiplication factor is √3 Today, technologies exist that allow the conversion of AC to DC in either direction with very
or about x1.7 – the voltage between two 220VAC RMS single phases will be around 380VAC high power and efficiencies. Although AC mains voltages will remain standard for the near
RMS. future, there are several advantages in going back to DC power distribution. One reason is our
increasing dependence on electrical power. In order to guarantee supply, power distribution
600
is not just from one generator to the consumer, but from many sources connected together
to form a power grid. It is more efficient and cheaper to transmit power over long distances
400
(>500km) using high voltage DC as there are no impedance losses and the generators do not
200 need to be all synchronized to the same frequency or even the same voltage. For example, a
2000MW high voltage DC power link connects England and France to allow the two countries
0 to exchange power according to domestic demand.
-200
In the home, a DC power distribution network that links photovoltaic solar cells on the roof
-400 P1 with a fixed battery or the battery in an electric car allows a reliable, high efficiency, low run-
P2 ning-cost electrical supply which can be mains independent (off-grid). There are many advan-
P1<>P2
-600 tages in connecting together groups of homes to share energy sources (Photovoltaic, house
battery or external mains grid supply) to make a very efficient localized power supply grid.
Fig. 1.10: Waveform of a 220VAC phase-to-phase supply See http://www.isea.rwth-aachen.de for one such concept.
What all this means for a modern AC/DC power supply designer is that an universal input
single-phase power supply will need to accommodate an AC input voltage range (including
±10% tolerance) of 90 – 264VAC for world-wide use (covering 100/120/230/240VAC nominal)
or 90-305VAC to also accommodate 277VAC supplies sometimes used in the USA. AC sup-
ply frequency should ideally be 45-440Hz to cover supply variations.
20 21
Chapter 2 If Vs is the nominal voltage for each secondary winding, then Table 2.1 can be used to work out
the average DC output voltage (Vf is the forward voltage drop through a power diode ≈ 0.7V):
Figure 2.1 shows an unregulated AC/DC power supply that was common practice when I
started my career.
L 0V 0V
Input Voltage
Selector
115V 6V
For the simple example shown in figure 2.2 with 50Hz mains and 2x 6VACrms secondaries,
115V 230V
0V 0V C Rload Table 2.1 becomes:
BR
V-
N 115V 6V
TR
Table 2.2: Results of the calculations in Table 2.1 with 2x 6V secondary windings
The transformer has two primary windings of 115V which can be connected in parallel or se-
ries with the input voltage selector switch. The two 6V secondary windings are wired in series However, this average DC output value is calculated without the smoothing capac-
to give a nominal 12VAC output which is then rectified by the bridge rectifier BR and DC- itor and without a load. The larger the capacitor, the closer the measured DC out-
smoothed by the output capacitor, C, to give a typical output voltage of about 14VDC. The put will be to the peak voltage. On the other hand, the higher the load, the lower the
bridge rectifier uses four diodes, but there are other options for the secondary rectification measured DC output voltage will be. To determine the effective output voltage, we
using the same transformer and fewer diodes: need to know the load and output capacitance in order to calculate the output ripple.
Vsec
0V 0V
Returning to the original, full wave bridge rectified design, we can add the output waveform
V+ shown below:
115V 6V
C
Rload
0V 0V
B D
RMS
115V 6V
V-
TR
t
Vsec
A
0V 0V
V+ I
115V 6V
0V 0V Rload
115V 6V
V- t
RMS
TR
Fig. 2.3: Output capacitor voltage and current waveforms
Fig. 2.2: Alternative output rectifier options: top: centre-tap, bottom: half-wave
At the start of each half cycle, the output voltage rises from zero up to the peak voltage C.
22 23
Above point B (the residual voltage stored on the output capacitor), it starts to supply the load Vripple Vpeak e -t/RC
current and charge the output capacitor. The current (shown in blue) rises sharply. As the
Vpeak
secondary voltage drops below its peak, the output capacitor holds the output voltage higher
than the AC voltage and the diode bridge become reverse biased and ceases to conduct. The
AC current falls to zero. The greyed-out part of the waveform from point C until point D shows
where only the capacitor supplies the load current. The input current is thus highly discontin-
Vav
uous with a very high harmonic distortion level.
The line C-D is shown as a straight line on the diagram, although it is in fact an exponential
decay curve with the relationship: Fig. 2.4: Voltage on output capacitor, C, with load R
Eq. 2.1: As the output voltage changes with load and has a high ripple, it is common practice to use
a linear regulator to regulate the output and to provide output short circuit protection. For this
However, for practical circuits with large output capacitors, example, a 12V regulator would be most suitable as the minimum supply voltage would be
this expression can be approximated by: about 14V, giving 2V headroom for the linear regulator.
Eq. 2.2: Linear power supplies are still used where their advantages outweigh their disadvan-
tages:
With a peak-to-peak ripple voltage of: 1. As the power supply has only passive components, it is a low noise solution. A well
designed linear regulated power supply can have a very smooth output with an output
Eq. 2.3: noise level below 5µVRMS. Linear power supplies are still used in high end audio sys-
tems and RF amplifiers.
2. The same design can be used for very high input voltages by simply selecting differ-
And an average DC output voltage of: ent primary side voltage taps (e.g. 208V/380V/480VAC) or very low input voltages
(e.g. 12VAC) by using a different transformer. It is still a technical challenge to make a
Eq. 2.4: switching power supply that will work well with a 12VAC input
3. There are very few components to go wrong, so a well-specified linear power supply
So, for a 50Hz mains supply with a 1k ohm load and a 100µF capacitor, we could expect to can have a working lifetime of more than 20 years.
see a measured DC output voltage of:
4. They are generally low cost. However, due to the very high production volume of switch-
ing power supplies, the difference between a linear and switching solution is often very
small.
With a peak-to-peak ripple of approximately: The main reasons why linear AC/DC power supplies have been mainly supplanted by
switching converters are the following:
1. A 50/60Hz transformer is much bulkier and heavier than a transformer designed for
switching power supplies. For example, a 10VA mains frequency transformer has a vol-
ume of typically 65cm³, whereas a 10W switching transformer can be built into a 2cm³
core – a saving of more than x30 in size and weight.
24 25
2. 50/60Hz power supplies are inefficient. Power is transferred only at the peaks of the
mains cycle – the remaining part of the cycle is not used. On the secondary side, the
rectification diodes dissipate a significant amount of power due to the high capacitor
charging peak currents. If linear regulators are used to stabilize the output, then the effi-
ciency drops even lower. Overall efficiencies of below 50% are not unusual. In compari-
son, switching power supplies with efficiencies exceeding 90% are common.
3. 50/60Hz power supplies have poor regulation. The output voltage is load dependent
and also directly proportional to the input voltage. The hold-up time is short, so the out-
put voltage will be adversely affected by mains brown-outs and any dropped cycles. The
transient load response time is also very poor as the power supply must wait until the
next AC peak to transfer any extra energy required to cope with a sudden load increase.
4. The no load power consumption is too high to meet modern energy efficiency regula-
tions. In addition, the fact that power is transferred only at the cycle peaks means that
the power factor is also too low for many applications (a linear power supply has a
power factor of typically 0.5 – 0.7)
5. The cost of switching power supplies is now so low that a low power linear power supply
may actually be more expensive that the more complex switching converter alternative.
26
Chapter 3
CIVIL
For capacitance, C, current I leads voltage V.
For inductance, L, current I lags voltage V.
p = power
v = voltage
i = current
Fig. 3.1: AC voltage, current and apparent power for a mainly inductive load. The cur-
rent lags the voltage and the reactive power can go negative (the load is supplying
power back into the source)
If the AC current is out of alignment with the AC input voltage, then the shift can be described
as a phase angle. A phase angle of 0° means that the current and voltage are perfectly
aligned (in other words, the load is purely resistive). A phase angle of 90° means that the load
is purely reactive (either +90° = purely inductive or -90° = purely capacitive). With no resistive
element, a purely reactive load consumes no power: for two quarters of the cycle the sum of
the current and voltage is positive but for the other two quarters of the cycle the sum is nega-
tive and the two balance out.
27
of this energy is returned in other parts of the cycle, the distribution system has to cope with
the worst case instantaneous power consumption. Also, the reactive power circulating current
v i and therefore the cable losses in a system with “poor” power factor will be higher than one
with a “good” power factor (closer to 1). By encouraging customers to power-factor-correct
P
their energy consumption (by either charging more for poor power factor loads or by lobbying
governments to force customers to add power factor correction), the power companies can
θ save money.
PAVG
90° 180° 360°
It is a common mistake to think that, for example, an LED driver with power factor correction
is somehow “greener” and consumes less power. The additional power factor correction cir-
cuitry actually reduces overall efficiency by adding additional power stages to the design.
Fig. 3.2: Waveforms and apparent power for a purely inductive load A more serious issue is the problem of Top: Input Voltage Bo�om: Input Current
electromagnetic interference if the pow-
In practice purely reactive loads do not exist as there are always some resistive losses in the er supply is not properly power factor
wiring. In a power supply circuit, there will be a mix of both reactive and resistive losses lead- corrected. Take the example shown in
ing to a power factor (the ratio of active power to reactive power) somewhere between 1 and figure 3.4 of a linear power supply. The
0 (a power factor of 1 corresponds to a phase angle of zero and a power factor of 0 corre- input current is in phase with the input
sponds to a phase angle of 90°): voltage, but severely distorted. Using
the relationship shown in figure 3.3
Reactive might give the impression that the power
power (KVar)
Apparent Power [VA] , S² = P² + Q² factor = 1 as Cos φ = 1.
However, looking at the harmonics generated by the distorted input current reveals a different
φ
story:
P
100%
Fig. 3.3: Apparent power vector diagram. Reactive power does no useful work - like 80%
the head in a beer glass
60%
By convention, capacitive loads generate reactive power and inductive loads consume reac-
tive power. This is very useful, as a capacitor can be used to bring the power factor closer to 40%
1 for a mainly inductive load such as a motor or an inductor can be used to bring the power
factor closer to 1 for a mainly capacitive load. Adding such reactive components to adjust the 20%
most electricity meters only measure the active power consumed and ignore the reactive pow-
er. The main problem is that the electricity company has to supply enough power to cope with Fig. 3.5: Harmonics generated by the input current shown in figure 3.4
the peak power demand which is the combination of active and reactive powers. Even if some
28 29
The fundamental harmonic (number 1) is the input frequency (50Hz or 60Hz). This represents
the real power supplied to the converter. The remaining odd harmonics 3, 5, 7, 9, etc. repre-
sent the apparent power. As the current waveform is almost perfectly symmetrical, the even
harmonics hardly show. As can be seen from this diagram, there is a considerable amount
of energy present in the higher harmonics and therefore the power factor is not 1 but in fact
closer to 0.6, even though the current is in phase with the voltage. The problem lies in that the
input voltage is a pure sine wave but the current is a much-distorted waveform. This distortion
factor can be added to the basic Cos φ relationship to give the true real power/apparent-power
relationship:
Eq. 3.1:
In comparison, a near-perfect power factor corrected circuit where the current is not only in
phase with the input, but also a sine wave gives an ideal harmonic graph with almost all of the
input power in the fundamental harmonic only:
80%
60%
40%
20%
0%
1 3 5 7 9 11 13 15 17 19 21
Harmonic Number
The sum of the unwanted harmonics (2nd harmonic and higher) is called the total harmonic
distortion (THD) and its relationship to power factor, PF, is given by:
Eq. 3.2:
30
Chapter 4
AC Theory
Note: This next section is optional. You can skip straight to the next chapter or you can
read further. While you are deciding, following the advice of Steven Sandler who claims that
all successful books must contain a dragon, preferably a medieval dragon; please find a pic-
ture of a dragon:
In the previous section, the concept of apparent power was introduced as being a vector
composed of the elements of reactive power and active power. A vector is a two-dimensional
quantity composed of two single dimensional quantities called scalars at right angles to each
other (P and Q in figure 3.3).
• A vector can be denoted by an arrow above it (e .g. S) or more simply by bold type, e.g. S.
• The length of a vector (its magnitude or modulus) is the square root of the sum of the
squares of the two scalars that define it and is shown by bars on either side |S|.
So, in figure 3.3:
Just as apparent power is a vector, so are impedances. The reactance of an inductor consists
of two elements, its DC resistance, (DCR), which does not change with frequency and its
impedance, which is directly proportional to frequency. As both are measured in Ohms, they
can be represented on the same vector diagram.
31
I
If the frequency is zero (DC), then XL = 2πfL is also
zero which makes |Z|=R, where R is the DCR of the
inductor. As the frequency is increased, the scalar XL │VL│= Î XL
VL
) Î XL
(the AC impedance) increases and the resulting AC X L²
²+ AC Î XC
reactance is the vector, Z, with modulus |Z|. At infinite (R
XL
√ │V C│= Î XC 0 IR ϕ
VC
frequency, the AC impedance is infinite and the re- │=
│Z (Î XL + Î XC ) Z
sistance scalar R becomes zero. V=Î
VR = I R
VR
The angle between the scalars, φ, is dependent on
ϕ
the angular frequency 2πf. R
I
^
│IL │= VX L + V/R
IL
IC
│IC │= VX C + V/R
AC
Fig. 4.2: Inductor impedance vector diagram
V
^
R I = V ZL + ZC
ϕ
RL Rc ZL ZC
The same concept applies to capacitive reactances:
│Z
If the frequency is infinite, then XC = -1/2πfC is │=
√(
zero which makes |Z|=R . The resistance R is just R²
XC
+
XC
the capacitor equivalent series resistance (ESR). As ²) Fig. 4.4: Adding AC reactances in series and parallel
the frequency is decreased, the scalar Xc (the AC The same applies to adding reactances in parallel (then the voltage phasor is therefore the
impedance) increases and the resulting AC reac- same for all elements) and work out the resulting current phasor. The same relationship for
tance is the vector, Z, with modulus |Z|. At zero adding resistors in parallel applies to adding reactances in parallel:
frequency (DC), the impedance is infinite and the
resistance scalar R is zero. The angle between the scalars, φ, is dependent on the angular
frequency 2πf. Eq. 4.1:
This is all well and good, but we can’t solve every impedance problem by drawing vector or
phasor diagrams. We need some more mathematics.
Fig. 4.3: Capacitor impedance vector diagram The Z phasor consists of resistive and reactive elements, R and X, so if we get Eq. 4.2 for the
magnitude of Z for a parallel circuit:
Note: The reason why φ is conventionally shown as positive with an inductor and negative
with a capacitor is because voltage leads current in an inductor, but lags it in a capacitor.
Eq. 4.2:
A phasor is a particular type of vector. If an impedance vector is multiplied by a current, it is
transformed to a voltage (this is commonly known as Ohm’s Law, |V| = I|Z|), but it does not This expression has the form of a quadratic binomial (ax² + bx + c = 0), which if you remember
change direction. The phase information is retained. Such constant phase vectors are called from your school maths lessons has the general solution of
phasors.
The advantage of phasors is that we can add reactances in series (the current is therefore the The problem is, if the term 4ac turns out to be larger than b², then we have the square root of
same for all elements and can be represented by a reference phasor Î, which is equal to the a negative number. We can’t simply ignore this. This is applied mathematics based on real
magnitude of the current and work out the resulting voltage phasor ÎX.) components, so such results exist in real life.
32 33
Leonhard Euler (*1707 - †1783) gave the term “i” for the quantity √ (-1), but as “i” can be con- In other situations, the ± terms are not equivalent: when Equation 4.3 is applied to light trans-
fused with the symbol for current, in electronics we use “j” instead. mission, for example, then the positive and negative terms are more commonly called right
and left circularly polarized light.
Any relationship including √ (-1) is a complex number with a real part and an imaginary part.
The word “imaginary” somehow implies that the term does not really exist, which is not true. It In general, we can simplify the description of the rectangular form reactance vector diagram
is maybe more helpful to think of a number line of real numbers from –infinity to + infinity with into a much neater complex number representation: Z = cosφ |Z|+sinφ |Z|, → R + jX
imaginary numbers placed at 90° also going from –infinity to + infinity in the imaginary plane:
The beauty of this notation is that it allows us to extend the familiar Ohm’s Law relationships
from DC to AC situations (from resistances to reactances) and to use traditional solutions
Numbers
such as Thévenin’s Theorem to analyse component networks.
Rea
l
N um Ohm’s Law (DC) V = IR R=V/I I=V/R
ber
s
Imaginary
Ohm’s Law (AC) V = I(R + jX) (R + jX)=V/I I=V/(R + jX) = V(R + jX)/(R² + X²)
Adding reactances together becomes simpler because the results are always in the form of
Z = R + jX. For example, the reactance of an inductor, capacitor and resistor placed in series
Fig. 4.5: Number line representation of a complex number becomes:
If we now spin the imaginary number line around the real number axis, we get this image: Eq. 4.4:
I
L
Numbers
AC
C
V
Rea
l R
N um
ber
s
Imaginary
To also show how useful this notation is, let us take the network shown above which is a res-
Fig. 4.6: Figure 4.5 with the J axis rotated onant tank and work out its response. As the network is in series, the current flowing through
all three components must be the same.
Does this look familiar? Maybe like the typical image of the field surrounding a straight wire? At resonance, the L and C reactances cancel out, so the peak current, Io, flowing through the
And lo and behold! Maxwell’s electromagnetic field equation can be written in the form of: network is simply │V│/ R (assuming that R is much larger than the capacitor ESR and the
inductor DCR). At other frequencies, the current I that flows through the network is:
Eq. 4.3:
Where F is the combined EM field created by the combination of the E electric and H magnet- Eq. 4.5:
ic fields. In the case of magnetics, the fact that the imaginary part has both a positive and a
negative solution is not relevant; we can choose just the positive or the negative part as they
are symmetrical.
34 35
The magnification factor, Q, determines how quickly the current decreases away from the
peak at the resonant frequency. It is defined as X0/R where X0 is the reactance of the network
at resonance,
If the results of Equation 4.5 are plotted with different Q values, we get the following typical
curves:
0.2 -15
0.1 Q = 100 -20
-30
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 f/f0 1.6 1.8 2
Fig. 4.8: Example of a series resonant current plot with different Q values.
Thus we can calculate in advance the response of our resonant tank circuit without actually
having to build it and determine the optimum Q factor experimentally.
36
Chapter 5
Passive Components
5.1 Capacitors
Capacitors play an important part in AC power supplies because the input voltage drops to
zero twice during every AC mains cycle. An energy storage element is usually needed to keep
the power supply running (although there are AC powered LED drivers that allow the output to
fail at every zero crossing as a 100Hz or 120Hz LED flicker is not perceptible to most people).
An inductor can be used to effectively store current in the form of its magnetic field, but ca-
pacitors are needed to store DC voltage in the form of the electric field between its electrodes.
In addition, AC filter capacitors are needed between the line inputs and between line and
ground for EMC and surge protection. As such, they are classed as safety critical components.
AC filter capacitors are typically ceramic disc or metallized film. Both of these constructions are
symmetric and work equally well with either voltage polarity. A ceramic disc capacitor consists
of two metal electrodes separated by a ceramic dielectric substrate. This gives a very stable
capacitance value over a wide operating temperature range, but limited capacitance in the
range of picofarads to tens of nanofarads. Multiple layers can be used to increase the insulation,
so withstand voltages in the range of 1kV up to 15kV are available, as are SMD versions.
Epoxy
Coating
Ceramic disc
(dielectric)
Electrode
Metalized film capacitors use multiple layer plastic film insulators which are coated on one or
both sides with a metal film to make the electrodes. There are many different plastic films that
can be used but PTFE, polypropylene and polyester are the most common. As many layers
can be interleaved, high capacitance values are possible (nanofarads to tens of microfarads),
37
but they can become very bulky with both high rated voltage and high capacitance values. Both X-class and Y-class capacitors are classified according to their peak or rated operating
Film capacitors also have inherently low ESR and ESL values which makes them also suitable voltage and over-voltage withstand ability as defined by IEC 60384-14:
for snubber and filtering applications. Film capacitors are almost exclusively available as
through-hole mounting only. Class Peak Voltage Over-voltage withstand ability
Detailed Cross Section
X1 ≤ 4kVDC 4kV per C ≤ 1µF or 4/√C kV per C >1µF
Molded Plastic Single-sided Metallized Molded Plastic Self-Extinguishing
Case Polypropylene Film Case Resin
(First Layer)
X2 ≤ 2.5kVDC 2.5kV per C ≤ 1µF or 2.5/√C kV per C >1µF
Single-sided Metallized
Polypropylene Film
(Second Layer)
X3 ≤ 1.2kVDC None
Margin
Margin
Metal Contact
Metal Contact
Layer
Layer
Class Rated Voltage Over-voltage withstand ability
Margin
Y1 ≤ 500VAC 8kV
Leads
Y2 ≤ 300VAC 5kV
Fig. 5.2: Film capacitor construction
Y3 ≤ 250VAC None
A class X capacitor is designed to go across a mains input (from line to neutral or from phase
to phase). It is assumed that there is some form of current limiting in the supply, such as a fuse Y4 ≤ 150VAC 2.5kV
or over-current trip, so if the capacitor fails short circuit the protection device will open. There-
fore, X class capacitors are designed to fail short circuit because as long as the capacitor does Table 5.1: X-Class and Y-class capacitor ratings
not catch fire or ignite any other adjacent components, it will then fail safe.
Another use of film capacitors is in tuned filter and resonance circuits, phase shifters and pow-
A class Y capacitor is designed to go from line to ground (Class 1 power supplies), line to a er factor correction circuits. The inherently low parasitic inductance and low ESR makes the
zero potential (Class II power supplies) or across the isolation barrier from primary to the sec- frequency response very stable and the capacitance value remains linear over a wide range
ondary side. A short circuit would lead to hazardous voltages appearing on the zero potential of operating temperatures, simplifying the design process.
or secondary side connections, so they are designed to fail open circuit. For many applica-
tions, a double fault must not cause an unacceptable hazard, so for medical and household 5.1.2 Electrolytic capacitors
applications, two Y-class capacitors in series are specified across the isolation barrier or from
line to ground/zero potential. As mentioned previously, the other main function of capacitors is to store energy. Electrolytic
capacitors are almost exclusively used as the bulk storage elements in AC/DC converters due to
You might wonder how you can design the failure mode of a capacitor? The answer is in the their high volumetric efficiency, high voltage and temperature rating and low cost. The downside
internal construction. If an arc-over occurs due to an over-voltage event or a mechanical fail- is that electrolytics are polarized (DC only), so they can only be used after the rectification stage,
ure such as a pinhole in the insulation, X-class capacitors tend to fuse together, shorting the and they can explosively fail if the electrolyte overheats and starts to evaporate.
electrodes, while a Y-class capacitor has thinner conductors that will locally evaporate away
and break the conduction path. They are thus said to be self-healing. A Y-class capacitor can The internal construction is similar to the foil capacitor, except with a liquid or solid (polymer)
be used in place of an X-class capacitor, but not the other way around. However, there are so- dielectric, so that they have much in common with a battery cell construction. For example,
called safety capacitors that are rated for both X-class and Y-class applications. The marking Supercapacitors are low voltage capacitors with very high capacitance (several Farads) which
will indicate the appropriate voltage ratings for each type of application class. are a cross-over between a rechargeable battery and a capacitor. The most common electro-
lytic capacitor is the aluminium type that uses aluminium oxide (AL2O3) as the liquid electrolyte
38 39
between foil electrodes which have an etched surface to increase their effective surface area. The equivalent series resistance, ESR, has three main components: the ohmic resistance of
This allows a high capacitance-volume (CV) product with low ESR (equivalent series resist- the connections (≈10milliohm) plus the frequency dependent resistance of the dielectric oxide
ance), both important factors for bulk storage capacitors. layer, called the dissipation factor, Dox, plus the temperature dependent resistance of the
electrolyte, Re[T] which is typically:
5.1.2.1 Design considerations of electrolytic capacitors.
Eq. 5.1:
Question: When is a low-ESR 100µF electrolytic not a low-ESR 100µF capacitor?
Answer: When it is operated with a high frequency ripple current. As the frequency increases The combination of the first two factors (ohmic resistance and frequency dependent resist-
beyond around 1 kHz, the effective capacitance decays. If the capacitor is used to smooth ance) gives the blue line in the right hand image on the diagram above that will also change
rectified mains frequency, then the datasheet capacitance value can be reliably used. Howev- with temperature according to the third factor (dissipation factor). The equivalent series in-
er, if the capacitor is used in a PFC circuit operating at a higher switching frequency (typically ductance, ESL will also vary, but this effect is minor and can usually be ignored.
100kHz), then a 450VDC 100µF capacitor might act like a 60µF capacitor.
1.1 Question: When is a low-ESR 100µF electrolytic not a low-ESR 100µF capacitor?
Answer: When the capacitor is old. As an electrolytic capacitor ages, the liquid electrolyte
1.0
dries out and the ESR and equivalent series inductance, ESL, increases while the capaci-
c/c₀
450V tance decreases. The definition of the end of useful life is when the ESR, ESL or capacitance
0.8 fall outside of their respective limits. This does not mean that the capacitor will immediately
fail, but the higher dissipation will gradually increase the internal temperature until failure is
0.7 160V inevitable.
0.6
25V
0.5 ESL
10 100 1k 10k
f(Hz)
100k
= C
ESR
R le akage
Fig. 5.3: Electrolytic capacitance vs frequency.
10
0 10
-10 0.1
-20 1.0
-30 EoL
Solid CAP 0.10
-40
Electrolyte - CAP
-50 0.01 TI°CI
-55 -20 0 20 85 105 -50
0 1000 2000 3000 4000 5000 6000 7000
-25 0 25 50 75 100 125
Temperature (°C) Service Hours
Fig. 5.4: Typical electrolytic capacitance vs temperature and ESR vs temperature Fig. 5.6: Typical Electrolytic tanδ vs service hours
40 41
From figure 5.6 it can be seen that after around 6800 operating hours, a typical 100µF capac-
itor operated at its limits will have become a 75µF capacitor and the ESR/ESZ ratio (tan δ) will Thus, the calculated service lifetime, L = 7000 x 32 x 1.3 x 0.6 = 174,000 hours or nearly 20
have increased by a factor of 3.5. years when all of the lifetime multipliers are taken into account.
Bearing in mind these aging effects with electrolytic capacitors, it is vital to ensure To simplify such electrolytic capacitor lifetime calculations, RECOM offers an on-line calcula-
reliability-by-design by derating the operating conditions to give an increased lifetime. Despite tor tool on its website (www.recom-power.com)
the graphs shown above, it is easily possible to have a 20-year lifetime of an electrolytic capac-
itor when it is not overstressed. It is useful to play around with the data in the lifetime calculator to see how small changes in
the operating conditions can affect the lifetime:
5.1.2.2 Electrolytic capacitor lifetime calculation
For the example given above:
The electrolytic capacitor manufacturer’s datasheet will specify a lifetime under maximum
stress conditions (maximum voltage and temperature), therefore any reduction in the operat-
ing stress will increase the lifetime according to various multiplication factors: However:
Changing the maximum voltage from 90% rated to 80% rated increases the lifetime to nearly
Eq. 5.3: 36 years. Changing the maximum ambient temperature from 70°C to 85°C reduces the life-
time from 20 years down to only 7 years. Changing the ripple current from 50% rated to 60%
Where: rated reduces the lifetime by only 6% (from 174 khrs down to 167.5 khours), but changing it to
100% rated current loses nearly 4 years off the lifetime.
L is the service lifetime in hours.
L0 is the datasheet lifetime at maximum ripple current and full temperature limit and voltage Component selection is often a compromise between performance and cost, so by careful
stress. design, the optimal price/specification benefit can be realized.
KT is the temperature factor, , where T0 is the temperature limit and TA is the tem- 5.1.2.3 Deriving ripple current from electrolytic capacitor temperature rise
perature in the application.
For example, if the T0 temperature is 105°C and the TA temperature is 70°C, then the KT life- It is also often very difficult to find out the capacitor ripple current. Adding even a 10milliohm
time multiplier is x11.3. shunt resistor to measure the current can seriously affect the measured result if the ESR of
the capacitors is also around 10milliohm. An alternate method is to derive the ripple current
KR is the ripple current factor, , where Ia is the ripple current in the applica- based on the temperature rise and volumetric thermal conductivity of the capacitor.
tion, IR is the maximum ripple limit, ∆T0 is the internal temperature rise and Ki is an empirical
safety factor in the range of 2 to 4.
Convection
For example, if the ripple current is kept to half of the maximum ripple limit, the internal tem-
perature rise kept below 5°C and the safety factor is chosen to be 2, then the KR lifetime (Radiation)
Ambient
Convection
KV is the voltage factor, , where VA is the operating voltage, VR is the maximum
rated voltage and n is an exponent that is either:
For example, if the operating voltage is 0.9 of the rated voltage, then n=5 and the KV lifetime
multiplication factor is x 1.7. Fig. 5.7: Heat extraction paths from a cylindrical PCB-mounted capacitor
42 43
Heat generated inside a capacitor can be dissipated to the surroundings by radiation, convec- chokes and transformers. Any stray AC magnetic fields can generate eddy currents in the
tion or conduction. Black body radiation contributes only a small amount to the overall thermal metallized foil conductors which will increase the core temperature and reduce lifetime.
performance of the capacitor at sea level air pressure and can be ignored in most practical
cases. Free air convection cooling is dependent on the surface area and ambient temperature 5.2 Common mode chokes
difference. Conduction cooling is via the pins into the PCB which then acts a large flat area
heatsink to transfer the heat to the surroundings via convection. Due to the construction of a Inductors are specified with a maximum continuous RMS current, IRMS, and a maximum peak
typical electrolytic capacitor, the thermal path between the foil electrode layers and the con- current, ISAT. The IRMS current is usually defined as that causing a 40°C rise in the core temper-
nection pins is less than ideal and conduction cooling from the core through the pins can also ature. Two losses contribute to the temperature rise: the copper loss in the windings = DCR x
be largely ignored. IRMS² and the magnetic core loss which is frequency and duty cycle dependent. In a common
mode choke (CMC) input filter configuration, the flux from the two windings cancels out, mak-
This leaves convection cooling as the primary mechanism for heat dissipation. ing the ISAT figure largely irrelevant.
Step 1. Calculate the free surface area: A cylinder has a side surface area of 2πrh, where
r is the radius and h is the height of the cylinder. The top of the cylinder has an area of πr².
=
Together they give the exposed surface area as: L
RMAG
CW I
Eq. 5.4:
DCR
Where SAcap is the surface area of a capacitor in cm² with diameter D in mm and height h in
mm.
Step 2. Calculate the internal power dissipation Fig. 5.8: Inductor equivalent circuit. DCR is the ohmic resistance of the winding, RMAG
The ripple current dissipates energy in the equivalent series resistance, ESR, of the capacitor. is the magnetic core loss (represented as a resistance) and CWI is the winding capaci-
This value can be found from the capacitor datasheet. The dissipated energy will cause a tance
temperature rise in the core of the capacitor.
The rated operating voltage is also important if the inductor is used as a common mode choke
Eq. 5.5: on the input side of an AC/DC converter as the two windings carry the full mains input voltage
across them. The rated voltage must be sufficient over the entire operating temperature range.
Where Pdiss is the power dissipated in the capacitor core, Fe is the emissions factor (typically It is often necessary to insulate the conductive ferrite core and put a separator between the
0.95 for free air convection), KSB is the Stefan Boltzmann’s Constant (5.56x10-8 Wm²K4) and two windings to guarantee the creepage and clearances so that there is no flash-over.
Trise is the temperature difference between ambient and the top centre point of the capacitor.
The ripple current that causes this temperature rise is:
Eq. 5.6:
Practical Tip: In the introduction to this section, it was stated that heat transfer from the ca-
pacitor through the pins into the PCB can largely be ignored. This is valid for heat transfer from
the capacitor core out into the PCB copper tracks as the thermal impedance is higher from the
core through the pins to the PCB than directly from the core to the capacitor case. However,
if there is an external source of heat, for example a power diode placed close to a capacitor,
then the low thermal impedance copper PCB tracks can transfer sufficient heat back into the
capacitor via the pins to significantly add to the thermal load inside the capacitor and reduce
its lifetime. Another “unexpected” source of internal heat generation can be varying external
magnetic fields. Both electrolytic and foil capacitors are often placed very close to inductors, Fig. 5.9: Toroidal common mode choke with insulation and separator
44 45
The impedance of a CMC increases with increasing frequency until it reaches a peak at the Step 5: Select a suitable common mode choke and the X and Y capacitors to make up the
self-resonant frequency (SRF), then it declines due to the effect of the interwinding capaci- filter as shown below:
tance. The SRF should be chosen to be close to the frequency of the maximum noise inter- C3
ference (usually the switching frequency or a multiple thereof) to give the largest attenuation. Y2
CMC
Unfiltered C1 Filtered
Eq. 5.7:
AC AC
X2
Mains Mains
Where SRF is the self-resonant frequency (assuming DCR is low and RMAG is high)
C2
Power supply specification: 100W, 115 – 230V supply, 45 kHz switching frequency, 85%
efficient flyback design. Fig. 5.10: Basic AC input filter
Step 1. Determine the probable noise level As the application is a universal mains filter, the choke needs to be rated for 250VAC opera-
The circuit switches at 45kHz with a 50% duty cycle at full load. This will generate a funda- tion. From step 4, we need a current rating of 1.14A or higher. From step 3, it should have a
mental noise peak at 45kHz with harmonics at higher frequency intervals of nf0, where n = peak attenuation close to 225kHz.
1,3,5,… decreasing in intensity with -20dBµV/decade. Frequencies below 150kHz are ignored
by the industrial EMC standards, so we need only concern ourselves from the fifth harmonic We could choose a 5mH choke rated at 250VAC, 2A @ Tamb + 40°C for example. The high
at 5f0 or 225kHz and above. If we assume a 1V drop across the diode bridge, then the fun- common mode inductance will give an attenuation curve that peaks at around 0.2MHz, which
damental frequency will have an amplitude: is ideal. The stray inductance is typically 1%, i.e. 47µH
The X-capacitor reacts with the stray inductance to make a differential mode filter:
Eq. 5.8:
Y2
The maximum input current occurs at full load with the minimum input voltage (115VAC -10% Fig. 5.11: Initial design of the EMC filter
≈ 103VAC). Assuming power factor is corrected, the input current will then be (100/0.85)/103
= 1.14A
46 47
It must be stressed that the above calculation is not sufficient to guarantee an EMC test pass.
It is just a first step to allow a test set-up to be made.
Practical Tip: It is often quite difficult to find a common mode choke with enough stray leak-
age inductance to keep the size of the X-capacitor reasonable. It is often worth using either
using a differential mode choke in series with the common mode choke or using a hybrid
choke which incorporates elements of both DM and CM types in one body.
48
Chapter 6
Active Components
The Metal Oxide Silicon Field Effect Transistor (MOSFET) is the workhorse of the majority of
AC/DC circuits. The basic construction is simple with a gate insulated from the body by a thin
metal oxide layer. The source and drain regions are heavily doped (n+ and p+) so that there
is a semiconductor barrier to the flow of charge. When a gate-source voltage higher than the
threshold voltage is applied, this barrier is overcome and current flows freely:
GATE
SOURCE GATE ISOLATION SOURCE D
P+ N+ N+ P+
N- BASE
N+ BUFFER
S
DRAIN
Integral to the MOSFET’s construction is a body diode formed from the PN junction between
the P+ and N- interface (shown in red in the figure). This means that a MOSFET can only be
used to switch unipolar voltages. However, in some applications, the body diode is useful as a
freewheeling diode to conduct with a negative voltage across a MOSFET that is switched off.
The equivalent model shows the various parasitic elements that affect the switching perfor-
mance: Drain
R DSon
49
The turn-on characteristic of a MOSFET can be divided into 4 stages: See the final section in this chapter (Use of Kelvin contacts) for considerations to reduce or
eliminate these effects.
Stage 1. The gate turn-on voltage is applied. Cgs is charged VGS
up via Lgate and Rgate. The transistor is still off. During these stage 2 and stage 3 transition periods, the transistor is behaving as a variable
Stage 2. The gate threshold voltage, Vth, is reached. VTH resistor and dissipating a lot of power. When the transistor is fully off, only leakage currents
ID starts to linearly increase proportional to Vgate flow and when the transistor is fully on, the main loss is through the RDSON resistance, which is
IG
Stage 3. The Miller plateau is reached. The ID is at typically in the region of milliohms and also very low. However, during repetitive on-off transi-
maximum and VDS is starting to decrease. The gate tions, the power dissipation will be much higher than in the static fully-on condition.
voltage remains constant as any excess gate
VDS
current is diverted to charge up the miller A simplified gate drive and switching loss calculation is shown below:
capacitance.
Stage 4. VDS has almost reached its minimum Eq. 6.1:
(VDS,min = ID.RDSon) and the gate voltage can ID
Fig. 6.3: MOSFET turn-on characteristic Where Qgate is the total charge needed to charge the gate capacitances.
The turn-off characteristic is essentially the same process in reverse: The power dissipation in the transistor is dependent on the transition times:
Stage 1. The gate turn-off voltage is applied. Cgs and Cgd are VGS
Eq. 6.2:
discharged via Rgate. The transistor is still on.
VTH
Stage 2. Cmiller is now fully discharged and the negative gate
current can now start to deplete the charge on CGS, IG Where IL is the load current and tstage2 / tstage3 is the time spent is stages 2 and 3 of the total
turning off the transistor. VDS starts to linearly switching time, T, respectively.
increase while Vgs remains constant.
Stage 3. VDS is now at the supply voltage and ID starts to With a high current gate drive, these stage 2 and stage 3 times can be reduced, so it is impor-
VDS
decrease. The gate voltage can decrease further tant to use a low impedance gate voltage source. To reduce the switching losses further, the
as CDS is now fully discharged. gate voltage can be increased to charge and discharge the gate capacitances more quickly. In
Stage 4. The transistor is fully off as Vgate is now below VTH. particular, if the gate voltage switches to a negative value, the switch-off time can be reduced
The remaining time is just to fully discharge any ID significantly compared to just switching from above VTH down to zero volts. There is a limit to
parasitic gate capacitances. the gate voltage defined by the breakdown voltage between gate and source, BVDSS. In order
to reduce the gate capacitance to a minimum, the metal oxide insulation layer is made very
Fig. 6.4: MOSFET turn off characteristic ① ② ③ ④ thin, at the cost that the breakdown voltage is then very low (VGS,max is typically ±15-20 volts).
Practical Tip: As can be seen from the turn on and turn off characteristics, there are periods Another way to reduce switching losses is to reduce the switching frequency, fsw, but this can
when the voltage across the transistor and the current through the resistor are in transition. increase losses in other parts of the circuit or reduce the control loop response time to unac-
One dangerous area is turn off, stage 2. The output voltage is ramping up and this dv/dt will ceptable levels. The only other factor remaining is the gate charge, Qgate. A typical low voltage
feed back through the miller capacitance and attempt to pull up the gate voltage. If the effec- MOSFET will have a total gate charge of around 5-10nC, but this value also increases with
tive gate drive impedance is too high, the transistor can switch itself back on again! increased VDS capability. A 700V MOSFET will have a total gate charge of around 10-25nC,
A similar effect can occur during switch on, stage 2. The drain current is ramping up which simply due to the thicker epitaxial layers needed for the higher breakdown voltage strength.
can cause the drain voltage to rise up due to inductances in the drain to ground path (ground
bounce). This will reduce the effective VGS voltage and could turn the transistor back off again.
50 51
6.2 SiC MOSFET 6.3 IGBT
Silicon Carbide or SiC MOSFETs are increasingly finding new applications in power electron- Insulated Gate Bipolar Transistors (IGBTs) combine the insulated gate characteristics of
ics. Full-bridge and half-bridge circuits for high-voltage applications (several hundred volts) MOSFETs with the high current capability of bipolar transistors. It is in effect
C a voltage-con-
were previously reserved for only the IGBT domain (see next section) because Silicon MOS- trolled transistor:
FETs, especially Super Junction MOSFETs are not suitable for these applications due to
the extremely poor parasitic body diode performance; when silicon MOSFETs experience an C NPN
unwanted turn-on effect, the body diode quickly goes into thermal destruction. Often, even a
N -MOSFET
single false switching operation on the conductive body diode either exceeds the maximum
di/dt of the body diode and thus destroys the MOSFET, or the switching operation incites the
gate to oscillate, so that the maximum gate source voltage is exceeded and the transistor is
also destroyed.
G = G
SiC MOSFETs use a different substrate with a 10x higher dielectric breakdown strength than Fig. 6.6: Equivalent model of an insulated gate bipolar transistor (n-channel IGBT)
E
Silicon, so the layers can be made thinner to reduce the gate charge and RDSon values. In ad- E
dition, SiC has a three times better thermal conductivity, so the power handling capacity can One of the main differences to a MOSFET is that an IGBT has no body diode, so it will not
be increased in the same sized package. conduct reverse currents. If an anti-parallel free-wheeling diode is required, then it needs to
be added externally.
GATE
SOURCE GATE ISOLATION SOURCE
P+ N+ N+ P+ GATE + + - -
N- BASE SOURCE
N+
GATE ISOLATION SOURCE
N+
C C C C
X10 Size Reduction P+ N- BASE P+
SiC N+ BUFFER
Si N+ Buffer DRAIN
DRAIN G G G G
E E E E
Fig. 6.5: Diagrammatic comparison between Si-MOSFET and SIC-MOSFET construc- - - + +
tion
Due to the higher dielectric strength, the SiC substrate can be made up to 10x thinner than the + + - -
D D D D
Si substrate, reducing the body resistance by a factor of up to 1000. The thinner layers also
N-MOSFET N-MOSFET N -MOSFET N-MOSFET
reduce the internal capacitances. So, for the same switching frequency, a SiC MOSFET will
have around a third to a quarter of the switching losses of an equivalent Si MOSFET. Put an-
other way, a SiC MOSFET can be operated four times faster for the same power dissipation. G G G G
S S S S
SiC MOSFETs also have a far more robust body diode than Si MOSFETS. The maximum - - + +
switching di/dt of the body diode of super junction MOSFETs is around 60A/μs for the latest
generation and of fast switching MOSFETs up to 900A/μs for SJ MOSFETs with ultra-fast Fig. 6.7: Comparison of IGBT and MOSFET blocking capabilities
body diodes, but these values pale in comparison with SiC MOSFETs with up to 6000A/µs.
The main disadvantage of SiC-MOSFETs is that they are often more expensive than Si MOS- Although IGBTs switch on quickly, they switch off more slowly. This is due to an effect called
FETs, but this difference will reduce over time (the price difference between a SiC-MOSFET the recombination tail. Once the gate voltage has been turned off, any remaining charge in
and a superjunction Si-MOSFET is already comparable). the transistor body region must be dissipated by recombination of the holes with electrons as
there is no terminal to remove them. This process is relatively slow and delays the switch-off
characteristic:
52 53
SOURCE
GATE DRAIN
VCE GATE ISOLATION
IC
IC Depletion
VCE GaN
Zone
AlN BUFFER
0 t 0 t
IGBT turn-on IGBT turn-off SOURCE
GATE DRAIN
Fig. 6.8: Comparison of the switch-on and switch-off characteristics of an IGBT. The
GATE ISOLATION
recombination tail in the turn-off characteristic slows down the switching speed and
Depletion Zone
increases the power dissipation GaN
Despite this disadvantage, IGBTs are widely used in power switching for high current/high
AlN BUFFER
voltage applications such as motor inverters, power rectifiers and photovoltaic power. Fig. 6.10: Enhancement-mode GaN transistor in the OFF (top) and ON (bottom) condi-
tions
AC The extreme thinness of the gate isolation layer means that high gate-source voltages will
cause an internal flashover, even though the material itself has a high breakdown voltage
DC rating. A GaN E-HEMT has a typical full enhancement voltage of 7V but will be damaged if the
VGS exceeds ±10V, much lower than the gate voltages that are typically used in IGBT or SiC
Boost Converter DC to AC gate drivers. Due to the extremely fast rise and fall times of the low-capacitance gate channel,
Solar Panels Filter
with MPPT Inverter any excessive inductance in the external gate drive could cause spikes or voltage ringing
and exceed these voltage limits. Therefore, a 6V gate drive voltage is a good compromise
Fig. 6.9: Photovoltaic application using IGBTs for the Maximum Power Point Tracking between high efficiency and staying within a safe operating area.
function and for the DC/AC inverter stage
IGBT or SiC gate drive circuits also typically turn off with a negative gate drive voltage. This
speeds up the charge extraction from the gate capacitance and therefore the switch-off time.
6.4 GaN HEMT GaN Transistors have such low gate capacitance that a negative gate drive is not necessary.
A gate voltage of 0V will completely and reliably turn off the HEMT in nanoseconds.
Gallium Nitride (GaN) semiconductors are High Electron Mobility Transistor (HEMT) devices, a
class of transistors with almost perfect switching characteristics. HEMT means that electrons travel Only if the layout has excessive inductance would a negative gate drive offer protection
within the internal crystal structure as a two-dimensional electron gas with very high mobility, thus against unintentional turn-on caused by ringing. However, as GaN HEMT do not have a body
creating a device with very high conductivity and low RDSON. The use of GaN chemistry increases diode like MOSFETs and are symmetrically conductive devices, a negative gate voltage will
the breakdown voltage which means that the layers within the transistor can be made very thin increase reverse conduction losses. A single-ended 6V gate drive voltage is sufficient, al-
and close together. This both accelerates the switching speed and reduces the gate capacitance. though for very high frequency switching applications, a bipolar +6V/-1V drive is sometimes
suggested to account for layout parasitics.
The enhancement mode type (E-HEMT) has a depletion zone under the gate which blocks
the flow of electrons and requires a positive gate voltage with respect to the source pin to turn Figure 6.11 shows typical gate driver voltages that are commonly used to drive switching tran-
on. As the depletion zone under the gate is so thin, very little injected charge is needed to turn sistors. The 1st Generation SiC MOSFETS use +20/-5V supplies, but 2nd Generation devices
the transistor on and off, so switching speeds in the MHz region are possible without incurring will use +15/-3V supply voltages:
high switching losses.
54 55
IGBT SiCFET GaNFET
+15 +20 (+15) +6V
C D D
G G G D
PWM PWM PWM
GND GND G
E S S Gate Drive 20R GaNFET
20R
-9 -5 (-3) GND
S
Fig. 6.11: Typical supply voltages for IGBT, SiC and GaN gate drivers
Fig. 6.12: slope control using gate resistors
6.4.1 GAN Transistor gate driver considerations 5. High-side gate drivers are often implemented with a bootstrap power supply circuit (figure
6.13). Although this means that the same isolated power supply can be used for both
1. The majority of ultrafast gate driver ICs have an under-voltage lock-out (UVLO) high-side and low-side drivers, it has some inherent weaknesses.
function that disables the output if the supply voltage is too low. Those meant Bootstrap
Diode
for IGBT/SiC applications will often have a relatively high UVLO level as they VDD V+
are designed to operate from supply voltages up to 24V. A gate driver that is
compatible with the much lower gate voltages used in GaN must be selected.
VDDH
D
LParasitic
2. The current needed to charge and discharge the gate capacitance is dependent on the PWMH
VOH
20R
G
GaNFET
gate capacitance and the rate of change of the gate voltage. Although the GaN gate capac- Bootstrap
20R S LParasitic
LParasitic
itance is very low, the high dv/dt means that a gate driver with a current drive capability of at VSS H Capacitor
Out
LParasitic
least ±0.5A (or better 1A sink) is required. This peak current will be supplied from a ceram-
ic capacitor mounted as close to the driver pins as possible, so the average supply current VOL G D
PWML 20R GaNFET
will be much lower (in the tens of milliamps range). The gate driver sink drive should be 20R
low-impedance (<2 ohms) to reduce the chance of cross-conduction (see next comment). S
LParasitic
3. The maximum and minimum pulse widths should be limited to avoid false triggering and
Half-Bridge Gate Driver
interaction with any the overlap protection circuit. At 5MHz operating frequency, this mini-
mum pulse width limits the duty cycle to 90%. At higher frequencies, this limitation becomes Fig. 6.13: Typical high-side bootstrap supply circuit showing unwanted parasitic in-
more significant and the duty cycle may need to be controlled so that it does not exceed 80%. ductances. For a nominal 6V VDDH, the bootstrap voltage can vary between 5.5V and
8.5V depending on operating conditions (see text below)
4. An ultrafast gate drive design is susceptible to undesired turn-on (causing cross-conduc-
tion in bridge circuits) due to parasitic gate driver inductances interacting with the high The bootstrap diode must have an ultrafast recovery characteristic. If it cannot switch as
Miller capacitance discharge current thus creating a ringing oscillation that could send the quickly as the GaN output then a reverse current will flow back into the VDD supply. Not
gate voltage momentarily high again. The slew rates can be limited by a dv/dt limiting gate only will these current spikes affect the lifetime of the diode but the resulting high frequency
resistor to reduce the possibility of this effect. interference on the supply rail will cause havoc with the EMC compliance. The gate driver
bootstrap supply voltage is dependent on the difference between the VDD supply and the
A turn-on gate resistor in the range of 10-20 ohms will typically give an 80-40kV/µs slew rate. capacitively-coupled output (switching node) voltage. This means that the voltage across the
The turn-off resistance should be smaller to reduce the turn-off losses. A Schottky diode with bootstrap capacitor can vary by more than ±20% during operation.
a resistor in parallel with the gate resistor can be used to independently control the turn-on
and turn-off slew rates: There will be a volt drop across the bootstrap diode of around 0.7V meaning a 6.7V VDD
would be needed to have a VDDH voltage of 6V. The switching node voltage may not go com-
pletely to the ground voltage during forward conduction, meaning that the effective gate driver
56 57
supply voltage may be as low as 5.5V. If the gate driver supply voltage is too low, the GaN This floating design uses an isolated DC/DC converter and digital isolator to create a gate
HEMT will not be fully enhanced and the conduction losses will be higher. driver circuit for a GaN HEMT that could be used as a boost converter, buck converter or buck/
boost converter switching application on either the high side or low side. The single-channel
However, it is not advisable to increase the VDD supply voltage because during reverse con- digital isolator output stage is powered from a low power LDO regulator connected to the 6V
duction conditions, the switching node voltage can swing to as much as -2.5V below ground, gate driver supply. The UCC27322 high speed driver can deliver up to ±9A peak current and
meaning an effective bootstrap voltage is +6.7V -0.7V +2.5V = 8.5V. This is getting perilously the Schmitt-trigger input switches cleanly from the 5V output of the digital isolator. A dead-
close to the absolute maximum gate voltage of 10V. In addition, the interaction with the load time delay can be implemented with a simple RC filter.
current and parasitic inductances can cause negative-going spikes to be generated at the
switching node by high di/dt transitions. There could be operating conditions where the boot- The lateral construction of GaN transistors also creates the possibility to integrate the gate
strap voltage will exceed 10V when the di/dt undershoot spikes are also taken into account. driver inside the transistor package. This reduces the parasitic gate inductances and allows
higher switching frequencies or higher slew rates without the risk of false triggering. Neverthe-
A more reliable solution is to use a separate galvanically isolated supply for the high-side gate less, an isolated gate driver power supply and drive signal isolator are still required.
driver. This will ensure a stable gate voltage swing irrespective of the operating conditions.
6. Gate driver inductances can be minimized by good design, but it is more difficult to con- 6.4.2 Power transistor layout considerations
trol the parasitic inductances of the power ground as the layout choices for high current
paths are more restricted. Although a low-side switching circuit has a common pow- Irrespective of the power transistor type used (see table below), careful PCB layout is required
er ground and gate driver ground, any parasitic layout inductances will create ground when switching high voltages and high currents.
bounce under high di/dt conditions. For operational safety, it is therefore advisable
also to galvanically isolate the low-side drivers as well as the high-side drivers. If the
gate drivers are isolated, then the influence of the layout power ground inductances Transistor Type Si-MOSFET SiC IGBT GaN
can be eliminated by connecting the gate driver ground directly to the transistor source
connection (or to the Kelvin connection if this is supported in the transistor package). Max. Voltage Up to 1000V More than More than Up to 1000V
5000V 5000V
7. The PWM isolator and galvanically isolated DC/DC converter should have low isolation
capacitance. The high dV/dt slew rates and switching frequencies possible with GaN de- Max. Current Up to 200A Up to 1000A Up to 1200A Up to 50A
vices will stress the isolation barrier, even if the absolute voltage swings are well within the
voltage ratings of the components. For high dV/dt applications, the isolation capacitance Gate Drive, Vg 0V/+3V up to -3V/+15V up to -9V/+15V typ. 0V/+6V up to
should be <4pF for the PWM isolator and <10pF for the high side DC/DC converter. If a DC/ 0V/+10V -5V/+20V -1V/+6V
DC converter is also used on the low side to eliminate ground bounce, then the isolation
capacitance is not so critical, however an isolation capacitance of <100pF is desirable. Switching speed fast Very fast slow Very, very fast
Practical Tip: Isolated GaN Power Switch. Cost Low Medium Low High
Isolation
Barrier
Table 6.1: Comparison of power transistor characteristics
R15P06S
DC/DC
+Vin
+Vout
+15V
The following discussion is based on IGBT switching transistors, but the basic principles are
OVP
1µF 6V8
-Vin -Vout Zener
+5Viso
the same for Si-MOSFETS, SiC-MOSFETS and GaN-MOSFETs.
+6Viso
LDO
1µF
Gate 4.7µF 0.22 µF
Driver GaNFET
Digital Isolator
D
PWM G
50 R
In Out 20R
22pF 1K
SDM03U40-7 20R
100pF
S
0V Dead-time
Circuit
(optional )
Fig. 6.14: Example of an isolated high-side or low-side GaN power switch gate drive
58 59
The additional capacitive load of Creverse will not be a problem for most driver circuits: it only
becomes an issue when the gate-emitter capacitance Cinput becomes sufficiently charged by
the remaining current flowing from Creverse that the gate voltage can rise so that transistor turns
C re ve rse C
on again.
Lgate G Coutput
PWM IGBT The charging current of Cinput can be defined from the following relationship:
Cinput
Eq. 6.4
E
Where Idriver is dependent on the gate driver internal impedance, the DC gate resistance and
Fig. 6.15: IGBT gate driver with parasitic components and an anti-parallel diode the AC impedance of Lgate ICreverse
The driver circuit must be designed to prevent unwanted turn-on in all operating conditions.
IDriver C re ve rse C
Otherwise, this can lead to shoot-through short circuits, which can manifest itself in increased
losses, increased component stress, shorter service life, worse EMC and in extreme cases,
Lgate G Coutput
to the destruction of the transistor.
PWM IGBT
Essentially, we have two kinds of unwanted switch-on timing:
• An unwanted turn-on due to the effect of the CGE capacitance (Creverse). Cinput
• An unwanted turn-on due to the effect of the parasitic inductances (Lgate and Lemitter)
E
6.5 Unplanned turn-on due to the effect of the Miller capacitance Fig. 6.17: Residual input capacitance charging current ICinput
As the collector emitter voltage rises, either when the low-side IGBT is turned off or in a bridge So what measures can be taken to avoid undesired turn-on due to the reverse capacitance
circuit, the high-side IGBT is turned on and current flows through the anti-parallel diode, the current?
Miller capacitance, Creverse, must be charged up. The Miller capacitance charging current can i. Limit the dV/dt. By slowing the rate of change of the VCE voltage, the Creverse current is
be calculated as follows: reduced. However, this means higher switching losses.
ii. Reduce the parasitic inductance Lgate. By suitable choice of layout and package, the
Eq. 6.3: 1000 Creverse current can be diverted away from charging up the gate-emitter capacitance,
Cinput. However, this restricts the design freedom of the PCB layouter.
The Miller capacitance is given in most transistor da- iii. Use a negative gate emitter voltage. If the driver output goes negative, the gate is
tasheets, but this is, however, just a rough value. The held hard off and the safety margin between the gate turn-on threshold voltage and
value of Creverse is strongly voltage dependent and also actual gate voltage is increased. Thus, an unwanted turn-on is impossible even
C, CAPACITANCE [pF]
varies with temperature and current. Most data sheets under worst case dV/dt conditions.
only define the Miller capacitance under certain ideal 100 iv. Use GaN HEMTs which have a negligible reverse capacitance.
conditions, so measuring the value under real operat-
ing conditions is strongly recommended.
6.6 Unplanned turn-on due to the effect of the parasitic inductances
The following graph shows the effect (Lgate and Lemitter)
of VCE on the reverse capacitance:
10
In the ON state, current flows through the transistor and also through the emitter-side induct-
Fig. 6.16: Variation of Creverse 0 10 20 30 ance of the load current. If the current is now turned abruptly off, a negative voltage is gener-
VCE, COLLECTOR-EMITTER VOLTAGE [V]
with VCE in an IGBT ated by emitter-side load inductance voltage according to the following relationship:
60 61
Eq. 6.5: Practical Tip: How do you to check whether your gate driver design is safely under the gate
emitter threshold voltage during operational switching operations?
Even a short PCB track can have an inductance of a few nanohenries. A via will have an It is not as simple as just attaching an oscilloscope probe and monitoring the gate voltage as
inductance of tens of nanohenries. This does not sound much, but at very high current slew direct access to the gate and emitter is difficult in practice and the readings will be affected
rates the resulting voltage drop can be in the order of volts. The voltage at the emitter is thus by the capacitance loading of the probe itself. Thus, the measured values do not necessarily
significantly lower than the power ground reference. If the gate driver output ground reference reflect reality. (Wer Mist misst, misst Mist: Who wrongly measures, measures wrongly).
is at the same power ground potential, this results in a positive gate-emitter voltage and if this
voltage exceeds the threshold voltage, the transistor will then momentarily switch on again. Rather, you need to measure the inductances Lemitter, Lgate and in some cases even LLayout and
do the necessary calculations.
In bridge arrangements, the inductances of the other bridge branches and the PCB layout can
add to the effective emitter-side load inductance. One way to find out if there are momentary unwanted turn-on effects in a bridge design is to
measure the current in each branch of the bridge. Again, one must be careful that you do not
C C
C re ve rse C re ve rse
change the switching behaviour of IGBTs by measuring the current. Thus, there must be no
Lgate G Coutput Coutput G L gate
additional resistances or inductances in the gate-emitter path. One method which has been
PWM IGBT IGBT PWM
Cinput Cinput
proven to be reasonably accurate is to use a current shunt in the high side collector connec-
E E
tion and an isolated oscilloscope as shown below:
Drivergnd Le mi�e r Le mi�e r Drivergnd HV
Llayout L layout L‘
L
Powergnd1 Powergnd2
SHUNT
Powergnd N‘
N
C
Isolation
Oscilloscope
Fig. 6.18: Low side bridge circuit showing power ground parasitic inductances G
IGBT
Transformer
E
Non-isolated gate driver circuits in bridge arrangements can often exhibit significant poten- E
tial differences between of the various connection points of Powergnd and the gate driver C
grounds, thereby leading to the significant impact of potentially unwanted turn-on effects due G
IGBT
to the parasitic inductances. In order to reduce the ground potential differences, it is neces-
sary to connect the system ground to point Powergnd2 and also to use a star-earth connection E
to driver ground connections, Drivergnd. Furthermore, the inductance LLayout must be the same
on both sides of the bridge.
Fig. 6.19: Measurement setup to check bridge current flow (Note: disconnecting the
Often the layout does not allow for absolute symmetry. If the system Powergnd is now con- ground connection can allow the oscilloscope chassis to have dangerously high volt-
nected to the point Powergnd1 instead of Powergnd2, then the right-hand branch will exhibit ages - use with extreme caution!)
an increased gate-emitter voltage equal to:
Even if this measurement does not reveal any unwanted current peaks, you still cannot as-
sume that the design is safe under all operating conditions. To be sure, you would have to
Eq. 6.6: have to select transistors having the minimum threshold voltages given in the datasheet and
test at the maximum permissible temperature and maximum di/dt and dV/dt levels. So what
can be done to minimize the unwanted effects of parasitic inductances?
The same imbalance is true if the system Powergnd is connected closer to the point Pow- i. Reduce di/dt. Slower current decay rates result in lower voltages induced in the parasitic
ergnd2 for the left-hand branch, of course. inductances and thus lower voltages between gate and emitter. However, this increases
the switching losses.
62 63
ii. Reduce the layout inductance. The lower the layout inductance (track or cable lengths), In summary: there are many ways to prevent undesired turn-on of a power transistor, but
the smaller the parasitic voltage generated. there are, however, just as many dangers that it happens! The safest way to prevent unwant-
ed turn-on is to use an isolated dual supply for the gate driver with a negative turn-off voltage
iii. Use negative gate emitter voltages. By using a negative gate-emitter voltage instead of and to keep the parasitic inductances as low as possible. Ideally, a transistor package with
GND, the safety margin distance of the gate-emitter voltage to the gate emitter thresh- Kelvin connections should be used to eliminate the effect of layout inductances.
old voltage is increased.
Recom has developed an evaluation board (R-REF01-HB) to allow circuit designers to exper-
iv. Galvanically separate the gate drive from the power ground. Through the use of isolated iment and compare the different IGBT, SiC and GaN switching technologies using the same
gate drivers for each transistor, the influences of the emitter inductances can be eliminat- layout and driver IC. Only the DC/DC converters (included) need to be selected to match the
ed as the driver supply ground point is connected directly to the respective transistor transistors being used. The layout can be used for both three pin and four pin transistors with
emitters. Now that the Lemitter parasitics are not part of the driver current loop, their effect Kelvin contact.
is eliminated.
E E
L e mitte r L e mitte r
L layout Llayout
Powergnd1 Powergnd2
Powergnd
Several transistor manufacturers now offer packages in which a seperate Kelvin connection
is provided for the emitter. Although this also has its own small parasitic inductance due to
the connection path, the main load current does not flow through it, so no induced voltage is
generated by any load current variations. This solution eliminates the effects of both the Lemitter
and Llayout parasitic inductances.
E E
Kelvin Kelvin Fig 6.22: R-Ref01-HB Schematic
L e mi�e r Le mi�e r
Powergnd
64 65
Chapter 7 One of the main problems with the simple passive PFC correction circuit shown above is that
the PFC choke can only operate over a limited input voltage range and still adequately correct
the power factor. A solution often used in very low-cost passive PFC circuits is to add a volt-
Power Factor Correction age selector switch between 115VAC and 230VAC operation (figure 7.2). The switch is either
open (230V) and the PFC choke is connected in series with the full wave rectifier or closed
Power Factor Correction (PFC) is required for AC/DC power supplies with more than 75W (115V) making the circuit then the same as a half wave voltage doubler so that the output
output power (25W in the case of LED drivers) in order to comply with IEC/EN 61000-3-2. voltage stays the same (only the left half of the PFC choke and the left half of the full bridge
PFC circuits also allow higher output powers without exceeding the maximum input current are active).
limit of the mains supply: PFC Choke
L
Eq. 7.1. V+
230 VAC/
115 VAC
For an 85% efficient AC/DC converter operating from a fixed 230VAC supply fitted with a 10A
≈ 325 Vdc
over-current protection: N C1 Rload
PF = 0.70 allows a maximum output power of 0.70 x 0.85 x 230V x 10A ≈ 1370W
PF = 0.95 allows a maximum output power of 0.95 x 0.85 x 230V x 10A ≈ 1860W C2
V-
7.1 Passive PFC Fig. 7.2: Passive PFC with input voltage range switch
Returning to our simple linear power supply design in Chapter 2, the reactive power is mainly The voltage doubler capacitors can be calculated from the relationship:
capacitive although the load across the mains supply is the transformer, a primarily inductive
component. This is because the transformer “reflects” the secondary load phase shift to the Eq. 7.2:
primary side. Thus the reactive power seen by the mains supply is mainly capacitive and the
current leads the voltage. It would be possible to shift the current waveform to partially correct
the power factor by adding a series inductor - but it is not possible to fill in all of the greyed-out For a 100W power supply with 80% efficiency at 115VAC/60Hz input:
areas in the waveform shown in figure 2.3 with current, so the power factor cannot be made Iin = 100W/325VDC= 0.3A/0.8=0.375A, tholdup = 1/120Hz =0.08
perfectly equal to 1.
So, assuming an acceptable ripple Voltage of Vripple = 30V
In practice, a passive power factor correction (PFC) solution can improve an uncorrected
power factor from around 0.4 to around 0.7 by using PFC chokes (typically an iron-cored
transformer with only a single winding) but such inductors are often nearly as large and as
heavy as the isolation transformer itself: PFC
Choke
L
V+ Fig. 7.3: An example of a pas-
sive PFC design with mains
N C Rload
selector switch. The PFC choke
can be seen above the two
Fig. 7.1: Passive power factor correction - the PFC V-
voltage doubler capacitors. The
choke partially cancels out the phase shift caused advantage of this circuit is that
1
V
by the output capacitor C. The resulting voltage/cur- the electrolytic capacitors each
I
rent graph shows how the input current has been need only be rated for 200V
“delayed” by the PFC choke to give a better overall O π/2 π 3π/2 2π operation, even with a 230VAC
PF value input.
-1
66 67
not very good at noticing LED flicker at frequencies of around 100Hz). Finally, it is a low cost
7.1.1 Valley Fill PFC solution which is important for the cheaper end of the lighting market. However, for industri-
al-grade power factor corrected supplies, the high output ripple is often unacceptable. To get
Although the switched range passive PFC is very effective for high power (100W to 250W), a good power factor with low output ripple, active PFC is required.
with PFC values of >0.95 at 230VAC and >0.98 at 115VAC possible, it is not so effective at
lower power levels. However, it is also possible to get >0.9 power factor at low power levels
using only passive components. 7.2 Active PFC
The technique required is called “valley-fill” and relies on using steering diodes to charge up Active power factor correction uses a variable mark-space PWM control to manipulate the
two output capacitors to half of the peak voltage. This means that they will start to draw input input current to force it to align with the input voltage. To do this, it is necessary to increase
current much earlier in each mains half-cycle (at half the peak input voltage instead of nearly the voltage on the capacitor to ensure that at any point during the half-cycle, it can still be
at peak input voltage) and continue to draw current until much later in the half-cycle (again charged. Therefore all active PFC circuits are effectively DC boost converters. The boost
until the voltage falls to half of the peak voltage). The disadvantage of this arrangement is a voltage must be equal to or higher than the highest rectified input peak voltage, so typically
very high output ripple of 50% of the DC output voltage. 400V-425V is selected. Any higher and there will be unnecessary voltage stress on the boost
capacitor and switching elements, any lower and the PFC circuit cannot ensure that the charg-
PFC ing current can be controlled throughout the half-cycle.
Choke
There are four main topologies used for active power factor correction; discontinuous, contin-
L V Ripple uous, critical-conduction and mixed-mode.
V+
N V-
t t
The PFC controller alters the duty cycle during the rectified input half-sine wave so that the
t t mark/space ratio is smallest at the peak of the input voltage and highest at the start and end of
the cycle. The PWM frequency remains constant. The rectified input voltage is divided down
Fig. 7.5: Resulting waveforms for passive PF corrected (left) with a power factor of 0.7 by R1/R2 and used to synchronize the PFC controller. The output voltage is divided down by
and the valley-fill circuits (right) with a power
Ripple
factor of 0.9. Note that the greyed-out areas R3/R4 for the feedback loop that stabilizes the output voltage. The storage capacitor Cout is
V
where no input current flows are shorter in the valley-fill design leading to an improved PF charged up to a much higher voltage than the peak input voltage through the action of the
boost converter formed by L, Q1 and D5, but the charging current is a series of short pulses
Valley-fill circuits are most commonly used in triac-dimmable LED drivers. Firstly, the valley-fill throughout the input half-cycle, longer at low input voltage and shorter at higher input voltage.
t
circuit also works well with a phase cut mains input consisting of short sections of the mains The average current through the choke therefore follows the input waveform voltage so the
sinusoidal
I waveform and secondly, a high output ripple is not so important (the human eye is power factor is very close to 1.
68 69
t
The inductor current is shown in black, the input voltage in red and the average input current
in blue. The inductor current does not fall to zero at the end of each PWM pulse.
The PWM controller is more complex as it must track the input voltage and adjust the input
current more precisely, but the EMI generated is much lower as the input current is continuous
and not pulsating.
The major disadvantages are the significantly higher switching losses in the transistor and
higher recovery losses in both the diode and the transistor. For a CCM design, the boost
DCM- (Discon�nuous Conduc�on-) Mode rectification diode must be ultra-fast (very low Qrr). The choke needs to have a much larger
inductance than for a DCM design, although the peak current is lower.
Fig. 7.7: Discontinuous conduction mode (DCM).
The inductor current is shown in black, the input voltage in red and the average input current 7.2.3 CrCM power factor correction.
in blue. The inductor current falls to zero at the end of each PWM pulse.
Both the DCM and CCM power factor correction circuits use a fixed PWM frequency. Howev-
The main advantage of DCM power factor correction is that the inductor is fully magnetized and er, if the frequency is also made variable and synchronized to the input half-cycle, then the
de-magnetized during each PWM cycle, so the inductor current falls to zero at the end of each inductor current can be adjusted so that it only just touches zero at the end of each PWM
pulse. The switching transistor then switches on at zero voltage/zero current, so it is very effi- pulse, whatever the input voltage is during the half-cycle (this is called boundary conduction
cient and almost lossless. Also, the recovery speed of the boost rectification diode is not critical. mode (BCM) or critical conduction mode(CrCM).
The disadvantage of this method is the high EMI generated from the high peak cur-
rents of the chopped input waveform. A discontinuous PFC circuit needs a very good in-
put EMC input filter to meet the regulatory conducted interference limits. The PFC choke
must also be capable of handling the high peak currents, so the choke is large and heavy.
A solution to the EMC problems of DCM power factor correction is to use a continuous con-
duction power factor correction controller. This is the same circuit as above, but the induct-
ance is increased so that the current in the choke varies only slightly above and below the
ideal sinusoidal waveform. Typically, the CCM current ripple is chosen to be around 20%-40% Fig. 7.9: Boundary or Critical Conduction mode (CrCM)
of the average inductor current. Again, the PWM frequency is constant:
The inductor current is shown in black, the input voltage in red and the average input current in
blue. The inductor current falls to zero at the end of each PWM pulse and the PWM frequency
varies.
With CrCM control, the switching losses in the transistor and the recovery losses in the diode
are as low as in the DCM circuit plus the inductor can be made smaller than in the CCM circuit
because the peak currents are lower.
Fig. 7.8: Continuous conduction mode (CCM) The disadvantage is the variable frequency PWM requires EMC filters that are effective over
a wider range of frequencies.
70 71
15 15 15
All three solutions have the same average inductor current, but the peak-to-peak inductor Interleaving also has the advantage of sharing the output current across two inductors and
current in the CrCM is a compromise between the very high levels of the DCM inductor and two diodes, thus allowing either higher output currents or improved operating temperatures.
the very low levels of the CCM circuit.
L1
D5
L L2
7.2.4 Mixed-Mode PFC Q1 D6 V+
R1 R3
Q2
Interleaved
There are many PFC controllers on the market that are capable of switching between different
D1-D4 PFC Rload
modes of operation according to the operating conditions of the converter. A chosen value of Controller Cout
choke that works well with a CCM controller at low input voltage (90 – 125VAC) may transition R2 R4
to DCM due to the lower input current at higher input voltages (180-265VAC), thus harming N V-
the power factor correction figure. To avoid having to make a compromise, the controller can
be made variable frequency/variable PWM to keep the circuit in CCM/CrCM throughout the
input voltage range. There are also powder core chokes called “swinging chokes” that change Fig. 7.12: Interleaved PFC circuit
their inductance according to the current though them. At low currents, the inductance in-
creases, thus keeping the PFC in CCM/CrCM whatever the operating conditions. An interleaved PFC is mainly used for high power AC/DC converters where the high input
current would make the EMC input filter very bulky and more expensive than the extra circuitry
Practical Tip: PFC stages are susceptible to damage from input surge voltages. The bridge of using two CrCM PFC boost converters. The PWM outputs operate 180°C out of phase, so
rectifier will rectify both positive and negative-going surges into a high positive voltage into the although the current in either of the inductors falls to zero at the end of each pulse, the current
PFC choke. The resulting high current can rapidly saturate the core so that the choke no flowing into the PFC capacitor is continuous (current flows alternately through D1 and D2).
longer behaves like an inductor, but lets all of the surge voltage through. The PFC diode now
has to cope with the high charging current (sometimes hundreds of amps) into the PFC capac- The output voltage ripple is significantly lower than is possible with a single stage PFC and
itor and can quickly fail. The solution is to add a high current diode in parallel with the PFC with a 50% duty cycle, the interleaved topology has zero input current ripple as the two
choke and diode. Under normal operating conditions, the PFC voltage will be higher than the PFC stages cancel out. Besides the
1
input voltage and the bypass diode will be reverse biased. Under surge conditions, the input increased cost, the biggest disad-
0,9
exceeds the PFC voltage and it will conduct, relieving the stress on both the PFC diode and vantage is that all of the components
0,8 Single phase
PFC choke as well as reducing the voltage across the bridge rectifier. used must be very carefully matched boost converter
0,7 Two phase interleaved
to maintain the same performance boost converter
PFC Choke Dbypass 0,6
L over all operation conditions.
L 0,5
D5 V+ 0,4
R1 Q1 R3
0,3
PFC
D1-D4 Controller Rload 0,2
Cout Fig. 7.13: Comparison of the duty
R2 R4 0,1
cycle vs input ripple current for
N V- 0
single phase and interleaved 0 20 40 60 80 100
Fig. 7.11: Active PFC with surge bypass diode phase PFC boost circuits Duty Cycle [%]
72 73
The transistors Q1 and Q2 cannot be MOSFETs because the reverse recovery losses would be
7.2.6 Bridgeless (totem pole) PFC too high. The switching delay would cause shoot-through and large current spikes during AC ze-
ro-crossing. One solution is to use JFET transistor in a cascode configuration with a MOSFET:
The bridgeless or totem-pole PFC topology is becoming more popular because of its very
high efficiency. The bridge rectifier diodes are replaced by two high voltage transistors that
alternately switch at the mains frequency to rectify the input. The diode forward voltage drops D
are therefore eliminated and the internal body diodes of the transistors aid the current flow
SiC JFET
and increase the efficiency.
Si MOSFET
It is usual to use different transistor types for the slower 50Hz switching and the high frequen-
cy PFC switching. = G
Q2 Q3 Q2 Q3 S
LPFC LPFC
AC
C RL AC
C RL
Fig. 7.15: SiC/JFET cascode
The JFET is normally on and has a gate input that is effectively grounded. When the MOSFET
Q1 Q4 Q1 Q4
is off, the MOSFET VDS rises until the JFET VGS is sufficiently negative to switch the JFET
off. The supply voltage then appears almost entirely across the JFET. When the MOSFET
is switched on, the VDS drops to close to zero and the JFET turns on. The advantage of this
arrangement is that the JFET gate and the MOSFET VDS and VGS are all close to zero, so the
reverse recovery, Coss and Miller capacitance losses are also close to zero. The switching
Q2 Q3 Q2 Q3
LPFC LPFC speed is vastly improved.
AC
C RL AC
C RL More recently, high electron mobility transistors (HEMT) such as GaN FETS are being used to
replace the cascode as they are ideal for such totem-pole topologies (very fast switching slew
rates, no body diode, and low gate capacitance). Overall PFC stage efficiencies in excess of
Q1 Q4 Q1 Q4
99% are possible with GaN FET totem pole designs.
Fig. 7.14: Bridgeless Totem-Pole PFC topology and switching current paths The following bridgeless totem pole PFC circuit uses two half bridge power stages to replace
the bridge rectifier and the PFC switcher normally required by AC powered applications. The
The single switching FET in the previous PFC designs is replaced by two FETs Q1 and Q2. During synchronous rectifier consists of two silicon MOSFETs alternately switched with a 50% duty
a positive mains half-cycle, Q4 is switched on, Q3 is off, Q1 is operated with a PWM signal to boost cycle at 50/60Hz in time with the AC mains input. This creates a rectified output without the
the output voltage and Q2 is operated with the inverted PWM signal to act as a rectifier. During a need for an input bridge rectifier. The PFC half-bridge circuit runs with a higher frequency and
negative mains half-cycle, Q3 is switched on, Q4 is off, Q2 is operated with a PWM signal to boost variable duty cycle PWM signal to perform the power factor correction function using low loss
the output voltage and Q1 is operated with the inverted PWM signal to act as a rectifier. GaN transistors. With the low component count, the gate driver components can be placed
closer together and parasitic inductances and stray capacitances minimized. Two RP-1506S
As Q3 and Q4 are switched at a low frequency (50/60Hz), they do not need to switch quickly converters and a dual channel digital isolator are used to create the fully isolated high-speed
and can be regular MOSFETS. Diodes are placed in parallel to help increase the efficiency half-bridge GaN gate driver circuit for the PFC with a BOM count of only 20 parts.
by sharing the peak current, but the power switching is done with the MOSFETs. The forward
voltage losses of the conventional bridge rectifier are thus eliminated, so the rectification loss- The 50/60Hz AC synchronous rectification half-bridge runs at a much lower frequency, so
es can be very low (<1%). lower-cost MOSFETs can be used without sacrificing overall efficiency or performance. The
isolated +15V high-side MOSFET gate drive power is supplied by a RP-1515S converter. All
74 75
three DC/DC converters used offer 5.2kVDC isolation and <10pF isolation capacitance. The loop (using the IL input) to maintain accurate regulation with a high power factor. Such control
low-side MOSFET gate driver can be supplied directly from the 15V on-board power supply complexity means that only digital controllers are really suitable for this topology.
(no isolation is needed).
In addition, a data link to the digital LLC converter controller allows interactive operation to
Isolation Isolation change the response characteristics according to load conditions.
Barrier Barrier
+15V +Vin
V+
RP-1506S +Vout
+6VB PFC Choke One of the biggest disadvantages of totem-pole PFC stages is that the neutral connection is
OVP D1
DC/DC
-Vin 1µF 6V8
Zener D2
L
AC
switched at 50/60Hz. This creates serious EMI issues, especially if the neutral is connected
0V -Vout +Vin +15V
+15V +Vin GND
Supply +15Viso to ground in the switching cabinet. A solution to this problem is to use neutral point clamping
+Vout
RP-1515S
+6VA
(NPC), a variation on the multilevel-type topology.
D1 & D2 are surge
N DC/DC
RP-1506S +Vout protection diodes 1µF
-Vin
DC/DC OVP Com -Vout
1µF 6V8 0V
-Vin
Zener
0V -Vout
V+
VDDC Figure 7.18 shows a simplified NPC circuit. Transistors Q3 and Q4 switch at the mains fre-
GaNFET MOSFET
VGC quency and Transistors Q1 and Q2 switch at the PFC frequency. Two PFC capacitors are
VDDA D D VSS C
VGA G G
UVLO
used to hold the positive and negative rectified output, so the PFC bus voltage is double that
20R
of a standard totem-pole PFC stage. The neutral connection is unswitched and therefore
4. 7µF RG 0V
50R
PFC 22pF UVLO VSS A 20R
S S
Logic Opto-
PWM
0V
+
Overlap
VDDB GaNFET D D
MOSFET
+15V coupler stays quiet.
Protection VG B G G 50/60 Hz
20R VGD
DT
VSS B 20R Square
S S
Figure 7.19 shows a further variation where the two diodes D1 and D2 are replaced by addi-
UVLO RG
4.7µF
0V
UVLO Wave
COUT VSS D
0V
GND tional switching transistors. The advantage of this modification is not just lower overall losses
but the possibility to use adaptive PWM control to balance out the stresses in both legs of the
Fig. 7.16: Simplified circuit of a bridgeless combination GaN/MOSFET PFC circuit.
The disadvantages of the bridgeless PFC are the extra complexity (four isolated FET driv- The disadvantage of NPC is a more complex control scheme, higher voltage rated transistors
ers are required), the accuracy of the timing needed (especially during mains zero-crossing, and the need for isolated drivers, so this topology is mostly used for high power PFC stages,
where it is important to introduce enough dead time to avoid shoot through, but not too much where the savings in the EMC input filter outweigh the additional costs.
as this will harm efficiency) and the difficulty of synchronising the circuit to a noisy mains
supply. In addition, the controller IC needs to have a current transformer or Hall Effect sensor
to be able to monitor the bidirec-
tional inductor current accurately Q2 Q3
LPFC
enough to maintain a high effi-
R3
CT
C
ciency over the entire load and R1 To LLC
AC
stage
supply voltage range. R2
R4
Q1 Q4
Gate
Drivers VDC
Q1 GPIO
Aux.
Fig. 7.17: Block diagram of a PWM x 2
Power
Q2 Digital Supply
bridgeless PFC controller (with IL Q3 PFC Controller
VAC GPIO x 2
digital control and compensa- Q4 GPIO x 2
Data Link to LLC
tion) Controller Fig. 7.18: Simplified NPC topology Fig. 7.19: Simplified active NPC topology
This digital controller uses three control loops: a voltage control outer loop (using the Vdc
input), a sine wave reference loop (synchronized to the Vac input) and a current control inner
76 77
Chapter 8 One of the advantages of a flyback transformer design is that the turns ratio decides the fun-
damental input/output voltage ratio (Eq. 8.1). The variable mark-space PWM controller on the
input power stage can then easily compensate for any variation in input voltage or output load.
AC/DC Converter Topologies Duty cycles higher than 0.5 are possible with the flyback topology, but in general should be
avoided to reduce the average current in the output diode.
(This section is largely based on the DC/DC book of knowledge discussion of the different
topologies, but as DC/DC and AC/DC share several conversion topologies2 , it is reproduced Eq. 8.1:
here for the sake of completeness).
In the family of isolated AC/DC converters there is a wide variety of topologies available, but So, for a universal input AC/DC with a minimum input range of 90VAC (no PFC, so 126VDC
only some of them are applicable to the discussion of modern AC/DC designs. when rectified) and an output voltage of 24VDC, the transformer turns ratio would be chosen
This section will limit its consideration to flyback (single and doubled ended versions), forward to be 5:1.
(active clamp, single and double ended versions), push-pull, bridge converter (half-bridge At this input voltage, the PWM would have 50% duty cycle. At the highest input voltage of
and full bridge) and resonant (ZVS, LLC) topologies. In these types of isolated converters, 264VAC (370VDC when rectified), the PWM would have a 25% duty cycle. The relevant rela-
the transfer of energy from input to the output is performed via an isolating transformer. Line tionships are as follows:
voltage and output load regulation is performed by a PWM controller. Ideal components are
again assumed. Eq. 8.2:
8.1 Single-Ended Flyback Where the reflected output voltage, VOR, equals (Vout + VDrop,D1) multiplied by the turns ratio, N.
Q1 Current Flow, Q1 closed With output voltage or current monitoring and an isolated feedback path (typically via an opto-
Current Flow, Q1 open
coupler) a very stable regulated output can be generated. But flyback converters can also be
Fig. 8.1: Isolated flyback converter simplified schematic primary side regulated by monitoring the auxilliary winding waveform and using the knee-point
to detect when the secondary current has reached zero. This eliminates the optocoupler and
For a power supply without PFC, the rectified mains input voltage will be between about reduces the component count still further.
126VDC and 320VDC, but the output voltage is typically between 3.3V and 24V. This is a big
voltage difference! If a PFC front end is used, the rectified input voltage will be even higher The disadvantage is that the transformer core needs careful selection, the air-gapped core
and the difference even greater. should not saturate even though there is an average DC current flowing through the trans-
former and efficiency can be lost if it has a large magnetic hysteresis. Also eddy current losses
in the windings can be a problem due to the high peak currents. These two effects limit the
2
Note: DC cannot be converted directly via a transformer, so all DC/DC converters are essen- practical operational frequency and power range of this topology.
tially DC-to-AC//AC-to-DC couplers. On the other hand, AC switched mode power supplies run
at a higher frequency than the mains input, so they rectify the AC input to DC and are AC-to-
DC-to-AC//AC-to-DC couplers. It is not surprising that they have many elements in common.
78 79
Finally the large inductive spike on the primary winding when S1 is turned off places a lot of 2. The switch-on losses are proportional to the Ceq capacitance. The Coss component is
strain on the switch – there is a resonant oscillation caused by the interaction between the mainly due to the junction capacitance of the internal body diode, so it cannot be re-
leakage inductance of the transformer, the primary winding capacitance and the body-diode duced, but the parasitic capacitances in the transformer and layout usually exceed Coss
capacitance of the switching FET. As all of these values are very small, the resonant frequen- anyway. The transformer can be wound for low leakage capacitance at the expense of
cy is very high – typically in the region of tens of MHz. This not only causes serious EMC higher leakage inductance (see point 4).
problems but can induce very high currents to flow:
3. The switch-on losses are proportional to the square of VDS, so soft-switching techniques
such as ZVS (Zero Voltage Switching) will substantially reduce the switch-on losses.
Eq. 8.3: Peak Voltage Stress=Vin+Reflected Secondary voltage+Resonance Voltage
4. The switch-off losses are dependent on the rate of change of VDS (dVDS /dt), which in turn is
affected by the primary leakage inductance of the transformer, Llk1. The transformer can be
wound for low leakage inductance at the expense of higher leakage capacitance (see point 2).
Where VF is the forward voltage drop across the secondary diode, N is the turns ratio, Ipri is the 5. The switch-off losses are also dependent on the reflected output diode recovery current
primary current, Llk is the total leakage inductance, Cpri is the primary winding capacitance and rate (diD/dt), which in turn is dependent on the primary-secondary leakage inductance of
Coss is the FET drain-source capacitance. the transformer, Llk2 and the turns ratio, N. A fast recovery diode on the output side will
Cj reduce the switch-off losses on the primary side.
Llk2
N:1
D1 The effect of these parasitic elements means that the switching voltage and current wave-
T1
forms will not be clean:
Lmag Cpri C2 RL
Vout
Vin,DC
AC C1
Llk1
Q1
Coss VDS
Isecondary
Switching losses arise on both switch-on (the current through the FET starts to rise before the
voltage across the FET falls to zero) and on switch-off (the voltage across the FET starts to
rise before the current through the FET falls to zero) according to the following relationships: Iprimary
Eq. 8.4:
80 81
If needed, a resistor in series with the diode can be added to damp the resonant peak between the
8.1.1 Single-ended flyback snubber networks primary leakage inductance and the snubber capacitor. This is called a R2CD snubber network.
To absorb this damaging high frequency parasitic oscillation, a snubber is often required. The For low standby current applications, the RCD snubber can be replaced by a TVS diode in
most common arrangement on the high side is a RCD (Resistor-Capacitor-Diode) snubber: series with an ultra-fast recovery diode and a damping resistor. It is a more expensive solu-
tion, but avoids the RCD snubber dissipation, which is constant irrespective of load. Unlike the
N:1
RCD snubber, a TVS snubber needs an ultra-fast diode for high efficiency.
RS CS T1 D1
C2 RL N:1
DS T1 D1
TVS
AC RS C2 RL
C1
DFR
Q1
AC
C1
Q1
Fig. 8.4 Single-ended flyback with RCD snubber circuit (shown in blue)
The capacitor and resistor absorb the energy of the resonance ringing and cause it to decay Fig. 8.5: Single-ended flyback with TVS snubber network (shown in blue)
more rapidly. The recovery diode is typically a standard power diode (not a fast diode) as a
relatively slow reverse recovery time (Trr) also helps to damp out the ringing. The negative Practical Tip: When using quasi-resonant primary side regulation, care must be taken not
current that flows during this recovery time allows the snubber capacitor to damp the ringing to over-damp the resonances with snubber networks, because the regulation circuit needs to
more effectively by absorbing current on the positive cycle and delivering current on the neg- track the first or second valley of the Lm/Coss DCM resonance.
ative cycle despite the diode rectification.
The power dissipated in the snubber network is highest at minimum Vin and full load: A practical example
Consider a 10W AC/DC power supply with the following specifications:
Eq. 8.6:
Vin = 100-240VAC nominal (no PFC)
Where ƒ is the switching frequency and VCS is the voltage across the snubber capacitor Cs. Vout = 5V @ 2A, VD = 0.5V
Operating frequency = 50kHz
Practical Tip: Vcs can be adjusted by changing the value of the snubber capacitor. If the ca- Turns ratio = 12
pacitor is too small, the voltage will be high and the snubber ineffective. If the capacitor is too Lk = 750nH (by measurement)
large, then VCs will be small, but the power dissipation will be high. For optimum results, Cs Peak Ipri = 400mA (by measurement)
should be chosen to be have a VCs equal of twice the sum of n (Vout + VD). 450V rated FET with Coss = 20pF
Primary winding capacitance = 10pF (by measurement)
The optimum value of the snubber capacitance is also dependent on the snubber resistor, Rs,
as they both operate together to absorb the ringing energy. For reliability, the peak voltage stress on the FET should be below 80% of its rated voltage. At
maximum Vin, the peak voltage stress (from equation 8.2) is:
Eq. 8.7:
Peak Voltage Stress,
Where ∆VCS is the ripple voltage across the snubber capacitor (typically chosen to be 5%-
10% of VCs). RS can be found from the relationship:
Eq. 8.8:
82 83
Although 437V is within the rating of the FET, it is much higher than 80% of VDSS, so the relia- Practical Tip: If a current sense resistor is used, the snubber must be placed across the tran-
bility will be poor as the transistor is close to its voltage stress limit. Adding an RCD snubber sistor only and not from the drain connection to ground, otherwise the sense resistor will be
will significantly improve the lifetime of the FET. affected by the snubber discharge current. One way to calculate the required snubber compo-
nents is to measure the transformer primary inductance with the outputs short circuited using
First we choose VCS to be twice n(Vout + VD) = 2 x 12(5V + 0.5V) = 132V an inductance meter (or a frequency response analyser if you have one) and use an oscillo-
scope to measure the ringing frequency ƒr (hold the probe close to, but not touching the drain
Next, we define the snubber resistor, Rs, from Equation 8.8: pin – the probe will pick up the signal without damping it with the probe’s own capacitance ;-)
The snubber resistor is then:
Eq. 8.9:
The power dissipation in the snubber resistor will be V²/R = 132V²/22k ohm = 0.8W. And the snubber capacitor:
Choose a resistor with at least double this power rating or place two 1W resistors in parallel.
Eq. 8.10:
With 10% ripple, the snubber capacitor, Cs, will be from Equation 8.7: The power dissipation in the snubber resistor needs also to be checked:
Eq. 8.11:
Finally, the diode should be chosen to manage the peak voltage stress (choose at least dou- Where f is the switching frequency (not the ringing frequency) and VDS is the peak FET voltage.
ble the rated voltage) and be able to cope with the diode power dissipation.
Practical Tip: Another way to determine the ringing snubber component values is by exper-
Suitable components for the snubber network would be a 22k/2W resistor in parallel with a iment:
10nF/200V capacitor and a 1N4004 diode. 1. Find out ƒr using the method above
2. Add capacitance (MLCC’s are best) across the FET until the frequency halves. The stray
capacitance is then equal 1/3 of the additional capacitance e.g. if adding 62pF halves the
8.1.3 Ringing snubbers frequency, then Coss ≈ 20pF
3. Calculate the stray leakage inductance using the equation Eq. 8.12:
Besides reducing the voltage stress on the main switching transistor, snubbers can also be
used to damp ringing in the primary FET or secondary rectifier diode. Eq. 8.12:
N:1
T1 D1 4. The snubber resistor is then the same as the characteristic impedance, Z:
C2 RL
Eq. 8.13:
AC 5. The snubber capacitor can be chosen to be four to five times Coss (the leak-
C1
Q1 CS age capacitance varies a lot in practice, so by choosing a larger capacitor, we
RS can be sure that the ringing is properly damped - including production tolerances)
Fig. 8.6: Single-ended flyback with primary snubber (low side snubber)
Ringing also occurs on the secondary output diode when it becomes reverse biased, so it can
The low side snubber provides damping for the LC resonance of the switching FET caused be useful to also put a snubber across it:
by the interaction of the primary leakage inductance and the MOSFET junction capacitance
when the FET is turned off.
84 85
CS RS 8.1.2 Active clamp and regenerative snubbers
N:1 RC snubbers are dissipative circuits: the energy stored in the leakage inductance is diverted
T1 D1 by the capacitor and dissipated in the snubber resistor. This consumes between 2%-5% of
C2 RL the total power so the resistor and diodes must be adequately dimensioned to cope with their
internal temperature rise.
A more efficient solution is to use active clamping and store the excess energy in a capacitor
AC so that it can be returned to the next cycle. There are two ways to do this; a low-side p-channel
C1
clamp in series with the main switch or a high-side n-channel clamp to replace the clamping
Q1
diode.
Vin,DC Vin,DC
T1 T1
Fig. 8.7: Single-ended flyback with output diode snubber (shown in blue) CS
Lmag Lmag
Q2
The peak ringing voltage across the secondary side diode if a snubber was not fitted would be:
Gate Drive
Llk CS Llk
Eq. 8.14:
Q1 Q2 Q1
Dead
Where Lk2 is the secondary leakage inductance and Cj is the junction capacitance of the Time
diode.
Gate Drive Gate Drive
For a typical power diode, the junction capacitance will be around 5pF. For a typical 12:1 turns Fig. 8.8: Single-ended flyback active clamp configurations: high side and low side con-
ratio transformer, the secondary leakage inductance would be around 8nH (very approxi- figurations
mate). This would give a ringing voltage across the secondary diode of:
8.1.2.1 High-side active clamp
The high-side solution shown in figure 8.8 requires an isolated gate driver but uses a lower
The output capacitor will absorb most of the ringing voltage if it has a low ESR and the PCB cost n-channel MOSFET. Q2 is driven in antiphase to the main power transistor Q1 but with a
track inductance is not too high, but the diode must be able to survive this peak reverse voltage. dead time between cycles to avoid shoot-through.
Adding the secondary side snubber not only dissipates the energy safely and protects the Vin,DC V in,DC Vin,DC Vin,DC
Cin CS T1 Cin CS T1 Cin CS T1 Cin CS T1
diode, but reduces the EMI generated by the secondary ringing which can be in the order of Cw
Q2 Q2 Q2 Q2
tens of MHz. On the other hand, as the ringing frequency is much higher than the switching Iclamp Iclamp
frequency, it is relatively easy to filter out without incurring a high power dissipation loss. Ipri
Dead
Q1 Dead
Q1 Dead
Q1 Dead
Q1
Time Time Time Time
Typical values for secondary snubber components are 4x the junction capacitance for the Gate Gate Gate Gate
Drive
capacitor and a resistor value equal to the term. Drive Drive Drive
86 87
Phase 1. Q1 on. Q2 off. Energy is stored in the magnetising and leakage inductances. Vin,DC Vin,DC Vin,DC
Cin T1 Cin T1 Cin T1
Phase 2. Q1 off. Q2 off (dead time). The clamp capacitor starts to absorb the voltage over-
shoot via the Q2 body diode. Iclamp Iclamp
CS Ipri CS CS
Phase 3. Q1 off. Q2 on. The clamp capacitor charging current is taken over by the FET, re- Q2 Q1 Q2 Q1 Q2 Q1
ducing the resistance and shorting out the over-voltage spike current into the clamp capacitor.
Gate Gate Gate
Once the leakage inductance energy has been absorbed, the current in the clamp capacitor Drive Drive Drive
reverses and the energy is returned to the Vin capacitor. Phase 1 Phase 2 Phase 3a
Phase 4. Q1 off. Q2 off (dead time). Any remaining energy in the circuit pre-charges the wind-
ing capacitance ready for the next cycle. Vin,DC Vin,DC
For higher power applications, an external diode can be placed in parallel with Q2 to reduce
Cin T1 Cin T1
the current flowing through the body diode before the transistor is fully enhanced.
The voltage across the high side clamp capacitor is proportional to the duty cycle and Vin:
CS CS
Eq. 8.15 Q2 Q1 Q2 Q1
Gate Gate
Practical Tip: Equation 8.15 shows that at the lowest Vin, where the duty cycle will be largest, Drive Drive
the factor (D/D-1) will approach 1. The voltage across the clamp capacitor will be equal to Phase 3b Phase 4
Vin,min. At the maximum input voltage, the duty cycle will be low and the factor (D/D-1) will be
much less than 1. Therefore, the clamp capacitor does not need to be a high voltage type. Fig. 8.11: Single-ended flyback low-side active clamp current flow
Phase 1. Q1 on. Q2 off. Q1 switches on in near-ZVS. Energy is stored in the magnetising and
VSW
leakage inductances. The voltage across the clamp capacitor is zero.
Phase 2. Q1 off. Q2 off (transition time). The energy stored in the leakage inductance is divert-
I CLAMP ed into low side clamp capacitor by the body diode of Q2 (the body diode is forward biased).
The voltage across Q2 stays at one diode drop.
Phase 3a. Q1 off. Q2 on. Q2 switches on in near-ZVS. The clamping capacitor rapidly ab-
Im sorbs the energy stored in the leakage inductance via the low RDSon impedance of Q2.
Phase 3b. Q1 off. Q2 on. Once the energy in the leakage inductance has been fully dissi-
Fig. 8.10: Single-ended flyback high-side clamp current. pated, the current reverses and energy is transferred from the clamp capacitor back into the
input capacitor.
8.2.1.2 Low-side active clamp
Phase 4: Q1 off, Q2 off. The body diode of Q1 holds the voltage across Q1 to one diode drop.
The p-channel solution shown in figure 8.11 is easier to drive but needs a more expensive FET. Any remaining energy is returned to the input capacitor via this body diode.
Q2 is driven in phase with the main power transistor. As the active clamp is p-channel and the The voltage across the clamp capacitor is proportional to the duty cycle and Vin:
main switch is n-channel, Q2 is always off when Q1 is on and vice-versa. A dead-time circuit is not
needed as there is no danger of shoot-through, but the different threshold voltages of n-channel Eq. 8.16
and p-channel FETs means that there is a transition period when both transistors are off.
This solution has the advantage that both Q1 and Q2 operate in near ZVS.
88 89
Practical Tip: Equation 8.16 shows that at the highest Vin, where the duty cycle D will be
smallest, the factor (1/1-D) will approach 1. The voltage across the clamp capacitor will be
equal to Vinmax. At Vinmin. the duty cycle will be large and the factor (1/1-D) will be much high- Eq. 8.17:
er than 1. Therefore, the clamp capacitor needs to be a high voltage type.
N:1
T1 D1
DS1 C2 RL Vin
AC CS
C1 Q1
DS2 Vsw
Fig. 8.12: Single-ended flyback with regenerative snubber using an auxiliary winding Fig. 8.13: QR valley switching
tied to ground
Another advantage of QR operation is that the PWM period timing changes slightly with each
cycle depending on the accuracy of the valley detection circuit. This timing jitter flattens out
8.3 Quasi-resonant flyback converter the EMI spectrum and reduces the peak EMI levels. A reduction of 10dB in the conducted
interference levels can readily be achieved compared to a conventional flyback circuit. A
A Quasi-Resonant (QR) converter can be made to work with most AC/DC topologies, but it is disadvantage of QR operation is that the PWM frequency is load-dependent and frequency
most commonly used as a single-ended flyback. The main difference is that the QR converter limiting or valley-lockout circuits are needed to cope with no-load conditions.
PWM timing is dependent on the switch voltage minima rather than on the output voltage
alone. A standard flyback controller has a fixed PWM frequency which defines when the next 8.4 Half-Bridge Resonant Mode converter
cycle starts, but the QR uses a free-running oscillator with variable off time.
A further development of the QR converter is the fully resonant mode converter design. A
As in the standard flyback topology, the QR topology PWM controller turns on the switch ON Resonant Mode (RM) converter can be made with series resonance, parallel resonance or
to store energy in the transformer core and then turns the switch OFF to allow the energy to be series parallel resonance (also known as LLC) topologies, but the half-bridge LLC circuit of-
transferred to the secondary. Once the current in the output rectifier diode has fallen to zero, then fers particular advantages in resonant mode, so for the sake of simplicity, only this topology
both input and output windings currents will fall to zero. Any remaining energy in the core will be will be considered.
reflected back into the primary which will start to resonate at a frequency dependent on the pri-
mary inductance, Lp, and the lumped drain capacitance, CD, consisting of the sum of the switch The objective of a resonant mode converter is to add sufficient additional capacitance and
capacitance, the coupling capacitance between the windings and any other stray capacitances. inductance so that the resonant tank allows Zero Voltage Switching (ZVS). The advantage of
ZVS is extremely low losses.
90 91
Additional pulse-mode circuitry may be needed for no-load operation. Although the LLC load
range theoretically includes zero load, in practice component tolerances can make the con-
Q2 D2 verter unstable with no load.
Lr T1
D3
C out Finally, the side-by-side transformer construction requires careful design if the creepage and
Cin Cr RL clearance separations required for safety are to be met.
AC Lm
8.5 Full-bridge resonant mode converters
Q1 D1
D4
8.5.1 Phase-shifted resonant full bridge
Fig. 8.14: Half-bridge LLC resonant mode topology
A phase-shifted full bridge resonant converter uses a conventional full bridge topology with
This topology has two resonant frequencies. The first being the series resonance tank formed the addition of a series inductor on the input. The two pairs of switching transistors are driven
from Cr and Lr and the second the parallel resonance tank formed by Cr and Lm+Lr. Typically, with two fixed 50% duty cycle PWM signals which are then phase shifted to control the power
both Lm and Lr are wound side-by-side on the transformer core to reduce the space required. delivery. (figure 8.15). If the overlap between the two 50% duty PWM signals is low, then only
The double resonant frequencies of an LLC converter can be calculated from Equation 8.17: a small amount of energy is transferred across the transformer. If it is high, then full power is
transferred. Regulation is thus achieved by shifting the phase of the two PWM signals alone.
Eq. 8.18:
Low Power High Power
QA QC
QA
D1
PWM1 PWM2 Lr
QB
T1
QC
The advantage of the double resonances is that one or the other takes precedence according QD
QB QD
to load. So while a series resonant circuit has a frequency that increases with reduced load D2
Transformer
and a parallel resonant circuit has a frequency that increases with increasing load, a well-de- PWM1 PWM2 Primary
Voltage
signed series parallel resonant circuit has a stable frequency over the whole load range.
The switching frequency and values of Lr and Cr are chosen so that the primary winding in in Transformer
Primary
continuous resonance and sees an almost perfect sinusoidal waveform. The two half-bridge
Current
switches Q1 and Q2 are operated in antiphase. When the FETs are activated, the voltage
across them is actually negative. The Gate-Drain voltage is only the internal diode drop and Fig. 8.15: Simplified phase-shifted resonant full bridge schematic and the wave forms.
the gate drive current is thus extremely low. As the voltage transitions to positive, the FETs The PWM signals are fixed frequency and fixed 50% duty cycle. The blue shaded
are already ON and start to conduct as the sinusoidal voltage passes through zero. areas represent the amount of overlap between the two PWM drive signals which
controls the amount of power transmission
Combined with the low switching losses and the low transformer losses due to the sinusoidal
drive waveform, conversion efficiencies exceeding 95% are readily achievable. Another ad- The advantages of the phase-shifted full bridge topology are that due to the fixed-frequency
vantage is that the EMI emissions are extremely low as the entire power train is sinusoidal. resonant operation, all of the transistors switch at zero voltage (ZVS) or near zero voltage, so
switching losses are very low. The transistor drive circuit is simplified because only two fixed
The disadvantages of the LCC converter topology is that the required inductances can be high frequency PWM signals which can be very easily generated from flip-flop circuits (50% duty
in order to get a stable resonant frequency with a good Q factor (i.e. low Cr). The converter cycle) are needed to drive all four switches. The resonance inductor, Lres, can be omitted if the
must also be tuned to operate below the maximum possible gain to allow it start up without inherent resonance between the transistor’s Coss capacitance and transformer leakage induct-
problems. Typically a working gain of 80-90% of the maximum is a safe margin. ance is sufficient to ensure ZVS operation. In this case, both D1 and D2 could also be omitted.
92 93
Output regulation can be done by either voltage mode, average current or peak current control
(by adding a current transformer in series with the high voltage supply), all without changing
the basic topology. Peak efficiencies of over 95% are readily achievable with this topology, QA QC
D1 D3
which makes it especially suitable for higher power AC/DC designs. T1
Lr D5
C out
The disadvantages of the phase-shifted full bridge topology that the PWM signals must be C in Cr RL
very precise or have either fixed dead-bands which reduces efficiency or have variable dead- AC
QB QD
band delays to avoid shoot-through at low loads, making the PWM drive not so simple in prac- D2 D4
tice. Freewheeling (turning on QA + QC or QB + QD simultaneously to circulate the current)
D6
is often necessary to clamp the reflected load current and to ensure ZVS conditions which
further complicates the drive control and reduces efficiency. Such operating condition-based
switching control is often only realizable in practice by microcontrollers running parallel state
machines or expensive mixed-signal controllers with internal logic elements.
Fig. 8.16: Series resonant full bridge with resonant frequency fres
The supply voltage range is restricted because the efficiency is dependent on resonant ZVS
or near-ZVS which is dependent on the square of the supply voltage (eq. 8.19), so a PFC front Unlike the phase-shifted resonant converter, there is no overlap between the PWM signals
end is necessary for a universal mains supply. For higher AC supply voltages (for example, with a defined dead time to avoid any chance of an overlap.
480VAC), it may be necessary to use cascode switching FETs to meet the Vds requirements.
The resonant inductance needed for ZVS turn-on can be calculated from equation 8.19: Power transfer is controlled by changing the PWM frequency above, equal to or below the res-
onant frequency of the Cres and Lres tank circuit. This gives three possible modes of operation:
combination of the transformer leakage and magnetizing inductances exceeds Lres,min under t t t
worst case conditions, then no external inductor is needed.
i5 i5 i5
Practical Tip: In the equation above, note that doubling the AC supply voltage not only in- t t t
creases the numerator, but also reduces the peak current in the denominator by a squared vp vp vp
factor, meaning that a 16 times smaller resonance inductance is needed!
t t t
94 95
Mode 1: Below resonance. The input current leads the switched supply voltage, i.e. the im- The advantage the variable frequency full bridge resonant controller is high efficiency over a
pedance is capacitive. The transistors switch in ZCS mode. wide load range as the topology remains in resonance from full load down to light load.
Mode 2: At resonance. The input current is in phase with the switched supply voltage, i.e. the The disadvantage is that no-load operation is not possible without losing resonant operation
impedance is purely resistive. The transistors switch in ZCS mode and the output voltage is and therefore losing control over the output voltage, so a minimum load is always required.
at its maximum.
This drawback can be eliminated by adding an additional resonance capacitor in parallel with
Mode 3: Above resonance. The input current lags the switched supply voltage, i.e. the imped- the transformer primary winding to make a series-parallel resonant full bridge (figure 8.19).
ance is inductive. The transistors switch in ZVS mode. This topology will stay in resonance from full load down to no-load conditions with good light
The output voltage is at a maximum when the switching frequency is equal to the resonant load efficiency, but requires a PFC front end to provide a stable bus voltage.
frequency:
VDC
Eq. 8.20: QA QC
D1 D3
Lr T1
D5
PFC C out
Cin Crs RL
Where ω is the relative operating angular frequency, , and Q is the quality factor: Front End
Crp
AC
QB QD
Eq. 8.21: D2 D4
D6
Where RAC represents the transformer load.
Fig. 8.19: Series-parallel resonant full bridge converter
The 0.9 factor in the numerator of Eq. 8.20 comes from a relationship of which means
that at resonance, the output voltage is 0.9Vin (refer to figure 8.18)
8.6 Single-Ended Forward converter
Output power can be reduced by changing the PWM frequency either above or below the
resonant frequency, but as ZVS control is optimal for both turn-on and turn-off losses whereas Although the forward converter seems similar to the flyback topology, it functions in a com-
ZCS only helps with turn-off losses, typically an increase in frequency is used to reduce the pletely different way, relying on continuous transformer action to transfer power from input to
output power. output rather than intermittently storing the energy in the magnetic field of the core gap. The
input voltage is converted into a regulated output voltage as a function of the turns ratio of the
Preferred operational area transformer and no gap is needed nor desirable. Figure 8.20 shows the simplified circuit (refer
Vop
0,9vi to the DC/DC Book of Knowledge for the voltage and current waveforms and explanation of
the transfer function).
Small Q (a) output voltage
As the power transfer is continuous over time, we speak of volt-seconds. The volt-seconds
High Q during the ON time must not exceed the volt-seconds during the OFF time, otherwise the
f- fr/fs core will eventually saturate due to a process called flux walking (refer to the DC/DC Book of
Capacitive impedance Inductive impedance Knowledge, Chapter 10). This is guaranteed by adding a reset winding that ensures that the
[Zs ] core is fully demagnetized at the end of each switching cycle.
(b) Impedance magnitude
As the reset winding ensures that the core fully desaturates at the end of each cycle, the duty
cycle can not be higher than 50% maximum, unless a reset winding with a different turns ratio
f= fr/fs
is used. This limits the input voltage range of the converter to typically 2:1, making a universal
Fig. 8.18: Output voltage control by increasing the PWM frequency above resonance input AC/DC forward converter more difficult to design than a flyback. Thus AC/DC forward
converters are usually used with a PFC front end to give a stable DC bus voltage to work from.
96 97
The disadvantages of the forward topology are a more complicated transformer construction
Lout with an additional resest winding which makes meeting the required creepage and clearance
VDC separations more troublesome and an increased component cost as an output inductor, Lout, is
D1 needed for each output. If a bipolar (±) output is required where the positive and negative output
DReset voltages are complementary, then a transformer style (two inductors sharing the same core)
Cout RLoad
D2 output inductor can be used to save costs. This is not a true transformer but two mutually cou-
PFC Np Nr Ns
Front End pled inductors, so it is important that the windings are bifilar wound to get good coupling and the
AC Cin
T1 turns are in the same proportion as the transformer secondaries. This will improve the cross
Q1
regulation and reduce the output ripple considerably compared to two independent chokes.
As a forward converter transformer has a continuous magnetic core, the magnetic field is
more evenly distributed and the associated hysteresis losses and radiated EMI from the con-
centrated fields across a gap in the flyback topology are avoided.
Other advantages are that the lower peak current reduces winding and diode losses and lead
to a lower input ripple is discontinous so high and output ripple current (figure 8.21). The reset
winding transfers excess stored energy back into the PFC capacitor rather than simply having
to dissipate the energy in a snubber network. For the same output power, a forward converter
will therefore be more efficient than a flyback.
Fig. 8.22: Forward converter with bipolar output using a mutually coupled output
Forward Flyback inductor
Converter Converter
Primary
If multiple independent outputs are required, then each forward converter output needs an
Current
Current
Winding
Current output inductor and capacitor, so in this case, the flyback topology would often be a better
time time
choice (but refer also to the current-fed forward converter Section 8.6.2).
As with the flyback topology, snubbers are needed to supress transients to protect the active
components. Unlike the flyback, additional voltage transients caused by leakage inductance
Secondary
between the primary and reset windings need to be controlled. In the conventional forward
Current
Current
Winding
Current clamp topology with the same number of turns on the primary and reset windings, if the volt-
time time
age across the switching transistor when it turns off exceeds double the supply voltage, then
current will begin to flow in the reset winding. However, this transfer of energy is not instan-
taneous. The time taken for the current to transfer from the primary to the reset winding is
Current
Current
slowed down by the leakage inductance between the primary winding and the reset winding.
Cout
time Ripple time During this delay, the voltage on the switching transistor will exceed double the supply voltage
Current and can overstress the transistor. The capacitor Cclamp mitigates this overvoltage by providing
a low impedance path through the reset winding diode (figure 8.23).
Fig. 8.21: Comparison of forward and flyback (DCM) waveforms. The peak currents
in the forward topology are lower and in particular, the output capacitor has a much As the current flows back into the input capacitor, energy is returned into the circuit rather than
lower ripple current being simply dissipated through a clamping resistor, so this is an example of a lossless clamp.
98 99
Lout
VDC Practical Tip: Finding the optimum values for Cssn and Rssn can be done by experiment:
D1
DReset
RLoad 1. Measure the ringing frequency without a snubber
Cout
PFC Np Nr Ns D2 2. Add sufficient capacitance in parallel with D2 until the frequency is halved
AC
Front End
Cin 3. The parasitic capacitance, Cpara is 1/3 of the added capacitance
Cclamp
T1 4. The parasitic inductance can be calculated from Equation 8.23:
Q1
Eq. 8.23:
Eq. 8.22:
Where Lp is the primary inductance, Nps is the primary/secondary turns ratio, Vs is the supply 6. The power dissipated in the snubber resistor can be calculated from:
voltage and Vos is the desired maximum overshoot voltage.
Eq. 8.25:
As the reset diode has to carry the excess energy transferred via the clamping capacitor, it
must be peak current rated > Iload/Nps. The voltage rating must, of course, be higher than 2Vs.
Where fsw is the operating switching frequency, Cssn is the secondary snubber capacitor and
In addition to the primary side clamp, there is often a need to add snubbers across the switch- Vpk is the peak voltage across D2.
ing transistor and secondary diode D2 to control any high frequency ringing that can cause
EMI problems. If the power dissipation in the snubber resistor is too high, then a compromise may be required
to increase the stress on the diode in exchange for reducing the stress on the snubber.
This is because when Q1 switches on, current starts to flow in the rectifier diode D1, until it
has fully charged the output capacitor and now only has to supply the load current. At this
point, the voltage across the diode will increase further due to the reflected input voltage trans- 8.6.1 Interleaved Single-Ended Forward
ferred by the transformer leakage inductance. As no more current can flow in the load, the
current starts to oscillate across the diode D2 junction capacitance. Adding a snubber Cssn + AC/DC forward converters are typically used up to around 200W. Above this power level the
Rssn across D2 will absorb this excess energy and damp the ringing (figure 8.24). high discontinuous primary current cannot be easily handled by increasing the size of the
Lout input capacitor bank and by paralleling up the primary switching transistors. Furthermore, the
VDC
output inductor and capacitor become very bulky.
D1
DReset
Rssn C out RLoad Synchronous rectification (SR) on the output helps reduce the losses, but using SR makes
D2
PFC
Front End
Np Nr Ns Cssn it difficult to parallel the outputs of two forward converters if more power is required (the SR
AC Cin switching can interfere with the load share current balancing circuit).
T1
Rpsn Cclamp
Q1
Cpsn
One solution to high current, low voltage forward converters is to interleave the power stage
using two transformers switched 180° out of phase (figure 8.25). The additional complexity
Fig. 8.24: Forward converter with both over-voltage clamp and primary side and sec- adds some cost, but this is often balanced out by the reduced size of the input and output
ondary side snubbers capacitors as the ripple currents are significantly reduced (each forward converter stage ex-
100 101
hibits a discontinuous RMS ripple current but when added together the overall current is more ON
continuous and approaches DC-see figure 8.26). Only one input and one output capacitor is
needed which also reduces the cost. S1
OFF
Lout1
VDC S2
D1
DReset1 Cout
RLoad IT1
D3
Q I1
DReset2 OA
Interleaved
Controller
Q Np2 Nr2 Ns2 D4
T2 I2
Q2
OA
I1+I2=IOUT
IOUT OA
Fig. 8.25: Interleaved single-ended dual forward converter topology
Fig. 8.26: Interleaved forward converter waveforms. Note the reduced input and out-
The idealized waveform shown below is only valid for a 50% duty cycle. If the duty cycle is put RMS ripple currents (the output current is almost DC)
changed, then the output currents of the two stages are not perfectly complementary and the
ripple currents will increase. Plotted on a graph, figure 8.27 shows the relationship of normalized input capacitor ripple
current to duty cycle. The worst-case input ripple occurs at 0.25 and 0.75 duty cycle.
The input capacitor, Cin, will have a ripple current of approximately:
1.1
1
Eq. 8.26:
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0 D 0.8
Fig. 8.27 Input ripple (normalized) vs. duty cycle for an interleaved forward converter
102 103
The output ripple current follows a different relationship as in Equation 8.27: Practical Tip: One technique to improve the efficiency over the whole load range is to shut
down one or more parallel phases at low loads. This can add as much as 15% to the low
Eq. 8.27: load efficiency by operating the converter as a single-phase forward converter with all of the
current flowing through one power stage only. Another saving can be made by switching off
the synchronous rectification on the secondary side under low-load conditions and relying on
paralleled diodes across the FETs to rectify any residual output current.
Without digital control, such complex feedback mechanisms are impractical, but with a pro-
Plotted on a graph, figure 8.28 shows the relationship of the ripple cancellation factor, K(δ), grammable controller it is possible to ensure efficiencies of better than 95% across a very
(capacitor ripple current divided by inductor ripple current) to the duty cycle. wide load range.
1
In order to get the best of both worlds and have good efficiency at both very heavy load and
0.9
light load, a forward converter topology is often preferred for high power, high efficiency designs.
0.8
0.7
K(D)=
∆I COUT
0.6
8.6.2 Current-Fed Single-Ended Forward converter
∆I 1
k(D) 0.5
0.4
As previously mentioned, a forward converter relies on a storage inductor on the output as
0.3
ideally no energy is stored or lost in the transformer itself. This means that a multiple output
0.2 voltage-fed forward converter rapidly becomes very expensive as every output requires its
0.1 own inductor.
-15 Lout1
1.554x10 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 VDC
D1
Fig. 8.28: Ripple cancellation factor (normalized) vs duty cycle DReset
Cout1 RLoad1
PFC Np Nr Ns D2
Front End
AC Cin
T1
As can be seen from figures 8.27 and 8.28, the interleaved forward converter is most efficient Q1 Cclamp Lout2
if the duty cycle is very close to 0.5. Therefore, a PFC front end is essential to compensate for D3
input voltage variations while keeping the duty cycle constant.
Cout2 RLoad2
D4
If more power is needed, then three input power stages and transformers can be wired in parallel
with 120°C phase shift. With 0.33 duty cycle, the input and output ripple currents will all superim- Lout3
pose to give a very low combined overall ripple current. And if even more current is needed, then
D5
two 180°C interleaved forward converters can be paralleled to deliver 100A. The current bal-
RLoad3
ance between these paralleled stages must be very carefully controlled: even a small deviation Cout3
D6
in the phase current sharing between the stages will increase the ripple currents dramatically.
In practice, some kind of active duty cycle control is needed to compensate for component Fig. 8.29: Triple output voltage-fed forward converter with inductors on each output.
tolerances, temperature variations and dynamic loads. In addition, each of these paralleled
power stages will need their own snubber networks on the primary switch and secondary The current-fed forward topology adds the inductive storage element on the primary side,
diodes which will reduce the overall efficiency, especially at low loads. Interleaving the power making the topology a current converter rather than a voltage converter. This eliminates the
stages reduces conduction losses (the current paths have lower impedances) but increases necessity of an output inductor and makes multiple outputs more commercially attractive. The
the switching losses. At high output currents, conduction losses dominate, but at low output disadvantage is that a current source rather than a voltage source is required, typically real-
currents, switching losses dominate. ized by adding a chopper or buck converter input stage. Output regulation can be achieved by
controlling the PWM signal of the input stage only, leaving the forward converter running with
104 105
a fixed 50% duty cycle (alternatively, the buck converter can be operated with a fixed duty cy-
cle and the forward converter duty cycle modified for regulation). In either case, the topology 8.7 Two-Transistor topologies
is insensitive to the rise and fall times so high frequency PWM frequencies can be used to
reduce the inductor and transformer sizes.
8.7.1 Two-Transistor Forward converter
Current-fed forward converters typically use two-transistor, push-pull or full-bridge topologies
(see following sections). This is because the two switches must overlap, so that the current Lout
flow through the transformer is continuous and uninterrupted (any break in the current flow
would cause destructively high voltages to develop). The primary side inductor limits the cur- Q2 D3
rent when both switches are on, which also gives the advantage that the topology is inherent- D2 T1 D4 C out RL
ly short-circuit protected. This is very important for high power applications, as designing a
Cin
reliable over-current trip with high dynamic current loads is tricky; as the current fed forward
AC D1 N:1
topology can tolerate brief short circuit conditions without damage, the over-current trip time
can be extended to avoid nuisance tripping in noisy electrical environments. Q1
As an active PFC boost stage is impractical (boost followed by a buck followed by a forward
converter), current-fed forward converters are typically used where power factor correction is Fig. 8.31: Two-transistor forward topology
not an issue, such as in three-phase supplies or where the power is higher than 3kW and the
regulations do not apply. Two-transistor (TT) converters are considered one of the most reliable topologies for higher
power AC/DC converters. There are several reasons for this:
D5
L2 L1 1. The switching transistors have to handle only the maximum input voltage (which is a
QE
QA QC fixed voltage if a PFC front end is used). Any turn-off switching transients caused by
D1 D3
T1 parasitic elements are gated by the fast recovery diodes. This means that the tran-
Cin D7 D8
Cout1
RLoad1 sistors need only be rated for the input voltage plus some headroom, rather than for
D6
AC double the input voltage as in a single-ended switched topology.
D9 C
QB QD D10 out2 RLoad2
D2 D4
2. Timing is not critical – as both transistors turn on and off together, there is no require-
D11 C
D12 out3 RLoad3 ment for any dead times to avoid shoot-through.
Fig. 8.30: Triple output current-fed full bridge forward converter 3. No snubber networks are needed. Both the residual magnetizing energy and any ener-
gy stored in the leakage inductance are transferred back into the PFC capacitor at the
end of each cycle by the two diodes. This enhances the efficiency and reduces EMI as
L2, Cin, QE and D6 form the current source. L1 is the forward primary side storage inductor excess energy is not dissipated but recycled.
replacing the inductors on each output. The full bridge configuration avoids the need for a
reset winding as long as the duty cycle is ≤50%. D5 clamps and recycles any excess energy 4. There is no need for a reset winding, simplifying the construction of the transformer and
back into the input capacitor. lowering the cost.
5. As the topology is hard switching, no reverse voltages appear across the MOSFETs
under any operating condition, so the transistor body diodes are not stressed.
The disadvantages are that ZVS-operation is not possible which limits the operating frequency
and that the duty cycle must be kept below 0.5 to allow the transformer time to reset on each
cycle. Also, the freewheeling diodes must be the more expensive high voltage fast-acting type.
106 107
freewheeling diodes then turn off. The time until the next cycle starts (blue section) is the
Although both transistors are driven by the same PWM signal, the high side FET will need a margin needed to ensure that the core is completely reset each cycle. During this time, the
floating gate driver which also adds cost. However, as the FETs need only be rated for Vin, primary winding current still continues to ramp down as current is still circulating through the
the additional costs are often balanced out by cheaper power-FET prices. output diode (CCM operation).
Lout
8.7.2 Push-Pull Forward converter
Q2 D3
The push-pull topology uses a centre-tapped primary and secondary transformer winding and
D2 T1 D4 C out RL alternately switching transistors. This adds to the complexity of the transformer construction
Cin and increases the switching voltage stress on the transistors to 2Vin, but allows four-quadrant
AC D1 N:1
use of the magnetic core. In other words, double the power for the same sized transformer
Q1 core compared to a single-ended forward design.This makes the push-pull topology suitable
Current Flow, Q1 + Q 2 on for AC/DC converters up to 1kW.
Current Flow, Q1 + Q 2 off
However, as the full input current flows through each primary half-winding, they each need to
cope with double the current compared to a single-ended design, so they need to be suitably
Fig. 8.32: TT-Forward topology CCM current paths with the transistors on (blue) and off dimensioned to cope.
(green). Excess energy is returned to the input capacitor at the end of each cycle, so no B
Lout
B2
ISW ∆B
D1
T1 D2 C out RL H
Cin
AC N:1
B1
t Q2 Q1
BSAT
IL
Fig. 8.34: Push-pull topology and the B-H curve operating area
t
To avoid core saturation, both transistors need to be switched on for the same time so that the
ILmag core magnetic flux density swings reliably from B1 to B2 with each cycle and does not “flux-
walk” into saturation. Any imbalance caused by timing errors, winding differences or unequal
t voltage drop across the output diodes can cause a gradual drift into core saturation as there
is no separate core reset mechanism. There are a number of techniques that can be used to
avoid or detect impending core saturation: the simplest is to use peak current mode feedback
Fig. 8.33: Current flowing in the switch (ISW), secondary winding (IL) and in the primary to adjust the Ton times to keep the peak current under control. If voltage mode regulation is
winding, IL, mag. As a rule-of-thumb, the peak IL,mag is chosen to be 1/10th of ISW,peak required for the application, then an alternative is to add a small air gap to the core so that the
core flux density is reduced to manageable levels.
During the first part of the cycle (red), both transistors are on and the freewheeling diodes are
biased off. The current through the transistors (ISW) and in the primary winding (IPRI) ramps up. The switching transistors need to cope with at least double Vin (add 20% margin for safety,
During the second half of the cycle, the transistors are turned off (ISW = 0) and the primary i.e. 900V rated transistors are needed for a 230VAC input) and be switched with a dead time
current and magnetizing current ramp down again through the freewheeling diodes back into to avoid shoot-through. This creates severe problems for the output diodes during the dead-
the input capacitor until the core has been completely demagnetized (green section). The times unless diode snubbers are added.
108 109
Making the push-pull current-fed changes the Vin/Vout relationship:
-2Vin
Eq. 8.28.
Vin
VDS,Q1 Vsat
0 time
Eq. 8.29.
VDS1
t D3
Q2 N:1
D2
T1 C out RL
C in
VDS2
t AC
D1
IL IL2 Q1
IL1
t
Fig. 8.36: Secondary-side switching waveforms showing the need to add output diode Fig. 8.38: Comparison of two-transistor forward (top) and two-transistor flyback (bot-
snubbers tom) topologies
8.7.3 Current-Fed Push-Pull Forward converter As with the TT- forward topology, both transistors in the TT-flyback topology are turned on and
off simultaneously. Note that the output winding is reversed with respect to the forward topol-
An alternative solution that avoids the need for output diode snubbers is to add an inductor on ogy. All of the advantages of the two-transistor forward converter also apply to the two-tran-
the primary side to make the push-pull current fed. Then the primary side switching wave- sistor flyback converter:
forms must overlap to keep the current flow continuous:
Lin 1. The switching transistors have to handle the only the maximum input voltage (which is a
fixed voltage if a PFC front end is used) as the overall voltage stress is divided equally
D1
over the two transistors and the diodes clamp overshoots to the input voltage.
T1 D2 C out RL
Cin
AC 2. Timing is not critical – as both transistors turn on and off together, there is no require-
N:1
Q2 Q1 ment for any dead times to avoid shoot-through.
Q1 and Q2 must not be off at 3. No snubber networks are needed. The leakage inductance energy is gated by the fast
the same �me
recovery diodes and recycled into the input capacitor.
Fig. 8.37: Current-fed push pull
110 111
4. As the topology is hard switching, no reverse voltages appear across the MOSFETs un-
der any operating condition, so the transistor body diodes are not stressed. 8.8 Using paralleled transformers to increase the power
As flyback converters are typically very low-cost applications, the two-transistor flyback is An often-used technique to increase the power of an AC/DC converter is to operate multiple
seldom seen despite its inherent advantages, mainly due to the added cost of the additional transformers in parallel. This can be done with the forward topology very simply by directly
high-side transistor with its floating gate drive and the need for two expensive fast-acting connecting the two transformers to the same power stage and output rectifiers. Note: the
freewheeling diodes. switching is not interleaved but simply paralleled.
The two-transistor flyback can be used in CCM, DCM or CrCM modes, just like the single-end- The transformers need to be fairly well matched to ensure good power sharing:
ed topology.
Lout
In continuous conduction mode, the voltage across each transistor will show a clamped ring-
D3
ing caused by the resonance of the switching transistor’s Coss capacitance and the primary Q2 N:1
D2
T1 D4 C out RL
inductance before stabilizing at half of the combined input and output voltage (figure 8.39). As
C in
this ringing is clamped by the recovery diode and quickly damped by the primary winding re-
sistance, there is no need for a snubber. AC
D1 T2
Vds Q1
Vin+Vf
(Vin+Vtrf)/2
Fig. 8.41: Directly paralleled forward transformers
To allow for production tolerances, it is often better to use separate forward diodes. The cur-
rent sharing ratio then becomes simply the ratio of the diode forward resistances which are
t
Vg more tightly controlled than the transformer parasitics:
Fig. 8.39: Two-transistor flyback in CCM. Vf is the forward voltage drop of the recov-
ery diode, so the maximum voltage stress on each transistor is Vin + Vf. Vref is the
reflected output voltage. Eq. 8.30:
t
In discontinuous conduction mode, there will be an additional ringing seen on the waveform
as the output current falls to zero, again caused by the interaction of the transistor’s output Practical Tip: As the diode on-resistance is temperature dependent, mount both D1 and D2
capacitance and the primary winding inductance (figure 8.40). Again, the recovery diodes close together or on the same heatsink so that they remain thermally matched or, better still,
clamp the oscillation to limit the voltage stress on the switching transistors. use a double diode with a common cathode:
Vds D3 Lout
Vin+Vf
Q2 N:1
(Vin+Vtrf)/2 D2
T1 D4 C out RL
C in
Vin/2
AC
D1 T2
t Q1
Vg
Fig. 8.40: Two-transistor flyback in DCM
t
112 113
It is also possible to operate transformers in series to share the dissipated power and reduce Q1 and Q2 are operated alternately with a suitable dead time between them. During the dead
the core temperatures. This is more commonly called a stacked topology. An elegant solution time, Q3 is operated to actively clamp the combined transformer voltage by circulating the
is to use a capacitive divider to set the centre voltage at half the rectified DC bus voltage. The current back into clamp capacitor Cclamp. As the clamp current flows in both directions,
voltage stress on the switching transistors is then halved. The stacking can be repeated if Cclamp must be non-polarized and Q3 switched with a floating driver supply:
higher voltages need to be accommodated:
Lout1
Q1
Q2 D5
D2 T1 D6
Cin1
D1 N:1
Q2
Q1
Lout2
AC
D7
Q3
Q4
D4 T2 D8 Cout RL
Cin2
D3 N:1
Q3 ILin
Fig. 8.43: Stacked two-transistors forward converters. Each switching transistor has
Io
half the voltage stress of a single stage. If three transformers and capacitors were to
be used, then each transistor has a third of the voltage stress
N:1
Cclamp Published in: 2018 IEEE Applied Power Electronics Conference and Exposition (APEC)
DOI: 10.1109/APEC.2018.8341297
AC
Q3 D4 Stacking or paralleling transformers can increase the power handling if space (especially
T2 C out RL height) is limited and offers many opportunities for innovative switching topologies, such as
Cin2 the examples given above. The main disadvantages are increased costs and the difficulty
N:1 of matching the transformers precisely enough so that parasitic effects (especially leakage
Q1 inductance differences) do not affect the performance. Nevertheless, it is a useful technique
in certain situations.
114 115
The common point of the three-phase supply can be tied to neutral or to ground, but in many
8.9 Poly-phase supplies industrial installations earth is preferred. This means that standard single-phase input AC/
DC converters cannot be used with phase-to-phase AC power supplies because without a
For higher power AC/DC converters, two or more phases can be used. To full-wave rectify a neutral reference point, the voltage between and two phases is much higher (√3 of the phase-
three-phase input, six diodes are needed: to-neutral voltage), for example, a three-phase supply with 230VRMS on each phase has a
phase-to-phase voltage of nearly 400VAC.
Full-wave rectification
-√3Vpeak
Fuse
-Vpeak Even if the standard single-phase input AC/DC converter had an input voltage range that was
RMS wide enough to handle the higher input voltage of phase-to-phase operation, there is a sepa-
Voltage (V)
0
rate issue with surge handling capability. A standard single-phase converter needs to with-
-Vpeak
stand at least 1kV peak voltage surges (IEC 61000-4-5, Class 2) in order to meet typical in-
-√3Vpeak
door industrial and commercial performance requirements, but three-phase supplies are more
0.00T 0.25T 0.50T 0.75T 1.00T 1.25T 1.50T
Time often classed as Over Voltage Category III installations with a minimum of 4kV surge with-
stand capability (IEC 61000-4-5, Class 4). These are minimum levels. More typically, 2kV
surge capability for single-phase and 6kV surge capability for poly-phase installations are
Fig. 8.46: 3-phase input rectifier specified, meaning multiple filter stages are required for compliance.
Fuse
A full-wave three-phase rectifier will generate a peak DC rectified output voltage of: Ferrite
Beads MOV
C6
+VDC
D1 D3 D5
NTC Y2
L1 C9
420VDC Elect.
MOV C5
C4
Rectifier
The forward voltage drop across the diode bridge can be assumed to be around 1.2V and Y2
Diodes
415VAC/50Hz 970VDC 926VDC Only if individual inductors on each input are used with CCM control can a three-phase PFC
controller with a single switch be implemented:
480VAC/60Hz 1123VDC 1072VDC
116 117
Fuse
+VDC
+VDC
Lin1 DPFC
D1 D3 D5 PFC D1 D3 D5
PFC D1 D3 D5
D2 D4 D5 Q1a Q3a
Q2a
-VDC
400 20
Fuse
+VDC
200 ia 10 Q1a Q5a
Q3a
T PFC D1 D3 D5
PFC
ia D1 D3 D5
Voltage (V)
Choke Choke
Current (A)
0 0
L1 Q1 Q2
L1
-200 L2 -10 Q3 Q4 L2
L3 L3
Q5 Q6
-400 -20
0 5 10 15 20
D2 D4 D5 Q1a Q3a
Q2a Q2a Q4 a Q6b
t (ms)
-VDC
Fig. 8.48: Three-phase input PFC with CCM control (only one of the phases shown)
Fig. 8.49: Three-phase Vienna Rectifier topology PFC with alternative half or full
The circuit shown above has the advantage of simplicity, but the disadvantage is that the active input switching
voltage stress on the switching transistor is now very high (realistically, at least a 900V FET
would be required). Despite the reduced input current ripple, a multiple-stage EMC filter is typically still required:
Fuse +VDC
One solution to the problem of high switching voltage stress is to use an active, three-level rec-
tifier such as the “Vienna” rectifier shown below (there are many variants of this basic topology, Ferrite MOV MOV
PFC
Choke
D1 D3 D5
Beads
but essentially the goal of all of them is to reduce the switching stress on the transistors by using L1 Q1 Q2
C10
a capacitive divider to halve the supply voltage). The input diodes can be either partly or fully
Elect.
L2 Q3 Q4
C12
C11
C4 C4 C4
Y2 Y2 Y2
Rectifier
Diodes
Fig. 8.50: Example of an EMC filtered Vienna topology PFC input stage
118 119
Chapter 9 The above circuit will have a maximum output current of 47mA for 230VAC supply or 27mA for
a 115VAC supply, so the Zener diode needs to have a 1W rating to survive a no-load condition
(12V x 0.047A = 564mW)
Transformerless AC power supplies
The metal oxide varistor (MOV) is required to avoid AC surge voltages exceeding the rating
If isolation is not required, then a very low-cost AC/DC power supply can be made without of the dropper capacitor. The fusible resistor has two functions: to act as a fuse if the circuit
using a safety isolation transformer. There are several techniques available to handle the malfunctions or the output is short-circuited and to act as a resistor to limit both the inrush
large voltage difference between the AC supply and the DC output. current and MOV current.
Practical Tip: The output voltage rise is not instantaneous. With each peak half-cycle of the mains
9.1 Capacitively-coupled AC/DC input, current flows into the output capacitor, but during the cross-over period, very little charging
current flows. Thus, the output rises in small steps until the Zener diode voltage limit is reached.
This is one of the simplest AC power supply designs. A dropper resistor would dissipate too Increasing the load slows down the rise time so any rise-time sensitive circuitry operated from
much power and get very hot, but the AC reactance of a series capacitor can be used to drop such power supplies should have either an under-voltage lockout or a long start-up time delay.
the input voltage without dissipating too much energy.
0% Load 50% Load
680nF,
400V, X 1
Vout
Fusible Resistor
100R
+12V, 30mA Non- Vout
470k
330µF,
Isolated!
MOV 12V 25V
AC 275VAC
t t
0V
15 cycles (300ms) are required for the 30 cycles (600ms) are required for the
Fig. 9.1: Capacitively coupled AC/DC converter output voltage to stabilize when there is output voltage to stabilize when there is
no output load. 50% resistive output load.
The reactance of the dropper capacitor is:
Fig. 9.2: DC output voltage rise with and without an output load
Eq. 9.1:
Typical transformerless applications include passive IR movement detectors or relay time
delay circuits (the relay output contacts provide the necessary output isolation to the mains
So, for a 115VAC input and the 680nF capacitor shown above, Xc works out to be about 3.9 supply and a 555 timer is not too fussy about the input voltage regulation).
kohms for 60Hz mains and 4.6 kohms for 50Hz mains. This is much less than 470k so the 680nF,
400V, X 1
parallel resistor can be ignored for the remaining calculations (it is required to discharge the
capacitor when the power is switched off and to act as a primitive EMI filter to reduce the Fusible Resistor
100R
NC
conducted harmonics). 470k C
4 8 NO Isolated
MOV 12V
AC 275VAC 330µF, 2 555 Contacts
The dropper capacitor current can be derived from: 25V 6 3
1 5 Com
910k
100n
Eq. 9.2:
Time delay ≈ C (in µF) seconds
So, for an 115VAC/60Hz input, Irms = 43354 C ≈ 40mA/µF and for a 230V/50Hz input,
Irms = 72257 C ≈ 70mA/µF. Fig. 9.3: Example of a turn-on-delay circuit
120 121
short when regulating, so this relatively high current will only flow for 1.5% of the time and a
9.2 Non-Isolated Buck regulator ¼ W resistor will suffice.
The disadvantages of a limited output current and the slow stabilization time for the capaci- The push-pull transistor pair Q2 and Q3 level-shift the controller’s PWM control signal to a
tively coupled transformerless power supply can be overcome using a high voltage non-iso- high-side gate drive for the P-channel FET, Q4, which switches between the high voltage DC
lated buck converter. The AC input is rectified and smoothed to provide a high voltage DC bus supply and a voltage that is 12V lower than that, as set by the 12V Zener diode in series with
which can then be efficiently down-converted to a low voltage output. the 100k resistor to ground. The output is then smoothed by the output inductor and capacitor
to provide a regulated 5VDC supply.
The output current restriction is lifted so that higher power designs can be achieved and the
very wide input voltage range of the buck converter means that a much smaller bulk capacitor Q2 and Q3 are general-purpose bipolar transistors, only Q1 and Q4 have to withstand the full
can be used compared with equivalent isolated designs (see input stage below, where a DC bus voltage. A Spice simulation (simulated without any feedback) shows that the output
2.2µF bulk capacitor is all that is needed for a 2.5W design) soon settles to 5.0VDC. In figure 9.5 below, the blue trace is the output voltage referenced to
ground, the red trace is the gate drive signal and the green trace is the 12V Zener diode volt-
470µH Non-
Fuse HV DC Bus
Isolated! age (both referenced to the HV bus supply).
12V
300k 200R 100 n
Zener
AC 10nF 2.2µF Q2
DB1
400V 400V NPN Q4
P-Channel 7.0V
V[vout]
R gate
FET 5V @ 6.3V
Q3
1 mH 500mA 5.6V
PNP 4.9V
470k 220µF 4.2V
Q1 10 V 3.5V
NPN 100 k D1 2.8V
2.1V
50R 1.4V
0.7V
0.0V
1V
V[V_G,VIN] V[V_ZENER,VIN]
Vcc SW
5V1 Controller -1V
100n Zener GND FB -3V
R1
R2 -5V
D2 -7V
Schottky -9V
-11V
-13V
0ms 1ms 2ms 3ms 4ms 5ms 6ms 7ms 8ms 9ms 10ms
Fig. 9.4: Example of a non-isolated high input voltage buck converter
Fig. 9.5: SPICE simulation of the circuit shown above without feedback. With feed-
The controller IC is a standard buck converter controller that operates from a 5V supply (it is back, the initial over-voltage peak would be regulated out
not necessary to have a high voltage part, even though this design is non-isolated).
There are a number of design limitations to this high voltage buck converter design due
The rectified 115V or 230VAC mains input (160VDC or 325VDC) is used to supply the start- to the extremely short on-time. The operating frequency is limited to around 30kHz by the
up supply voltage via the 300k dropper resistor and the 5.1V Zener. Once the power supply slow response time of the power transistors. This means that a controller IC has to be
is operational, the 5V output is fed back via the Schottky diode (D2) to bootstrap the supply selected with an adjustable frequency setting as most standard buck converter ICs oper-
voltage from the output. ate at much higher frequencies. Secondly, the output has a strong saw-tooth ripple even
with heavy filtering. The biggest advantage is that the output current is restricted only
Transistor Q1 acts as a constant current sink. The base is tied to 5V, forcing the emitter to be by the P-channel FET’s power rating and the output inductor power dissipation limits.
one junction drop lower at 5V - 0.7V = 4.3V. When the controller output, SW, is high, then no
current flows through Q1 as it is reverse biased. When the controller output is low, then the
current flowing out of the emitter is 4.3V/50R = 86mA. The current flowing in to the collector 9.3 High voltage linear regulators
must be the same as the current flowing out of the emitter, so the current through the 200R
resistor is also 86mA, irrespective of the voltage of the DC bus. The volt drop across the 200R An alternative to the capacitive dropper or discrete buck converter AC/DC is to use high input
resistor will be equal to 200R x 0.086A = 17.2V. The duty cycle of the controller will be very voltage linear or switching regulators. With a linear regulator, the output current is limited to
122 123
10mA or less, but this is sufficient for many microcontrollers and Internet-of-Things (IoT) ap- The input is half-wave rectified by diodes D1 and D2 and followed by a simple EMC filter
plications. One of the characteristics of IoT is that the data links are wireless, so the individual formed by C1, L1, C2 and the ferrite bead (D2 ist optional, but it improves the surge with stand
nodes need only have a power supply input without any output connectors3 and can be per- voltage). The fusible resistor limits the inrush and input ripple currents and acts as a fuse in
manently sealed. An isolated internal power supply is therefore not necessary. the event of a failure. As the controller IC is floating with a direct
connection to the high voltage input only, a “trick” is needed to make the circuit work.
Although very inefficient (<3%!), high voltage linear regulators offer tight regulation, low quies-
cent current and wide AC input range supply from 85VAC to 250VAC or DC supply voltage The trick is the combination of D3, D4 and C4. If the D3 and D4 are the same part with the
from around 60V to up to 450V. The output voltage can also be adjusted over a wider range same characteristics, then the resulting voltage across C4 is the same as that across C5. In
than most other solutions. High voltage linear regulators are also available as SMD compo- other words, the output voltage is reflected onto C4. The output voltage can thus be regulated
nents making very compact, low-cost solutions possible. and set by the ratio of R1 and R2 connected across C4, even though the common of C4 is not
connected to the output. The source-pin referenced voltage across C4 also allows the internal
AC or DC DC Out
Pass high input voltage shunt regulator to be bypassed and the IC to be powered via R3 once it
Input Element 3.3V – 238VDC
has started up.
24-250V +
10µA
10mA max.
- R1
DC
Reference Non- For many IoT applications, it is useful to have a main 5V supply for the 2.4GHz radio or a 12V
Isolated!
10µF 1µF supply for a relay coil plus a 3.3V supply for the microcontroller and sensors. Adding a low
450V
cost LDO regulator to the 5V or 12V main output adds an additional 3.3V output with very little
increase in the BoM cost or overall size of the solution.
R2
The overall efficiencies are high because there are no transformer losses:
80.00% 80.00%
Fig. 9.6: Functional block diagram of a high voltage linear regulator 75.00% 75.00%
70.00% 70.00%
Efficiency
Efficiency
60.00% 60.00%
5V & 3.3V
For slightly higher output currents (up to 175mA), a very compact and cost-efficient, non-isolated 55.00%
12V only
55.00%
off-line AC/DC converter can be constructed using an integrated switcher IC that contains a built-in 50.00%
12V & 3.3V
50.00%
45.00% 115VAC 45.00%
high voltage switching transistor, a high voltage current source for the internal power supply and a
40.00% 40.00%
minimum off-time PWM controller with over-current, short-circuit and over-temperature protection,
35.00% 35.00%
all in one integrated monolithic package. More advanced ICs also include frequency jittering to 50,00 100,00 150,00 20,00 4
reduce the EMC signature and cycle skipping to reduce the no-load consumption. Iout(mA)
Non-
R3 Isolated!
80.00% 80.00%
75.00% 75.00%
R1
BP
70.00% 70.00%
FB C4 D4
FR1 Ferrite Off-Line C3 65.00%
5V @ 120mA 65.00%
Fusible Resistor R2 5V only 5V only
L1 Bead Controller L2
Efficiency
Efficiency
D1
Drain Source 3.3V @ 60.00%
100mA 5V & 3.3V
60.00%
5V & 3.3V
3 .3V LDO
55.00% 55.00%
AC C1
400V
C2
400V
D3 C5 C6 C7
50.00%
12V only
50.00%
12V only
Fig. 9.7: Off-line AC/DC converter with dual outputs 35.00% 35.00%
20,00 40,00 60,00 80,00 100,00 120,00 140,00
50,00 100,00 150,00
Iout(mA) Iout(mA)
3
The only problem is the antenna connection. If an external stick antenna is used, then the Fig. 9.8: Efficiency/load graphs for 115VAC input and 230VAC input for an off-line converter
metal SMA connector represents a touchable live conductor. The stick antenna must be For controller ICs with pulse-skipping mode, the no-load power consumption is also very low
either fully enclosure within the plastic enclosure or, more often, an on-board ceramic or PCB
trace antenna is used instead.
124 125
over the entire input voltage range.
V rms [V] 5V ONLY 5V & 3.3V 12V ONLY 12V & 3.3V
85 19 23 25 47
115 21 24 24 48
230 26 29 31 54
265 29 32 34 57
Table 9.1: Measured no-load power consumption (mW). Dark green fields show com-
pliance with 5I no load power consumption limits (≤0.03W). Light green fields show
4 compliance (≤0.15W)
Finally, the PCB can be made very small, making it ideal for building in to IoT applications:
Despite its small size (33 x17 mm) this off-line switcher demonstrator has a universal input
voltage range, dual regulated outputs which are short-circuit protected and meets EMC regu-
lations without any external components.
126
Chapter 10
Wireless power
Most of us are familiar with an electric toothbrush charger. The toothbrush simply slots on to
a spigot and the battery charging indicator starts to blink without there being any electrical
connection. At its most basic, the charging circuit consists of a relaxation oscillator that gen-
erates a varying magnetic field which is intercepted by a matched coil in the toothbrush to
transfer power wirelessly to the rechargeable battery.
Rectified
AC
C1 L1
C3
Rb1
LED
Q1 C2 D1 R charge
Batt 1
L2 M CM
C4 Batt 2
Rb2 Re
Fig. 10.1: Simplified electric toothbrush charging circuit using a Colpitts oscillator
This self-oscillating design uses a Colpitts oscillator to generate an AC sine wave output from
the rectified and stabilized DC input. On switch-on, the transistor Q1 is turned on by the bias
resistors on its base connection and the capacitor C1 starts to charge up. The increasing volt-
age across C1 generates an increasing magnetic field in the inductor L. Once the capacitor
C1 is fully charged, the voltage across the inductor L is constant and the magnetic field starts
to collapse. This induces a voltage across it that is higher than the supply voltage, turning off
Q1 via C2 and holding it off until the magnetic field in the inductor has dissipated. The cycle
then begins again. The resulting voltage waveform across the inductor is approximately a sine
wave. The resonant frequency of a Colpitts oscillator is given by:
Eq. 10.1:
The matching receiver coil must be accurately positioned to intercept the resulting magnetic
field generated by the transmitter coil. The induced AC voltage is rectified and used to trick-
le-charge the rechargeable batteries. As the battery voltage rises, the voltage drop across the
resistor Rcharge reduces and the charging LED extinguishes.
The maximum power transmission (minimum losses) can be calculated from:
Eq. 10.2:
127
Where Q is the system quality factor:
10.1. Resonant wireless power transfer
Eq. 10.3:
Resonant inductive coupling uses three or more often four coils. The intermediary coils are
k the coupling coefficient between the transmitting inductance LT and the receiving induct- resonant tank circuits with a capacitor in series with the winding. The resonance windings act
ance LR, which is derived from: as “magnetic lenses”, boosting the magnetic field from the transmitting coil and concentrating
the received field for the receiving coil. If even only a small part of the transmitted alternating
Eq. 10.4: magnetic field is intercepted by the receiver resonator, it will pick up some of the energy, so
separation distance and alignment is not so critical. Resonant power transmission applica-
Where nT and nR are the number of turns of each coil respectively and PRT is the permeance tions include battery-less smartcards, RFID tags and near-field communication systems. Data
between them (equivalent to the magnetic conductivity), which in turn is derived from: communication and adaptive feedback is typically via BluetoothTM:
Eq. 10.5:
Where μ0 is the permeability of air, A is the cross-sectional area and l is the magnetic path
length.
The oscillator frequency, ƒ, can be chosen to be high (100s of kHz) to keep Q high and there-
fore the efficiency high, but it should not be too high to avoid EMC issues, relaxation losses
and other ohmic losses due to the skin effect.
It follows that if the two coils are placed in close proximity then the magnetic path length will Fig.10.3: Resonant wireless power transfer schematic
be small and the permeance high, giving a higher mutual inductance and a higher coupling
coefficient, k. In the case of the rechargeable toothbrush, the spigot design accurately posi- 10.2. Inductive wireless power transfer
tions the transmitting coil around the ferrite core of the receiving coil to maximise the power
transmission, as can be seen from the original patent application drawing from 1964 below: Rectifier and Filter
Receiver
H Battery
Charger
16
5
Rx Control Battery
22
36a
24 42
26
38
36b VIN
30 Wireless Energy Transfer
32
Fig. 10.2: Original patent drawing for an inductive charger for an electric toothbrush DC
Tx Control
The electric toothbrush charger is a special case of near-field wireless power transfer system. Transmitter Coil (multiple coils optional)
Half-Bridge
The mechanical design means that coil alignment is not an issue, safety is not critical as the Transmitter
power transferred is very low and the simple oscillator circuit keeps the cost down, which is
essential for a mass-produced consumer product. Fig. 10.4: Wireless power transfer schematic
Inductive chargers for mobile phones or other rechargeable devices are much more com- Inductive charging is more efficient than resonant charging but more sensitive to coil alignment,
plex. Some of the most commonly used wireless power transfer open standards are Qi (pro- so the choice between them is mostly application-specific. The transmission range is limited to
nounced “chee”) and the Power Matters Alliance (PMA) standards for inductive charging or around 50mm, reducing to 5-10mm if the transmitter or receiver coils are not perfectly aligned,
the Airfuel Alliance for magnetic resonance power transfer. although multiple coils and/or adaptive controllers can be used to make the alignment less critical.
128 129
Communication is achieved by the receiver generating coded load pulses which the transmit-
Z ter can detect and decode (figure 10.6).
Transmi�er Receiver
Y
∆Z Power Rec�fica�on
Eff (%) Control Communica�on
X Control
COMM
∆Y Y
∆X Eff (%)
X
2 KHz Load Pulses on RX Side
X or Y-axis misalignment (lateral)
Y (mm)
Z Fig. 10.6: Bi-directional data communication via pulse modulation (used, for example,
Z‘
in the Qi system)
Y A further advantage of data communication is that the receiver can send a received signal
strength value back to the transmitter to form a closed loop control system to handle load tran-
Eff (%)
X sients, misalignments and fault conditions. Other systems use a separate radio link to transmit
data back to the transmitter.
ϴ misalignment (angular)
Angle (degrees) Wireless charging is nowadays most commonly used to recharge mobile phones, but it also has
a place in industry for IoT applications. For example, consider a remote sensor module that is
Fig. 10.5: Effect of various misalignments on transfer efficiency (typical transfer curves) hermetically sealed against liquids, contaminants and vapours with no external connectors. It
could be placed next to a piece of heavy industrial equipment and transmit local environment
The energy transfer follows a square law in the Z direction (coil separation), a roughly linear sensor readings such as ambient temperature, magnetic field strength, acoustic noise levels
relationship for lateral misalignment (coils not perfectly overlapping) and a non-linear relation- or shock/vibration via a data link that uses an on-board chip antenna. The system could be
ship for angular misalignment (receiver tilted with respect to the transmitter coil). powered from an internal supercapacitor or rechargeable battery whose voltage is monitored
and transmitted along with the other data. Once the internal power source becomes drained,
Unlike the simple electric toothbrush charger, inductive charging systems such as Qi use flat coils the whole sensor module is removed to a safe environment and placed on a recharging pad to
with no magnetic cores and run at higher frequencies (typically between 0.1MHz and 1MHz). This recharge the internal energy store. Thus, wireless charging is not just a “gimmick” for industrial
allows higher power transfer rates from 3W up to 70W or more, but then creates the problem of applications; it could become an accepted element in many harsh environment applications.
unwanted or hazardous induced voltages in any conductive metallic objects placed into the mag-
netic field. This hazard is eliminated by bidirectional data communication between the transmitter 10.3 PCB inductive power transfer
and receiver so that the full output power is only activated after the receiver has been properly
identified as a Qi-compatible device and that there are no metallic obstacles in the way. A small amount of power (1-2W) can be transferred across an isolation barrier using a core-
less transformer formed from adjacent PCB spiral tracks. The dielectric strength of FR4 PCB
material is 800V-1500V/mil, so a standard 4-layer PCB with 40 mils between layer 2 and layer
130 131
The implementation is relatively straightforward using a four-layer PCB: two opposing loops
3 will have an isolation voltage of at least 30kVDC (care must be taken with vias to maintain a are formed from the PCB tracks on the top and bottom layers to create the transmitting and
minimum separation). receiving coils and the data is transmitted by modulating the high frequency drive signal.
GND Cross
The inductance of two overlying PCB spirals was worked out by Wheeler in 1928: Rx/Tx section
through
Rx/Tx
D PCB
GND
Where μ0 is the permeability of FR4 which is typically around 1, d is the inner diameter of the
spiral, D is the outer diameter and n the number of turns.
Eq. 10.7:
Circuit
Where the coupling coefficient, K, is typically 0.5 to 0.6 for two layers separated by 40 mils
of FR4. Rx
Tx
The efficiency is not high (around 25%), but the advantage of fully automated production and
high isolation makes PCB coreless transformers a useful technique.
Practical Tip: Inductive coupling for wireless data rather than power transfer can also be Fig. 10.9: PCB inductive communication arrangement
useful to replace the optocoupler in the feedback circuit in a conventional AC/DC converter or
to communicate fault conditions from the secondary to the primary across the isolation barrier. The PCB track connections are transmission lines that have to be impedance-matched with
the transmitter and receiver amplifiers to avoid unwanted reflections. The PCB material (FR4)
With the rise of digital power supplies, the output regulation, as well as the synchronous recti- acts as a dielectric between the trace carrying the RF signal and the ground plane with char-
fication timing can be digitally controlled from the primary-side microcontroller using such sim- acteristic impedance (in ohms)
ple inductive coupling across the isolation barrier. As the system is symmetrical, bi-directional
data can be sent by duplicating the transmitter and receiver circuitry on both sides. Eq. 10.8:
132 133
Multilayer PCB characteristic capacitance [pF/in]:
W Eq. 10.12:
PCB Track T
H Multilayer PCB propagation delay [ps/in]:
Eq. 10.13:
Fig. 10.10: PCB stripline geometry and characteristic impedance (Z0) relationship
NOTE: PCB dimensions are still commonly defined in imperial measurements (inch, mils), so
For a standard PCB, the dielectric constant, ℇ, is equal to 4, so if the 1-ounce copper track is these have been used here instead of the metric system.
20 mil wide and the PCB thickness is 10 mil, the resulting impedance will be 50 ohms. For a
75 ohm impedance, reduce the track thickness to 8.3 mils.
The PCB transmission lines will also have a characteristic capacitance [pF/in] of:
Eq. 10.9:
Eq. 10.10:
For multilayer PCBs where the tracks are embedded between two ground or power planes,
the above relationships need to be modified slightly:
Ground Plane
H W
Embedded FR4 Dielectric
PCB Track T
H
Ground Plane
Eq. 10.11:
134 135
Chapter 11 The simplest implementation of such a closed loop power supply system is a type 1 feed-
back network using operational amplifiers (op-amps).
Feedback
11.1 Measuring loop stability
The general arrangement for any closed loop system is shown below:
The degree of immunity to instability can be found by carrying out a bode plot test where small
Input
perturbations are injected into the feedback system and the response measured. This can be
done using specialist equipment or tested by using standard laboratory equipment and an
audio transformer:
Ref Ʃ G(s) Output
H(s)
Fig. 11.1: Generalized block diagram of a feedback system
There are two gain blocks: G which represents the power gain and H which represents the
feedback gain. The summing point has a non-inverting reference voltage input and an invert-
ing input for the feedback signal (negative feedback). The (S) suffix indicates that these two
gain blocks are in the S-domain, i.e., they have both DC and AC components. The AC com-
ponent means that both the gains will change with frequency and that the differences in the
frequency dependency will cause a phase shift in the feedback.
In the case of a power supply, the system input is the supply voltage and the system output is Fig. 11.3: Set up for deriving loop stability experimentally (reproduced from DC/DC BoK)
the output voltage, but the feedback can be either current- or voltage-based.
Practical Tip: In practice, the choice of audio transformer, shunt resistor and the way the test
Input leads are connected influences the measurements considerably. You will get more accurate
results using a commercially available frequency analyser with matched injection isolation
transformers than if you attempt to make your own.
KFB The compensation is sufficient if the phase margin is 45° or higher and the gain margin is at
least -6dB (preferably closer to -10dB). The margins need to be checked under all operating
Fig. 11.2: Generalized feedback block diagram for a power supply condition extremes (max Vin, min Vin, min load*, max load, min temperature, max tempera-
ture) to guarantee stable operation.
Where the open loop gain, GOL(S) is:
*NOTE: loop stability measurements can only be done on a constantly running system. If the
Eq. 11.1: AC/DC controller goes into pulse-skipping mode at low loads, then no proper measurements
can be made.
136 137
The injection point in the loop is optimum if the impedance on one side of the injection point is If the injected perturbation signal is too weak, then the measurements will become increasing-
much higher than on the other, for example between the low impedance output stage and the ly inaccurate at low frequencies because the signal-to-noise ratio will be too low. If the injected
high impedance resistor divider to the feedback comparator (as shown below in figure 11.4) It signal is too strong, then the measurements will become erratic at higher frequencies as the
would also be possible in theory to inject the signal between the comparator output and PWM perturbations will over-ride the internal feedback voltage levels.
controller input, but in many controller ICs, this point is internal to the IC and not accessible.
60 180
40 120
Vout = Low Voltage
PWM
20
Generator Low 60
Impedance
Injection
R inj
Transformer 0
Gain (dB)
Phase (°)
0
High
Impedance
R1 -20 -60
C1
-
Rin
R2 -40 Gain -120
+ Vref
Phase
-60 -180
1 10 100 1000
Fig. 11.4: Suitable injection point for low output voltages Frequency (kHz)
However, for high voltage outputs such as a PFC stage, the injection point shown in figure Fig. 11.6: Bode plot showing instability at low frequencies (blue circle) caused by poor
11.4 is not ideal. This is because the perturbation signal is so attenuated by the high resist- signal-to-noise margin - the plot becomes noisy
ance voltage divider that the measurements become unreliable. In this situation, an additional
60 180
buffer op-amp can be used to allow the signal to be successfully injected. The op-amp is
unity gain, so will not affect the readings as long as it has a high enough bandwidth.
40
120
20
60
PWM Vout = High Voltage
0
Gain (dB)
Phase (°)
Generator
R1 0
R1 -20
Injection
Frequency (kHz)
Transformer
Fig. 11.7: Bode plot showing erratic readings at higher frequencies (blue circle)
Fig. 11.5: Alternative injection point using a unity gain op-amp for high output voltages caused by excessive perturbation signal strength- the plot is no longer smooth
138 139
60 180 11.2 Type 1 feedback loop compensation calculation
50
40
120 It is also possible to determine stability by calculation, depending on the type of compensation
30
circuit used in the feedback loop.
20 60 A Type 1 feedback circuit is shown below in both voltage (output voltage controlled by input
Gain (dB)
Phase (°)
10 voltage) and transconductance (output current controlled by input voltage) variants:
0 0
-10
Vout Vout
-20 Gain -60
-30 Phase
C1 R1 R1
-40 -120
1 10 100 1000 - Ig gm -
Frequency (kHz) R2 R2
+ Vref + V ref
C1
Fig. 11.8: Bode plot with optimal signal injection
Another way of visualizing the same gain and phase information is to use a Nyquist diagram. Voltage Transconductance
Most professional-grade frequency analysers can output the measurements as either a Bode
plot or a Nyquist diagram. The advantage of a Nyquist diagram is that not only the gain and
phase margins can be determined, but also the stability margin, which occurs at the frequency
where the curve is closest to the (-1,0) point (refer to figure 11.9). Fig. 11.10: Type 1 feedback circuits (voltage and transconductance versions)
The factor -1 takes into account the -180° phase change implicit in negative feedback. The
Nyquist diagram can also be reflected along the imaginary axis to show the instability point at For example, if the desired output voltage is 5.0 volts and the reference voltage is 2.5 volts,
(1,0) for the entire feedback loop. R1, C1is divided by two.
then resistor R1 will be made equal to R2 so that the output voltage
Imaginary
fzero
1
These circuits are integrators: sudden changes in the input signal are turned into a more
Fig. 11.9: Nyquist diagrams for negative (-1,0)
slowly ramping output signal which gives the power supply some immunity from breaking into
ω=∞ ω=0
feedback loop stability. From the plotted ϴ Real oscillation by over-correcting for changes in load or 0input voltage. The output
Frequency ramp rate is
(Log Scale)
Phase Reserve
results, the angles and separations from the dependent on R1 and C1 only, R2 plays no role in the integration coefficient.
instability point (-1,0) can be measured to The gain/phase response for a type 1 feedback system is shown below:
derive the phase margin, gain margin and
Imaginary
stability margin
Amplitude R1, C1
Phase (°)
Reserve
fzero
The phase reserve is the angle between the plot (-1,0) 1
ω=∞ ω=0
and the real axis where it crosses the -1,0 circle. Real
The amplitude reserve is the separation between
the plot and the -1,0 point measured along the 0 Frequency (Log Scale) 0
Frequency (Log Scale)
real axis.
Imaginary
The stability reserve is the separation between Fig. 11.11: Type 1 feedback gain and phase relationship with frequency
the plot and the -1,0 point measured at its closest (-1,0)
ω=∞ ω=0
Phase (°)
approach. Stability Real The point at which the gain = 1 is the system zero.
Reserve
140 141
0
Frequency (Log Scale)
Gain (dB)
R1, C2 R3, C2
R3, C1
For voltage feedback: limited to 90°, meaning that the maximum overall phase
1 shift is 180°C. fThe peak of the phase
fpole
zero
boost response lies at the half way point between the zero and pole frequencies.
Eq. 11.2: Frequency (Log Scale)
For transconductance feedback, the transfer function is: (written in the s-format)
Gain (dB)
Phase
Phase (°)
R1, C2 R3, C2
Boost
Eq. 11.3: R3, C1 < 90°
1
fzero fpole
Practical Tip: The choice of the resistor values used in the divider network is unimportant
0
for the transconductance circuit as only the ratio affects the gain. The circuit would have the Frequency (Log Scale) Frequency (Log Scale)
same frequency response if either two 10k resistors or two 100k resistors were used for R1
and R2, for example. However, in the voltage feedback version, R1 appears in the frequency Fig. 11.13: Type 2 gain and phase relationship with frequency
equation but R2 does not. Changing R1 from 10k to 100k would alter the gain plot. There- Phase
Phase (°)
fore, if the output voltage needs to be trimmed when using voltage feedback, only R2 should Boostare (assuming that C2 is much larger than C1):
The new relationships
< 90°
be made variable and R1 kept fixed.
Type 2 voltage feedback:
0
The slope of the gain is -20dB per decade, defined by the classic integration function of R1 Frequency (Log Scale)
and C1. If the op-amp has an ideal linear response time to small signal changes, then both Eq. 11.4:
the gain slope and the phase shift are constant over frequency. This can become a problem
with repetitive or sudden step changes in the load or supply voltage. At higher frequencies
than the system zero, the power supply struggles to maintain regulation as the phase and gain
margins are too low. Type 2 transconductance feedback transfer function (written in s-format)
A solution to the problem of low gain and phase margins is to selectively boost them at higher
frequencies. The Type 2 feedback circuit and gain and phase frequency responses are shown
below: This equation combines the three main factors of the DC gain and the zero and the pole
terms, which individually can be derived from the following relationships:
C2 R3 Vout Vout
Eq. 11.6:
C1 R1 R1
- Ig gm -
R2 R2 Eq. 11.7:
+ V R3 + Vref
Vfb ref C1
C2
The gain at the crossover frequency is:
Voltage Transconductance
Eq. 11.8:
Fig. 11.12: Type 2 feedback circuits (voltage and transconductance versions)
As is evident from the frequency graphs in figure 11.13, the additional C2 and R3 components
have added both a gain boost and a phase boost at higher frequencies. The phase boost is
142 143
As is evident from the frequency graphs, the additional C4 and R4 components have added
11.4 Type 3 feedback loop compensation more gain and a phase boost at higher frequencies. The phase boost is now more than 90°,
meaning that the maximum overall phase shift is 225°C. The new relationships for Type 3 volt-
In some fast transient response power supply circuits, even the additional gain and phase age feedback are (assuming that C2 is much larger than C1 and R1 is much larger than R4):
boost created by the Type 2 compensation may not be sufficient. This is especially true for
CCM power stages that suffer from a large phase swing when the resonant frequency is ex- Eq. 11.9::
ceeded.
Type 3 compensators place an additional “speed up” circuit across the input voltage potential
divider: Type 3 transconductance feedback transfer function (written in s-format)
C2 R3 Vout V out
R4 R4 Eq. 11.10:
C1 R1 C3 R1 C3
- Ig gm -
+ Vref R2 R3 + Vref R2
C1 This equation combines the five main factors of the DC gain and the four zero and the pole
C2 terms, which individually can be derived from the following relationships:
Fig. 11.14: Type 3 feedback circuits (voltage and transconductance versions) Eq. 11.12:
R1,R4, C3
R1,C1 R4,C3
Gain (dB)
R3,C2
R3, C1
The gain at the crossover frequency is then:
1
fzero1 fzero2 fpole 1 fpole 2 Eq. 11.13:
Frequency (Log Scale)
Phase (°)
Phase
Boost 11.5 Optocoupler feedback loop compensation
>90°
In practice, most AC/DC power supplies require input/output isolation. The feedback path
0 is no longer direct but via an opto-isolator which also has a frequency dependent response.
Frequency (Log Scale)
The most common opto-coupler circuit uses the ‘431’ shunt regulator to control the optocou-
pler LED current. The 431 is a very versatile IC that acts like a tuneable Zener diode. A typical
Fig. 11.15: Type 3 gain and phase relationship with frequency circuit is shown below:
144 145
Adding these extra active components obviously affects the gain and phase frequency re-
sponse of the feedback loop. If we take the simplest Type 1 comparator, the opto-coupler
Vout
Vcc Ropto adds an additional pole and changes the flat phase response plot so that it behaves more like
a Type 2 feedback loop:
Copto
C1 R1 RLED Cout
R1, C1
- R1x Ropto ,
(dB) (dB)
Vfb R1, C1 R1x, Cx
+ Vref R2 IC1
Cx Copto ,
Ropto ,
GainGain
R2x R1x, Cx R1, C1
Copto ,
1
fzero fpole R1, C1
1 Frequency (Log
Fig. 11.16: Opto-coupler isolated feedback circuit (with a Type 1 comparator)
fzeroScale) fpole
Frequency (Log Scale)
In this circuit, R1x and R2x define the shunt regulator (IC1) threshold voltage (and therefore
the output voltage regulation point), RLED is the current limiting resistor for the optocoupler LED
and Cx is used to define the AC response of the 431 IC. On the primary side, the phototransis-
tor bypasses R1, filtered by the Ropto, Copto components.
(°) (°)
If the output voltage rises too high, IC1 starts to conduct more current and the LED shines
Phase
Phase
more brightly, causing the phototransistor to bypass more current and pull the junction of R1
Boost
Phase
< 45°
Phase
and R2 closer to Vcc, regulating the output voltage down. If the output voltage falls, the opto- Boost
coupler LED current is decreases and the R1 bypass current also decrease causing the junc- < 45°
tion voltage of R1 and R2 to drop, forcing the op-amp to increase its output drive to compen- 0
sate. The feedback is thus a closed loop, even though the output is galvanically isolated from
the input. 0
a) Double-molded construction b) Co-planar construction Fig. 11.18: Type 1 comparator gain and phase relationship when modified with op-
Outer mold material Inner mold material Silicone gel Sensor to-coupled feedback
IRED
Practical Tip: The gain of the optocoupler (the current transfer ratio, CTR) is both age and
IRED
Film temperature dependent, which makes calculating the tolerances tricky. The datasheet CTR
figure is usually given at 25°C, but it will increase if the temperature drops and decrease if
Sensor the temperature rises. At 100°C ambient, the CTR will be around 70% of the datasheet value.
The main problem is that the optocoupler is typically positioned very close to the power trans-
former as they are both placed across the isolation gap. The transformer can run very hot under
Fig. 11.17: Types of optocoupler: a) is the over-and-under type, b) the side-by-side full load conditions and the heat radiating out can easily cause the CTR to become too low
type for proper regulation. The optocoupler output current can be increased by increasing the LED
current, but then the no-load power consumption can become significant. Also, the aging of the
The over-and-under type (figure 11.17a) typically has a transparent high dielectric strength optocoupler is very dependent on the LED drive current, so increasing the LED current from,
film between emitter and receiver to improve the isolation withstand voltage. say, 5mA to 15mA will reduce the effective lifetime (the point where the CTR drops to 50% of its
The total internal reflection type (figure 11.17b) is a more complicated construction method, nominal value) from around 400k hours to 150k hours. Thus the position of the optocoupler on
but does not need a separating film and has a lower coupling capacitance as the input and the PCB and its ambient temperature affects the optimal resistor values that need to be chosen!
output planes are sideways on.
146 147
The gain/phase characteristic of a power supply will have multiple overlying components
11.6 Secondary-side feedback compensation caused by the contributions from the power stage, compensation network and other control
loop elements. It is possible to calculate all of the terms involved and guarantee stability under
It is also possible to add additional components to compensate on the secondary side for all operating conditions by design, but confirmation by real-life measurement is needed to
deficiencies in gain or boost. One common amendment is to add Rcomp and Ccomp components check that component tolerances and temperature effects do not cause the power supply to
to cancel out the unwanted zero caused by the output capacitor’s own ESR: drift into a region where instability can occur.
Vout
11.7 Magnetic feedback
Rcomp
As mentioned previously, the CTR of an optocoupler varies with temperature and degrades
RLED Ccomp C out with age. It also deteriorates when subjected to radiation in the form of neutron bombardment
or gammas rays. The radiation permanently damages the sensitive photo junction in the re-
R1x ceiving transistor as well as reducing the efficacy of the LED, eventually reducing the CTR to
(Cout,ESR) near zero. This makes optocoupler feedback undesirable for military, space or high-altitude
Cx
applications.
An alternative to opto-coupled isolators is to use magnetic feedback. A separate transformer
R2x can be used to close the feedback loop while keeping the isolation intact. There are several
ways of doing this:
Fig. 11.19: Output Capacitor ESR zero cancellation (Rcomp, Ccomp) A secondary side powered PWM oscillator drives a small signal transformer with a PWM sig-
nal that is proportional to the output voltage. The output winding on the primary side is rectified
Another useful secondary-side compensation technique is to add HF bypass components and smoothed to deliver a control voltage for the main switching oscillator:
across the LED current limiting resistor to increase the useful bandwidth of the opto-coupler
(the response time is dependent on the LED current) and to ensure that a minimum current Vcc Vout
R mag
always flows through the shunt regulator.
C mag
C1 R1 PWM R1x Cout
Vout -
+ Vref R2 IC1
Ccomp R2x
Cx
Care needs to be taken to ensure that the circuit starts up correctly as the feedback regu-
lation transformer is powered by the output voltage. Therefore, the same circuit is shown
R2x here as used with the previous opto-coupler feedback design, R1 and R2 set the maximum
permissible output voltage which can then only be regulated down by the feedback from the
PWM oscillator. The PWM oscillator needs to run at a high enough frequency to ensure a
Fig. 11.20: High frequency boost (Rcomp, Ccomp) fast response to load changes and to keep the ripple acceptable without making Cmag too big.
148 149
A good starting point would be x10 to x20 the main oscillator frequency. sampling window even shorter. It can be nearly impossible to get an accurate feedback volt-
The advantage of this design is that it will work with any single-output topology; forward, age to ensure proper regulation. Therefore, direct magnetic feedback should only be used
flyback or resonant. The disadvantages are that the response time is relatively slow, so it is with power supplies with a minimum load specification.
not suitable for dynamic loads and that the output voltage always peaks to the maximum on
DS/H
power-up unless a soft-start circuit is used.
S/H C S/H
Control
Lfb
11.7.2 Direct magnetic feedback
VDC
Lout1 Lout2
DReset D1
Forward converters rely on an output inductor to store energy and maintain the output voltage
T1 Cout1 RLoad1
during the power transformer reset. The current in the output inductor ramps up and down con-
Cin Np Nr Ns D2
tinuously, so the inductor can be used as the primary winding of a feedback transformer without VS/H
any additional circuitry on the secondary side. This solves one of the major problems of all sec- Q1
PWM
ondary feedback circuits: namely how to reliably power the necessary feedback components on Controller
the secondary side? If the power supply is started up with a short or an overload on the output,
D3
then output regulation can be very difficult to control as the output voltage cannot rise fully. Cout2 RLoad2
D4
With direct magnetic feedback, the voltage induced on the primary-side winding of the feed-
back transformer is sampled just after the main power switch is turned off by a sample-and-
hold circuit and then buffered to be used to control the main oscillator: Fig. 11.23: Direct sampling magnetic feedback with multiple outputs
DS/H
C S/H
11.7.3 Primary-side driven magnetic feedback
S/H
Control
Lfb One further method of implementing magnetic feedback deserves a mention, and that is a pri-
VDC mary-side driven signal transformer. This technique combines the previous two examples: a
Lout
DReset D1 PWM-driven 1:1 transformer with fixed operating frequency and a simple sample-and-hold cir-
cuit to detect the appropriate measurement point in the cycle. Its main advantage is that the
Cout RLoad
D2
secondary side feedback circuit is separately powered from the main power stage so will func-
Cin Np Nr Ns
VS/H tion correctly even if the output is turned off. The schematic is shown below in figure 11.24:
T1
PWM Q1
Controller
VS/H Power Q2
Stage PWM
Controller
S/H
Fig. 11.22: Direct-sampling magnetic feedback Control Vout
The advantage of this circuit is the simplicity of implementation on the secondary side and its CS/H DS/H D Shunt
Lfb,pri Lfb,sec 1
accuracy, as the sample-and-hold window can be adjusted to ignore any switching transients Regulator
and to sample the induced output voltage only when it is stable. It also works well with multi-
ple outputs that share a common output magnetic core (figure 11.23). The induced feedback Fixed Q1
Frequency
signal is then the summation of the output voltages. PWM
The disadvantage of direct sampling is the difficulty of maintaining proper regulation under no
load conditions. With no output load, the power switch on-time becomes very short and the Fig. 11.24: Magnetically coupled shunt regulator schematic
150 151
The topology is essentially flyback. When the PWM signal is high, current flows through the A 1:1:1 transformer is used so that one output winding can be half-wave rectified by D2 to
primary winding and the transformer core becomes magnetized. Due to the reversed output create an isolated supply voltage for the shunt regulator. As this winding is not reversed with
winding, no current flows through the shunt regulator as the negative output voltage is blocked respect to the primary, the current that flows into Ccv is not measured by the hold capacitor
by the diode D1. When the PWM signal is low, the output voltage becomes positive as the CH due to the blocking diode DH (the voltage on the primary side is positive and equal to the
magnetic field inside the core collapses, but is now clamped by the shunt regulator at a volt- voltage on the output capacitor CCV minus one diode drop).
age determined by the output voltage Vout
The voltage across CH slowly charges up through R1 and R2, “resetting“ the negative hold ca-
The reflected voltage on the primary side is the same as on the secondary side minus the di- pacitor voltage. When Q1 is switched off, the output voltages are reversed. Now D2 is reverse
ode drop, but with reversed polarity. The negative primary voltage can be sampled using the biased and D1 is forward biased.
simple peak detector formed from DS/H and CS/H and then inverted or used as a negative refer-
ence voltage to modulate the feedback of the main power stage. The reflected primary winding voltage is negative and equal to the shunt regulator voltage plus
the forward drop of D1. The voltage across CH is pulled down via DH to this negative voltage.
If all of the diodes are the same with the same forward voltage drops, then the voltage across
IL�,pri PWM PWM CH is exactly equal to the shunt regulator voltage. Thus, the voltage on the hold capacitor is
on off renewed every cycle and tracks changes in the output voltage accurately. Once the core has
become completely demagnetized, then all of the diodes become reverse biased and no more
current flows. At this point, the PWM signal should be triggered to start the next cycle so that
Vf, D S/H the hold capacitor voltage does not droop.
VL�,pri
VC S/H The disadvantage of this technique is that the peak detector output is negative, so in some
designs, it would need to be inverted with another op-amp stage to be useful. Secondly, the
VOut, reflected transformer must not go be allowed to go into saturation, so the core cannot be made too
small even though the transmitted power is low. Finally, the value for CH is a compromise
VOut Vf, D1 between being high enough for low ripple and low enough for a fast response.
Fig. 11.25: Waveforms of the magnetically coupled shunt regulator The advantages are the cycle-by-cycle tracking of the output voltage and the ability to operate
at high ambient temperatures of 100°C or more as no opto-couplers are used.
A practical circuit is shown below in figure 11.26 using a constant on-time PWM modulation
signal.
mains supply. The advantage of a microprocessor on the output side is that the micropro-
Shunt cessor power supply is much simpler, and the ability to have multiple outputs or switchable
Regulator
constant voltage or constant current modes. The disadvantage is that start-up into a short
Fig. 11.26: Practical circuit for a magnetically coupled shunt regulator circuit may be compromised.
Microprocessors are nowadays so cheap that it is often easier to use them on both the prima-
152 153
ry- and secondary-sides and use a digital isolator for communication between them. Capac-
itively coupled digital isolators offer very high isolation (typically 5kVAC/1 minute) in a very
compact package with cleaned-up outputs with well controlled slew rates.
Isolation
Barrier Vcc
Capacitively coupled digital isolators come in two main flavours: modulated or edge triggered.
A modulated digital isolator consists of a capacitively coupled modulator and demodulator Q
Reset Rx
than run at a much higher frequency than the signal bandwidth being transmitted. Data is Tx
Latch
transmitted by On-Off Keying (OOK) meaning that the digital input is simply used to gate a Clk
Set
high frequency oscillator typically running at tens of Megahertz, so data rates from DC up to
100Mbps are possible.
Fig. 11.28: Schematic of a capacitively coupled edge-triggered digital isolator
Edge-triggered digital isolators have lower propagation delays and higher data throughput
Capacitive Isolation Barrier
than modulated digital isolators, but are more expensive and despite the differential inputs can
Transmitter Receiver be more susceptible to interference from stray electric fields.
RF
OSCILLATOR
Input MODULATOR DEMODULATOR Output Although digital isolators find many uses in high end, space and military applications, they are
too expensive for many cost-sensitive industrial and commercial power supplies. Primary-side
regulation (PSR) is the most commonly used method as even the cost of the optocoupler can
be significant in a design with a BoM budget of only a few dollars. PSR also has the advantage
that the auxiliary winding is needed in any case to bootstrap-power the controller IC and to
reduce the power lost in the start-up resistor chain. A typical IC-based PSR topology is shown
below, along with the waveforms.
Input Signal
Vf,Dout
Modulation Signal L1 Np:Ns
Fusible
Resistor RHV 1 DOUT
COUT
RHV 2 D1 Rsupply
RL
AC CIN RL,min
Output Signal CVcc
VW
IDS
R1
IDS
Gnd
which can cause EMI problems if a spread spectrum oscillator is not used or if the PCB layout
is not carefully designed with lots of decoupling capacitors and separated ground/power planes.
Fig. 11.29: Primary-side regulated controller with integrated power switch
The relatively slow reaction time of the demodulator creates a propagation delay of 10-100ns,
which for fast control loops may be significant delay. The alternative is to use edge triggered
communication:
154 155
Ids (MOSFET Drain-to-Source Curren)
Phase 4: The transformer goes into quasi-resonant mode. The auxiliary voltage is monitored
Ipk for the next valley before restarting the cycle. This allows the main power MOSFET to switch
on at the minimum primary voltage to reduce the switching stress.
The big advantage of PSR is the low component count as the necessary PWM control, sam-
ple–and-hold and protection circuitry is all integrated inside the control IC. The auxiliary wind-
ing does not just eliminate the need for an opto-coupler, it also provides enough bootstrap
ID (Diode Current)
power to run the IC. A high value resistor chain RHV1 + RHV2 from the rectified input voltage is
Np
Ipk .___
Ns used to start up the IC, but as soon as it is running, the IC switches to the rectified low voltage
supply from the auxiliary output via Rsupply and D1. This reduces the power consumption con-
siderably and increases the efficiency.
ID.avg =Io
The disadvantages are the need for an auxiliary winding. This does not add much cost, but can
Vw (Auxiliary Winding Voltage)
make the transformer construction more complex, especially if split primary windings are used.
The windings need to be carefully arranged so that the insulation withstand voltage and the
Na clearances are not affected by the extra winding. Also, the topology require discontinuous opera-
VF .____
Ns
Na tion to sample the reflected output voltage on the auxiliary winding correctly, and this makes con-
Vo .____
Ns stant current converters more difficult to design to ensure DCM under all operating conditions.
Also, a dummy load resistor, RLmin, is needed to keep the switching frequency above a mini-
mum limit and to stop the output voltage rising out of specification under no-load conditions
(refer to the next chapter for low power consumption techniques)
tON tD In general, the advantages outweigh the disadvantages to such an extent that quasi-resonant
PSR is the most commonly used AC/DC topology for almost all low power converters.
ts
Phase 2: The MOSFET is turned off and the energy stored in the core is released through the
output diode as the magnetic field collapses. The current through the diode decreases from
a peak current of Ipk times the primary to secondary turns ratio, Np: Ns linearly down to zero.
Phase 3: The voltage on the auxiliary winding, VAW, meanwhile decreases from a peak volt- Fig. 11.31: Photos of the top and bottom sides of the RECOM RAC02 series showing
age of the auxiliary to secondary turns ratio multiplied by (Vout + diode drop, VF) to just Na:Ns the compact assembly and low component count possible with PSR topology
multiplied by Vout as the diode current decreases to zero. At this point the auxiliary winding
voltage is sampled via the resistor divider R1 and R2. The resistor divider ratio is the opposite
of the auxiliary turns ratio, so the voltage on VFB is simply the output voltage. This is used to
regulate the PWM controller.
156 157
Chapter 12 There are several techniques that can be used to reduce the no-load or light-load power
consumption.
L1
Australia High Efficiency ≤ 0.5 W up to 180W Fusible Start-up
Resistor R HV1 Current
Table 12.1: Comparison of standby power consumption limits Running
R HV2 Current
D1
External battery charger power supplies have stricter limits (0.075W up to 50W, 0.15W up to AC CIN Rsupply
250W) as it is assumed that they will be left plugged in yet spend most of their time in standby.
ZD 1 CVcc
Internal built-in power supplies have a more relaxed specification (0.5W in standby, 1W if
there is an active display) as it assumed that the device will be switchedoff or disconnected
C1 C2
if not needed. Vcc
PWM D
Controller
The losses in an AC/DC converter which are not load-dependent can be split into passive and
active elements:
Eq. 12.1:
Fig. 12.1 HV start-up circuit with bootstrap
158 159
Even if the majority of the operating current is provided by the auxiliary winding, significant adjustment between stand-by power consumption and start-up time. The main disadvantages
current still flows through the HV start-up resistors after start-up (equal to the rectified DC are that Q1 must be an expensive high voltage type and the residual losses due to the Zener
mains voltage – ZD1 divided by RHV1 + RHV2). This represents a loss that becomes significant bias current through RHV1 and RHV2.
under no-load conditions. RHV1 and RHV2 cannot be reduced, otherwise the controller IC will
either not have enough current to start up or the start-up time (time to fully charge up CVcc) 12.1.2 Half-wave HV start up
would become unacceptably long.
A variation on the above circuit is to supply the HV start-up dropper resistor through separate
One solution is to disconnect the HC start-up resistors immediately after a successful start-up diodes rather than the output of the bridge rectifier. This adds the cost of the additional diodes,
by adding the components shown in blue in figure 12.2: but halves the voltage drop across the dropper resistor as the AC input is only half-wave rec-
tified instead of being full-wave rectified. The big advantage is that the rectified HV voltage
range between high-line voltage and the low-line is reduced, so in many cases, only one drop-
RHV1 per resistor is needed instead of two, even for a wide range 100-240VAC input. The biggest
RHV3
disadvantage is that CVCC must be made large enough to adequately smooth the half-wave
RHV2 rectified input at the low-line input voltage which can lead to a longer start-up time.
Q1
D1 12.1.3 Bleeder resistor losses
D2 Rsupply
External power supplies that are not permanently wired-in3 require an input discharge circuit
to protect the user from a residual energy shock from the exposed connectors when the pow-
ZD1 CVcc er supply is unplugged. The requirement is that the voltage stored in the input filter (mainly in
the X-capacitor placed across the supply) should be reduced to a safe level (less than 60V)
within 1 second of disconnection (IEC decision: CTL DSH 1080). Simply adding a bleed resis-
Vcc tor, Rdis, across the input would meet this requirement (figure 12.3), but at the cost of a signif-
icant no-load power consumption.
PWM D
Controller
CMC1
Fuse CMC2
Fig. 12.2: Detail of the HV start-up with disconnect circuit Cy
Cx
AC R dis
During start-up, the base of Q1 is clamped at the Zener voltage, VZD1. The controller supply
voltage, Vcc, is one base-emitter drop lower than this. Once the controller has started, the
auxiliary winding increases the Vcc voltage until it is clamped to VZD1 + VfD1, or one diode drop Cy
above the VZD1 Zener voltage. This reverse bias turns off Q1, which was supplying the start-up
current via RHV3. The supply current for the controller is now supplied only from the auxiliary
winding. The no-load residual current is now just the bias current flowing through RHV1+RHV2,
but as this needs to be only just enough to turn on Q1 during start-up, it is much lower than Fig. 12.3: Placement of an X-capacitor bleeder resistor, Rdis
the start-up current needed by the controller IC. A big advantage is that RHV3 can now be made
relatively low to give a high start-up current to give a fast turn-on time without affecting the HV For a 230VAC/50Hz mains supply, a suitable fixed bleeder resistor would consume between
dropper resistor loss after start up. 12mW and 20mW under no-load conditions, depending on the size of the X-capacitor required
(the dropper resistor consumes VAC²/R).
The beauty of this circuit is that it works with any topology or controller, both analogue or dig-
ital. It also has the advantage that if the mains input voltage suffers a brown-out or black-out
4
Note: built-in power supplies or power supplies that are permanently connected to the
sufficiently long to stop the converter from running, it auto-resets. There are controller ICs that
mains supply do not need this protection circuit.
incorporate such auto-disconnect circuits internally, but an external circuit allows more fine
160 161
Alternatively, there are several low power automatic X-capacitor discharge ICs that are avail-
able that monitor the zero-crossing of the input and then discharge the X-capacitor if the Current Transfer Ra�o vs Temperature
mains is disconnected: ILED = 5mA
120
Upper percen�le
CMC1
R2
Cy 40
20
Fig. 12.4: Block diagram of an automatic X-capacitor discharge circuit
0
-50 0 50 100 150
Ct determines the delay time before the discharge is triggered, R1 and R2 limit the discharge Temperature (°C)
current and provide additional surge protection for the IC. Such ICs typically consume only
1mW in standby. Fig. 12.5: Optocoupler LED current and CTR vs temperature graph
12.2 Feedback losses Practical Tip: Under no-load, room temperature conditions, the largest power loss is usually
the feedback circuit which can contribute 10-30mW to the overall power consumption! This is
A secondary side shunt regulator circuit is powered from the output. If an optocoupler is used, because a minimum current of 1mA is required for a 431 shunt regulator to maintain regulation
then the series regulator current limiting resistor, RLED, must be set high enough to drive the and to supply its internal circuitry. However, to compensate for the opto-coupler performance
LED inside the optocoupler with enough current that the opto-transistor functions over the deterioration over time and operating temperature, a minimum of 2mA must be set. For a 12V
entire output voltage (including ripple) and operating temperature range. As the current trans- output, this current alone contributes 24mW on the output side or close to 30mW on the input
fer ratio decreases to as low as 50% at extremes of temperature, an adequate optocoupler side with efficiency losses.
current at lower or higher operating temperatures means at 20°C, the LED current must be
double. On the primary side, the photo-transistor needs a pull-up resistor, Ropto, to ensure correct start
up. This resistor cannot be made too large otherwise the feedback will become unstable or
the optocoupler output will fall below the minimum compensation voltage that the controller
R opto
ILED can accept (Vcomp,min). Many controller ICs include an internal constant-current source for the
opto-coupler input which eliminates the need for an external Ropto pull-up resistor and reduces
Copto the stand-by power consumption. Equation 12.2 shows the calculation to determine the larg-
est acceptable RLED value:
R1 R LED Cout
Eq. 12.2 :
R1x
R2 Cx
IC1
CTRmin is the worst-case current transfer ratio of the optocoupler over the entire operating
R2x temperature range and taking ageing into account. A higher CTR will allow a higher value of
RLED and a lower no-load power consumption.
An alternative solution is to use an active feedback regulator which avoids the minimum cath-
ode current requirement of the 431 shunt regulator. The following example shows a cur-
rent-controlled feedback loop.
162 163
Where VCL is the voltage across the clamp capacitor, f is the switching frequency and ton, D
is the turn-on time for the diode. The clamp losses can be decreased by reducing the volt-
Ropto age across the clamp capacitor (not very helpful as this increases the voltage stress on the
+Vout
Copto switching transistor), by using a faster switching diode to reduce the ton time or by reducing
R1 RLED C R3x
1x
Cout -Vout the switching frequency or load.
C2x
R2 R2x
- + 12.2.2 Variable switching frequency
Rshunt
IC1
-
IC2 + Vref R1x Under full load, the converter will run at the minimum switching frequency determined by the
Rfx
input voltage and minimum off-time of the controller. As the load is reduced, the switching fre-
Fig. 12.6: Active feedback loop control (current controlled) quency will increase as Ipeak reduces and the off time increases. The free-running QR switch-
ing frequency is given by equation 12.4 which is plotted in figure 12.7:
The output current is measured directly using the current shunt resistor Rshunt and then am-
plified by IC1. IC2 adds frequency compensation and supplies the drive current for the op- Eq. 12.4:
to-coupler LED. The advantage of this circuit is that either current or voltage can be used for
the feedback control making a constant voltage or constant current power supply easy to
implement. Also, the gain can be optimized for the best optocoupler performance.
Where VDC is the rectified supply voltage, Vreflected is equal to Vout x turns ratio and Coss is the
There is a further variation on this circuit where the optocoupler op-amp is replaced with a switching transistor drain-source capacitance. For a fixed input and output voltage, the
PWM generator. The PWM output can drive the optocoupler LED harder because as long as switching frequency is inversely proportional to the primary peak current which is load
the mark/space ratio is below 50%, the average current is still low. The output is then integrat- dependent.
ed by Ccomp to recover the original control signal.
280
164 165
increasingly inefficient at loads below 50%. until a lower threshold, VL, is reached, whereupon the controller generates the next burst. The
One solution to this problem is to introduce variable valley switching and pulse skipping under idle time is either fixed (the designer must choose the size of output capacitor to maintain the
light load conditions. output between VH and VL) or can be made variable by changing a timer capacitor or by pro-
gramming an internal register.
12.2.3 Variable valley switching
VO
VH
Under light load conditions, the switching frequency will have reached its maximum. Any fur-
ther reduction in load can only be accommodated by changing from CCM or CrCM mode to VO_Ripple
DCM mode. In effect, the controller does not switch on again after the first minimum (valley), VL
but waits for the second, third, fourth, etc. valley before initiating the next switching cycle (fig-
ure 12.8). The switching voltage increases slightly with each successive valley, but the
t
stretched cycle time reduces the power consumption to give a net reduction in the losses. VDRV Active Idle NDRV
t
TActive T Idle
TBurst
166 167
Alternately, a secondary side SR controller can be used to drive the output MOSFETs. The
For a typical power MOSFET with 2 milliohm RDS,ON resistance, the power loss is only 20µW synchronisation signals can be generated by monitoring the voltage across the MOSFET or,
for a 100mA load current, compared to 60mW for the Si diode equivalent. So even for low more accurately, generated by the primary side controller and transferred using digital isola-
output currents, SR can be a useful technique to reduce the low-load power consumption. tors across the isolation barrier to synchronize the output rectification with the primary switch-
ing controller. The use of a SR controller also allows precise control of the timing and dead-
If the secondary winding output voltage is high enough and CCM or CrCM modes are used, times including a low-load mode with reduced blanking times.
then the MOSFETs can be self-driven. For low output voltages or DCM, the MOSFETs are not
turned on fully for a large part of the switching waveform and the body diodes start to dissipate Q1
too much power. Figure 12.10 shows a typical cross-connected self-driven SR circuit.
T1 R1 R2 Cout
Fig. 12.10: Self-driven SR circuit for higher secondary voltages
VD VG VS ton RL
Q1 toff
T1 Gnd UCC24610
Cout
RL Fig. 12.12: Example of a secondary-side SR controller using MOSFET VDS sensing
If an AC/DC power supply consumes 5mW or less under no-load conditions it is said to have
zero standby power. This is extremely difficult to achieve as primary-side regulation becomes
Q2
unreliable as the output cannot be pre-loaded to keep the output voltage under control and
the power consumption of a secondary-side shunt regulator easily exceeds 5mW. If the PSR
The problem of low gate-source voltages can be overcome by adding an auxiliary secondary controller has a minimum switching frequency limit, then the dummy load can be replaced with
winding to drive the MOSFETs as in figure 12.11. a Zener diode to clamp the output voltage only when it rises too high. However, the output
voltage tolerance must be very wide so that the Zener does not waste power during normal
Naux operation.
T1 Q2
168 169
V HV
Fuse
L1
12.3 Measuring standby power consumption
UCC24650
Wake Cout
Controller RLoad
It is not easy to measure the power consumption of an AC/DC converter in standby without the
AC
D1 use of a power analyser. Especially for very low standby consumption designs (<100mW), an
R1 expensive high-end power analyser is required. The reasons for this are four-fold:
C1 C2 CVcc
R2
1. High sample rate: A high sample rate is needed to capture the short, high-frequency burst
signals. It is not sufficient to just detect the peak input current; the waveform must also be
measured and analyzed. A sample rate of 20MHz is required to accurately measure a short
HV Vcc Vs
Gnd D
Q1 current peak lasting only a few milliseconds.
UCC28730 Cs
PWM
Controller R Cs 2. High sensitivity: The peak input current of a low-standby power converter may be only
100-200µA. To get an acceptable measurement accuracy, a 1-2 µA current resolution is need-
IWAKE
ed. Voltage resolution is not so critical (around 1V volt resolution is acceptable), but care must
be taken when converting to true RMS values (see next section).
VOUT
(ripple)
3. No auto-ranging: As most of the time, the power supply consumes very little power, any
0.97VS&H auto-ranging function will automatically select the highest possible resolution range. When a
(Dotted lines indicate waveforms if sudden burst signal occurs, the autoranging circuit may not react quickly enough. Therefore,
primary-side controller does not
respond to wake-up signal.) the autoranging function must be disabled.
4. Large memory: Due to the high sample rate and very long averaging time (minimum 500
mains cycles), an analyser with a very deep memory is needed.
Fig. 12.13: An example of a zero-standby solution Even with a high-end power analyser costing upwards of 30k€, the no-load power consump-
tion can only be measured with a reliable accuracy of only around ±2%.
Under no-load conditions, the controller goes into deep sleep mode and turns off the main
power stage completely. The power consumption of the controller IC is now minimal and the
output voltage is supplied only by the output capacitor, Cout
If the output voltage drops below a certain limit, then the secondary side wake controller issues
a short burst of pulses across the secondary winding which is detected on the primary side to
wake up the PWM controller and initiate normal operation. The average power consumption of
these short periods of activity interspersed with long sleep periods is below 5mW.
170 171
Chapter 13: So, the only way to measure the RMS value of a discontinuous signal accurately is with an
oscilloscope.
Measuring AC With any digital meter or digital storage oscilloscope (DSO), another important source of error
is the crest factor. This is simply the ratio of the peak to RMS voltage. If a digital meter is to
measure the signal accurately, it must have sufficient dynamic input voltage range to cope
13.1 AC voltage measurements with the crest factor which can vary from 1 for a square wave, √2 for a sine wave up to 10 or
more for an asymmetrically pulsed input.
The simplest way of measuring an AC voltage is to use a multimeter. The meter will respond
to the AC component of the input and ignore any DC offsets. This gives a more-or-less accu-
rate AC value but can lead to false power calculations if the DC component also contributes
A
RMS value=
to the load current. Sine 2
Amplitude, A Crest Factor= √3
Since the average of a purely sinusoidal waveform is zero, the meter needs to measure either
the peak-to-peak voltage, the average rectified voltage or the true RMS voltage. For the same
AC signal, the displayed values will be different! For example, if we set up a waveform gener- RMS value= A
Square
ator to give a sinusoidal waveform output with a peak-to-peak voltage of 10.00V, it will have a Amplitude, A Crest Factor= 1
rectified average voltage of 6.37V and an RMS voltage of 7.07V. Electronic multimeters use
RMS because this is the equivalent DC voltage that would give the same heating effect with A
RMS value=
a resistive load. Triangle √3
Amplitude, A Crest Factor= √3
However, if the AC signal is not a pure sine wave, the readings will be very different depending
on the waveform:
A
Sawtooth RMS value= √3
Response to sine Response to Response to Response to 3 Amplitude, A Crest Factor= √3
wave square wave single phase phase rec�fier with
diode rec�fier on phase missing
Eq. 13.1: ta
RMS value= k(A2 + a -Aa)
2
Amplitude,a 3
Amplitude, A 1
However, the situation is made more complex if the AC signal is discontinuous. Then, even Crest Factor � k
a true RMS voltmeter will not give the correct reading. Unfortunately, such discontinuous T
signals are very common in AC/DC circuits, such as the trapezoidal signal from a switching ta
k
transistor, the saw tooth current through a diode or the triangular voltage across an inductor. RMS value= A 3
Amplitude, A
The equivalent RMS voltage is an integral over time: Crest Factor � 1
k
T
Eq. 13.2:
ta
Aav2 + a
2
RMS value= 12
Amplitude, A Amplitude,a
172 Crest Factor= A 173
3
T
T
ta
k
RMS value= A 3
Amplitude, A
Crest Factor � 1 For most measurements, the 10:1 attenuator setting should be used on the probe. This will
k
T
increase the probe’s DC impedance from 1 Mohm to 10 Mohm and reduce the loading of the
ta
probe on the measured signal at the cost of a less accurate measurement of very small signals.
Aav2 + a
2
RMS value= 12
Amplitude, A Amplitude,a
Crest Factor= A Great care must be taken when measuring high voltages such as AC mains or rectified AC
3
T using oscilloscope probes. The ground connection of the probe is connected to earth via the
power lead, so simply connecting the probe to the high voltage circuit will blow the fuse or trip
ta
Amplitude,a the earth leakage detector in the mains supply.
RMS value= Voffset2(1-k) + k(A2 + a -Aa)
2
3
Amplitude, A
Crest Factor � 1 There are several solutions to this problem:
VOffset k
T 1. Use an isolated active probe.
2. Use an active differential voltage probe (also isolated, but with a higher input voltage
ta
range).
VOffset RMS value= Voffset2+k(A.Voffset + A )
2
3. Run the oscilloscope from a mains isolation transformer and disconnect the ground wire.
Amplitude, A 3
Also make sure that here are no connectors used for remote control (GPIB or USB) that
Crest Factor � 1
k
could ground the oscilloscope through the data lines.
T
Note that option 3 means that any exposed metalwork (for example the BNC connectors and
case of the oscilloscope) may no longer be at ground potential, so be especially careful when
using an isolated oscilloscope. To measure hazardous voltages, use only option 1 or 2.
Fig. 13.3: Discontinuous Waveforms Practical Tip: When using an isolated probe or isolated oscilloscope, the probe tip and probe
ring can be connected between any two arbitrary points on the circuit being tested. However,
Practical Tip: Passive oscilloscope probes must always be calibrated before any AC meas- the ring should be connected to a stable voltage and not a switching node to avoid false read-
urements are taken. All oscilloscopes have a square wave reference output on the front panel. ings. In the following example, the correct way to measure the voltage across a totem pole
The oscilloscope probe should be hooked on to this output and the small variable capacitor in PFC choke is to use two probes and then use the mathematical function of the oscilloscope to
the plug adjusted until the display shows a flat-topped square wave. Figure 13.4 below shows display the difference:
two identical probes connected to the same internal square wave source. Channel 2 is cor-
rectly adjusted. Channel 1 is not:
Isolated
Probe
LPFC
Q2 Q3
AC
C RL
Q1 Q4
Fig. 13.4: Passive oscilloscope probe calibration. Both channels are measuring the
same signal. Channel 1 needs to be calibrated using the trimmer access hole in the
plug (arrowed)
174 175
Isolated
The following diagrams are reproduced from the DC/DC book of knowledge to show the ad-
verse effect of using the ground clip when measuring ripple and noise:
Isolated
Probe A
Isolated
Probe B Q2 Q3
LPFC
AC
C RL
Q1 Q4
Fig. 13.5: Incorrect and correct method of measuring the voltage across a PFC choke.
Both ends of the PFC choke see a varying voltage, so an independent stable refer-
ence point is needed Fig. 13.6: Incorrect and correct way to measure ripple and noise. The measurement
with the earth clip gives an apparent peak-to-peak reading of 142mV. The correct meas-
urement without the clip gives a correct peak-to-peak reading of 56mV
13.1.1 High frequency AC voltage measurements
13.2 AC current measurement techniques
The 10%-90% rise time of a probe is related to its bandwidth with the formula:
This means that the commonly used 20MHz BW limit setting will stop the oscilloscope from If a precision resistor is placed in series in a circuit, the voltage developed across it is directly
reacting to any edges that are faster than around 17.5 ns. This is great for removing unwanted proportional to the current flowing through it. This is the principle by which most multimeters
switching artefacts from low frequency AC/DC converters but not so good for the next gen- with a current input measure current. If the meter has a full-scale reading of ±200mV, a 100
eration of fast switching SiC or GaN-based power supplies where such rise times are part of milliohm shunt resistor will allow up to ±2A to be measured. A very simplified multimeter sche-
the signal. matic with selectable full-scale voltage and current ranges is shown below:
The AC impedance of an oscilloscope probe is the summation of the various impedances in ±100V
series and parallel of its component parts, so the voltage seen by the DSO will be equal to: V 998k
±10V
98k0 V+
Eq. 13.4: ±1V
8k0
A
±2A 2k0
±200mV DPM
0R1
These additional impedances will cause an overshoot (ringing) for a step change which can
usually be successfully damped out by measuring the high frequency signal via a high ohmic V-
Com
series resistor and/or by avoiding the use of the probe ground clip (the clip has the highest
impedance of all of the impedance factors). Fig. 13.7: Multimeter input range selector (simplified)
176 177
The shunt resistor must be kept low-ohmic so that the in-circuit voltage drop is insignificant (in
the example above only 200mV) and to reduce the errors caused by self-heating. All resistive
materials have a temperature coefficient of resistance (TCR) which will cause a change in the
resistance with temperature, so it is important that the shunt resistor is made of a material with
a very low TCR, ideally less than ±100 ppm/°C
M
For a fixed shunt resistor on a PCB that is used to measure direct or alternating currents, the
additional errors caused by the copper tracks can become very significant (copper has a typ-
ical TCR of around +0.004%/°C or +4000ppm/°C). To avoid measurement errors, four-termi-
Rs
nal (kelvin contact) shunt resistors should be used, so that the voltage measurement tracks
are not carrying any significant current themselves:
Fig. 13.9: Shunt resistor with low pass filtering (used to measure the supply current
for a noisy motor in this example)
Practical Tip: Current shunts can run hot enough to affect adjacent components, so always
leave a good clearance gap and use thick copper traces to help dissipate the heat. High
current capability shunts are often raised off from the PCB. This avoids overheating the FR4
Copper Trace material beneath the central high-resistance hot-spot of the shunt and helps with air cooling.
Check also that the expansion coefficients of the shunt and PCB are not too mismatched to
avoid thermally-induced cracking and solder-joint stress.
Current Sensing Resistor Current Sensing Trace
The disadvantages of using a shunt resistor are that the measurement contact is direct with-
out any isolation, the power dissipation in the shunt resistor can affect the readings and very
Fig. 13.8: Four-terminal current sensing shunt resistor low ohmic shunts need high voltage magnification to generate a useful signal which introduc-
es noise, drift and offset errors. Furthermore, high-precision power shunt resistors (0.1% or
The advantage of shunt resistors is that they can be used to measure both DC and AC cur- better) with low TCR and low drift are expensive components.
rents and that they can be suitably dimensioned to measure both very small and very large
currents. With careful track layout, shunt resistors can also be used to accurately measure
high frequency alternating currents. 13.2.2 Shunt + current mirror
Often a simple low pass filter formed by a capacitor in series with the shunt and high ohmic As a current-sensing shunt resistor is not isolated nor necessarily referenced to ground, this
resistors placed in the measurement legs will allow clean current measurements to be made can create problems when attempting to measure the current in a higher voltage circuit. The
even on noisy installations. Finally, the performance does not deteriorate with short-circuit or following example shows how to use a current mirror to voltage-shift the current output to a
high surge currents: there is no avalanche or thermal runaway failure mode. level, say, suitable for the input pin of a microcontroller. DC and AC with DC offset (for exam-
ple output ripple current) can be measured with this circuit.
178 179
I load
DC Supply or I load High voltage
AC with DC Rs
AC or DC
Rs Load
Offset Load Isolation
Barrier
C Cs
Vcc
R>>Rs R>>Rs V out,+
-
Vsense
Rout
+
Isense - + V out,- Isolation
Vcc Op-Amp
Rout V sense
Current
mirror Fig. 13.11: Isolated current sense shunt resistor
Fig. 13.10: Current sense shunt resistor and current mirror level shifter A transformer can be used to measure the AC current flowing in a conductor if the conductor
passes through it to effectively make a single turn:
The voltage developed across the current sense resistor, Rs, is amplified by the op-amp to
Main Primary Main Primary
generate an output current, Isense = Rs /R. As this current is referenced to the high voltage sup- Conductor Conductor
ply, it needs to be current-mirrored to generate an output voltage, Vsense, which is referenced
Hollow Core Ip
to the 5V supply. Is
The Vsense output voltage is: Ammeter
A
C.T. Secondary
Winding
Eq. 13.5:
Is
Primary
Ip
Current Secondary
Winding
13.2.3 Shunt + isolation amplifier Circuit
Construction Symbol
The use of a current mirror in combination with a high-side shunt resistor is useful for medium
supply voltages, but not safe for higher supply voltages. To measure the current in a PFC Fig. 13.12: Current transformer construction
stage or AC conductor, safety isolation is required. One technique to accurately measure AC
or DC currents on a high voltage supply is to use an isolation op-amp with an isolated DC/ The secondary current, IS, is proportional to the primary current, Ip divided by the secondary
DC supply: turns:
180 181
Current transformers (CTs) are useful for measuring high AC currents as the output current
can be made a ratio, for example, of 20:1 to the conductor current by simply winding 20 turns 13.3.1 Compensated CT (AC zero-flux)
on the secondary. If more sensitivity is required, then the primary conductor can be wound
twice around the core to increase the full-scale reading to 10:1 or the secondary turns can be To increase a current transformers low-frequency response, a feedback circuit can be added
increased. Split-core versions are also available that can be clamped around a conductor or to cancel out the load caused by the secondary winding. A separate winding is used to cancel
opened to allow more primary turns to be added without needing to cut the wires. out the magnetic flux in the core:
Practical Tip: Never operate a current transformer without a load. If the output current has a Magne�c flux produced by
Magne�c flux produced by
20:1 attenuation, then the open-circuit output voltage has an x20 multiplication, so a current the current being measured
the secondary current
transformer measuring mains current can easily generate thousands of volts across the ter-
Conductor being
minals if the load is disconnected. Always short-circuit the outputs if the load is not attached! measured
Magne�c core
Current transformers cannot measure DC currents, so only the AC component (for example,
the ripple current) will generate an output signal. As the measurements rely on the perfor- Magne�c ‚
mance of the high permeability magnetic core, a current transformer will have a bandwidth Feedback winding (N)
flux
limit, a rated minimum and maximum primary current, a maximum primary voltage rating and
an accuracy rating (typically between 0.2% and 3%, valid over a primary current in the range Current being
measured Secondary Output (Vout)
of 5% to 120%). Finally, CTs have a maximum output burden rating due to the secondary current
impedance interacting with the ammeter load. If the output load is too high, the output reading
will be too low and the CT will also load the supply.
‚
The main advantages of a current transformer are an output which is also a current source, Difference between the
high isolation withstand voltage, near-lossless measurement and a bidirectional output. magne�c flux produced by the Shunt resistance (r)
curret being measured and the
Figure 13.13 shows a CT used in a high-power phase-shifted full bridge application to provide magne�c flux produced by the AMP
an isolated current feedback signal: secondary curret
Detec�on winding
PWM4
+15V PWM3
+HVDC
Fig. 13.14: AC zero-flux current transformer
Q1 Q1-Q4 Q3
SiC MOSFET
FB CS1 CS2 Q2 Q4 ity, low insertion impedance and a wide bandwidth. However, the detection winding and AC
+15V +15V
amplifier add cost.
Secondary 2
0V
Although similar in appearance to a split-core current transformer, a Rogowski coil (RC) does
+Vref
R-78HB-15-0. 5 not operate in the same way, generating an output voltage proportional to the measured cur-
+Vout +Vin
GND
rent instead of an output current. An RC needs no magnetic core which reduces the cost and
the loading on the primary conductor and the quick response is useful for measuring small,
Voltage Feedback
fast changing currents.
Shunt
Regulator
Fig. 13.13: Current Transformer (CT) used in a 1kW full bridge demonstrator
182 183
transverse (longer) sides unless the charge carriers are influenced by an external magnetic
field. The magnetic field exerts a transverse force which causes a charge imbalance to occur,
resulting in a voltage developing between the transverse sides which is proportional to the
magnetic field strength.
I V=O I VH=V
B
R1
R3
C1 Fig. 13.16: Principle of the Hall-effect sensor
IP
-
+
The Hall voltage, VH, is directly proportional to the bias current, I, and the magnetic field
strength, B, and inversely proportional to the number of charge carriers per unit volume, n, the
charge on each carrier, e, and the thickness of the flat conductor, d:
Fig. 13.15: Rogowski coil
Eq. 13.8:
The output voltage v(t) is dependent on the rate of change of the primary current, Ip:
The Hall-effect will occur in any flat conductor, but as n= 1029 m-3 for copper and n= 1025 m-3
Eq. 13.7: for silicon, the resulting Hall-effect voltage for a silicon conductor will be 1000 times greater.
Therefore, semiconductors are more often used rather than metallic conductors for Hall-ef-
Where A is the cross-sectional area of the core, N the number of secondary turns with length fect sensors.
l and μ0 is the magnetic constant, 4π x 10-7. As these are all fixed units, the resulting output
voltage is simply equal to the rate of change of the primary current dip/dt multiplied by –M, a The bias current, I, can be supplied from a constant current source to create an output that
constant dependent on the mechanical dimensions only. is only dependent on the external magnetic field strength, B or the sensor can be placed be-
tween the poles of a permanent magnet in order to measure an external bias current. In this
The secondary wiring is in a helical arrangement with the return wire passing back under the way, the Hall sensor can measure DC current.
secondary so that both wire ends are at the same end of the open core. This makes it very
useful for clamp-style current meters as no wires bridge the gap. Flexible RC designs exist To use a Hall-effect sensor to measure AC current in an external conductor, it can be placed
where the secondary is wound over a plastic tube that can simply be wrapped around the in the air gap of a transformer core through which the primary conductor passes:
primary conductor or conductors.
As the output is proportional to the rate of change of the primary current rather than its abso-
lute value, the signal is usually integrated with an operational amplifier to generate a voltage
that is directly proportional to the current. This introduces some errors in the measurements
due to amplifier offsets and integration times and creates a frequency response that drops Ip
off at both low and high frequencies. Nevertheless, over a wide range of frequencies the re- VH
sponse is linear and flat.
Amplifier
The Hall-effect current sensor relies on monitoring the voltage induced by a magnetic field
created by the primary current rather than measuring the current directly. Fig. 13.17: Hall-effect current sensor
When current flows through a thin flat conductor, no potential difference appears across the
184 185
Hall-effect current sensors can measure large currents or low currents, depending on how
they are set up. Unlike the Rogowski coil and current transformer, a Hall-effect current sensor
can be used to measure both AC and DC currents.
Fluxgate Fluxgate
sesor sesor
However, the performance of the magnetic core, external magnetic fields and amplifier errors
saturated saturated
such as offsets or gain drift can reduce the measurement accuracy.
A flux-gate current sensor combines elements of both the Hall-effect and AC zero-flux sen-
-1 mT 1 mT B
sors. The current flow through the primary conductor creates a magnetic field which is detect-
ed by a probe coil inside the gap normally occupied by the Hall-effect sensor.
Normal
operation
Input current I area
Core Magnetic
Secondary probe coil
winding
(N tum)
Flux-gate transducers make very good residual current measurement (RCM) sensors. An AC
Output
IH = I cable carrying both live and neutral wires is placed inside the sensor. The magnetic field from
current N
the supply and return conductors cancels out, leaving only any difference to be accurately
Load sensed and amplified.
RL Fluxgate
resistance controller
Amplifier The disadvantage of the flux-gate current sensor is that any residual core magnetism caused
I
VH = RL N by exposure to external magnetic fields will distort the measurements. Smart flux-gate control-
lers have a demagnetisation function to reset the core with a controlled AC drive signal before
Fig. 13.18: Fluxgate current sensor making a new measurement.
The output is amplified and fed back into a secondary winding to nullify the magnetic field as 13.7 GMR current sensor
in the zero-flux sensor. The compensation current can be returned to ground via a resistor to
give an output voltage proportional to the current flowing in the primary conductor. This closed Giant Magnetoresistance (GMR) is a quantum spin effect that causes certain layered ferro-
loop system creates a more accurate measurement than other equivalent current sensors as magnetic materials to change their resistance under the influence of an external magnetic
temperature and ageing effects can be compensated out and it also means that DC currents field. The sensor is placed in the gap of a magnetic core in the same way as the Hall-effect
can be measured. current sensor to measure AC current or placed in a coil to measure DC current.
The magnetic material used has a non-linear B-H characteristic, so it saturates very easily.
The Fluxgate controller uses this non linearity to make a very sensitive measurement system, A GMR sensor consists of a Wheatstone bridge with two active GMR elements and two pas-
relying on the feedback to bring the magnetic flux back to zero for any small changes in pri- sive shielded legs is shown in figure 13.20. This doubles the output sensitivity to the ∆R
mary current and on core saturation to protect the system from heavy over-current situations change to the intrinsic resistance, R, caused by the GMR effect.
such as a primary short circuit.
186 187
V+ Magnetically
GMR Shielded
Resistor Resistor
R-∆R R
V out
R R-∆R
Magnetically GMR
Shielded Resistor
Resistor V-
Fig. 13.20: GMR Wheatstone bridge
The GMR sensor has a very fast reaction time and is very sensitive, so it a useful sensor for
measuring small signal AC currents up to 5MHz. Despite the Wheatstone bridge arrange-
ment, it still needs careful thermal compensation for accurate readings as the GMR effect is
relatively weak.
Current AC or AC AC AC AC or AC or AC or
DC DC DC DC
Yes (AC)
Isolation None Yes Yes Yes or none Yes Yes
(DC)
188
References and Further Reading
Ceraolo, M and Poli, D (2014) “Fundamentals of Electric Power Engineering: From Elec-
tromagnetics to Power Systems”, First Edition, Copyright IEEE, Published by John Wiley
and Sons, Inc.
Lee, B-H and Kim, C-E (2012) “No-Load Power Reduction Technique for AC/DC Adapt-
ers“, IEEE Transactions on Power Electronics, Vol. 27, No. 8
Kolar, J.W and Friedli, T (2011) „The Essence of Three Phase PFC Rectifier Systems“,
PES Laboratory, ETH Zurich, published in the Proceedings of the 33rd IEEE International
Telecommunications Energy Conference, Amsterdam.
Knight, D.W. (2015) “AC Electrical Theory- An introduction to phasors, impedance and
admittance, with emphasis on radio frequencies “, http://www.g3ynh.info/zdocs/AC_the-
ory/AC_theory.pdf
AN-8033 (2009) “Design Guideline for Primary Side Regulated (PSR) Flyback Converter
Using FAN103 and FSEZ13X7”, Fairchiild (now ON Semiconductor)
AN-4147 (2006) “Design Guidelines for RCD Snubber of Flyback Converters”, Fairchild
(now ON Semiconductor)
SLUP340 (2016) “Switch Mode power converter compensation made easy”, Texas In-
struments Inc.
SLUP325 (2014) “Control challenges for Low Power AC/DC Converters”, Texas Instru-
ments Inc.
189
About the Author
About Recom
It was about 30 years ago when we showed our first hand made DC/DC converter to a leading
German manufacturer of cellular phones. The product successfully passed all tests and a few
weeks later we received our first order for 8000 pieces. A new product category was born „DC/
DC converters in the form of a module.
At that time the shift from analogue to digital electronics accelerated the demand for DC/DC
modules due to the need for standardized on-board switching power supplies. In addition, I/O
ports or amplifier channels required isolation to increase safety or to eliminate earth loops -
another important requirement that DC/DC converters could fulfil. RECOM was there from the
very early days to supply reliable, efficient and modular solutions for customers that did not
want to invest the time and effort designing their own discrete converters.
From 2006, RECOM extended its portfolio to include AC/DC converters – primarily for existing
customers that again did not want to invest the time and effort in certifying their own discrete
converters. In the meantime, RECOM offers AC/DC converters from 1W up to 1kW in a variety
of different form factors such as PCB mount, wired, low profile and DIN-rail mounting for use
in both single-phase and three-phase supplies. RECOM plans to expand the AC/DC range
beyond the existing low and mid-range products to break through the 10kW barrier – in effect
offering a “one stop shop” for all DC/DC and AC/DC products for industrial, medical, transport
and household applications.
190
L L1
L2 D5
R1 Q1
D6
D1-D4 Interleaved R3
V+
Q2
PFC
Controller
N R2
Rload
Cout
R4
V-
PWM Low
Impedanc e
Generator
Inj ec�on
R inj Transformer
High
Impedanc e
R1
C1
-
Rin
R2
+ Vref