2N7002K

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Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
FEATURES
SOT-23 (TO-236)
• Low on-resistance: 2 
D • Low threshold: 2 V (typ.) Available
3 • Low input capacitance: 25 pF
Available
• Fast switching speed: 25 ns
• Low input and output leakage
Available
• TrenchFET® power MOSFET
2
S • 2000 V ESD protection
• Material categorization: for definitions of compliance
1 please see www.vishay.com/doc?99912
G
Note
Top View * This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
Marking code: 7K
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details

PRODUCT SUMMARY BENEFITS

VDS (V) 60 • Low offset voltage
RDS(on) max. () at VGS = 10 V 2
• Low voltage operation
Qg typ. (nC) 0.4
• Easily driven without buffer
ID (A) 0.3
• High speed circuits
Configuration Single
• Low error voltage

APPLICATIONS D
• Direct logic-level interface: TTL/CMOS
• Drivers:
relays, solenoids, lamps, hammers, G
display, memories, transistors, etc.
• Battery operated systems
• Solid state relays
S
N-Channel MOSFET

ORDERING INFORMATION
Package SOT-23
Lead (Pb)-free 2N7002K-T1-E3
Lead (Pb)-free and halogen-free 2N7002K-T1-GE3

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 60
V
Gate-source voltage VGS ± 20
TA = 25 °C 0.3
Continuous drain current (TJ = 150 °C) b ID
TA = 100 °C 0.19 A
Pulsed drain current a IDM 0.8
TA = 25 °C 0.35
Power dissipation b PD W
TA = 100 °C 0.14
Maximum junction-to-ambient b RthJA 350 °C/W
Operating junction and storage temperature range TJ, Tstg -55 to +150 °C
Notes
a. Pulse width limited by maximum junction temperature
b. Surface mounted on FR4 board

S17-1299-Rev. F, 21-Aug-17 1 Document Number: 71333

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 2N7002K
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Vishay Siliconix

SPECIFICATIONS (TA = 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. a MAX. UNIT
Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 10 μA 60 - -
V
Gate-threshold voltage VGS(th) VDS = VGS, ID = 250 μA 1 - 2.5
VDS = 0 V, VGS = ± 20 V - - ± 10
μA
VDS = 0 V, VGS = ± 15 V - - 1
Gate-body leakage IGSS VDS = 0 V, VGS = ± 10 V - - ± 150
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C - - ± 1000 nA
VDS = 0 V, VGS = ± 5 V - - ± 100
VDS = 60 V, VGS = 0 V - - 1
Zero gate voltage drain current IDSS μA
VDS = 60 V, VGS = 0 V, TJ = 125 °C - - 500
VGS = 10 V, VDS = 7.5 V 800 - -
On-state drain current b ID(on) mA
VGS = 4.5 V, VDS = 10 V 500 - -
VGS = 10 V, ID = 500 mA - - 2
Drain-source on-resistance b RDS(on) 
VGS = 4.5 V, ID = 200 mA - - 4
Forward transconductance b gfs VDS = 10 V, ID = 200 mA 100 - - mS
Diode forward voltage VSD IS = 200 mA, VGS = 0 V - - 1.3 V
Dynamic a, b

VDS = 10 V, VGS = 4.5 V

Total gate charge Qg - 0.4 0.6 nC
ID  250 mA
Input capacitance Ciss - 30 -
VDS = 25 V, VGS = 0 V
Output capacitance Coss - 6 - pF
f = 1 MHz
Reverse transfer capacitance Crss - 2.5 -
Switching a, c
Turn-on time td(on) VDD = 30 V, RL = 150  - - 25
ns
Turn-off time td(off) ID  200 mA, VGEN = 10 V, Rg = 10  - - 35
Notes
a. For DESIGN AID ONLY, not subject to production testing
b. Pulse test: pulse width  300 μs duty cycle  2 %
c. Switching time is essentially independent of operating temperature

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

S17-1299-Rev. F, 21-Aug-17 2 Document Number: 71333

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 2N7002K
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1.0 1200
7V 6V
VGS = 10 V TJ = - 55 °C
0.8 5V
900

I D - Drain Current (mA)

I D - Drain Current (A)

25 °C
0.6
125 °C
600

0.4 4V

300
0.2

3V
0.0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

4.0 40

3.5 VGS = 0 V
32
R DS(on) - On-Resistance ()

3.0
C - Capacitance (pF)

2.5
24 Ciss

2.0 VGS = 4.5 V

16
1.5 VGS = 10 V
Coss
1.0
8
0.5 Crss

0.0 0
0 200 400 600 800 1000 0 5 10 15 20 25
ID - Drain Current (mA) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

7 2.0

VDS = 10 V VGS = 10 V at 500 mA

R DS(on) - On-Resistance (Normalized)

6
VGS - Gate-to-Source Voltage (V)

ID = 250 mA 1.6
5

1.2 VGS = 4.5 V

4
at 200 mA

3
0.8

2
0.4
1

0 0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)

Gate Charge On-Resistance vs. Junction Temperature

S17-1299-Rev. F, 21-Aug-17 3 Document Number: 71333

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 2N7002K
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1000 5

VGS = 0 V
4

R DS(on) - On-Resistance ()

I S - Source Current (A)

100
3
TJ = 125 °C
ID = 200 mA ID = 500 mA

2
10 TJ = 25 °C

1
TJ = - 55 °C

1 0
0.0 0.3 0.6 0.9 1.2 1.5 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage On-Resistance vs. Gate-Source Voltage

0.4 3

0.2 2.5

ID = 250 µA
VGS(th) Variance (V)

0.0 2
Power (W)

- 0.2 1.5

- 0.4 1
TA = 25 °C

- 0.6 0.5

- 0.8 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Junction Temperature (°C) Time (s)

Threshold Voltage Variance Over Temperature Single Pulse Power, Junction-to-Ambient

S17-1299-Rev. F, 21-Aug-17 4 Document Number: 71333

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 2N7002K
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Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
0.02 t1
1. Duty Cycle, D =
t2
2. Per Unit Base = R thJA = 350 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10-4 10-3 10-2 10-1 1 10 100 600
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Ambient

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10-4 10-3 10-2 10-1 1 10
Square Wave Pulse Duration (s)

Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71333.

S17-1299-Rev. F, 21-Aug-17 5 Document Number: 71333

For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Package Information
Vishay Siliconix

SOT-23 (TO-236): 3-LEAD

3
E1 E
1 2

S e

e1

0.10 mm
C
0.004" C 0.25 mm
A A2 q
Gauge Plane
Seating Plane Seating Plane
A1 C
L
L1

MILLIMETERS INCHES
Dim
Min Max Min Max
A 0.89 1.12 0.035 0.044
A1 0.01 0.10 0.0004 0.004
A2 0.88 1.02 0.0346 0.040
b 0.35 0.50 0.014 0.020
c 0.085 0.18 0.003 0.007
D 2.80 3.04 0.110 0.120
E 2.10 2.64 0.083 0.104
E1 1.20 1.40 0.047 0.055
e 0.95 BSC 0.0374 Ref
e1 1.90 BSC 0.0748 Ref
L 0.40 0.60 0.016 0.024
L1 0.64 Ref 0.025 Ref
S 0.50 Ref 0.020 Ref
q 3° 8° 3° 8°
ECN: S-03946-Rev. K, 09-Jul-01
DWG: 5479

Document Number: 71196 www.vishay.com

09-Jul-01 1
 Application Note 826
Vishay Siliconix

RECOMMENDED MINIMUM PADS FOR SOT-23

0.037 0.022
(0.950) (0.559)
(2.692)

(1.245)
0.106

0.049
(0.724)
0.029

0.053
(1.341)

0.097
(2.459)

Recommended Minimum Pads

Dimensions in Inches/(mm)

Return to Index Return to Index

APPLICATION NOTE

Document Number: 72609 www.vishay.com

Revision: 21-Jan-08 25
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Revision: 01-Jan-2019 1 Document Number: 91000