SEMICONDUCTOR KRC410~KRC414

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.

E
FEATURES M B M

ᴌWith Built-in Bias Resistors. DIM MILLIMETERS

A _ 0.20
2.00 +
D
ᴌSimplify Circuit Design. 2 B _ 0.15
1.25 +

A
_ 0.10
0.90 +

J
C
ᴌReduce a Quantity of Parts and Manufacturing Process. 1 3

G
D 0.3+0.10/-0.05
ᴌHigh Packing Density. E _ 0.20
2.10 +
G 0.65
H 0.15+0.1/-0.06

EQUIVALENT CIRCUIT J 1.30

K 0.00-0.10
L 0.70

C
H _ 0.10

L
M 0.42 +
C
N 0.10 MIN
N N
K
R1
B
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)

USM
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC 100 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150 ᴱ
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55ᴕ150 ᴱ
Collector Current IC 100 mA

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC410 - 4.7 -
KRC411 - 10 -
Input Resistor KRC412 R1 - 100 - kή
KRC413 - 22 -
KRC414 - 47 -

Marking
Type Name
MARK SPEC
TYPE KRC410 KRC411 KRC412 KRC413 KRC414

MARK NK NM NN NO NP

2001. 11. 29 Revision No : 2 1/4

 KRC410~KRC414

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC410 - 0.025 -
KRC411 - 0.03 -
Rise Time KRC412 tr - 0.3 -
KRC413 - 0.06 -
KRC414 - 0.11 -
KRC410 - 3.0 -
KRC411 VO=5V - 2.0 -
Switching
Storage Time KRC412 tstg VIN=5V - 6.0 - S
Ọ
Time
KRC413 RL=1kή - 4.0 -
KRC414 - 5.0 -
KRC410 - 0.2 -
KRC411 - 0.12 -
Fall Time KRC412 tf - 2.0 -
KRC413 - 0.9 -
KRC414 - 1.4 -

2001. 11. 29 Revision No : 2 2/4

 KRC410~KRC414

h FE - I C V CE(sat) - I C
KRC410 KRC410
2k 2

COLLECTOR-EMITTER SATURATIN
I C /I B =20
1k 1
DC CURRENT GAIN h FE

VOLTAGE VCE(sat) (V)

500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C

10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

h FE - I C V CE(sat) - I C
KRC411 KRC411
2k 2
COLLECTOR-EMITTER SATURATIN

I C /I B =20
1k 1
DC CURRENT GAIN h FE

VOLTAGE VCE(sat) (V)

500 0.5
300 Ta=100 C 0.3

Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C

10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

h FE - I C VCE(sat) - I C
KRC412 KRC412
2k 2
COLLECTOR-EMITTER SATURATIN

I C /I B =20
1k 1
DC CURRENT GAIN h FE

VOLTAGE VCE(sat) (V)

500 0.5
300 Ta=100 C 0.3

Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C

10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

2001. 11. 29 Revision No : 2 3/4

 KRC410~KRC414

h FE - I C VCE(sat) - I C
KRC413 KRC413

COLLECTOR-EMITTER SATURATIN
2k 2
I C /I B =20
1k 1

VOLTAGE VCE(sat) (V)

DC CURRENT GAIN h FE

500 0.5
300 Ta=100 C 0.3

Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C

10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

h FE - I C VCE(sat) - I C
KRC414 KRC414
2k 2
COLLECTOR-EMITTER SATURATIN

I C /I B =20
1k 1
DC CURRENT GAIN h FE

VOLTAGE VCE(sat) (V)

500 0.5
300 Ta=100 C 0.3

Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
V CE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)

2001. 11. 29 Revision No : 2 4/4

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