STTH212

High voltage ultrafast diode

Datasheet - production data

Description
This device is an ultrafast diode based on a high
A K
voltage planar technology, it is perfectly suited for
freewheeling, clamping, snubbering,
demagnetization in power supplies and other
A A
power switching applications.
Housed in SMB and SMC packages, this diode
reduces the losses in high switching frequency
K operations.
K
SMB
SMC Table 1: Device summary
Symbol Value
IF(AV) 2A
VRRM 1200 V
Features
Tj 175 °C
 Low forward voltage drop
 High reliability VF (typ.) 1.0 V
 High surge current capability trr (max.) 75 ns
 Soft switching for reduced EMI disturbances
 Planar technology

June 2017 DocID11497 Rev 2 1/11

This is information on a product in full production. www.st.com
Characteristics STTH212

1 Characteristics
Table 2: Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)
Symbol Parameter Value Unit

VRRM Repetitive peak reverse voltage 1200 V

V(RMS) RMS voltage 850 V

Average forward current δ = 0.5, SMB Tlead = 90 °C

IF(AV) 2 A
square wave SMC Tlead = 105 °C

IF(RMS) RMS forward current 10

A
IFSM Forward surge current tp = 8.3 ms 40

Tstg Storage temperature range -50 to +175 °C

Tj Maximum operating junction temperature 175 °C

Table 3: Thermal parameters

Symbol Parameter Maximum Unit
SMB 25
Rth(j-l) Junction to lead °C/W
SMC 20

Table 4: Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C - 10
IR Reverse leakage current VR = VRRM µA
Tj = 125 °C - 100
Tj = 25 °C - 1.75
VF Forward voltage drop Tj = 125 °C IF = 2 A - 1.07 1.50 V
Tj = 150 °C - 1.0 -

To evaluate the conduction losses, use the following equation:

P = 1.26 x IF(AV) + 0.12 x IF2(RMS)
Table 5: Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
IF = 1 A;
Reverse recovery
trr Tj = 25 °C dIF/dt = -100 A/μs; - - 75
time
VR = 30 V ns
Forward recovery
tfr IF = 2 A; - - 500
time
Tj = 25 °C dIF/dt = 50 A/μs;
Forward recovery VFR = 1.1 x VFmax
VFP - - 30 V
voltage

2/11 DocID11497 Rev 2

STTH212 Characteristics
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average Figure 2: Forward voltage drop versus forward
forward current current

P(W)
4.0
δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ =1
3.5

3.0

2.5

2.0

1.5

1.0 T

0.5
IF(AV)(A) δ = tp /T tp

0.0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

Figure 4: Relative variation of thermal impedance

Figure 3: Relative variation of thermal impedance junction to ambient versus pulse duration (Epoxy
junction to ambient versus pulse duration (Epoxy printed circuit board FR4, SCU = 1 cm2)
printed circuit board FR4, SCU = 1 cm2)
Zth(j-a) /Rth(j-a) Zth(j-a) /Rth(j-a)
1.0 1.0
SMB SMC
0.9 Scu = 1 cm² 0.9 Scu = 1 cm²
0.8 0.8
0.7 0.7
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1
t p(s) 0.1
t p(s)
0.0
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

Figure 5: Reverse recovery current versus dIF/dt Figure 6: Reverse recovery time versus dIF/dt
(typical values) (typical values)
IRM(A) t RR(ns)
11 900
V R = 600 V VR = 600 V
10 T j = 125 °C 800 Tj = 125 °C
IF = 2 x IF(AV)
9
700
8 IF = IF(AV)
600
7 IF = 0.5 x IF(AV)
6 500
IF = 2 x IF(AV)
5 400
4 IF = IF(AV)
300
3
200
2
1 100
dIF/dt(A/µs) IF = 0.5 x IF(AV) dIF/dt(A/µs)
0 0
0 20 40 60 80 100 120 140 160 180 200 0 50 100 150 200 250 300 350 400 450 500

DocID11497 Rev 2 3/11

Characteristics STTH212
Figure 7: Reverse recovery charges versus dIF/dt Figure 8: Softness factor versus dIF/dt
(typical values) (typical values)
Q RR(nC) SFACTOR
1400 6.0
VR = 600 V IF = IF(AV)
IF = 2 x IF(AV) 5.5 VR = 600 V
Tj = 125 °C
1200 5.0 Tj = 125 °C

4.5
1000
4.0
800 3.5
IF = IF(AV)
3.0
600 2.5
IF = 0.5 x IF(AV) 2.0
400
1.5
1.0
200
dIF/dt(A/µs) 0.5 dIF/dt(A/µs)
0 0.0
0 50 100 150 200 250 300 350 400 450 500 0 25 50 75 100 125 150 175 200 225 250

Figure 9: Relative variations of dynamic

parameters versus junction temperature Figure 10: Transient peak forward voltage versus
dIF/dt (typical values)
VFP(V)
30
28 IF = IF(AV)
Tj = 125 °C
26
24
22
20
18
16
14
12
10
8
6
4
2 dIF/dt(A/µs)
0
0 10 20 30 40 50 60 70 80 90 100

Figure 11: Forward recovery time versus dIF/dt Figure 12: Junction capacitance versus reverse
(typical values) voltage applied (typical values)
t FR(ns) C(pF)
420 100
IF = IF(AV) F = 1 MHz
400 Vosc = 30 mVRMS
VFR = 1.1 x VF max.
Tj = 125 °C Tj = 25 °C
380
360
340
320
10
300
280
260
240
220 VR(V)
dIF/dt(A/µs)
200 1
0 20 40 60 80 100 1 10 100 1000

4/11 DocID11497 Rev 2

STTH212 Characteristics
Figure 13: Thermal resistance junction to ambient versus copper surface under each lead
(Epoxy printed circuit board FR4, eCU = 35 μm)
Rth(j-a) (°C/W)
110
100
90
80
SMB
70
60 SMC

50
40
30
20
10 SCu(cm²)
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

DocID11497 Rev 2 5/11

Package information STTH212

2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
 Epoxy meets UL94, V0

2.1 SMB package information

Figure 14: SMB package outline

6/11 DocID11497 Rev 2

STTH212 Package information
Table 6: SMB package mechanical data
Dimensions
Ref. Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.0748 0.0965
A2 0.05 0.20 0.0020 0.0079
b 1.95 2.20 0.0768 0.0867
c 0.15 0.40 0.0059 0.0157
D 3.30 3.95 0.1299 0.1556
E 5.10 5.60 0.2008 0.2205
E1 4.05 4.60 0.1594 0.1811
L 0.75 1.50 0.0295 0.0591

Figure 15: SMB recommended footprint

1.62 2.60 1.62

0.064 (0.102) 0.064

2.18
(0.086)

5.84
(0.230)

millimeters
(inches)

DocID11497 Rev 2 7/11

Package information STTH212
2.2 SMC package information
Figure 16: SMC package outline

Table 7: SMC package mechanical data

Dimensions
Ref. Millimeters Inches
Min. Max. Min. Max.
A1 1.90 2.45 0.0748 0.0965
A2 0.05 0.20 0.0020 0.0079
b 2.90 3.20 0.1142 0.1260
c 0.15 0.40 0.0059 0.0157
D 5.55 6.25 0.2185 0.2461
E 7.75 8.15 0.3051 0.3209
E1 6.60 7.15 0.2598 0.2815
E2 4.40 4.70 0.1732 0.1850
L 0.75 1.50 0.0295 0.0591

8/11 DocID11497 Rev 2

STTH212 Package information
Figure 17: SMC recommended footprint
1.54 5.11 1.54
(0.061) (0.201) (0.061)

3.14
(0.124)

8.19
(0.323)

millimeters
(inches)

DocID11497 Rev 2 9/11

Ordering information STTH212

3 Ordering information
Table 8: Ordering information
Order code Marking Package Weight Base qty. Delivery mode
STTH212U U22 SMB 0.110 g 2500 Tape and reel
STTH212S S12 SMC 0.243 g 2500 Tape and reel

4 Revision history
Table 9: Document revision history
Date Revision Changes
28-Jun-2005 1 First issue
Updated cover image.
12-Jun-2017 2
Removed DO-201AD package.

10/11 DocID11497 Rev 2

STTH212

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and
improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST
products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order
acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the
design of Purchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2017 STMicroelectronics – All rights reserved

DocID11497 Rev 2 11/11