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    Unit 3: MOS Electrostatics: The VS Model Revisited

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    1) The document discusses extending the VS MOSFET model to accurately describe transistor behavior from subthreshold to above threshold operation. 2) A semi-empirical expression for inversion charge Qn is used that allows continuous description of Qn below and above threshold. 3) This extended VS model can accurately fit measured transistor IV curves but some parameters like mobility and saturation velocity still require better physical interpretation at the nanoscale.

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    Unit 3: MOS Electrostatics: The VS Model Revisited

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    al
    34 views16 pages
    1) The document discusses extending the VS MOSFET model to accurately describe transistor behavior from subthreshold to above threshold operation. 2) A semi-empirical expression for inversion charge Qn is used that allows continuous description of Qn below and above threshold. 3) This extended VS model can accurately fit measured transistor IV curves but some parameters like mobility and saturation velocity still require better physical interpretation at the nanoscale.

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    ECEPurdue-MOSFET-Lundstrom-L3.9

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    1) The document discusses extending the VS MOSFET model to accurately describe transistor behavior from subthreshold to above threshold operation. 2) A semi-empirical expression for inversion charge Qn is used that allows continuous description of Qn below and above threshold. 3) This extended VS model can accurately fit measured transistor IV curves but some parameters like mobility and saturation velocity still require better physical interpretation at the nanoscale.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views16 pages

    Unit 3: MOS Electrostatics: The VS Model Revisited

    Uploaded by

    al
    1) The document discusses extending the VS MOSFET model to accurately describe transistor behavior from subthreshold to above threshold operation. 2) A semi-empirical expression for inversion charge Qn is used that allows continuous description of Qn below and above threshold. 3) This extended VS model can accurately fit measured transistor IV curves but some parameters like mobility and saturation velocity still require better physical interpretation at the nanoscale.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 16

    Essentials of MOSFETs

    Unit 3: MOS Electrostatics

    Lecture 3.9:
    The VS Model Revisited
    Mark Lundstrom
    [email protected]
    Electrical and Computer Engineering
    Purdue University
    West Lafayette, Indiana USA

    Lundstrom: 2018 1
    Level 0 VS Model

    Lundstrom: 2018 2
    Level 0 VS model

    1)

    2)
    There are only 8 device-
    specific parameters in
    this model:

    3)

    4)

    5) Lundstrom: 2018 3
    Improving the VS model: inversion charge

    Need to treat both sub-threshold and


    above threshold

    4
    But first: the subthreshold current

    1) subthreshold swing
    2) off-current
    3) on-current

    5
    Lundstrom: 2018
    Subthreshold swing

    Lundstrom: 2018 6
    Subthreshold swing

    Why is a small SS important?

    Lundstrom: 2018 7
    Why is S > 60 mV/decade?

    injection of thermal carriers over a barrier


    8
    Lundstrom: 2018
    Relation between IOFF and ION

    IOFF (nA/um) ION (uA/um)

    A. Steegen, et al., “65nm CMOS


    Technology for low power applications,”
    Intern. Electron Dev. Meeting, Dec. 2005.
    9
    Lundstrom: 2018
    Back to the VS model

    Now let us return to the question at hand:

    “How do we describe Qn(VGS) continuously below and


    above threshold?

    10 Lundstrom: 2018
    Empirical treatment of inversion charge

    correct result

    G. T. Wright, “Threshold modelling of MOSFETs for CAD of CMOS VLSI,”


    Electron Lett., 21, pp. 223–224, Mar. 1985. 11
    Empirical treatment of inversion charge

    correct

    G. T. Wright, “Threshold modelling of MOSFETs for CAD of CMOS VLSI,”


    Electron Lett., 21, pp. 223–224, Mar. 1985. 12
    Empirical treatment of inversion charge
    expression used in the MIT VS Model

    different VT’s in strong and weak


    inversion
    DIBL

    Ali Khakifirooz, Osama M. Nayfeh, and Dimitri Antoniadis, “A Simple Semi-empirical Short-
    Channel MOSFET Current–Voltage Model Continuous Across All Regions of Operation and
    Employing Only Physical Parameters,” IEEE Trans. Electron Devices, 56, pp. 1674-1680, 2009.
    13
    Lundstrom: 2018
    Level 1 VS model

    1)

    2)

    3) Only 10 device-specific
    parameters in this
    4) model:

    5)
    Lundstrom: 2018 14
    Discussion
    With this extension (subthreshold to above threshold
    conduction), the VS model accurately describes modern
    transistors providing:

    1) The high-field saturation velocity is viewed as an


    empirical, fitting parameter.

    2) The mobility of carriers in the inversion is viewed as an


    empirical, fitting parameter.

    3) But we will see later, that these empirical parameters


    can be given a clear, physical interpretation.

    Download the MVS model at: https://nanohub.org/publications/15


    Lundstrom: 2018 15
    Summary

    1) Using a semi-empirical expression for Qn, we have


    extended the VS model to treat subthreshold to
    above threshold.

    2) Excellent fits to measured transistor IV


    characteristics generally result.

    3) But the physical understanding of the mobility and


    saturation velocity at the nanoscale needs to be
    clarified.

    16
    Lundstrom: 2018

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