Ipd 66031

Data Sheet
PD166031AT1U R07DS1308EJ0100
Rev.1.00
Oct. 30, 2015
INTELLIGENT POWER DEVICE
1. Overview
1.1 Description
Family:
PD166031AT1U is part of 2nd Generation Intelligent Power Devices (IPD). They are N-channel high-side switches
with charge pump, voltage controlled input, diagnostic feedback with proportional load current sense and embedded
protection function. Family includes up to 14 devices depending on on-state resistance, package and channel number
combination.
Scalability:
Variety of on-state resistance combined with standardized package on pin-out give user high flexibility for unit design
depending on target load.
Robustness:
Because of advanced protection method, 2nd Generation Intelligent Power Devices achieve high robustness against
long term and repetitive short circuit condition.
1.2 Features
 Built-in charge pump
 3.3V compatible logic interface
 Low standby current
 Short circuit protection
 Shutdown by over current detection
 Power limitation protection by over load detection (Power limitation: current limitation with delta Tch control)
 Absolute Tch over temperature protection
 Built-in diagnostic function
 Proportional load current sensing
 Defined fault signal in case of abnormal load condition
 Loss of ground protection
 Under voltage lock out
 Active clamp operation at inductive load switch off
 Cross current protection in case of H-bridge high side usage
 AEC Qualified
 RoHS compliant
1.3 Application
 Light bulb switching from 55W to 65W according to on-state resistance
 Switching of all types of 14V DC grounded loads, such as LED, inductor, resistor and capacitor
 Power supply switch, fail-safe switch of 14V DC grounded system
Note: The information contained in this document is the one that was obtained when the document was issued,
and may be subject to change.
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PD166031AT1U 2. Ordering Information
2. Ordering Information
Part No. Nick name Lead plating Packing Package
UPD166031AT1U-E1-AY NHS010A(A) Pure Matte Sn Tape 2500 p/reel TO252-7
Note: Part No. and Nick name are tentative and might change at anytime without notice.
2.1 Nick name
N H S 010 A
A: TO252-7
On-state resistance
B: 12-pin Power HSSOP
S: Single channel C: 24-pin Power HSSOP
D: Dual channel
Q: Quad channel
Nch High-side
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PD166031AT1U 3. Specification
3. Specification
3.1 Block Diagram
3.1.1 Nch High-side Single Device
Voltage and Current Definition
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3.2 Pin Configuration

Tab
3.2.1 TO252-7 Pin Configuration

Pin No. Terminal Name
1 OUT
2 GND
3 IN
4, Tab VCC
5 IS
6 SEN
7 OUT
1 2 3 4 5 6 7
Pin function
Terminal Name Pin function Recommended connection
GND Ground connection Connected to GND through a 100  resistor or a
diode for reverse current protection
Refer chapter 6.
IN Input signal Connected to MCU port through 2k-50K serial
resistor.
IS Current sense and Diagnosis output signal Connected to GND through a 0.67K-5K resistor.
Not connect if this pin is not used.
SEN Sense enable input Connected to MCU port through 2k-50K serial
resistor. Not connect if this pin is not used.
OUT Protected high-side power output Connected to load with small 50-100nF capacitor
in parallel.
VCC Positive power supply for logic supply as well as Connected to battery voltage with small 100nF
output power supply capacitor in parallel.
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3.3 Absolute Maximum Ratings

Ta=25°C, unless other specified
Parameter Symbol Rating Unit Test Condition
Vcc Voltage VCC 28 V
Vcc Voltage at reverse -VCC -16 V RL=2, t<2min,
battery condition RIN=2k, RSEN=2k, RIS=1k, RGND=100
GND Reverse current at IGND(Rev) 200 mA RL=2, t<2min
reverse battery condition
Vcc voltage under Load Vload dump 42 V RI=1, RL=2, RIS=1k, RIN=2k, RSEN=2k,
Dump condition RGND=100, td=400ms
Load Current IL Self limited A
Total power dissipation PD 1.85 W Ta=85°C,
for whole device (DC) Device on 50mm50mm1.5mm epoxy PCB FR4
with 6 cm2 of 70 m copper area
Voltage at IN pin VIN -2 ~ 16 V DC
RIN=2k
-16 At reverse battery condition, t<2min,
RIN=2k, RSEN=2k
IN pin current IIN 10 mA DC
Voltage at IS pin VIS VCC V DC
RIS=1k
-16 V At reverse battery condition, t<2min,
RL=2, RIS=1k
IS Reverse current at IIS(Rev) -30 mA At reverse battery condition, t<2min,
reverse battery condition RL=2
Voltage at SEN pin VSEN -2 ~ 16 V DC
RSEN=2k
-16 At reverse battery condition, t<2min
RIN=2k, RSEN=2k
SEN pin current ISEN 10 mA DC
Channel Temperature Tch -40 to +150 °C
Storage Temperature Tstg -55 to +150 °C
ESD susceptibility VESD 2000 V HBM AEC-Q100-002 std. All pin
R=1.5k, C=100pF
4000 IEC61000-4-2 std.
R=330, C=150pF, VCC, OUT
100nF at VCC and OUT
200 V MM AEC-Q100-003 std.
R=0, C=200pF
Inductive load switch-off EAS 170 mJ VCC=13.5V, Tch,start<150°C, RL=2
energy dissipation single
pulse
Inductive load switch-off EAR 95 mJ VCC=13.5V, Tch,start=85°C, RL=2
energy dissipation
repetitive pulse
Remark) All voltages refer to ground pin of the device
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3.4 Thermal Characteristics
Parameter Symbol Min Typ Max Unit Test Condition

Thermal characteristics Rth(ch-a) 35 °C/W According to JEDEC JESD51-2, -5, -7 on
FR4 2s2p board
Rth(ch-c) 1.0 °C/W
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3.5 Electrical Characteristics
Operation function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Operating Voltage VCC 4.5 28 V VIN=4.5V,
RL=2
Operating current IGND 2.2 4 mA VIN=4.5V
Output Leakage current IL(off) 0.5 A Tch=25°C VCC=13.5V,
VIN=0V,
VSEN=0V,
3 Tch=-40~125°C VIS=0V,
VOUT=0V,
VGND=0V
Standby current ICC(off) 0.5 A Tch=25°C VCC=13.5V,
VIN=0V,
VSEN=0V,
1.5 Tch=-40~85°C VIS=0V,
VOUT=0V,
VGND=0V
On-state resistance Ron 10 m Tch=25°C IL=6.8A
20 Tch=150°C
Low level IN pin voltage VIL 0.8 V
High level IN pin voltage VIH 2.5 V
Low level IN pin current IIL 2 25 A VIN=0.8V
High level IN pin current IIH 2 25 A VIN=2.5V
Clamping IN pin voltage 1) VZIN 5 6 V
Low level SEN pin voltage VSENL 0.8 V
High level SEN pin voltage VSENH 2.5 V
Low level SEN pin current ISENL 2 25 A VSEN=0.8V
High level SEN pin current ISENH 2 25 A VSEN=2.5V
Clamping SEN pin voltage1) VZSEN 5 6 V
Under voltage shutdown VCC(Uv) 4.5 V
Under voltage restart VCC(Cpr) 5.0 V
Turn on time ton 200 s VCC=13.5V, RL=2
Turn on delay time td(on) 100 s
Turn off time toff 200 s
Turn off delay time td(off) 150 s
Slew rate on dV/dton 1.5 V/s
Slew rate off -dV/dtoff 1.5 V/s
Switching drift1) ton-toff -50 +50 s Vcc = 9 to 18V drift from Vcc=13.5V,
Tch=-40 to 150°C drift from Tch=25°C
ton; Vout=Vcc-1.5V after input signal active
Turn on energy loss 1) Eon 1.2 2.4 mJ VCC=13.5V,Tch=25°C, RL=2
Turn off energy loss 1) Eoff 1.2 2.4 mJ
Driving capability 1) Dr(capa) 118 m Tch=25°C, VCC=8~16V
150 Tch=105°C, VCC=8~16V
1) not subjected production test, guaranteed by design
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Protection function
Tch=-40 to 150°C, Vcc=7 to 18V, unless otherwise specified
Over current detection IL(SC) 72 121 A VCC=13.5V, Von=5V, Tch=25°C
current
Current limitation under IL(CL) 53 A VCC=13.5V
power limitation toggling
Current limitation under IL(TT) 21 A VCC=13.5V
absolute thermal toggling
Current limitation trigger Von(CL1) 2.0 V VCC=13.5V
threshold during turn-on
Current limitation trigger Von(CL2) 0.3 V VCC=13.5V
threshold during on-state
Current limitation trigger td(CL) 500 s VCC=13.5V
time after input signal
positive slope
Absolute thermal aTth 150 °C
shutdown temperature
Thermal hysteresis for aTth,hys 20 °C
absolute thermal toggling
Power limitation thermal dTth 50 °C
shutdown temperature
Power limitation restart dTth,rest 25 °C
temperature art
Output clamp at inductive Von,clam 30 40 V VCC=13.5V, IL=40mA, Tch=25°C
load switch off p
Output current while GND IL(GND) 1 mA IIN=0A, ISEN=0A, IGND=0A, IIS=0A
disconnection
Output voltage drop at Vds(rev) 0.9 V Tch=25°C VCC=-13.5V,
reverse battery condition RL=2
0.7 Tch=150°C
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Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Current sense ratio KILIS 6000 7500 9000 IL=7A
5250 7500 9750 IL=1.4A
Current sense drift depend dKILIS -15 15 % VCC=13.5V, Tch,start=25°C, RL=2
on temperature
Sense current offset Iis,offset 2 A IL<10mA
current
Sense current leakage Iis,dis 1 A VIN=0V, VSEN=0V
current
Sense current under fault Iis,fault 3 9.5 mA VCC=13.5V, RIS=0.67k
condition 3.5 9 VCC=13.5V, RIS=1k
3.5 5.5 VCC=13.5V, RIS=2k
Minimum output current for IL(CSE) 10 100 mA IIS>5A
current sense output
Open load detection VOUT(OL) 2.0 5.0 V VIN=0V, Tch = -40~105°C
threshold at off-state
OUT terminal current at IOUT(OL) -1.0 A VIN =0V
Open load condition
Open load detection delay tdop 300 s VIN=4.5V to 0V, VOUT>VOUT(OL)
after input negative slope
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Diagnosis function
Tch=-40 to 150°C, Vcc=7 to 18V, VIN=4.5V, VSEN=4.5V, unless otherwise specified
Sense current settling time tsis(on) 250 s VCC=13.5V, VIN=0V to 4.5V,
after input signal positive IL/IIS=KILIS, RL=2
slope
Sense current settling time tsis(off) 10 s VIN=4.5V to 0V
after input signal negative
slope 1)
Sense current settling time tssen(on) 20 s VSEN=0V to 4.5V, RL=2
after sense enable during
on-state 1)
Sense current settling time tssen(off) 20 s VSEN=4.5V to 0V, RL=2
after sense disable during
on-state 1)
Sense current settling time tsis(LC) 20 s RL=2 to 1
during on-state 1)
Fault signal delay after tdsc(fault) 10 s VIN=0V to 4.5V, IL=IL(SC)
over current detection 1)
Fault signal delay after tdpl(fault) 10 s Von>Von(CL1)
power limitation valid 1)
Fault signal delay after tdpl(off) 30 s Von<Von(CL1)
power limitation invalid 1)
Fault signal delay after tdot(fault) 10 s IISIIS,fault
absolute thermal shutdown
1)
Fault signal delay after tdop(fault) 10 s VIN=0V, VOUT>VOUT(OL)

open load detection at off-
state 1)
Fault signal delay after tdoff(fault) 10 s VIN=4.5V to 0V
input negative slope 1)
1) not subjected production test, guaranteed by design
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3.6 Feature Description
3.6.1 Driving Circuit

The high-side output is turned on, if the input pin is over VIH. The high-side output is turned off, if the input pin is open
or the input pin is below VIL. Threshold is designed between VIH min and VIL max with hysteresis. IN terminal is
pulled down with constant current source.
VIN
IN RESD
0
VOUT IIN
Vcc Internal ground
OFF ON OFF ON
0 t GND
Switching a resistive load Switching lamps
VIN VIN
0 0
IL IL
0 0
VOUT VOUT
Vcc
0 0
IIS IIS
0 t 0 t
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Switching an inductive load
VIN
IL
VOUT
Vcc
Von,clamp
IIS
0 t
The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off,
the voltage of OUT falls below 0V. The gate voltage of SW1 is then nearly equal to GND. Next, the voltage at the
source of SW1 (= gate of output MOS) falls below the GND voltage.
SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit.
When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND.
SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is
not activated.
VCC
RESD
IN ZDAZ ZDAZ
SW1
logic
RESD
SEN
ZDESD
Internal ground OUT
GND IS
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3.6.2 Device behavior at over voltage condition
In case of supply voltage greater than Vload dump, logic part is clamped by ZDAZ (35V min). And current through of
logic part is limited by external ground resistor. In addition, the power transistor switches off in order to protect the load
from over voltage. Permanent supply voltage than Vload dump must not be applied to VCC.
VCC
RESD
IN
RIN RESD
SEN N-ch
logic
RSEN MOSFET
ZDAZ ZDAZ
ZDESD ZDESD OUT
uC Internal ground IPD

GND IS
RGND RIS RL
3.6.3 Device behavior at low voltage condition

If the voltage supply (VCC) goes down under VCC(Uv), the device outputs shuts down. If voltage supply (VCC) increase
over VCC(Cpr), the device outputs turns back on automatically. The device keeps off state after under voltage shutdown.
The IS output is cleared during off-state.
VIN
IL
VCC
VCC(CPr)
VOUT VCC(Uv)
0 t
3.6.4 Loss of Ground protection

In case of complete loss of the device ground connection, but connected load ground, the device securely changes to off
if VIN was initially greater than VIH state or keeps off state if VIN was initially lower than VIL state.
In case of device loss of ground, IN and SEN terminal will/ could/ might be at VCC voltage.
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3.6.5 Short circuit protection
Turn-on in an over load condition including short circuit condition

The device shuts down automatically when condition (a) is detected. The sense pin output Iis,fault. Shutdown is latched
until the next reset via input pin. The device shuts down automatically when condition (b) is detected. The device
restarts automatically in power limitation mode. The device shuts down automatically when condition (c) is detected
and restarts automatically in absolute thermal toggling mode. The device starts current limitation when (d) is detected.
The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) IL > IL(SC)
(b) deltaTch > dTth
(c) Tch > aTth
(d) Von > Von(CL1) after td(CL)
Over load condition including short circuit condition during on-state

The device runs automatically into power limitation mode when condition (a) is detected once after Von < Von(CL2).
The device shuts down automatically when condition (b) is detected. The device restarts automatically in power
limitation mode. The device shuts down automatically when condition (c) is detected and restarts automatically in
absolute thermal toggling mode. The sense pin output Iis,fault during power limitation mode or thermal toggling mode.
(a) Von > Von(CL2)
(b) deltaTch > dTth
(c) Tch > aTth
Power limitation control

Current limitation control with IL(CL) when auto restart from deltaTch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from delta
Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as current
limitation with IL(CL). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during toggling
operation with power limitation mode.
Absolute thermal toggling

Current limitation control with IL(TT) when auto restart from absolute Tch protection.
During the current limitation operation and Von>Von(CL1), the sense pin outputs Iis,fault. Even auto restart from
absolute Tch protection, if Von<Von(CL2) depends on short circuit impedance condition, the device does not operate as
current limitation with IL(TT). In this case, the sense pin output sense current at on-state, Iis,fault at off-state during
toggling operation with thermal toggling mode.
delta Tch
Junction temperature differences between thermal sensor of power area and thermal sensor of control area.
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State transition diagram
Turn-on Over current Thermal
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Shutdown by latch No
Yes
Von < Von(CL1) Over current
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B
Von < Von(CL2) Current limitation

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down
Input C Return No
Yes
IL > IL(NL) Von=Von(NL) Turn-on

No
Yes
B Return
IN = Low
No
Yes
C
Turn-off
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(a) IL > IL(SC)
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before over current detection
C After over current detection
Turn-off Exit from off-latch
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(b) deltaTch > dTth
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before dTcht detection
C During shutdowning by dTth detection

Turn-off During current limitation control
Exit from power limitation control
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(c) Tch > aTth
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before aTcht detection
C During shutdowning by aTth detection

Thermal toggling
Turn-off During current limitation control
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An over load condition which is include a short circuit condition during on-state
(a) Von > Von(CL) with weak short condition
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before Von(CL) detection after turn on
C After Von(CL) detection
Turn-off During shutdowning by dTth detection

During current limitation control
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An over load condition including short circuit condition during on-state

(a) Von > Von(CL) with dead condition
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before Von(CL) detection after turn on
C After Von(CL) detection
Turn-off After over current detection
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(b) deltaTch > dTth
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before dTth detection after turn on
C During shutdowning by dTth

detection
Turn-off Exit from thermal protection control
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(c) Tch > aTth
IN -> High Input
A IL > IL(SC)
No
Thermal Yes
Tch > Tth
Yes
No Shutdown
Yes
IN = Low
C No IL(lim)=IL(TT)
Thermal Yes
Input
Return
B

No td(CL) unexpired
Yes No
Yes dTch > dTth
Thermal Thermal No
Yes
A B
Shutdown
IL > IL(lim)
No
IL(lim)=IL(CL)
Yes Input
Over current Input
IN = Low
C No
Yes
Shutting down?
Input C Return No
Yes

No
Yes
B Return
IN = Low
No
Yes Before aTth detection after turn on
C During shutdowning by aTth

detection
Turn-off Exit from thermal protection control
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3.6.6 Device behavior at small load current conduction

The device has a function which controls Ron in order to improve KILIS accuracy at small load current conduction.
Von (VCC-OUT) is proportionate to IL under normal conditions. Under IL<IL(NL) condition, Ron is controlled to
increase to be Von=Von(NL)=30mV(typ).
Von
Von(NL)
IL(NL) IL
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3.6.7 Diagnostic signal
Truth table
SEN Input Output Diagnostic output 2)
H H VCC IIS = IL/KILIS
Normal Operation
L L 1) < 1A (Iis,dis)
Shutdown by over H L 1) Iis,fault 3)
current detection L L 1) < 1A (Iis,dis)
IIS = IL/KILIS in case of Von<Von(CL1)
VOUT 6)
H Iis,fault 4) in case of Von>Von(CL1)
Power limitation
L 1) Iis,fault 4)
IIS = IL/KILIS in case of Von<Von(CL1)
VOUT 6)
H Iis,fault 5) in case of Von>Von(CL1)
Thermal toggling
L 1) Iis, fault 5)
H VCC < 2A (Iis,offset)
Short circuit to VCC
L VOUT 7) Iis,fault in case of VOUT>VOUT(OL)
H VCC < 2A (Iis,offset)
Open Load
L VOUT 7) Iis,fault in case of VOUT>VOUT(OL)
X 8) L X 8) X 8) < 1A (Iis,dis)
1) In case of OUT terminal is connected to GND via load.

2) In case of IS terminal is connected to GND via resister.
3) IS terminal keeps Iis,fault as long as input signal activate after the over current detection.
4) IS terminal keeps Iis,fault during power limitation if Von>Von(CL1).
5) IS terminal keeps Iis,fault during thermal toggling if Von>Von(CL1)..
6) VOUT depends on the short circuit condition
7) VOUT depends on the ratio of VCC-OUT-GND resistive component.
8) Don’t care
R07DS1308EJ0100 Rev.1.00 Page 24 of 39

Oct. 30, 2015
Current sense output

The device output analog feedback current proportional to output current from IS pin. In the case of much higher
current than nominal load current, current sense output is saturated. In the case of much lower current than nominal load
current, current sense output is above 5A if output current is above IL(CSE) max, current sense output is below 2A,
IIS,offset max, if output current is below IL(CSE) min.
IIS IIS
KILIS=IL/IIS
5uA
2uA
IIS,offset
IL IL
IL(CSE)
Sense current under fault condition

The device output IIS,fault, constant current, from IS pin under fault condition such as after over current detection,
during power limitation and during thermal toggling. IIS,fault is specified with RIS=1k condition. IIS,fault is
attenuated depends on VCC-VIS voltage. Operation point as IIS,fault output is also depends on RIS condition. For
example, In the case of RIS=1k, IIS,fault could be 3.5mA to 9mA, VCC-VIS could be 4.5V to 10V, VIS could be 9V
to 3.5V if VCC=13.5V. In the case of RIS is higher than 1k, Operation point as IIS,fault is lower than specified value
but VIS should be higher than RIS=1k condition.
IIS,fault
1k load line
VCC VCC-VIS
9mA VCC
IS
3.5mA GND
VIS RIS
VCC-VIS
VCC-VIS VIS
VCC
R07DS1308EJ0100 Rev.1.00 Page 25 of 39

Oct. 30, 2015
Sense current settling time
VIN
VSEN
VOUT tsis(on) tsis(LC) tsis(LC)

tssen(off) tssen(on) tsis(off)
IIS
Fault signal delay time at over current detection
VIN
VSEN
Over current detection
VOUT
Iis,fault
IIS
tdsc(fault)
R07DS1308EJ0100 Rev.1.00 Page 26 of 39

Oct. 30, 2015
Fault signal delay time at power limitation
VIN
VSEN
Short circuit appear Short circuit disappear
Power limitation
VOUT tdpl(fault) tdpl(off)
IIS Iis,fault
Fault signal delay time at Thermal toggling
VIN
VSEN
Short circuit appear Power Short circuit disappear
limitation Thermal toggling
VOUT tdpl(fault)
tdpl(off)
Iis,fault
IIS
tsis(off)
R07DS1308EJ0100 Rev.1.00 Page 27 of 39

Oct. 30, 2015
Fault signal delay time at open load detection
VIN
VSEN
Open load condition appear
Open load detection Open load detection
VOUT
Iis,fault
tdop tdop(fault)
IIS
Iis,offset Iis,dis
R07DS1308EJ0100 Rev.1.00 Page 28 of 39

Oct. 30, 2015
3.6.8 Nominal load

Product Nominal load
NHS010A 2.0
3.6.9 Driving Capability

Driving Capability is specified as load impedance. Over current detection characteristics is designed above Driving
Capability characteristics. If estimated load impedance which comes from peak inrush current is lower than Driving
Capability characteristics, this means, the device does not detect inrush current as over current and does not shutdown
the output. Depend on the conditions, Power Limitation function may work during inrush current. If estimated load
impedance which comes from peak inrush current is lower than Driving Capability characteristics, Power limitation
disappear within 30ms. This parameter does not mean that the device can drive the resistive load up to Driving
Capability characteristics.
VIN
IL [A] IL(SC) specified point
NHS010A: 72A
t
115
IL(SC) characteristics
IL
5 13.5 Von [V] t

Driving Capability: 30ms
NHS010A:118m
R07DS1308EJ0100 Rev.1.00 Page 29 of 39

Oct. 30, 2015
3.6.10 Cross current protection in case of H-bridge high side usage

In case of using High side driver in H-bridge circuit,
High side driver protects High side driver itself Vbat
and also low side driver from high power dissipation

by cross current when low side driver switching on.
VCC VCC
OFF ON
IN IN
OUT OUT
Cross Motor
current M current
PWM ON OFF
3.6.11 Measurement condition
Switching waveform of OUT terminal
VIN
ton toff
td(on) td(off)
90% 90%
70% 70%
VOUT
dV/dton -dV/dtoff
30% 30%
10%
10%
R07DS1308EJ0100 Rev.1.00 Page 30 of 39

Oct. 30, 2015
3.7 Package drawing
R07DS1308EJ0100 Rev.1.00 Page 31 of 39

Oct. 30, 2015
3.8 Taping information
3.9 Marking information
66031A
R07DS1308EJ0100 Rev.1.00 Page 32 of 39

Oct. 30, 2015
PD166031AT1U 4. Typical characteristics
4. Typical characteristics
R07DS1308EJ0100 Rev.1.00 Page 33 of 39

Oct. 30, 2015
R07DS1308EJ0100 Rev.1.00 Page 34 of 39

Oct. 30, 2015
R07DS1308EJ0100 Rev.1.00 Page 35 of 39

Oct. 30, 2015
R07DS1308EJ0100 Rev.1.00 Page 36 of 39

Oct. 30, 2015
R07DS1308EJ0100 Rev.1.00 Page 37 of 39

Oct. 30, 2015
PD166031AT1U 5. Thermal characteristics
5. Thermal characteristics
R07DS1308EJ0100 Rev.1.00 Page 38 of 39

Oct. 30, 2015
PD166031AT1U 6. Application example in principle
6. Application example in principle
RIN, RSEN, RAN values are in range of 2k to 50k depending microcontroller while R_L value is typically 4k.
If necessary to raise HBM tolerated dose, adding resister between OUT terminal and Ground is effective. Resister’s
value is typically 100k
GND Network recommendation
In case of V_loaddump < 35V In case of 35V < V_loaddump < 42V
Vbat Vbat
VCC VCC
GND GND
RGND
External diode is recommended in order to External diode and resistor are recommended
prevent reverse current toward control logic in order to prevent reverse current toward
part at reverse battery condition. control logic part at reverse battery condition
and limit the current through ZDAZ at load
dump condition. 100 is recommended as
RGND.
Note: If other component is installed to prevent reverse current at reverse battery condition,
diode is not required in GND Network.
Note: Approx. 1k additional resistor in parallel with the diode is recommended if Vf vaule of
the diode is high.
R07DS1308EJ0100 Rev.1.00 Page 39 of 39

Oct. 30, 2015
Revision History PD166031AT1U Datasheet
Description
Rev. Date Page Summary
1.00 Oct. 30, 2015 1-39 1st issue
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Data Sheet

R07DS1308EJ0100 Rev.1.00 Page 1 of 39

2.1 Nick name

R07DS1308EJ0100 Rev.1.00 Page 2 of 39

3.1 Block Diagram

3.1.1 Nch High-side Single Device

Voltage and Current Definition

R07DS1308EJ0100 Rev.1.00 Page 3 of 39

3.2 Pin Configuration

3.2.1 TO252-7 Pin Configuration

R07DS1308EJ0100 Rev.1.00 Page 4 of 39

3.3 Absolute Maximum Ratings

R07DS1308EJ0100 Rev.1.00 Page 5 of 39

3.4 Thermal Characteristics

Parameter Symbol Min Typ Max Unit Test Condition

Rth(ch-c) 1.0 °C/W

R07DS1308EJ0100 Rev.1.00 Page 6 of 39

3.5 Electrical Characteristics

R07DS1308EJ0100 Rev.1.00 Page 7 of 39

Remark) All voltages refer to ground pin of the device

R07DS1308EJ0100 Rev.1.00 Page 8 of 39

R07DS1308EJ0100 Rev.1.00 Page 9 of 39

Fault signal delay after tdop(fault) 10 s VIN=0V, VOUT>VOUT(OL)

R07DS1308EJ0100 Rev.1.00 Page 10 of 39

3.6 Feature Description

3.6.1 Driving Circuit

Switching a resistive load Switching lamps

R07DS1308EJ0100 Rev.1.00 Page 11 of 39

Switching an inductive load

R07DS1308EJ0100 Rev.1.00 Page 12 of 39

3.6.2 Device behavior at over voltage condition

uC Internal ground IPD

3.6.3 Device behavior at low voltage condition

3.6.4 Loss of Ground protection

R07DS1308EJ0100 Rev.1.00 Page 13 of 39

3.6.5 Short circuit protection

Turn-on in an over load condition including short circuit condition

Over load condition including short circuit condition during on-state

Power limitation control

Absolute thermal toggling

R07DS1308EJ0100 Rev.1.00 Page 14 of 39

State transition diagram

Turn-on Over current Thermal

IN -> High Input

Von < Von(CL2) Current limitation

Over current Input

IL > IL(NL) Von=Von(NL) Turn-on

R07DS1308EJ0100 Rev.1.00 Page 15 of 39

Turn-on in an over load condition including short circuit condition

Turn-on Over current Thermal

IN -> High Input

Von < Von(CL2) Current limitation

Over current Input

IL > IL(NL) Von=Von(NL) Turn-on

C After over current detection

Turn-off Exit from off-latch

R07DS1308EJ0100 Rev.1.00 Page 16 of 39

Turn-on in an over load condition including short circuit condition

Turn-on Over current Thermal