5 BJT 3
5 BJT 3
5 BJT 3
Electronic Circuits
<Chapter 5>
BJTs
OUTLINE
Common-Emitter Amplifiers
Common-Base Amplifiers
Common-Collector Amplifiers (Emitter Followers)
SPICE BJT Models
dc analysis
CC 1 , CC 2 coupling capacitor
CE bypass capacitor
■ ac analysis
■ dc analysis (Assume VBE 0.7 V)
g m I C / VT 0.495m / 25.852m 19.15mA/V
VBB
RB 2
VCC 5.319V VC VCC RC I C 15 8.91 6.09V r / g m 5.22k, ro VA / I C 202k
RB1 RB 2
VE RE I E 8.6 0.5 4.3V Rin RBB // r 64.54k // 5.22k 4.83k
RBB RB1 // RB 2 64.54k
VB VBE VE 5.0V Ro ro // RC 202k // 18k 16.53k
VBB VBE
IE 0.5mA VB 5
RE [ RBB /( 1)] I RB 2 50 A
RB 2 100k Av g m (ro // RC // RL ) 19.15m 9.049k 173.3V/V
I C I E 0.495mA
I RB1 I RB 2 I B 50u 4.95u 54.95A Rin 4.83
I B I C / 4.95A Gv Av 173.3 56.44V/V
Rin Rsig 4.83 10
Bias Analysis
VA 100V, 100, VBE 0.7 V, I C 0.495mA
IC 0.495m
VBE 0.7 V I S 8.612 10 16
eVBE / VT e 0.7 / 25.852 m
Rin RB1 // RB 2 //[( 1)(re RE )] RThev RB1 // RB 2 // Rsig 182k // 100k // 10k 8.658kΩ
182 // 100 //[101 (0.0517 8.6)] 60.1kΩ vo ( RC // RL ) RB1 // RB 2
Gv
vo ( RC // RL ) 0.99(18 // 20) vsig RThev /( 1) re RE RB1 // RB 2 Rsig
Av 1.084V/V
vi re RE 0.0517 8.6 0.99 (18 // 20) 182 // 100
Rin 60.1 8.658 / 101 0.0517 8.6 182 // 100 10
Gv Av 1.084 0.929V/V
Rsig Rin 10 60.1 0.99 1.084 0.866 0.929V/V
Gv 0.929V/V
vout ( RC // R2 )
R1
VThev vin vThev RThev /( 1) re RE
R1 RS
vout ( RC // R2 ) R1
RThev R1 // RS
vin RThev /( 1) re RE R1 RS
R1
Req re 2
1
RE provides a path for the bias current at the cost of lowering the input impedance.
RE shunts the input source current to ground, thus wasting the signal.
For RE to affect the input impedance negligibly, 1
RE re I C RE VT
gm
vout RC
vin CE
RB /( 1) re RE
vout RC Effect of bond wire inductance in a CB stage
vin RB /( 1) re RE
CB ■ The CB gain reduction as a result of an impedance in
series with the base
except for a negative sign, the two stages exhibit ■ This effect is especially pronounced at high frequencies
equal gains. ■ a 5-mm bond wire has an inductance of about 5nH,
RB reduces the voltage gain exhibiting an impedance of 157 ohm at 5 GHz.
R2
Vb VCC
R1 R2
vx
vout v x vout g m RC g m RC
Gv
vin vin v x 1 (1 RE / re ) RS / RE 1 (1 g m RE ) RS / RE
VA
T.E.C. ro RC
Rin RE // r // , Ro ro // RC
1 g m ro
vout RC RC
vout
vThev re RThev re RS // RE Av ( g m g o )(ro // RC )
vx
vout vout RE RC RE g m RC
Gv vout v x vout Rin
vin vThev RS RE re RS // RE RS RE 1 (1 RE / re ) RS / RE Gv Av
vin vin v x Rin Rs
Solution
1 IC 0.461m
Selecting RE 500, for RE re VBE VT ln 25.852m ln 16
712.2mV
gm IS 5 10
Rin re // RE 50 re // 500 1 / re 18m VB VBE RE I E 0.7122 500 (0.461m / 0.99) 0.945V
VC VCC RC I C 1.5 281 0.461m 1.370V
gm 17.82mA/V
re
Selecting I R1 10 I B 0.1I C 46.1A
I C g mVT 17.82m 25.852m 0.461mA
VCC VB 1.5 0.945
R1 12.04k
vout 5 5 I R1 46.1u
g m RC 5 RC 281
vin g m 17.82m VB 0.945
R2 22.78k
I R1 I B 46.1u 4.61u
Incheon National University – 19 – Chong-Gun Yu
PSPICE Example
Bias Analysis
Solution
vout RC
vin 1 / g m Z C1 Z C B /( 1)
vout RC
vin RB /( 1) re RE 10%
RC
RB /( 1) 1 / g m RE
1 1/ gm 20 20
Z C1 C1 70.7 pF
C1 20 50 50 2 900 M
Z CB 1/ gm 1 101 50
Z CB C B 0.7 pF
1 20 C B 20
( RC // R1 )
Av
re1 RS
R
Req RE // re 2 B
1
Req 1 RB
Rin re1 re1 RE // re 2
1 1 1
(a) the current flowing through R1 and R2 is chosen to be much greater than the base current.
(b) the emitter follower can operate with a base voltage near VCC
the collector is tied to VCC → allowing the same voltage for the base without driving Q1 into saturation
RBIB is chosen much less than the voltage drop across RE, thus lowering the sensitivity to β.
the bias current of the follower varies with the supply voltage.
(c) To avoid this effect, integrated circuits bias the follower by means of a current source.
ac analysis
VA VA
Rin RB //( 1)(re RE ) Rin RB //( 1)(re ro // RE )
Ro re // RE Ro re // ro // RE
RE ro // RE
Av Av
re RE re ro // RE
R1 vout RE // R2 // ro R
VThev vin Rout ( RE // R2 // ro ) // re Thev
R1 RS vThev RThev /( 1) re RE // R2 // ro 1
RThev R1 // RS vout RE // R2 // ro R1 R // RS
( RE // R2 // ro ) // re 1
vin RThev /( 1) re RE // R2 // ro R1 RS 1
Active : VBC 0 & | VBC | VT Sat. : VBC 0 & | VBC | VT
I 1 IS vBE / VT I
iE S e vBE / VT I S 1 e iE S e vBE / VT I S e vBC / VT
F F F F
I I 1 I
iDE S (e vBE / VT 1) iDC S (e vBC / VT 1) iC I S e v BE / VT
I S 1 I S e vBE / VT iC I S e vBE / VT S e vBC / VT
F R R R
I 1 1 IS vBE / VT I I
nF nR 1 iB S e vBE / VT I S e iB S e vBE / VT S e vBC / VT
F
F R F F R
I
iBE S (e vBE / nFVT 1) I
F iE iEC iBE S e vBE / VT
F
I iC iEC iBC I S e vBE / VT
iBC S (e vBC / nRVT 1)
R I
iB iBC iBE S e vBE / VT
iCE I S (e vBE / nFVT e vBC / nRVT ) F
v
iCE I S (e vBE / nFVT e vBC / nRVT )1 BC
VA
including Early Effect
Ohmic resistances
■ rC, rE, rx for the collector, emitter, base region
BF and BR
■ the ideal maximum values of the forward and reverse dc current gains
■ are not equal to the constant current-independent parameters βF(βdc)and βR used in the EM model
In SPICE, the Gummel-Poon model automatically simplifies to the EM model when certain model
parameters are not specified (VAF, VAR, IKF, IKR)