National Institute of Technology End Sem 2
National Institute of Technology End Sem 2
National Institute of Technology End Sem 2
3. (a) Find the emitter, base, collector voltages and currents using the Figure 3(a).
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(b) Compare and contrast between center tapped full wave rectifier and bridge rectifier.
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4. (a) Draw the three regions of operation of a BJT. Also explain the application of each
3
region of operation.
(b) Given that Ic=2mA, Vce=10V,. Determine R1 and Rc for the network given in Fig 4(b). 2
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5 (a) Explain the various types of biasing of BJT. 3
(b) With a neat diagram explain the device structure and physical operation of
enhancement type MODFET. 2
Basic Electronics/ 2nd semester/Spring semester/P Chongder / M Okade / U K Sahoo/ S Hiremath / ECEPage 1 of 2
6 (a) Draw the three regions of operation of enhancement type MOSFET. Also explain the 3
application of each region of operation
(b) An NMOS transistor have µnCox= 200µA/V2 and L=0.8µm and W=16µm. Find the
value of drain currents(ID) that results when the device operated with VGS =1V,
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VT =0.5V and VDS=1V.
7 (a) With a neat diagram explain instrumentation amplifier and also derive the output 3
voltage.
(b) Briefly discuss two characteristics of an ideal op-amp. 2
8 (a) Find the output voltage(v0) in Fig 8(a) when the input voltage(vI) is 100mV. 3
(b) With a neat diagram explain the operation of integrator circuits and also derive the
output voltage. 2
9 (a) With a neat diagram explain logarithmic amplifier using Op-amp and also derive the
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output voltage.
(b) Determine the output voltage(vo) of the circuit given in Fig 9(b).
Vo
Fig.9(b)
Basic Electronics/ 2nd semester/Spring semester/P Chongder / M Okade / U K Sahoo/ S Hiremath / ECEPage 2 of 2