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    Ebeam Presentation PDF

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    Madhavkumar
    Electron beam lithography and X-ray lithography are high resolution nanolithography techniques. Electron beam lithography uses a focused electron beam to directly write complex patterns on wafers coated with resist. It can achieve resolutions of 20nm but is an expensive and slow serial process. X-ray lithography uses a mask and short wavelength X-rays between 0.2-2nm to expose a resist. It allows for smaller feature sizes than optical lithography but requires expensive masks and cannot be focused through lenses. Both techniques form patterns by exposing resist with electrons or X-rays, which are then developed to selectively remove the exposed regions.

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    Ebeam Presentation PDF

    Uploaded by

    Madhavkumar
    46 views16 pages
    Electron beam lithography and X-ray lithography are high resolution nanolithography techniques. Electron beam lithography uses a focused electron beam to directly write complex patterns on wafers coated with resist. It can achieve resolutions of 20nm but is an expensive and slow serial process. X-ray lithography uses a mask and short wavelength X-rays between 0.2-2nm to expose a resist. It allows for smaller feature sizes than optical lithography but requires expensive masks and cannot be focused through lenses. Both techniques form patterns by exposing resist with electrons or X-rays, which are then developed to selectively remove the exposed regions.

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    Electron beam lithography and X-ray lithography are high resolution nanolithography techniques. Electron beam lithography uses a focused electron beam to directly write complex patterns on wafers coated with resist. It can achieve resolutions of 20nm but is an expensive and slow serial process. X-ray lithography uses a mask and short wavelength X-rays between 0.2-2nm to expose a resist. It allows for smaller feature sizes than optical lithography but requires expensive masks and cannot be focused through lenses. Both techniques form patterns by exposing resist with electrons or X-rays, which are then developed to selectively remove the exposed regions.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    46 views16 pages

    Ebeam Presentation PDF

    Uploaded by

    Madhavkumar
    Electron beam lithography and X-ray lithography are high resolution nanolithography techniques. Electron beam lithography uses a focused electron beam to directly write complex patterns on wafers coated with resist. It can achieve resolutions of 20nm but is an expensive and slow serial process. X-ray lithography uses a mask and short wavelength X-rays between 0.2-2nm to expose a resist. It allows for smaller feature sizes than optical lithography but requires expensive masks and cannot be focused through lenses. Both techniques form patterns by exposing resist with electrons or X-rays, which are then developed to selectively remove the exposed regions.

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    of 16

    Electron Beam and X-Ray Lithography

    Ankit Chaudhari
    Musa Ibrahim
    Electron Beam Lithography:
    Application
     Electron beam Lithography (EBL) is used
    primarily for two purposes
    very high resolution lithography.
    fabrication of masks ( by etching process)

     It uses Serial Lithographic system


    Electron Beam Sources
     Thermionic Emitters
    Electrons released due to thermal energy
     Photo Emitters
    due to incident radiations ( photons)
     Field Emitters
    due to applied current and quantum mechanical
    property of electrons.
    Procedures of EBL
     Sample is coated with a thin layer of resist
    Polymethylmethacrylate (PMMA)
     PMMA breaks down into monomers upon exposure to
    electrons.
     The exposed regions can be rinsed away (developed) using a
    chemical
    Methyl-isobutyl-ketone (MIBK)
    Advantages of EBL
     Print complex patterns directly on wafers

     Eliminates the diffraction problem

     High resolution up to 20 nm(photolithography ~50nm)

     Flexible technique
    Disadvantages of EBL
     Slower than optical lithography.

     Expensive and complicated

     Forward scattering

     Backscattering

     Secondary electrons
    Machine structure
    EBL Components
     Deflection coils and lenses: to focus the electron
     Beam blanking: turning the beam on and off
     Stigmators: is a special type of lens used to compensate for
    imperfections in the construction and alignment of the EBL
    Colum.
     Vacuum: to isolate the electron beam from interferences
    X-Ray Lithography: Application

     X-ray lithography is primarily used in nanolithography


     15 nm optical resolution
     Utilizes short wavelength of 1 nm
     Simple: Requires no lenses
     Allows for small feature size
    Procedures of X-Ray Lithography
     PMMA is applied to the surface of silicon wafer
     PMMA hardens when contacted with x-rays
     X-ray mask is applied on top of silicon wafer before
    exposure
    Absorber
    Membrane
     Synchrotron radiation (0.2 – 2 nm)
     Gap between substrate and mask
    Advantages of X-Ray Lithography
     Short wavelength from X-rays
    0.4-4 nm
     No diffraction effect
     Simple to use
    No lens
     Faster than EBL
     Uniform refraction pattern
     High resolution for small feature size
    Disadvantages of X-ray Lithography
     Thin lens
    Distortion in absorber

     Cannot be focused through lens

     Masks are expensive to produce


    X-Ray Lithography Machine Structure
    Components
     Absorber – reduce scattering of X-rays

     Membrane – allows X-rays to travel through

     Vacuum- to isolate the X-ray from interferences


    QUESTIONS?
    Works Cited
     B. Braun, “Producing Integrated Circuits With X-ray Lithography” February 4,
    2004, [Online]. Available:
    http://tc.engr.wisc.edu/uer/uer97/author7/index.html. [Accessed:
    9/18/2011]
     B. Hans-Georg, “Electron Beam Lithography” September 22, 2008, UER
    Main,[Online]. Available:
    http://www.ipfdd.de/uploads/media/Lithohbmain_02.pdf .[Accessed:
    9/18/2011]

     C. Friedrich, “X-Ray Lithography” March 1, 2000, [Online]. Available:
    http://www.me.mtu.edu/~microweb/chap1/ch1-4-2.htm.[Accessed:
    9/19/2011]

    Y. Jiang, “Electron Beam and Conventional Lithography” UER Main,[Online].
    Available:
    http://www.dssc.ece.cmu.edu/news/seminars/lunch05/headsmedia/041205
    .pdf. [Accessed:9/19/2011]

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