Fa'18 130&230A Syllabus

University of California, Berkeley
College of Engineering
Department of Electrical Engineering and Computer Sciences
Fall 2018 EE 130/230A Integrated Circuit (IC) Devices

https://bcourses.berkeley.edu/courses/1474026
Professor: Jaeseok (“Jae”) Jeon, PhD ([email protected])
Lectures: Tue and Thu, 08:00–09:29, Cory 521 (Hogan Room)
Grad Student Instructors

Yen-Kai Lin ([email protected]) and Tsegereda Esatu ([email protected])
Discussion Sections
201: Y.-K. Lin, Wed, 11:00–11:59, Cory 299
202: T. Esatu, Wed, 12:00–12:59, Cory 299
Office Hours
T. Esatu: Mon, 12:00–12:59, Cory 367
J. Jeon: Tue, 15:00–16:29, Cory 258, except Tue (09/11), 14:00–15:29, Cory 557
Y.-K. Lin: Thu, 10:00–10:59, Soda 341A
Prerequisite Course: EE 40 Intro to Microelectronic Circuits
Prerequisite by Topic
Bohr model (electron energy levels) of Hydrogen; Static electric fields; Ordinary differential equations;
Terminal characteristics of diodes, bipolar junction transistors (BJTs), and metal-oxide-semiconductor
(MOS) field-effect transistors (FETs).
Textbooks
(Required) C. Hu, Modern Semiconductor Devices for ICs (ISBN: 9780136085256).
(Optional) R. Pierret, Semiconductor Device Fundamentals (ISBN: 9780201543933).
Course Catalog Description: Overview of electronic properties of semiconductors. Metal-semiconductor

contacts, PN junctions, BJTs, and MOSFETs. Properties that are significant to device operation for ICs.
Silicon device fabrication technology.
Objective: To learn the fundamentals of the basic semiconductor devices used in ICs: PN junction diode,
BJT, MOS capacitor, and MOSFET. A student who successfully fulfills course requirements will
understand the working principles of the devices and the dependence of their electrical characteristics on
their physical parameters and operating conditions, and will have an ability to design and analyze new
semiconductor devices for ICs.
Relation to Other Courses: EE 130/230A is a prerequisite for EE 230B Solid-State Devices.

It is also helpful for IC design, analysis, and fabrication courses such as
EE 140/240A Analog ICs, EE 141 Intro to Digital ICs, EE 142/242A ICs for Communication, and
EE 143 Microfabrication Technology.
1
Homework: Homework will be assigned and posted online every week, and will be due the following
week at the beginning of class. Late homework will not be accepted. Students are encouraged to discuss
homework problems with classmates, the GSIs, and/or the instructor. However, the work which you
submit for grading must be your own. Feel free to email the GSIs and/or the instructor or ask during the
office hours for clarifications on homework problems.
Design Project: Students will gain experience in MOSFET design through a term project. Teams of two
students will be permitted, and each team must work independently, i.e., sharing of work across teams is
not allowed. Details will be provided in November.
Exams: All exams will be closed book. Two letter-size double-sided sheets of notes for each midterm
exam (four sheets for the final exam) and one scientific calculator are allowed. Make-up exams will be
allowed only under special circumstances. Please see the following guidelines: Academic Calendar and
Student Accommodations—Campus Policies and Guidelines: https://teaching.berkeley.edu/academic-
calendar-and-student-accommodations-campus-policies-and-guidelines; Final Exam Responsibilities:
https://registrar.berkeley.edu/sites/default/files/pdfs/final_exam_responsibilities.pdf?PageID=finals.html.
Grading: The course grade will be based on the following numerical score: 10 % for homework
assignments, 30 % for two midterm exams, 20 % for one design project, and 40 % for the final exam.
Letter grades will be assigned based approximately on the following scale:
97–100: A+ 87–97: A 84–87: A–
81–84: B+ 71–81: B 68–71: B–
65–68: C+ 55–65: C 52–55: C– 40–52: D.
Please see Grading Guidelines for Undergraduate Courses:
https://eecs.berkeley.edu/resources/faculty-staff/academic-personnel/grading-guidelines-undergrad;
College of Engineering Grading Policies and Procedures:
https://engineering.berkeley.edu/academics/undergraduate-guide/policies-procedures/grades.
Important Dates
First day of class: Thu, 08/23/18; Thanksgiving: Thu, 11/22/18; Last day of class: Thu, 11/29/18.
FINAL EXAM (GROUP #4): MON, 12/10/18, 19:00–21:59.
Course Topics and Associated Textbook Chapters

1. Ch 1 and 2: Semiconductor Fundamentals
Semiconductors, carrier properties, distributions, and concentrations, carrier action.
(Skip Ch 3: Device Fabrication Technology).
2. Ch 4: Metal-Semiconductor Contacts and PN Junction Diode
Electrostatics, I-V characteristics, junction capacitance, transient response, applications.
3. Ch 5, 6, and 7: MOS Capacitor and MOSFET
Structure and operation, short-channel effects, complementary MOS (CMOS) technology, MOSFET
scaling, MOS memory devices.
4. Ch 8: BJT
Static characteristics, dynamic performance.
Policy on Academic Dishonesty: https://eecs.berkeley.edu/resources/students/academic-dishonesty.

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University of California, Berkeley

Fall 2018 EE 130/230A Integrated Circuit (IC) Devices

Professor: Jaeseok (“Jae”) Jeon, PhD ([email protected])

Lectures: Tue and Thu, 08:00–09:29, Cory 521 (Hogan Room)

Grad Student Instructors

Prerequisite Course: EE 40 Intro to Microelectronic Circuits

Course Catalog Description: Overview of electronic properties of semiconductors. Metal-semiconductor

Relation to Other Courses: EE 130/230A is a prerequisite for EE 230B Solid-State Devices.

Course Topics and Associated Textbook Chapters

Policy on Academic Dishonesty: https://eecs.berkeley.edu/resources/students/academic-dishonesty.

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