DMC6040SSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Product Summary Features and Benefits

ID • Low Input Capacitance
Device V(BR)DSS RDS(on) max
TA = +25°C • Low On-Resistance
•
ADVANCE INFORMATION

Q1 40mΩ @ VGS = 10V 6.5 A Fast Switching Speed

60V
N-Channel 55mΩ @ VGS = 4.5V 5.6 A • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Q2 110mΩ @ VGS = -10V -3.9 A • Halogen and Antimony Free. “Green” Device (Note 3)
-60V
P-Channel 130mΩ @ VGS = -4.5V -3.6 A • Qualified to AEC-Q101 Standards for High Reliability

Description and Applications Mechanical Data

This new generation MOSFET has been designed to minimize the on-
NEW PRODUCT

• Case: SO-8
state resistance (RDS(ON)) and yet maintain superior switching • Case Material: Molded Plastic, “Green” Molding Compound.
performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0
applications. • Moisture Sensitivity: Level 1 per J-STD-020
• DC-DC Converters • Terminal Connections: See Diagram
• Power Management Functions • Terminals: Finish – Tin Finish annealed over Copper leadframe.
• Backlighting Solderable per MIL-STD-202, Method 208 e3
• Weight: 0.074 grams (approximate)

SO-8 D1 D2
S1 D1
Pin1 G1 D1
S2 D2 G1 G2
G2 D2

Top View S1 S2
Top View Pin Configuration Q1 N-Channel MOSFET Q2 P-Channel MOSFET

Ordering Information (Note 4)

Part Number Case Packaging
DMC6040SSD-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

8 5 8 5

= Manufacturer’s Marking
C6040SD = Product Type Marking Code
YYWW = Date Code Marking
C6040SD C6040SD YY or YY = Year (ex: 14= 2014)
YY WW YY WW WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4 1 4

Chengdu A/T Site Shanghai A/T Site

DMC6040SSD 1 of 9 June 2014

Document number: DS36829 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 DMC6040SSD

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Q1 Q2 Units
Drain-Source Voltage VDSS 60 -60 V
Gate-Source Voltage VGSS ±20 ±20 V
ADVANCE INFORMATION

Steady TA = +25°C 5.1 -3.1

ID A
State TA = +70°C 4.1 -2.5
Continuous Drain Current (Note 6) VGS = -10V
TA = +25°C 6.5 -3.9
t<10s ID A
TA = +70°C 5.2 -3.1
Maximum Body Diode Forward Current (Note 6) IS 2.1 -2.1 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) IDM 28 -19 A
Avalanche Current (Note 7) L = 0.1mH IAS 17.2 -17.6 A
NEW PRODUCT

Avalanche Energy (Note 7) L = 0.1mH EAS 14.7 15.4 mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Units
TA = +25°C 1.24
Total Power Dissipation (Note 5) PD W
TA = +70°C 0.8
Steady state 101
Thermal Resistance, Junction to Ambient (Note 5) RθJA °C/W
t < 10s 61
TA = +25°C 1.56
Total Power Dissipation (Note 6) PD W
TA = +70°C 1.0
Steady state 80
Thermal Resistance, Junction to Ambient (Note 6) RθJA
t<10s 49 °C/W
Thermal Resistance, Junction to Case (Note 6) RθJC 14.7
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics N-Channel Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 48V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS(th) 1 ⎯ 3 V VDS = VGS, ID = 250µA
⎯ 33 40 VGS = 10V, ID = 8A
Static Drain-Source On-Resistance RDS (ON) mΩ
⎯ 37 55 VGS = 4.5V, ID = 5A
Diode Forward Voltage VSD ⎯ 0.7 1.2 V VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss ⎯ 1130 ⎯
Output Capacitance Coss ⎯ 69 ⎯ pF VDS = 15V, VGS = 0V f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 42 ⎯
Gate Resistance RG ⎯ 1.7 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Qg ⎯ 20.8 ⎯
Total Gate Charge (VGS = 4.5V) Qg ⎯ 9.4 ⎯
nC VDS = 30V, ID = 4.3A
Gate-Source Charge Qgs ⎯ 3.3 ⎯
Gate-Drain Charge Qgd ⎯ 3.0 ⎯
Turn-On Delay Time tD(on) ⎯ 3.6 ⎯
Turn-On Rise Time tr ⎯ 1.8 ⎯ VGS = 10V, VDD = 30V, RG = 6Ω,
nS
Turn-Off Delay Time tD(off) ⎯ 20.1 ⎯ ID = 4.3A
Turn-Off Fall Time tf ⎯ 4.3 ⎯
Body Diode Reverse Recovery Time trr ⎯ 14.2 ⎯ nS IS = 4.3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr ⎯ 7.5 ⎯ nC IS = 4.3A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.

DMC6040SSD 2 of 9 June 2014

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 DMC6040SSD

20.0 20
VGS = 10V
VDS = 5.0V
18.0 18
VGS = 5.0V
16.0 16
VGS = 4.5V
ADVANCE INFORMATION

ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

14.0 VGS = 4.0V 14

12.0 VGS = 3.5V 12

10.0 VGS = 3.0V 10

8.0 8
NEW PRODUCT

6.0 6 TA = 150°C
VGS = 2.8V
T A = 85°C
4.0 4 T A = 125°C
TA = 25°C
2.0 2
TA = -55°C

0.0 0 0
1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics Figure 2 Typical Transfer Characteristics

0.05 0.09

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS = 10V
TA = 150°C
0.08
0.045
0.07 T A = 125°C

0.04
VGS = 4.5V 0.06 TA = 85°C

0.035 0.05

VGS = 10V 0.04 TA = 25°C

0.03
0.03
0.025 TA = -55°C
0.02

0.02 0.01
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN-SOURCE CURRENT (A) ID, DRAIN CURRENT (A)
Figure 3 Typical On-Resistance vs. Figure 4 Typical On-Resistance vs.
Drain Current and Gate Voltage Drain Current and Temperature

2.4 0.1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

2.2 0.09
VGS = 10V
ON-RESISTANCE (NORMALIZED)

2 ID = 8A 0.08
RDS(ON), DRAIN-SOURCE

1.8 0.07
VGS = 4.5V
ID = 5A
1.6 0.06
VGS = 4.5V
1.4 ID = 5A 0.05
VGS = 10V
1.2 0.04 ID = 8A

1 0.03

0.8 0.02

0.6 0.01

0.4 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature Figure 6 On-Resistance Variation with Temperature

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 DMC6040SSD

2.4 20
VGS(th), GATE THRESHOLD VOLTAGE (V)

18
2.1
16
ADVANCE INFORMATION

IS, SOURCE CURRENT (A)

ID = 1mA 14
1.8
12
ID = 250µA
1.5 10

8 T A = 85°C
1.2 TA = 150°C
NEW PRODUCT

6
TA = 25°C
0.9 4 TA = 125°C

2 TA = -55°C

0.6 0
-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5
TJ, JUNCTION TEMPERATURE (°C) VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 7 Gate Threshold Variation vs. Ambient Temperature Figure 8 Diode Forward Voltage vs. Current

10000 10

f = 1MHz

VGS GATE THRESHOLD VOLTAGE (V)

CT, JUNCTION CAPACITANCE (pF)

8
Ciss
1000
6
VDS = 30V
ID = 4.3A

4
100
Coss

2
Crss

10 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20 22
VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 9 Typical Junction Capacitance Figure 10 Gate Charge

100
RDS(ON)
Limited

10
ID, DRAIN CURRENT (A)

DC
1 PW = 10s

PW = 1s
PW = 100ms
0.1 PW = 10ms

PW = 1ms

PW = 100µs
0.01 TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area

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 DMC6040SSD

1
D = 0.9
D = 0.7
D = 0.5

r(t), TRANSIENT THERMAL RESISTANCE D = 0.3

ADVANCE INFORMATION

0.1
D = 0.1

D = 0.05
NEW PRODUCT

D = 0.02

0.01
D = 0.01

D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 102°C/W
D = Single Pulse Duty Cycle, D = t1/ t2

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 12 Transient Thermal Resistance

Electrical Characteristics P-Channel Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 µA VDS = -48V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ 100 nA VGS = ±16V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage VGS(th) -1 ⎯ -3 V VDS = VGS, ID = -250µA
⎯ 86 110 VGS = -10V, ID = -4.5A
Static Drain-Source On-Resistance RDS (ON) mΩ
⎯ 98 130 VGS = -4.5V, ID =-3.5A
Diode Forward Voltage VSD ⎯ -0.7 -1.2 V VGS = 0V, IS = -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance Ciss ⎯ 1030 ⎯
Output Capacitance Coss ⎯ 49.1 ⎯ pF VDS = -30V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss ⎯ 38.7 ⎯
Gate Resistance RG ⎯ 13.6 ⎯ Ω VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V) Qg ⎯ 9.5 ⎯
Total Gate Charge (VGS = -10V) Qg ⎯ 19.4 ⎯
nC VDS = -30V, ID = -5A
Gate-Source Charge Qgs ⎯ 2.3 ⎯
Gate-Drain Charge Qgd ⎯ 3.6 ⎯
Turn-On Delay Time tD(on) ⎯ 3.7 ⎯
Turn-On Rise Time tr ⎯ 6.3 ⎯ VGS = -10V, VDS = -30V, RGEN = 6Ω,
nS
Turn-Off Delay Time tD(off) ⎯ 58.7 ⎯ ID = -5A
Turn-Off Fall Time tf ⎯ 26.1 ⎯
Body Diode Reverse Recovery Time trr ⎯ 14.85 ⎯ nS IS = -5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr ⎯ 8.8 ⎯ nC IS = -5A, dI/dt = 100A/μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting TA = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.

DMC6040SSD 5 of 9 June 2014

Document number: DS36829 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 DMC6040SSD

20.0 20
VGS = -10V
VGS = -4.0V VDS = -5.0V
18.0 18
VGS = -5.0V
VGS = -4.5V
16.0 VGS = -3.5V
16
ADVANCE INFORMATION

ID, DRAIN CURRENT (A)

14
ID, DRAIN CURRENT (A)

14.0

12.0 12
VGS = -3.0V 10
10.0

8.0 8
VGS = -2.8V
NEW PRODUCT

6.0 6

4.0 4 TA = 85° C
TA = 150°C
TA = 25° C
2.0 2 TA = 125°C
TA = -55°C
0.0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS, DRAIN -SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristics Figure 14 Typical Transfer Characteristics

0.18 0.24

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS = -10V
0.22 TA = 150°C

0.16 0.2
0.18
TA = 125°C
0.14 0.16 TA = 85° C
0.14
VGS = -4.5V
0.12 0.12
TA = 25° C
0.1
0.1 0.08
TA = -55°C
VGS = -10V 0.06

0.08 0.04
0.02
0.06 0
0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A) -ID, DRAIN SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs. Figure 16 Typical On-Resistance vs.
Drain Current and Gate Voltage Drain Current and Temperature

2.2 0.2
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)

VGS = -10V
2 ID = -12A 0.18
ON-RESISTANCE (NORMALIZED)

1.8 0.16 VGS = -4.5V

RDS(ON), DRAIN-SOURCE

ID = -3.5A
1.6 0.14
VGS = -4.5V
1.4 ID = -5A 0.12
VGS = -10V
1.2 0.1 ID = -4.5A

1 0.08

0.8 0.06

0.6 0.04

0.4 0.02
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
Fig. 17 On-Resistance Variation with Temperature Figure 18 On-Resistance Variation with Temperature

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 DMC6040SSD

VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.2 20

18
2
16

-IS, SOURCE CURRENT (A)

1.8
ADVANCE INFORMATION

-I D = 1mA 14

12
1.6 -I D = 250µA

10
1.4 TA= 150°C
8

1.2 6 TA= 125°C

NEW PRODUCT

TA= 25°C
4
1 TA= 85°C
2 TA= -55°C

0.8 0
-50 -25 0 25 50 75 100 125 150 0 0.3 0.6 0.9 1.2 1.5
TA, AMBIENT TEMPERATURE (°C) -VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 19 Gate Threshold Variation vs. Ambient Temperature Figure 20 Diode Forward Voltage vs. Current

10000 10
f = 1MHz

-VGS, GATE-SOURCE VOLTAGE (V)

CT, JUNCTION CAPACITANCE (pF)

8
Ciss
1000
6
VDS = -30V
ID = -5A

4
100
Coss

2
Crss

10 0
0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC)
Figure 21 Typical Junction Capacitance Figure 22 Gate-Charge Characteristics

100
RDS(on)
Limited

10
-ID, DRAIN CURRENT (A)

1 DC

PW = 10s

PW = 1s
0.1 PW = 100ms
PW = 10ms
PW = 1ms
T J(max) = 150°C
0.01 PW = 100µs
T A = 25°C
VGS = -10V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1 1 10 100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 23 SOA, Safe Operation Area

DMC6040SSD 7 of 9 June 2014

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 DMC6040SSD

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCE INFORMATION

SO-8
Dim Min Max
A - 1.75

0.254
E1 E A1 0.10 0.20
Gauge Plane
A1 Seating Plane
A2 1.30 1.50
L A3 0.15 0.25
b 0.3 0.5
NEW PRODUCT

Detail ‘A’
D 4.85 4.95
E 5.90 6.10
h 7°~9° E1 3.85 3.95
45°
e 1.27 Typ
A2 A A3
Detail ‘A’ h - 0.35
L 0.62 0.82
e b θ 0° 8°
D All Dimensions in mm

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

Dimensions Value (in mm)

X 0.60
Y 1.55
C1
C1 5.4
C2 1.27
C2

DMC6040SSD 8 of 9 June 2014

Document number: DS36829 Rev. 1 - 2 www.diodes.com © Diodes Incorporated
 DMC6040SSD

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
ADVANCE INFORMATION

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
NEW PRODUCT

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.

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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

Copyright © 2014, Diodes Incorporated

www.diodes.com

DMC6040SSD 9 of 9 June 2014

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Mouser Electronics

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