SKT340 Series

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SKT 340 Download PDF here

VRRM, ITRMS = 700 A (maximum value for continuous


VRSM
VDRM operation)
V V ITAV = 340 A (sin. 180; DSC; Tc = 82 °C)
900 800 SKT 340/08E
1300 1200 SKT 340/12E
1500 1400 SKT 340/14E
1700 1600 SKT 340/16E
1900 1800 SKT 340/18E
Capsule Thyristor
Symbol Conditions Values Units

Line Thyristor ITAV sin. 180; Tc = 100 (85) °C 230 ( 323 ) A


ID 2 x P8/180; Ta = 45 °C; B2 / B6 300 / 420 A
SKT 340 2 x P8/180F; Ta = 35 °C; B2 / B6 620 / 870 A
Features IRMS 2 x P8/180; Ta = 45 °C; W1C 330 A
ITSM Tvj = 25 °C; 10 ms 5700 A
● Hermetic metal case with ceramic insulator
Tvj = 125 °C; 10 ms 5200 A
● Capsule package for double sided cooling
● Shallow design with single sided cooling i²t Tvj = 25 °C; 8,3 ... 10 ms 162000 A²s
● International standard case Tvj = 125 °C; 8,3 ... 10 ms 135000 A²s
● Off-state and reverse voltages up to 1800 V
VT Tvj = 25 °C; IT = 1000 A max. 1,9 V
VT(TO) Tvj = 125 °C max. 1 V
Typical Applications
rT Tvj = 125 °C max. 0,9 m•
IDD; IRD Tvj = 125 °C; VRD = VRRM; VDD = VDRM max. 40 mA
● DC motor control
(e. g. for machine tools) tgd Tvj = 25 °C; IG = 1 A; diG/dt = 1 A/µs 1 µs
● Controlled rectifiers
tgr VD = 0,67 * VDRM 2 µs
(e. g. for battery charging)
● AC controllers (di/dt)cr Tvj = 125 °C max. 125 A/µs
(e. g. for temperature control)
(dv/dt)cr Tvj = 125 °C ; SKT ...D / SKT ...E max. 500 / 1000 V/µs
● Recommended snubber network
e. g. for VVRMS ≤ 400 V: tq Tvj = 125 °C 50 ... 150 µs
R = 33 •/32 W, C = 0,47 •F IH Tvj = 25 °C; typ. / max. 150 / 400 mA
IL Tvj = 25 °C; typ. / max. 300 / 1000 mA
VGT Tvj = 25 °C; d.c. min. 2 V
IGT Tvj = 25 °C; d.c. min. 150 mA
VGD Tvj = 125 °C; d.c. max. 0,25 V
IGD Tvj = 125 °C; d.c. max. 10 mA
Rth(j-c) cont.; DSC 0,07 K/W
Rth(j-c) sin. 180; DSC / SSC 0,072 / 0,151 K/W
Rth(j-c) rec. 120; DSC / SSC 0,08 / 0,168 K/W
SKT Rth(c-s) DSC / SSC 0,02 / 0,04 K/W
Tvj - 40 ... + 125 °C
Tstg - 40 ... + 130 °C
Visol - V~
F mounting force 4 ... 5 kN
a m/s²
m approx. 61 g
Case B8

Diagrams
Fig. 1L Power dissipation vs. on-state current Fig. 1R Power dissipation vs. ambient temperature

Fig. 2L Rated on-state current vs. case temperature Fig. 2R Rated on-state current vs. case temperature
Fig. 3 Recovered charge vs. currrent decrease Fig. 4 Transient thermal impedance vs. time

Fig. 5 Thermal resistance vs. conduction angle Fig. 6 On-state characteristics


Fig. 7 Power dissipation vs. on-state current Fig. 8 Surge overload current vs. time

Fig. 9 Gate trigger characteristics

Cases / Circuits
Dimensions in mm

Case B 8 (JEDEC: TO-200AB)

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or
suitability.

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