Transistor SLA4070
Transistor SLA4070
Transistor SLA4070
PNP Darlington
General purpose External dimensions A ••• SLA
3 6 7 10
R1 R2
1 5 8 12
2 4 9 11
R1: 3kΩ typ R2: 100Ω typ
Characteristic curves
IC-VCE Characteristics (Typical) hFE-IC Characteristics (Typical) hFE-IC Temperature Characteristics (Typical)
–8 (VCE=–4V) (VCE=–4V)
10000 10000
IB= –4mA –2mA
typ
–7 5000 5000
–1.2mA
–6
°C
25
–5 =1
–0.8mA Ta 5°C
7 °C
IC (A)
1000 1000 25
hFE
hFE
0°
–4 C
–0.6mA
500 –3
500
–3
–2 –0.4mA
–1 100 100
0 50 50
0 –1 –2 –3 –4 –5 –0.03 –0.1 –0.5 –1 –5 –8 –0.03 –0.1 –0.5 –1 –5 –8
VCE (V) IC (A) IC (A)
VCE(sat)-IC Temperature Characteristics (Typical) VCE(sat)-IB Characteristics (Typical) IC-VBE Temperature Characteristics (Typical)
(IC / IB=1000) (VCE=–4V)
–3 –3 –8
–6
–2 –2
VCE (sat) (V)
IC (A)
–4
IC= –5A
IC= –3A
Ta= –30°C
–1 –1
25°C
–2
25°C
Ta=1
–30°C
125°C
0 0 0
–0.3 –0.5 –1 –5 –8 –0.3 –1 –5 –10 –50 –100 –200 0 –1 –2 –3
IC (A) IB (mA) VBE (V)
Natural Cooling
0µ
Heatsink: Aluminum
s
10 20 in mm
1m
s
10
W
m
ith
–1
Inf
θ j–a (°C/W)
5
15
init
IC (A)
PT (W)
eH
10
0× –0.5
ea
10
tsin
0×
k
10 2
50×
50×
2
Without Heatsink –0.1
1 5
Single Pulse
–0.05 Without Heatsink
Ta=25°C
0.5 0 –0.03
1 5 10 50 100 500 1000 –40 0 50 100 150 –3 –5 –10 –50 –100
PW (mS) Ta (°C) VCE (V)
24
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