First Sensor Application Note

PIN diode with guard ring

Version 27-02-12

Application circuit (Fig.1)

Application notes
• Keep all cathodes including guard rings on virtual or real ground potential [GND = 0 V].
• A single diode cathode (including guard ring) must never float or get disconnected from GND potential.
• The maximum voltage difference between any diode cathode and GND is +3 V / -0.3 V
• The photocurrent must be allowed to flow from or to any virtual or real ground at any time. So the DC input resistance
of the amplifier must not be giga-ohmic (as MOS inputs usually are).
• lf there is more than one photodiode enclosed with a guard diode a single channel input per pixel is the best way to
process the output data. Alternately, an analog switch may be used. The switch matrix must make sure that all pixels
including the guard diode except for the actual measured one are connected to GND.
• The use of a secure current limiter in the reverse operating DC voltage line is recommended. Any overload may produce
heat in the device and / or irreversible breakdown in the input structures of the transimpedance amplifiers or analog switches.
• Fig. 1 shows a sample circuit including the signal delivering diode S1 and the guard ring diodes G1 and G2.
The guard ring diodes G1 and G2 are connected together on chip. Quadrant devices have 4 signal delivery diodes S1 to S4
and one surrounding guard ring diode instead of the two guard ring diodes G1 and G2 drawn in Fig. 1.
The operation mode however is exactly the same as in arrays.
• The guard ring diode must be connected to the circuit at least once per device.
• The outer light shield metal is at backside potential and may be bonded to backside potential.
If this connection is used instead of a true low resistive backside contact, there may be enhanced parasitic resistances
in the signal path, depending on the chip size.
• Please note the gap regions in all avalanche array type devices including quadrants are insensitive to light.
• If a guard ring diode is present it must be connected to the circuit at least once per device.
Multiple connections to the same potential are possible.
• The outer light shield metal is at backside potential and may be bonded to backside potential.
If this connection is used instead of a true low resistive backside contact, there may be enhanced parasitic resistances
in the signal path, depending on the chip size.
• Current should be limited by a protecting resistor or current limiting - IC inside the power supply.
• For low light level applications blocking of ambient light should be used.
• Use low noise read-out - IC.
• Optimized PIN power supplies and evaluation kits are available. Visit our website.
• For further questions please refer to document "Instructions for handling and processing".

European, International Sales: First Sensor AG USA: First Sensor Inc.

Peter-Behrens-Strasse 15 5700 Corsa Avenue #105
12459 Berlin Westlake Village
Germany CA 91362 USA
T +49 30 6399 2399 T +1 818 706 3400
F +49 30 639923-752 F +1 818 889 7053
[email protected] [email protected]
on Note First Sensor Application Note
uard ring PIN diode with guard ring

ion 27-02-12 Version 27-02-12

PIN Series overview

PIN Series Optimized for Application Special features
Series -2* 200…500 nm Analytical instruments, UV/ blue enhanced
readout for scintillators
Series -6b 400…650 nm Photometric illuminometer Blue / green enhanced
Series -5b 360…550 nm Optical fiber communication, High-Speed Epitaxy, blue / green enhanced
Series -5t 400…850 nm high speed photometry High-Speed Epitaxy, low voltage (3.5V)
Series -5t 450…950 nm High-Speed Epitaxy
Series -6 700…950 nm Precision photometry, analytical General purpose, low dark
instruments current, fast response
Series -7 700…1000 nm High energy physics Low capacity, full depletable
Series -Q 900…1100 nm YAG laser detection Enhanced NIR sensitivity, low
voltage, fully depletable, low
Series -i 600…1700 nm Eye-safe laser detection InGaAs photodiodes, high IR
sensitivity, low dark current
Series -X Ionizing radiation Medical, security, material With or without scintillator, ultra
* Please note that Series -2 has opposite polarity w.r.t. the the other series'.

Responsivity (23 °C) Quantum efficiency (23 °C)

0,9
Series 2 100
Series 6b
0,8 Series 5t 90
Series 5
0,7 Series 6 80
Series 7
Responsivity (A/W)

Quantum efficiency (%)

70
0,6 Series Q
60
0,5
50
0,4
40 Series 2
0,3 Series 6b
30 Series 5t
0,2 20
Series 5
Series 6
og switches. 0,1 10 Series 7
Series Q
0,0 0
400 500 600 700 800 900 1000 1100 400 500 600 700 800 900 1000 1100

Wavelength (nm) Wavelength (nm)

PIN part description

From the part description it is possible to conclude the basic geometry of the detector:
Number Two letter designator : device type Number - Number Package desgnator
- PC - PIN photodiode, circular area Active area [mm²] - Series TO/THD/SMD/CLP/CH*
- PS - PIN photodiode, square area Active area [mm²] - Series TO/THD/SMD/CLP/CH*
- PR - PIN photodiode, rectangular area Active area [mm²] - Series TO/THD/SMD/CLP/CH*
- DP - Dual PIN photodiode / bicell Total active area [mm²] - Series TO/THD/SMD/CLP/CH*
- QP - Quadrant photdiode Total active area [mm²] - Series TO/THD/SMD/CLP/CH*
- X - Ionizing raditaion detector Active area [mm²] - Series TO/THD/SMD/CLP/CH*
Pixel count XA - PIN PD array for ionizing radiation Single pixel area [mm²] - Series TO/THD/SMD/CLP/CH*
Pixel count PA - PIN photodiode array Single pixel area [mm²] - Series TO/THD/SMD/CLP/CH*
Pixel count IA - Irregular array Single pixel area [mm²] - Series TO/THD/SMD/CLP/CH*

*Package designator: TO Metal can type package BNC BNC Connector (RF coaxial cable jack)
THD Through hole device package CLP Chip level package
SMD Surface mount device package CH Chip: bare die

Disclaimer: Due to our strive for continuous improvement, specifications are subject to change within our PCN policy according to JESD46C.
European, International Sales: First Sensor AG USA: First Sensor Inc.
Peter-Behrens-Strasse 15 5700 Corsa Avenue #105
12459 Berlin Westlake Village
Germany CA 91362 USA
T +49 30 6399 2399 T +1 818 706 3400
F +49 30 639923-752 F +1 818 889 7053
[email protected] [email protected]