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    Ch1 2 Tina

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    Fathin Syuhadah
    The hcp structure has a basis of two atoms. One atom is located at the origin (0,0,0). The other atom is located at the position of 2/3 a1 + 1/3 a2 + 1/2 a3.

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    Ch1 2 Tina

    Uploaded by

    Fathin Syuhadah
    34 views16 pages
    The hcp structure has a basis of two atoms. One atom is located at the origin (0,0,0). The other atom is located at the position of 2/3 a1 + 1/3 a2 + 1/2 a3.

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    Ch1-2-Tina

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    The hcp structure has a basis of two atoms. One atom is located at the origin (0,0,0). The other atom is located at the position of 2/3 a1 + 1/3 a2 + 1/2 a3.

    Copyright:

    Public Domain
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views16 pages

    Ch1 2 Tina

    Uploaded by

    Fathin Syuhadah
    The hcp structure has a basis of two atoms. One atom is located at the origin (0,0,0). The other atom is located at the position of 2/3 a1 + 1/3 a2 + 1/2 a3.

    Copyright:

    Public Domain
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 16

    Cl

    Na
    hcp: ABABAB
    fcc: ABCABC
    Diamond Structure
    III-V semiconductors
    STM image
    Scanning Tunneling Microscope (STM)

    10
    NONIDEAL CRYSTAL STRUCTURES
    But no general proof has been given that the ideal crystal is the state of
    minimum energy of identical atoms at absolute zero. At finite temperatures
    this is not likely to be true. Many structures that occur in nature are not
    entirely periodic; see the quasicrystals treated at the end of Chapter 2.
    Random Stacking and Polytypism
    Structures are known in which the stacking sequence of close-packed
    planes is random. This is known as random stacking and may be thought of
    as crystalline in two dimensions and noncrystalline or glasslike in the third.

    The mechanism that induces such long=range crystallographic order is not


    a long=range force as such, but is associated with the presence of spiral steps
    due to dislocations in the growth nucleus (Chapter 21).
    Chapter 21, Spiral crystal growth from dislocation line
    Thin Film Growth for 3D-TIs
    3D TI films of the tetradymite family like Bi2Se3 by van der Waals epitaxy,
    ideally suited for transition metal chalcogenide layered structures

    A. Koma et al, (1984)


    Bi2Te3 Surface Morphology Examined by AFM

    Ts=275 ℃ Ts=300 ℃ Ts=320℃


     The size of
    triangular
    shaped
    domain
    increases with
    growth
    500 nm 500 nm temperature
    200 nm
    Ts=340℃
     The size of
    domains is
    approaching
    to 2μm at
    Ts = 340℃
    500 nm

    Typical hillock terrace morphology,


    Appl. Phys. Lett. 102, 171906 (2013,)
    Calls for micro-ARPES, or nano-ARPES ! 14
    by Prof. Jim Harris et al (Stanford)
    Show for the hcp structure, the basis has two atoms: (1) one is at the origin, and (2)
    the other is at the position of 2/3 a1 + 1/3 a2 + 1/2 a3

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