Y50KPH

PHASE CONTROL THYRISTOR

Features：
 Center amplifying gate
 Metal case with ceramic insulator IT(AV) 1240A
 Low on-state and switching losses
Typical Applications
VDRM/VRRM 1900~3000V
 AC controllers ITSM 20 kA
 DC and AC motor control I2t 2000 103A2S
 Controlled rectifiers

VALUE
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj(C) UNIT
Min Type Max

TC=55C 1460
180 half sine wave 50Hz
IT(AV) Mean on-state current 125 A
Double side cooled,
TC=70C 1240

VDRM Repetitive peak off-state voltage VDRM&VRRM tp=10ms

125 1900 3000 V
VRRM Repetitive peak reverse voltage VDSM&VRSM= VDRM&VRRM+100V

IDRM VDM= VDRM

Repetitive peak current 125 80 mA
IRRM VRM= VRRM

ITSM Surge on-state current 10ms half sine wave 20 kA

125
2 2 VR=0.6VRRM
It I T for fusing coordination 2000 A s*103
2

VTO Threshold voltage 1.11 V

125
rT On-state slop resistance 0.36 mΩ

VTM Peak on-state voltage ITM=2550A, F=24kN 125 2.02 V

dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125 1000 V/μs

VDM= 67%VDRM to1500A,

di/dt Critical rate of rise of on-state current 125 150 A/μs
Gate pulse tr ≤0.5μs IGM=1.5A

ITM=2000A,tp=2000µs, di/dt=-20A/µs,
Qrr Recovery charge 125 1600 µC
VR =50V

IGT Gate trigger current 40 300 mA

VGT Gate trigger voltage VA=12V, IA=1A 25 0.8 3.0 V

IH Holding current 20 300 mA

VGD Non-trigger gate voltage VDM=67%VDRM 125 0.3 V

Thermal resistance
Rth(j-c) 0.020
Junction to case At 1800 sine, double side cooled
C /W
Thermal resistance Clamping force 24kN
Rth(c-h) 0.005
case to heatsink
Fm Mounting force 19 26 kN

Tstg Stored temperature -40 140 C

Wt Weight 440 g

Outline KT50cT

http://www.tech-sem.com Page 1 of 3
 Y50KPH
Peak On-state Voltage Vs.Peak On-state Current
Y50KPH Max . junction To case0.02
Thermai Impedance Vs.Time
4.5 0.025

Transient thermal impedance,°C/W

Instantaneous on-state voltage,volts

4 TJ =125°C
0.02
3.5
0.015
3

2.5
0.01
2
0.005
1.5

1 0
100 1000 10000 0.001 0.01 0.1 1 10
Instantaneous on-state currant,amperes Time,seconds

Fig.1 Fig.2

Y50KPH Vs.Mean
Max . Pow er Dissipation 13 On-state Current Max . Case Temperature Vs.Mean
Y50KPH On-state Current
over
140
3600
180
120
Max.on-state dissipation ,watts

3000 120
0 180 0 180
90
Case temperature,°C

100
Conduction Angle 60 Conduction Angle
2400
80
1800 30 60

1200 40

600 20 30 60 90 120 180

0 0
0 200 400 600 800 1000 1200 1400 0 400 800 1200 1600 2000
Instantaneous on-state currant,amperes Mean on-state current,amperes

Fig.3 Fig.4

Max . Pow er Dissipation

Y50KPH 13 Vs.Mean On-state Current Max . Case Temperature
50KPH Vs.Mean
over On-state Current
2500 140
DC
Max.on-state dissipation ,watts

360 360
270 120
2000 180
Case temperature,°C

100
Conduction Angle 120 Conduction Angle
1500 90
60 80
30
1000 60

40
500
20
30 60 90 120 180 270 DC
0
0
0 200 400 600 800 1000 1200 1400
0 400 800 1200 1600 2000 2400 2800
Instantaneous on-state currant,amperes Mean on-state current,amperes

Fig.5 Fig.6

http://www.tech-sem.com Page 2 of 3
 Y50KPH
Surge Current
20 Vs.Cycles I22000---20
t Vs.Time
24 2100
Total peak half-sine surge current,kA

20 1850

Maximum 2It(Kamps2,secs)
1600
16

1350
12
1100

8
850

4
600
1 10 100
1 10
Cycles at 50Hz Time,m.seconds

Fig.7 Fig.8

Gate characteristic at 25°C junction temperature Gate Trigger Zone at varies temperature
3V,300MA
18 4.5
-30°C
16 4
-10°C

14 PGM=120W 3.5
Gate voltage,VGT ，V

25 °C
Gate voltage,VGT ，V

(100μs spulse) 3
12 max.
125°C
10 2.5

8 2

6 min. 1.5

4 1
P G 2W
2 0.5

0 0
0 4 8 12 16 20 0 100 200 300 400 500 600
Gate current,IGT ，A Gate current,IGT ，mA

Fig.9 Fig.10

Outline:
26±0.5
26.6±0.5

http://www.tech-sem.com Page 3 of 3