Preliminary Datasheet

BCR8LM-14LJ
Triac R07DS0502EJ0200
Rev.2.00
Medium Power Use Oct 14, 2011

Features
 IT (RMS) : 8 A  The Product guaranteed maximum junction
 VDRM : 800 V (Tj=125C) temperature 150C
 IFGTI, IRGTI, IRGT III : 30 mA  Insulated Type
 Viso: 1800V  Planar Type
 UL Recognized: File No. E223904

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3

Applications
washing machine, inversion operation of capacitor motor, and other general purpose control applications

Maximum Ratings
Voltage class
Parameter Symbol Unit Conditions
14
Repetitive peak off-state voltageNote1 VDRM 800 V Tj=125C
700 V Tj=150C
Non-repetitive peak off-state voltageNote1 VDSM 840 V
Notes: 1. Gate open.

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Parameter Symbol Ratings Unit Conditions

RMS on-state current IT (RMS) 8 A Commercial frequency, sine full wave
360conduction, Tc = 107C
Surge on-state current ITSM 80 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t for fusion I2 t 26 A2s Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Peak gate power dissipation PGM 5 W
Average gate power dissipation PG (AV) 0.5 W
Peak gate voltage VGM 10 V
Peak gate current IGM 2 A
Junction Temperature Tj –40 to +150 C
Storage temperature Tstg –40 to +150 C
Mass — 1.5 g Typical value
Isolation voltage Viso 1800 V Ta=25C, AC 1 minute,
T1T2G terminal to case

Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Test conditions
Repetitive peak off-state current IDRM — — 2.0 mA Tj = 150C, VDRM applied
On-state voltage VTM — — 1.6 V Tc = 25C, ITM = 12A,
instantaneous measurement
Gate trigger voltageNote2  VFGT — — 1.5 V Tj = 25C, VD = 6 V, RL = 6 ,
 VRGT — — 1.5 V RG = 330 
 VRGT — — 1.5 V
Gate trigger curentNote2  IFGT — — 30 mA Tj = 25C, VD = 6 V, RL = 6 ,
 IRGT — — 30 mA RG = 330 
 IRGT — — 30 mA
Gate non-trigger voltage VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM
0.1 — — V Tj = 150C, VD = 1/2 VDRM
Thermal resistance Rth (j-c) — — 4.3 C/W Junction to case
Note3

Critical-rate of rise of off-state (dv/dt)c 10 — — V/s Tj = 125C

commutation voltageNote4 1 — — V/s Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of decay of on-state commutation current are shown in the table below.

Test conditions Commutating voltage and current waveforms

(inductive load)
1. Junction temperature Supply Voltage Time
Tj = 125C/150C
2. Rate of rise of off-state commutating voltage (di/dt)c
Main Current Time
(dv/dt)c = 4.0 A/ms
3. Peak off-state voltage Main Voltage Time
VD = 400 V (dv/dt)c VD

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Performance Curves

Maximum On-State Characteristics Rated Surge On-State Current

102 100

Surge On-State Current (A)

80
On-State Current (A)

Tj = 150°C
60
101

40

Tj = 25°C 20
100

0
0 1 2 3 4 100 101 102

On-State Voltage (V) Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Gate Characteristics (I, II and III) Junction Temperature
× 100 (%)
103
Typical Example
VGM = 10V PG(AV) = 0.5W
101 PGM = 5W
Gate Trigger Current (Tj = 25°C)
Gate Trigger Current (Tj = t°C)
Gate Voltage (V)

IGM = 2A
VGT = 1.5V IRGT III

102
100
IRGT I, IFGT I

10−1
IFGT I IRGT I, IRGT III VGD = 0.1V
1 2 3
101
10 10 10 104 –40 0 40 80 120 160

Gate Current (mA) Junction Temperature (°C)

Gate Trigger Voltage vs. Maximum Transient Thermal Impedance

Junction Temperature Characteristics (Junction to case)
× 100 (%)

102 103 104

Transient Thermal Impedance (°C/W)

103 5
Typical Example
Gate Trigger Voltage (Tj = 25°C)

4
Gate Trigger Voltage (Tj = t°C)

3
102
2

101 0 −1
–40 0 40 80 120 160 10 100 101 102

Junction Temperature (°C) Conduction Time (Cycles at 60Hz)

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Maximum Transient Thermal Impedance

Characteristics (Junction to ambient) Maximum On-State Power Dissipation
Transient Thermal Impedance (°C/W) 103 16
No Fins

On-State Power Dissipation (W)

14

102 12 360° Conduction

Resistive,
10 inductive loads

101 8

100 4

10−1 1 0
10 102 103 104 105 0 2 4 6 8 10 12 14 16

Conduction Time (Cycles at 60Hz) RMS On-State Current (A)

Allowable Case Temperature vs. Allowable Ambient Temperature vs.

RMS On-State Current RMS On-State Current

160 160
Curves apply regardless All fins are black painted
140 of conduction angle Ambient Temperature (°C)
140 aluminum and greased
Case Temperature (°C)

120 120 t2.3

120 120
100 100 t2.3
100 100 60 60 t2.3

80 80

60 60 Curves apply
regardless of
40 40 conduction angle
360° Conduction Resistive,
20 Resistive, 20 inductive loads
inductive loads Natural convection
0 0
0 2 4 6 8 10 12 14 16 0 2 4 6 8 10 12 14 16

RMS On-State Current (A) RMS On-State Current (A)

Allowable Ambient Temperature vs. Repetitive Peak Off-State Current vs.

× 100 (%)

RMS On-State Current Junction Temperature

160 106
Natural convection Typical Example
Repetitive Peak Off-State Current (Tj = 25°C)

140 No Fins
Ambient Temperature (°C)

Repetitive Peak Off-State Current (Tj = t°C)

Curves apply regardless

120 of conduction angle 105
Resistive, inductive loads
100

80 104

60

40 103

20

0 102
0 0.5 1.0 1.5 2.0 2.5 3.0 –40 0 40 80 120 160

RMS On-State Current (A) Junction Temperature (°C)

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Holding Current vs. Latching Current vs.

Junction Temperature Junction Temperature
× 100 (%)
103 103
Typical Example
Distribution
T2+, G–

Latching Current (mA)

Holding Current (Tj = 25°C)

Typical Example
Holding Current (Tj = t°C)

102

102

101

T2+, G+
Typical Example
T2–, G–
101 100
−40 0 40 80 120 160 –40 0 40 80 120 160

Junction Temperature (°C) Junction Temperature (°C)

Breakover Voltage vs. Breakover Voltage vs.

× 100 (%)
Junction Temperature Rate of Rise of Off-State Voltage (Tj = 125°C)
× 100 (%)

160 160
Typical Example Typical Example
140 Breakover Voltage (dv/dt = 1V/μs) 140 Tj = 125°C
Breakover Voltage (dv/dt = xV/μs)
Breakover Voltage (Tj = 25°C)

120 120
Breakover Voltage (Tj = t°C)

100 100

80 80

60 60
III Quadrant
40 40
I Quadrant
20 20

0 0
−40 0 40 80 120 160 101 102 103 104

Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/μs)

Breakover Voltage vs.

× 100 (%)

Rate of Rise of Off-State Voltage (Tj = 150°C) Commutation Characteristics (Tj = 125°C)

160
Typical Example Main Voltage Time Typical Example
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)

Tj = 150°C (dv/dt)c VD Tj = 125°C

140
Main Current IT = 4A
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)

IT (di/dt)c
120 τ τ = 500μs
Time
VD = 200V
100 f = 3Hz
101
80
Minimum
III Quadrant Characteristics
60 Value I Quadrant

40
I Quadrant
20 III Quadrant
100
0
101 102 103 104 100 101 102

Rate of Rise of Off-State Voltage (V/μs) Rate of Decay of On-State

Commutating Current (A/ms)

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Gate Trigger Current vs.

Commutation Characteristics (Tj = 150°C) Gate Current Pulse Width

× 100 (%)
103
Main Voltage Time Typical Example Typical Example
Critical Rate of Rise of Off-State

Tj = 150°C
Commutating Voltage (V/μs)

(dv/dt)c VD
Main Current IT = 4A IFGT I
IT (di/dt)c
τ τ = 500μs IRGT I

Gate Trigger Current (DC)

Time VD = 200V

Gate Trigger Current (tw)

IRGT III
f = 3Hz
101
III Quadrant
102
I Quadrant

Minimum
Characteristics
Value
100
101 0
100 101 102 10 101 102

Rate of Decay of On-State Gate Current Pulse Width (μs)

Commutating Current (A/ms)

Gate Trigger Characteristics Test Circuits Recommended Circuit Values Around The Triac

6Ω 6Ω Load
C1

A A R1
6V 6V C0 R0
V 330Ω V 330Ω
C1 = 0.1 to 0.47μF C0 = 0.1μF
Test Procedure I Test Procedure II R1 = 47 to 100Ω R0 = 100Ω

6Ω

A
6V
V 330Ω

Test Procedure III

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BCR8LM-14LJ Preliminary

Package Dimensions
Package Name JEITA Package Code RENESAS Code Previous Code MASS[Typ.]
Unit: mm
TO-220FL ⎯ PRSS0003AF-A TO-220FL 1.5g

10.0 ± 0.3 2.8 ± 0.2

3.0 ± 0.3

6.5 ± 0.3
15.0 ± 0.3

φ 3.2 ± 0.2
3.6 ± 0.3

1.15 ± 0.2
12.5 ± 0.5

1.15 ± 0.2

0.75 ± 0.15

0.40 ± 0.15
2.54 ± 0.25 2.54 ± 0.25
4.5 ± 0.2
2.6 ± 0.2

Ordering Information
Orderable Part Number Packing Quantity Remark
BCR8LM-14LJ#B00 Tube 50 pcs. Straight type
BCR8LM-14LJ-A8#B00 Tube 50 pcs. A8 Lead form

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