FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode

October 2004

FFPF60SA60DS tm

Features 6 A, 600 V, STEALTH™ Dual Diode

• Stealth Recovery trr = 39 ns (@ IF = 8 A) The FFPF60SA60DS is STEALTH™ dual diode with soft
• Max Forward Voltage, VF = 2.4 V (@ TC = 25°C) recovery characteristics. It is silicon nitride passivated ion-
implanted epitaxial planar construction. This device is intended
• 600 V Reverse Voltage and High Reliability
for use as freewheeling of boost diode in switching power
• Avalanche Energy Rated supplies and other power swithching applications. Their low
• RoHS Compliant stored charge and hyperfast soft recovery minimize ringing and
electrical noise in many power switching circuits reducing power
loss in the switching transistors.

Applications
• Switch Mode Power Supplies
• Hard Swithed PFC Boost Diode
• UPS Free wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode TO-220F-3L
1 2 3 1 2 3

Absolute Maximum Ratings (per leg) TC=25°C unless otherwise noted

Symbol Parameter Value Unit
VRRM Peak Repetitive Reverse Voltage 600 V
VRWM Working Peak Reverse Voltage 600 V
VR DC Blocking Voltage 600 V
IF(AV) Average Rectified Forward Current @ TC = 95 °C 8 A
IFSM Non-repetitive Peak Surge Current 80 A
60Hz Single Half-Sine Wave
PD Power Dissipation 26 W
WAVL Avalanche Energy (1A, 40mH) 20 mJ
TJ, TSTG Operating Junction and Storage Temperature - 65 to +150 °C

Thermal Characteristics
Symbol Parameter Value Unit
RθJC Maximum Thermal Resistance, Junction to Case 3.125 °C/W
RθJA Maximum Thermal Resistance, Junction to Ambient 62.5 °C/W

©2004 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FFPF60SA60DS Rev. A
 FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode
Electrical Characteristics (per leg) TC=25 °C unless otherwise noted
Symbol Parameter Min. Typ. Max. Unit
VF * Forward Voltage V
IF = 8 A TC = 25 °C - 2.0 2.4
IF = 8 A TC = 125 °C - 1.6 2.0
IR * Reverse Current µA
@ rated VR TC = 25 °C - - 100
TC = 125 °C - - 1000
trr Maximum Reverse Recovery Time - - 25 ns
(IF = 1 A, di/dt = 100 A/µs, VR = 30 V)
trr Maximum Reverse Recovery Time (IF = 8 - - 30 ns
A, di/dt = 100 A/µs, VR = 30 V)
trr Reverse Recovery Time - 39 - ns
Irr Reverse Recovery Current Reverse - 2 - A
Qrr Recovery Charge - 39 - nC
(IF = 8 A, di/dt = 200 A/µs, VR = 390 V)
*Pulse Test: Pulse Width=300 µs, Duty Cycle=2%

Typical Characteristics

10 o
o
TC = 150 C 100 TC = 150 C
Reverse Current , I R [µA]

o
TC = 25 C
Forward Current , IF [A]

o
TC = 125 C
o
TC = 125 C
10 o
o TC = 100 C
TC = 100 C

1
1

o
0.1 TC = 25 C

0.1 0.001
0.5 1.0 1.5 2.0 2.5 0 50 100 150 200 250 300 350 400 450 500 550 600

Forward Voltage , VF [V] Reverse Voltage , VR [V]

Figure 1. Typical Forward Voltage Drop Figure 2. Typical Reverse Current

vs. Forward Current vs. Reverse Voltage

200
44
Typical Capacitance IF = 8 A
Reverse Recovery Time , trr [ns]

at 0V = 169.3 pF 42 o
Tc = 25 C
40
Capacitance , Cj [pF]

150
38

36
100 34

32

30
50
28

26
0.1 1 10 100 100 200 300 400 500 600
Reverse Voltage , VR [V] di/dt [A/µs]

Figure 3. Typical Junction Capacitance Figure 4. Typical Reverse Recovery Time

vs. di/dt

©2004 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com

FFPF60SA60DS Rev. A
 FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode
Typical Characteristics (Continued)

6 10

Average Forward Current , IF(AV) [A]

IF = 8 A
Reverse Recovery Current , Irr [A]

5 o
TC = 25 C

D
C
3 5

0
0
100 200 300 400 500 600 60 80 100 120 140 160
o
di/dt [A/µs] Case Temperature , TC [ C]

Figure 5. Typical Reverse Recovery Current Figure 6. Forward Curent Derating Curve
vs. di/dt

Test Circuits and Waveforms

VGE AMPLITUDE AND

RG CONTROL dIF/dt
L
t1 AND t2 CONTROL IF dIF trr
IF
dt ta tb
DUT CURRENT
RG SENSE 0
+
VGE VDD 0.25 IRM
t1 MOSFET -
IRM
t2

Figure 7. trr Test Circuit Figure 8. trr Waveforms and Definitions

I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL)) VAVL
L R

CURRENT +
SENSE
IL IL
Q1 VDD
I V

DUT -

t0 t1 t2 t

Figure 9. Avalanche Energy Test Circuit Figure 10. Avalanche Current and Voltage Waveforms

©2004 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com

FFPF60SA60DS Rev. A
 FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode
Package Dimensions

TO-220F
3.30 ±0.10
10.16 ±0.20 ø3.18 ±0.10 2.54 ±0.20
(7.00) (0.70)

6.68 ±0.20

15.87 ±0.20
15.80 ±0.20

(1.00x45°)

MAX1.47
9.75 ±0.30

0.80 ±0.10
(3
0°
)

#1
0.35 ±0.10 +0.10
0.50 –0.05 2.76 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]
4.70 ±0.20

9.40 ±0.20

Dimensions in Millimeters

©2004 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com

FFPF60SA60DS Rev. A
 FFPF60SA60DS 6 A, 600 V, STEALTH™ Dual Diode

©2004 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com

FFPF60SA60DS Rev. A