TISP4070J1BJ THRU TISP4395J1BJ

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP4xxxJ1BJ Overvoltage Protector Series

SMB PACKAGE
Tail Element (Ground Return) of Y Configured Protection Circuit SMB Package (Top View)
(TOP VIEW)
- Twice the Current Capability of Y Upper Arm Elements
- Available in a Wide Range of Voltages
- Enables Symmetrical and Asymmetrical Y Designs
- SMB (DO-214AA) Package MT1 1 2 MT2
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge MD4JAA

VDRM V(BO)
Device
V V
Device Symbol
TISP4070J1 58 70
TISP4080J1 65 80 MT2
TISP4095J1 75 95
TISP4115J1 90 115
TISP4125J1 100 125
TISP4145J1 120 145
TISP4165J1 135 165
TISP4180J1 145 180 MT1 SD4JAA
TISP4200J1 155 200
Rated for International Surge Wave Shapes
TISP4219J1 180 219
TISP4250J1 190 250 IPPSM
Wave Shape Standard
TISP4290J1 220 290 A
TISP4350J1 275 350
2/10 GR-1089-CORE 1000
TISP4395J1 320 395
8/20 IEC 61000-4-5 800
10/160 TIA/EIA-IS-968 (FCC Part 68) 400
10/700 ITU-T K.20/21/45 350
10/560 TIA/EIA-IS-968 (FCC Part 68) 300
10/1000 GR-1089-CORE 200

Description
The TISP4xxxJ1BJ is a symmetrical voltage-triggered bidirectional thyristor device which has been designed as the tail (ground return) element
of a Y circuit configured protector. As such, the TISP4xxxJ1BJ must be rated to conduct the sum of the TIP and RING currents. For example,
the normal GR-1089-CORE testing can impose 200 A, 10/1000 and 1000 A, 2/10 on the ground return element of the Y configuration. Using the
TISP4xxxJ1BJ together with two TISP4xxxH3BJ parts gives a 2x 100 A, 10/1000 Y protector circuit. For ITU-T applications, using the
TISP4xxxJ1BJ with a TISP3xxxT3BJ gives a coordinated Y protector with a 2x 120 A, 5/310 capability. Design tables are given in the
Applications Information section. These SMB package combinations are often more space efficient than single package Y protection multi-chip
integrations.

How To Order
Device Package Carrier Order As
TISP4xxxJ1BJ BJ (SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP4xxxJ1BJR

These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows from the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage though the device. When the diverted current falls below the holding
current, IH, level the devices switches off and restores normal system operation.

SEPTEMBER 2001 REVISED JULY 2002

Specifications are subject to change without notice. 1
 TISP4xxxJ1BJ Overvoltage Protector Series

Absolute Maximum Ratings, Ta = 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

’4070 ±58
’4080 ±65
’4095 ±75
’4115 ±90
’4125 ±100
’4145 ±120
’4165 ±135
Repetitive peak off-state voltage VDRM V
’4180 ±145
’4200 ±155
’4219 ±180
’4250 ±190
’4290 ±220
’4350 ±275
‘4395 ±320
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 800
10/160 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/160 voltage wave shape) 400
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) IPPSM 370 A
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 350
5/320 (TIA/EIA-IS-968 (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350
10/560 (TIA/EIA-IS-968 (Replaces FCC Part 68), 10/560 voltage wave shape) 300
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200
Non-repetitive peak on-state current (see Notes 1 and 2)
50 Hz, 1 cycle ITSM 80 A
60 Hz, 1 cycle 100
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 800 A/µs
Junction temperature TJ -40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 °C.
2. These non-repetitive rated currents are peak values of either polarirty. The surge may be repeated after the device returns to its
initial conditions.

Recommended Operating Conditions

Component Min Typ Max Unit
Series resistor for GR-1089-CORE first-level surge survival 0
Series resistor for ITU-T recommendation K.20/K.45/K.21(Basic coordination with 400 V GDT) 6.5
R1, R2 Series resistor for TIA/EIA-IS-968 (FCC Part 68), 9/720 survival 0 Ω
Series resistor for TIA/EIA-IS-968 (FCC Part 68), 10/560 survival 0
Series resistor for TIA/EIA-IS-968 (FCC Part 68),FCC Part 68 10/160 survival 0

SEPTEMBER 2001 REVISED JULY 2002

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 TISP4xxxJ1BJ Overvoltage Protector Series

Electrical Characteristics, TA = 25 °C, (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

Repetitive peak off- TA = 25 °C ±5
IDRM VD = ±VDRM µA
state current TA = 85 °C ±10
4070 ±70
’4080 ±80
’4095 ±95
’4115 ±115
’4125 ±125
’4145 ±145
’4165 ±165
V(BO) AC breakover voltage dv/dt = ±250 V/ms, RSOURCE = 300 Ω V
’4180 ±180
’4200 ±200
’4219 ±219
’4250 ±250
’4290 ±290
’4350 ±350
‘4395 ±395
4070 ±77
’4080 ±88
’4095 ±104
’4115 ±125
’4125 ±135
dv/dt ≤ ±1000 V/µs, Linear voltage ramp, ’4145 ±156
Ramp breakover Maximum ramp value = ±500 V ’4165 ±177
V(BO) V
voltage di/dt = ±20 A/µs, Linear current ramp, ’4180 ±192
Maximum ramp value = ±10 A ’4200 ±212
’4219 ±231
’4250 ±263
’4290 ±303
’4350 ±364
‘4395 ±409
4070 96
’4080 101
’4095 112
’4115 130
’4125 140
’4145 161
Impulse breakover 2/10 wave shape, IPP = ±1000 A, RS = 2.5 Ω, ’4165 183
V(BO) V
voltage (see Note 3) ’4180 199
’4200 221
’4219 242
’4250 276
’4290 320
’4350 386
‘4395 434
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.

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 TISP4xxxJ1BJ Overvoltage Protector Series

Electrical Characteristics, TA = 25 °C, (Unless Otherwise Noted) (Continued)

Parameter Test Conditions Min Typ Max Unit

I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE = 300 Ω ±600 mA
IH Holding current IT = ±5 A, di/dt = +/-30 mA/ms ±20 mA
Critical rate of rise of
dv/dt Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5 kV/µs
off-state voltage
ID Off-state current VD = ±50 V TA = 85 °C ±10 µA
f = 1 MHz, Vd = 1 V rms, VD = 0, ‘4070 thru ‘4115 195 235
‘4125 thru ‘4219 120 145
‘4250 thru ‘4395 105 125
f = 1 MHz, Vd = 1 V rms, VD = -1 V ‘4070 thru ‘4115 180 215
‘4125 thru ‘4219 110 132
‘4250 thru ‘4395 95 115
f = 1 MHz, Vd = 1 V rms, VD = -2 V ‘4070 thru ‘4115 165 200
Coff Off-state capacitance pF
‘4125 thru ‘4219 100 120
‘4250 thru ‘4395 90 105
f = 1 MHz, Vd = 1 V rms, VD = -50 V ‘4070 thru ‘4115 85 100
‘4125 thru ‘4219 50 60
‘4250 thru ‘4395 42 50
f = 1 MHz, Vd = 1 V rms, VD = -100 V ‘4125 thru ‘4219 40 50
(see Note 4) ‘4250 thru ‘4395 35 40
NOTE 4: To avoid possible voltage clipping, the ‘4125 is tested with VD = -98 V

Thermal Characteristics

Parameter Test Conditions Min Typ Max Unit

EIA/JESD51-3 PCB, IT = ITSM(1000),
RθJA Junction to free air thermal resistance 90 °C/W
TA = 25 °C, (see Note 5)
NOTE 5: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

SEPTEMBER 2001 REVISED JULY 2002

4 Specifications are subject to change without notice.
 TISP4xxxJ1BJ Overvoltage Protector Series

Parameter Measurement Information

+i Quadrant I
ITSP
Switching
Characteristic

ITSM

IT
V(BO)
VT
I(BO)
IH

VDRM VD ID IDRM
-v +v
IDRM ID VD VDRM

IH
I(BO)
VT
V(BO)
IT

ITSM

Quadrant III

Switching ITSP
Characteristic -i PMXXAAB

Figure 1. Voltage-Current Characteristic for Terminals 1-2

All Measurements are Referenced to Terminal 2

SEPTEMBER 2001 REVISED JULY 2002

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 TISP4xxxJ1BJ Overvoltage Protector Series

Typical Characteristics

OFF-STATE CURRENT NORMALISED BREAKOVER VOLTAGE

vs vs
JUNCTION TEMPERATURE JUNCTION TEMPERATURE TC4JAF
TC4JAG
100 1.15
VD = ±50 V

10 1.10

Normalised Breakover Voltage

|ID| - Off-State Current - µA

1 1.05

0·1 1.00

0·01 0.95

0·001 0.90
-25 0 25 50 75 100 125 150 -25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C TJ - Junction Temperature - °C

Figure 2. Figure 3.
ON-STATE CURRENT NORMALISED HOLDING CURRENT
vs vs
ON-STATE VOLTAGE JUNCTION TEMPERATURE TC4JAD
TC4JAA 2.0
400
300 TA = 25 °C
200 tW = 100 µs
150 1.5
100
Normalised Holding Current
IT - On-State Current - A

70
50
40
1.0
30
0.9
20
15 0.8
10 0.7
7
5 0.6
4
3
0.5
2
1.5
1 0.4
0.7 1 1.5 2 3 4 5 7 10 15 -25 0 25 50 75 100 125 150
VT - On-State Voltage - V TJ - Junction Temperature - °C

Figure 4. Figure 5.

SEPTEMBER 2001 REVISED JULY 2002

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 TISP4xxxJ1BJ Overvoltage Protector Series

Typical Characteristics

NORMALISED CAPACITANCE DIFFERENTIAL OFF-STATE CAPACITANCE

vs vs
OFF-STATE VOLTAGE TC4JABB
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
TC4JAE
1 90
0.9
TJ = 25°C

∆C - Differential Off-State Capacitance - pF

0.8
Vd = 1 Vrms
Capacitance Normalised to VD = 0

0.7 80

0.6

70
0.5 ∆C = Coff(-2 V) - Coff(-50 V)

0.4
60

0.3
50

0.2 40
0.5 1 2 3 5 10 20 30 50 100150 50 60 70 80 90100 150 200 250 300 350
VD - Off-state Voltage - V VDRM - Repetitive Peak Off-State Voltage - V

Figure 6. Figure 7.
NORMALISED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
TC4JCC
2.5
Vd = 10 mV rms, 1 MHz
Normalised Capacitance Asymmetry — %

2.0

1.5

1.0 Vd = 1 V rms, 1 MHz

0.5

0.0
0.5 0.7 1 2 3 4 5 7 10 20 30 4050
VD — Off-State Voltage — V
Figure 8.

SEPTEMBER 2001 REVISED JULY 2002

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 TISP4xxxJ1BJ Overvoltage Protector Series

Rating and Thermal Information

NON-REPETITIVE PEAK ON-STATE CURRENT VDRM DERATING FACTOR

vs vs
CURRENT DURATION MINIMUM AMBIENT TEMPERATURE
TI4JAA TI4JADC
40 1.00
VGEN = 600 Vrms, 50/60 Hz
ITSM(t) - Non-Repetitive Peak On-State Current - A

30
RGEN = 1.4*VGEN/ITSM(t) 0.99
EIA/JESD51-2 ENVIRONMENT
20 EIA/JESD51-3 PCB
TA = 25 °C 0.98
15 '4125

Derating Factor
THRU
0.97 '4219
10 '4070
9 THRU
8 '4115
7 0.96
6
5 0.95
4

3 0.94 '4250
THRU
'4395
2 0.93
0·1 1 10 100 1000 -40 -35 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25
t - Current Duration - s TAMIN - Minimum Ambient Temperature - °C
Figure 9. Figure 10.

SEPTEMBER 2001 REVISED JULY 2002

8 Specifications are subject to change without notice.
 TISP4xxxJ1BJ Overvoltage Protector Series

APPLICATIONS INFORMATION

Y Configuration Design
This protection configuration has three modes of protection. The RING to TIP terminal pair protection is given by the series combination of
protectors Th1a and Th1b, see Figure 11. The terminal pair protection voltage will be the sum of the V(BO), breakover voltage, of Th1a and the
V(BO) of Th1b. Protectors Th1a and Th1b are the same device type and the terminal pair protection voltage will be 2V(BO)1. For a terminal pair
protection voltage of ±400 V, Th1a and Th1b would have V(BO)1 = ±400/2 = ±200 V.

Similarly for the other terminal pairs, RING to GROUND protection is given by the series combination of Th1b and Th2 and the terminal pair
protection voltage is V(BO)1 + V(BO)2. TIP to GROUND protection voltage will also be V(BO)1 + V(BO)2.

The maximum terminal pair voltage before clipping might occur is the sum of the protector VDRM, off-state voltages, see Figure 12. For RING to
TIP this will be 2VDRM1. The ±200 V V(BO)1 protectors of the previous example have a VDRM of ±155 V, giving a maximum non-clipping signal
voltage of ±310 V. For RING to GROUND and TIP to GROUND terminal pairs, the maximum non-clipping signal voltage will be VDRM1 + VDRM2.

Under longitudinal surge conditions, when the prospective currents of the line conductors, IRING and ITIP, are equal, Th2, the ground return
protector, carries the sum of the Th1a and Th1b currents, see Figure 13. The current rating of Th2 must be twice that of Th1a and Th1b.

RING RING RING

TIP 2V(BO)1 TIP 2VDRM1 TIP

ITIP IRING
Th1a Th1b Th1a Th1b
UNPROTECTED SIDE

PROTECTED SIDE
V(BO)1 V(BO)1 VDRM1 VDRM1 Th1a Th1b

V(BO)1 + V(BO)2 V(BO)1 + V(BO)2 VDRM1 + VDRM2 VDRM1 + VDRM2

V(BO)2 Th2 VDRM2 Th2 ITIP + IRING Th2

AI4JAA
AI4JAC AI4JAB
Figure 11. Protection Voltage Figure 12. Off-State Voltage Figure 13. Current Flow

GR-1089-CORE Designs
The main impulse waveforms of the standard are 500 A, 2/10 and 100 A, 10/1000. Assuming fuse current limiters, F1a and F1b, a suitable Th1a
and Th1b protector for these conductor currents is the TISP4xxxH3BJ series of devices. The ground return protector, Th2, must be rated for at
least 1000 A,2/10 and 200 A, 10/1000. A suitable Th2 protector for these ground currents is the TISP4xxxJ1BJ series of devices. This
arrangement is shown in Figure 14 and the following table lists all the catalogue device combinations.

RING to GROUND, GR-1089-CORE Y Configuration Parts and Part Voltages

RING to TIP Voltages
TIP to GROUND Voltages
VDRM V(BO) VDRM V(BO) Th1a, Th1b Th2 VDRM V(BO)
V V V V Part # Part # V V
±116 ±140 ±116 ±140 TISP4070H3BJ TISP4070J1BJ ±58 ±70
±130 ±160 ±130 ±160 TISP4080H3BJ TISP4080J1BJ ±65 ±80
±150 ±190 ±150 ±190 TISP4095H3BJ TISP4095J1BJ ±75 ±95
±180 ±230 ±180 ±230 TISP4115H3BJ TISP4115J1BJ ±90 ±115
±200 ±250 ±200 ±250 TISP4125H3BJ TISP4125J1BJ ±100 ±125
±240 ±290 ±240 ±290 TISP4145H3BJ TISP4145J1BJ ±120 ±145
±270 ±330 ±270 ±330 TISP4165H3BJ TISP4165J1BJ ±135 ±165
±290 ±360 ±290 ±360 TISP4180H3BJ TISP4180J1BJ ±145 ±180
±310 ±400 ±310 ±400 TISP4200H3BJ TISP4200J1BJ ±155 ±200
±360 ±438 ±360 ±438 TISP4219H3BJ TISP4219J1BJ ±180 ±219

SEPTEMBER 2001 REVISED JULY 2002

Specifications are subject to change without notice. 9
 TISP4xxxJ1BJ Overvoltage Protector Series

RING to GROUND, GR-1089-CORE Y Configuration Parts and Part Voltages

RING to TIP Voltages
TIP to GROUND Voltages
VDRM V(BO) VDRM V(BO) Th1a, Th1b Th2 VDRM V(BO)
V V V V Part # Part # V V
±380 ±500 ±380 ±500 TISP4250H3BJ TISP4250J1BJ ±190 ±250
±440 ±580 ±440 ±580 TISP4290H3BJ TISP4290J1BJ ±220 ±290
±550 ±700 ±550 ±700 TISP4350H3BJ TISP4350J1BJ ±275 ±350
±640 ±790 ±640 ±790 TISP4395H3BJ TISP4395J1BJ ±320 ±395

F1b R1b
RING RING

TIP TIP R1a

F1a
Th1a + Th1b
Th1a Th1b TISP4xxxT3BJ
TISP4xxxH3BJ TISP4xxxH3BJ

Th2 Th2
TISP4xxxJ1BJ TISP4xxxJ1BJ

AI4JAD AI4JAE

Figure 14. GR-1089-CORE Design Figure 15. Coordinated ITU-T K recommendation Design

ITU-T K.20, K.45 and K.21 Designs

The main impulse voltage waveshape of these recommendations is 10/700. The current waveshape is loading dependent, but it is 5/310 into a
short circuit. To coordinate with a ±400 V primary protector a minimum series resistance of 6.5 Ω is required (“The New ITU-T
Telecommunication Equipment Resistibility Recommendations”, Compliance Engineering Magazine, January-February 2002) The coordination
resistance limits the peak non-truncated current to ±400/6.5 = 62 A. A suitable Th1a and Th1b protector for these conductor currents is the
TISP3xxxT3BJ series of devices, which combine Th1a and Th1b in a single SMB3 package. The ground return protector, Th2, must be rated for
at least 124 A of a 5/310 waveshape. Suitable Th2 protectors for these ground currents are the TISP4xxxH3BJ or TISP4xxxJ1BJ series of
devices. The arrangement is shown in Figure 15 and the following table lists all the catalogue device combinations. Using the SMB3 packaged
TISP3xxxT3BJ saves one third of the PCB placement area compared to solution using three single protector SMB packaged devices.

RING to GROUND, ITU-T Y Configuration Parts and Part Voltages

RING to TIP Voltages
TIP to GROUND Voltages R1a = R1b = 6.5 Ω
VDRM V(BO) VDRM V(BO) Th1a + Th1b Th2 VDRM V(BO)
V V V V Part # Part # V V
±116 ±140 ±116 ±140 TISP3070T3BJ TISP4070J1BJ ±58 ±70
±130 ±160 ±130 ±160 TISP3080T3BJ TISP4080J1BJ ±65 ±80
±150 ±190 ±150 ±190 TISP3095T3BJ TISP4095J1BJ ±75 ±95
±180 ±230 ±180 ±230 TISP3115T3BJ TISP4115J1BJ ±90 ±115
±200 ±250 ±200 ±250 TISP3125T3BJ TISP4125J1BJ ±100 ±125
±240 ±290 ±240 ±290 TISP3145T3BJ TISP4145J1BJ ±120 ±145
±270 ±330 ±270 ±330 TISP3165T3BJ TISP4165J1BJ ±135 ±165
±290 ±360 ±290 ±360 TISP3180T3BJ TISP4180J1BJ ±145 ±180
±310 ±400 ±310 ±400 TISP3200T3BJ TISP4200J1BJ ±155 ±200
±360 ±438 ±360 ±438 TISP3219T3BJ TISP4219J1BJ ±180 ±219
±380 ±500 ±380 ±500 TISP3250T3BJ TISP4250J1BJ ±190 ±250
±440 ±580 ±440 ±580 TISP3290T3BJ TISP4290J1BJ ±220 ±290

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10 Specifications are subject to change without notice.
 TISP4xxxJ1BJ Overvoltage Protector Series

RING to GROUND, ITU-T Y Configuration Parts and Part Voltages

RING to TIP Voltages
TIP to GROUND Voltages R1a = R1b = 6.5 Ω
VDRM V(BO) VDRM V(BO) Th1a + Th1b Th2 VDRM V(BO)
V V V V Part # Part # V V
±550 ±700 ±550 ±700 TISP3350T3BJ TISP4350J1BJ ±275 ±350
±640 ±790 ±640 ±790 TISP3395T3BJ TISP4395J1BJ ±320 ±395
Asymmetrical Designs
These designs are for special needs, where the RING to TIP protection voltage must be different to the RING to GROUND and TIP to GROUND
voltages. ADSL modem interfaces often have a need for asymmetric voltage limiting, see Figure 16. Here, the RING to TIP voltage limitation is
given by the d.c. blocking capacitor, C1, and the RING to GROUND and TIP to GROUND limitation is insulation breakdown. Often the
breakdown limit is set by the spacing of the PW (Printed Wiring) tracks. Figure 17 shows a solution. Using two ±165 V V(BO) parts for Th1a and
Th1b, the RING to TIP voltage is limited to ±330 V. Using a higher voltage ±350 V V(BO) part for Th2 limits the insulation stress to ±515 V. Figure
17 and its following table is for a GR-1089-CORE compliant design.

RING to GROUND, GR-1089-CORE Y Configuration Parts and Part Voltages

RING to TIP Voltages
TIP to GROUND Voltages
Th1a, Th1b Th2
VDRM V(BO) VDRM V(BO)
VDRM V(BO) VDRM V(BO)
V V V V Part # Part #
V V V V
±270 ±330 ±410 ±515 TISP4165H3BJ ±135 ±165 TISP4350J1BJ ±275 ±350

T1
TIP F1b
RING

C1 TIP F1a
Voltage C1
Limit
Th1a Th1b
TISP4165H3BJ TISP4165H3BJ
RING

T1 or PW Th2
Insulation TISP4350J1BJ
Breakdown

AI4JAH

Figure 16. ADSL Modem Interface Voltage Limitations Figure 17. Asymmetrical Design for US ADSL modems

An ITU-T compliant design would probably require the replacement of the fuses by coordination resistors. With a ±410 V off-state voltage, this
may seem unnecessary as modern primary protectors will switch at lower voltages and so automatically coordinate. On a perfect longitudinal
waveform this is true. However, the ITU-T also applies a transverse (metallic) test, as well, to simulate non-simultaneous switching of the primary
protection. In this case, one conductor is grounded, which places the RING to TIP protection is in parallel with the unswitched primary protector.
The ±270 V off-state voltage is likely to be lower than the primary switching voltage and there isn’t coordination. Under GR-1089-CORE
conditions with non-simultaneous switching, the 100 A 10/1000 current, which should have gone through the unswitched primary protector, is
diverted through the top arms of the Y into the switched primary, causing a 200 A current flow in that primary protector.

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Specifications are subject to change without notice. 11
 TISP4xxxJ1BJ Overvoltage Protector Series

MECHANICAL DATA

Recommended Printed Wiring Land Pattern Dimensions.

SMB Land Pattern

2,54 [.100]

2,40 [.095]

2,16 [.085]

ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES

MDXXBIB
Device Symbolization Code
Devices will be coded as below. As the device parameters are symmetrical, terminal 1 is not identified.

Device Symbolization Code

TISP4070J1 4070J1
TISP4080J1 4080J1
TISP4095J1 4095J1
TISP4115J1 4115J1
TISP4125J1 4125J1
TISP4145J1 4145J1
TISP4165J1 4165J1
TISP4180J1 4180J1
TISP4200J1 4200J1
TISP4219J1 4219J1
TISP4250J1 4250J1
TISP4290J1 4290J1
TISP4350J1 4350J1
TISP4395J1 4395J1

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12 Specifications are subject to change without notice.
 TISP4xxxJ1BJ Overvoltage Protector Series

MECHANICAL DATA

SMB (DO-214AA) Plastic Surface Mount Diode Package

This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity
conditions. Leads require no additional cleaning or processing when used in soldered assembly.

SMB
4,57 [.180]
4,06 [.160]

3,94 [.155]
2
3,30 [.130]

Index
Mark
(if needed)

2,40 [.095]
2,00 [.079]

0,20 [.008]
1,52 [.060] 2,10 [.083] 0,10 [.004] 2,32 [.091]
0,76 [.030] 1,90 [.075] 1,96 [.077]
5,59 [.220]
5,21 [.205]

ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES

MDXXBHAB

SEPTEMBER 2001 REVISED JULY 2002

Specifications are subject to change without notice. 13
 TISP4xxxJ1BJ Overvoltage Protector Series

MECHANICAL DATA

Tape Dimensions

SMB Package Single-Sprocket Tape

3,90 - 4,10 1,55 - 1,65

(.154 - .161) (.061 - .065)

1,95 - 2,05 0,40

1,65 - 1,85 MAX.
(.077 - .081) (.016)
(.065 - .073)

5,45 - 5,55
(.215 - .219) 11,70 - 12,30
(.461 - .484) 8,20
MAX.
(.323)

7,90 - 8,10 1,5 Cover

φ MIN. 0 MIN. Tape
(.311 - .319) (.059)

Carrier Tape 4,5

Direction of Feed MAX.
Embossment` (.177)

20° Maximium component

rotation

Typical component
Index cavity centre line
Mark
(if needed) Typical component
centre line

ALL LINEAR DIMENSIONS IN MILLIMETERS AND PARENTHETICALLY IN INCHES

NOTES: A. The clearance between the component and the cavity must be within 0,05 mm (.002 in) MIN. to 0,65 mm (.026 in) MDXXBJA
MAX. so that the component cannot rotate more than 20° within the determined cavity.

B. Taped devices are supplied on a reel of the following dimensions:-

Reel diameter: 330 mm ±3,0 mm (12.99 in ±.118 in)

Reel hub diameter 75 mm (2.95 in) MIN.
Reel axial hole: 13,0 mm ±0,5 mm (.512 in ±.020 in)

C. 3000 devices are on a reel.

SEPTEMBER 2001 REVISED JULY 2002

14 Specifications are subject to change without notice.