International eee zoR] Rectifier IRF640 HEXFET® Power MOSFET © Dynamic dvidt Rating © Repetitive Avalanche Rated ane # Fast Switching Voss = 200V © Ease of Paralleling © Simple Drive Requirements Rpg(on) = 0-182 Ip =18A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness, The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings t Parameter ‘Max. Units = 25°C | Continuous Drain Current, Ves @ 10 V 18 }00°C _| Continuous Drain Current, Vas @ 10 V ul A ‘low | Pulsed Drain Current © Po @ Tc= 25°C _| Power Dissipation {Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy @ [Ava nt © : : Repetitive Avalanche Energy © 13 Peak Diode Recovery dv/dt_ @ 5.0 Vins ‘Operating Junction and =55 to +150 ‘Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case) Mounting Torque, 6-32 or M3 screw 10 Ibfein (1.1 Nem) Thermal Resistance [ at Parameter Z Min. Rac Junotion-to-Case = Recs: Case-to-Sink, Flat, Greased Surface = [Re Junetion-to-Ambient = 215IRF640 TOR) Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min. | Typ. | Max. | Units Test Conditions Viernes | Drain-to-Source Breakdown Voltage | 200 | — | & | V_ | Vas=0V, I= 250A ‘AVienpss/ATs| Breakdown Voltage Temp. Coefficient_| — | 029 | — | VPC | Reference to 25°C, lo= 1mA Flosion) ‘Static Drain-o-Source On-Resistance_| — | — | 0.18| @ |Vas=10V,b=11A @ Vestn ‘Gate Threshold Voltage 20 | — | 40 | V_|VosVes, lo= 250A Ge Forward Transconductance 67 | — | — |S |Voss50V, lb=11A @ loss Drain-to-Source Leakage Current —j=+3 a aaa om Sr aa Gate-to-Source Forward Leakage = |= Ti00 | | Gato-to-Source Reverse Leakage = [= [00 | a Total Gate Charge — [= 7 Qos Gate-to-Source Charge — T= 43] ne | Vos=te0v us Gate-to-Drain ("Miller") Charge = |= [39 Vos=10V See Fig. 6 and 13. itor) Tum-On Delay Time =[«T— t Rise Time —lst=)| tae Tum-Off Delay Time = as [= t Fall Time, — [6s Ro=5.42 See Figure 10@ bb Internal Drain Inductance — jas) — Parana] bs Internal Source Inductance — | 75] — es ae ‘| Coss input Capacitance = | 1300 | — Vas=0V “| Coss ‘Ouiput Capacitance = [430 Vos=25V Cae Reverse Transfer Capacitance = [130 J=.0MHz See Figures | Source-Drain Ratings and Characteristics Hee Parameter Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current -|-| | MOSFET symbol tit (Body Diode) a [Showing the - Is Pulsed Source Current cee ee eo integral reverse (Body Diode) © | pe-n junction diode. Is iode Forward Voltage = |= |e0lv Vso 5°, Is 18A, Vas=0V ® Te Reverse Recovery Time — | 300 | 610 | ns 15°C, I=18A Qn Reverse Recovery Charge = [34 [717 nc |oitst=100AIs @ ton Forward Tum-On Time Inivinsic tur-on tne is neglagible (utn-on is dominated by Ls+Lo) Notes: © Repetitive rating; pulse width limited by @ Isost8A, difdts150A/us. VoosVierposs, ‘max. junction temperature (See Figure 11) Tyst50°C ® Voo=60V, starting T=25°C, Le2.7mH © Pulse wicth < 300 us; duty cycle <2%. Ra=250, las=18A (See Figure 12) 216Ip, Drain Current (Amps) |p, Drain Current (Amps) 3 4.5 Bos PULSE WIDTH| Tg = 25°C sot 10 308 Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C 101] 109 fo Vps = 50v wot 20us, PULSE WIDTH; eee Vos. Gate-to-Souree Voltage (volts) Fig 3. Typical Transfer Characteristics IRF640 z <0 £ 5 6 € gs 6 3 20us PULSE WiOTH Tg = s508C wot 1 oF Vos, Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=150°C. g Ns te Te a gos « 6 2-9 a g 3 g 15 22 227 a é Oe $j} jj} 7 Yeu = °- sy aT =20 0 20a GOO 100 a0 140 T60 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 27IRF640 IGR| 3009 5 o Tee TT Cay Cys SHORTED} a 1 pg = 604 = a s Vos ~ 100) a = 6 Vag = 40V | Z zx 1 : rT s | S 2 t 8 3 § | - § g Bs & 2 { g = ; g { SEE FIGURE 13 ie 10 °o is 30 = = 75 Vps; Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 103) Qoesitoy Ty This anes CTMTTEL z 5 By Fos (on) éE 2 f < ZB 02 z 2 ce : a 5 5 0 § of. © 8 £2 é 3° oe “os 3 Terese a pina 2] Tyessoee os = sinove purse ! 18 OS Oe Ey EE ag 8 ee Sant Vgp, Source-to-Drain Voltage (volts) Vos, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage 218TGR’ IRF640 Ip, Drain Current (Amps) WSO Stn To To, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature HERE YEE Ponce) Thermal Response (Zyso) 105 10° 109 Ro ulbe With < tHs Duty Factor 0.1% Fig 10b. Switching Time Waveforms £, DUTY FACTOR, Dety/ty 2. PEEK Tye? oye X Zeman + To oo Oa 1 10 ts, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 219IRF640 Vary ito obtain required tas a Mi 1209 a 7 “Yoo - torn ie é las 54 Pr coe = x0 Fig 12a. Unclamped inductive Test Circuit, Ke Veeross 3 oo 2 2 en 1 a has =o ‘ ° ce 8 50 78 100 125, 150 Starting Ty, Junction Temperatura(?C) ks — — — Fig 12¢. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms ie Pre Curent arent Raga ait ~ sane pe DUT | F : KD soa q tovt dave ff i my T ae | | oa see our. 7-¥0s Vas fu oma. Orange —+ camut npg Pes Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dvidt Test Circuit - See page 1505 Appendix B: Package Outline Mechanical Drawing - See page 1509 Appendix C: Part Marking Information - See page 1516 Intemational Appendix E: Optional Leadforms - See page 1525 TR] Rectifier