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    Sot89 NPN Silicon Planar Medium Power Transistors BCX54 BCX55 BCX56

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    Maria Tzagaraki
    This document provides specifications for three NPN silicon planar medium power transistors: the BCX54, BCX55, and BCX56. It lists the part markings, maximum ratings, electrical characteristics, and complementary transistor types for each. Key parameters include a continuous collector current rating of 1A, power dissipation of 1W, and operating temperature range of -65 to +150°C. Electrical characteristics include breakdown voltages, current and cutoff levels, saturation voltage, gain, and transition frequency.

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    Sot89 NPN Silicon Planar Medium Power Transistors BCX54 BCX55 BCX56

    Uploaded by

    Maria Tzagaraki
    48 views1 page
    This document provides specifications for three NPN silicon planar medium power transistors: the BCX54, BCX55, and BCX56. It lists the part markings, maximum ratings, electrical characteristics, and complementary transistor types for each. Key parameters include a continuous collector current rating of 1A, power dissipation of 1W, and operating temperature range of -65 to +150°C. Electrical characteristics include breakdown voltages, current and cutoff levels, saturation voltage, gain, and transition frequency.

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    bcx55be

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    This document provides specifications for three NPN silicon planar medium power transistors: the BCX54, BCX55, and BCX56. It lists the part markings, maximum ratings, electrical characteristics, and complementary transistor types for each. Key parameters include a continuous collector current rating of 1A, power dissipation of 1W, and operating temperature range of -65 to +150°C. Electrical characteristics include breakdown voltages, current and cutoff levels, saturation voltage, gain, and transition frequency.

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    48 views1 page

    Sot89 NPN Silicon Planar Medium Power Transistors BCX54 BCX55 BCX56

    Uploaded by

    Maria Tzagaraki
    This document provides specifications for three NPN silicon planar medium power transistors: the BCX54, BCX55, and BCX56. It lists the part markings, maximum ratings, electrical characteristics, and complementary transistor types for each. Key parameters include a continuous collector current rating of 1A, power dissipation of 1W, and operating temperature range of -65 to +150°C. Electrical characteristics include breakdown voltages, current and cutoff levels, saturation voltage, gain, and transition frequency.

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    © All Rights Reserved
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    of 1

    SOT89 NPN SILICON PLANAR BCX54

    MEDIUM POWER TRANSISTORS BCX55


    ISSUE 3 – FEBRUARY 1996 ✪
    BCX56
    PARTMARKING DETAILS:- C
    BCX54 – BA BCX54-10 – BC BCX54-16 – BD
    BCX55 – BE BCX55-10 – BG BCX55-16 – BM
    BCX56 – BH BCX56-10 – BK BCX56-16 – BL
    E
    COMPLEMENTARY TYPES:- C
    BCX54 – BCX51 BCX55 – BCX52 BCX56 – BCX53 B
    ABSOLUTE MAXIMUM RATINGS.
    PARAMETER SYMBOL BCX54 BCX55 BCX56 UNIT
    Collector-Base Voltage VCBO 45 60 100 V
    Collector-Emitter Voltage VCEO 45 60 80 V
    Emitter-Base Voltage VEBO 5 V
    Peak Pulse Current ICM 2 A
    Continuous Collector Current IC 1 A
    Power Dissipation at Tamb=25°C Ptot 1 W
    Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
    PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

    Collector-Base Breakdown BCX54 V(BR)CBO 45


    Voltage BCX55 60 V IC =100µA
    BCX56 100
    Collector-Emitter BCX54 V(BR)CEO 45
    Breakdown Voltage BCX55 60 V IC =10mA*
    BCX56 80
    Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE =10µA
    Collector Cut-Off Current ICBO 0.1 µA VCB =30V
    20 µA VCB =30V, Tamb =150°C
    Emitter Cut-Off Current IEBO 20 nA VEB =4V
    Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC =500mA, IB =50mA*
    Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC =500mA, VCE =2V*
    Static Forward Current Transfer hFE 25 IC =5mA, VCE =2V*
    Ratio 40 250 IC =150mA, VCE =2V*
    25 IC =500mA, VCE =2V*
    –10 63 160 IC =150mA, VCE =2V*
    –16 100 250 IC =150mA, VCE =2V*
    Transition Frequency fT 150 MHz IC =50mA, VCE =10V,
    f=100MHz
    Output Capacitance Cobo 15 pF VCB =10V, f=1MHz
    *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

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