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    Bipolar Junction Transistor

    Uploaded by

    Chandra Reddy
    - The bipolar junction transistor (BJT) is a three-terminal semiconductor device that uses both holes and electrons to conduct current. It has an emitter, base, and collector terminals. - There are two types of BJTs - NPN and PNP. In an NPN transistor, the emitter and collector are made of N-type semiconductor material, and the base is made of P-type material. - BJTs can be configured in common-base, common-emitter, or common-collector modes. The common-emitter configuration is most widely used in amplifiers due to its high current gain.

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    Bipolar Junction Transistor

    Uploaded by

    Chandra Reddy
    62 views20 pages
    - The bipolar junction transistor (BJT) is a three-terminal semiconductor device that uses both holes and electrons to conduct current. It has an emitter, base, and collector terminals. - There are two types of BJTs - NPN and PNP. In an NPN transistor, the emitter and collector are made of N-type semiconductor material, and the base is made of P-type material. - BJTs can be configured in common-base, common-emitter, or common-collector modes. The common-emitter configuration is most widely used in amplifiers due to its high current gain.

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    - The bipolar junction transistor (BJT) is a three-terminal semiconductor device that uses both holes and electrons to conduct current. It has an emitter, base, and collector terminals. - There are two types of BJTs - NPN and PNP. In an NPN transistor, the emitter and collector are made of N-type semiconductor material, and the base is made of P-type material. - BJTs can be configured in common-base, common-emitter, or common-collector modes. The common-emitter configuration is most widely used in amplifiers due to its high current gain.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    62 views20 pages

    Bipolar Junction Transistor

    Uploaded by

    Chandra Reddy
    - The bipolar junction transistor (BJT) is a three-terminal semiconductor device that uses both holes and electrons to conduct current. It has an emitter, base, and collector terminals. - There are two types of BJTs - NPN and PNP. In an NPN transistor, the emitter and collector are made of N-type semiconductor material, and the base is made of P-type material. - BJTs can be configured in common-base, common-emitter, or common-collector modes. The common-emitter configuration is most widely used in amplifiers due to its high current gain.

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    Bipolar Junction Transistor

    BEEE
    Bipolar Junction Transistor
    • Bipolar junction transistor is three terminal
    device.
    • Bjt is current controlled device.
    • In BJT both electronics and holes are
    constitute current so we can say It is a BIPOLAR
    device.
    • Transistor means transferring the resistance
    from low to higher level .
    Bipolar Junction Transistor
    • There are two type of
    transistor. NPN & PNP.
    • The three terminals are
    Emitter, Base &
    collector.
    • Emitter is moderate in
    size and heavily doped
    , base is thin and lightly
    doped, Collector is
    larger in size and
    moderately doped.
    BJT Construction
    • For NPN transistor , P-type
    single crystal semi conductor
    wafer using “ crystal growth and
    diffusion process.
    • Step-1 P-substrate is to grown
    an N type epitaxial layer on the
    substrate.
    • Step-2: p –region for base ,it is
    process of oxidation ,
    photolithography and diffusion .
    • Step-3: oxidation and
    photolithography is repeated for
    emitter.
    • Step-4: metal contacts of three
    regions is established.
    BJT working principle
    • BJT has two junction J1
    , J2,
    • J1 is between Emitter
    base(EB) and it is always
    forward biased
    • J2 is between Collector
    n and Base(CB) and it is
    always reverse biased.
    • BJT is operated in three
    regions.
    BJT working principle
    • The three regions are
    a. Active regions
    (EB –FB, CB-RB)
    b. Cut-off regions
    (EB-RB, CB-RB)
    c.Saturation regions
    (EB-FB, CB-RB).
    • Un biased condition there • After recombination free
    is no diffusion of electrons diffuse into
    electronics at junction. collector thus constitute Ic
    • Voltage is applied between current.
    base and emitter and it is • From Emitter N electrons
    forward bias. are emitted , (1-x)N
    • Voltage is applied between electrons are recombine
    the collector and base and with holes and xN electrons
    it is in reverse bias. are collected in Collector.
    • Due to forward bias • Due to the reveres bias at
    electronics are diffused CB junction has leakage
    into base. And constitute current Ico
    Current Ie, • Ic= xIe +.Ico
    • In base some of electrons • By kcl Ie = Ib+Ic
    are recombine with holes
    with left over electrons
    constitute current Ib.
    Configuration Of Transistor
    • Among the Three • 1.common emitter
    terminals of transistor , configuration
    making one terminal is • 2.Common Base
    common to input and configuration
    output know as • Common Collector
    Configuration of configuration
    transistor.
    • There are three
    configuration
    Common Base configuration

    • Base is common terminal


    to input and output.
    • It has two characteristics
    a) input characteristics.
    b) out characteristics.
    • Emitter Base junction is
    forward bias.
    • collector base junction is
    reversed bias
    Common Base configuration
    Input characteristics
    • Output voltage(Vcb) is
    constant.
    • very the input voltage (Vbe )
    and Ie is observed.
    • apply kvl at input side
    Ie =Ib+Ic
    Ic= xIe+Ico
    X=Ic/Ib
    Common Base configuration
    Output characteristics
    • Output current is Ic and
    out put voltage is Vcb by
    keeping Ie constant,
    • Ic = xIe +Ico
    • Ic= xIe
    • Ic= Ie ( 0.95 to 0.96)
    • It has three regions 1.
    Active region 2. saturation
    region 3. Cut-off region
    • It has Early effect
    Common Emitter Configuration

    • Emitter is common
    terminal for input and
    output .
    • Common emitter has
    two characteristics
    1. Input characteristics
    2.out put characteristics
    Common Emitter Configuration
    Input Characteristics

    • Vce out put voltage is


    constant.
    • Input voltage (Vbe)is
    increase and Current Ib
    observed.
    • Input put characteristics is
    same as diode forward bias.
    Common Emitter Configuration
    Out put characteristics
    • Input current I b is maintain
    constant .
    • Out voltage is Vce is
    increased .
    • Ie =Ic+Ib
    • Ic =xIe+Ico
    • Ic=x(Ic+Ib)+Ico
    • Ic=(1-x)/(1-x)Ic+xIb/1-x+Ico
    .1/1-x)
    • Beta=Ic/Ib
    Common collector configuration
    • Collector is common
    terminal to input and
    output.
    • it has two
    characteristics
    • Input and output
    characteristics.
    • Emitter base junction
    is forward bias .
    Common collector configuration
    • Input characteristics
    • Base current Ib is input
    current.and emitter
    current is out put
    current, Vce is out put
    voltage
    • vcb is cannot varied
    beyond Vce
    Common collector configuration
    • Output characteristics
    • Ib must be kept
    constant , Ie must
    varied by Vce
    • Gama = Ie/Ib
    • It has three regions
    active region, saturation
    and cut-off region.
    • It has early effect
    Reach through or Punch
    Early Effect through

    • Effective Base width is • Collector base junction is


    reduced while voltage reverse biased as keep on
    Vcb increasing , depletion increasing reverse bias
    region is increases. voltage base width is may
    reduce to zero and causing
    breakdown in the transistor
    is know the reach through
    Transistor As Amplifier

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