TC75S67TU

TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

TC75S67TU
Single Operational Amplifier (Ultra Low Noise Operational Amplifier)

Features TC75S67TU
 Ultra Low Noise. VNI = 6 nV/√Hz (typ.) @ VDD = 2.5 V
 Low-current supply. 430 μA (typ.) @ VDD = 2.5 V
 Ultra-compact package.

UFV
Absolute Maximum Ratings (Note) (Ta = 25°C) Weight: 7 mg (typ.)

Characteristics Symbol Rating Unit

Supply voltage VDD, VSS 6 V

Differential input voltage DVIN 6 V
Input voltage VIN VDD to VSS V
Output current IOUT 4 mA
Power dissipation (Note 1) PD 450 mW
Operating temperature Topr -40 to 85 °C
Storage temperature Tstg -55 to 125 °C

Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even
destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Note 1: Mounted on a glass epoxy circuit board of 30 mm  30 mm. Pad dimension of 35mm2

Operating Ratings (Note) (Ta = 25°C)

Characteristics Symbol Rating Unit

Supply voltage VDD, VSS 2.2 to 5.5 V

Note: Do not use this product in a voltage follower circuit or outside the range of the common mode input voltage.
(For the common mode input voltage, see DC Characteristics on Page 2). Failure to follow this instruction may
cause a circuit oscillation.
A higher load capacitance will increase the risk of voltage oscillation, even if this product is used within the range of
the common mode input voltage. Allow sufficient capacitance value margin when designing your circuit and using
this product to prevent a circuit oscillation.
Start of commercial production
2017-08
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Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU
Marking (top view) Pin Connection (top view)

VDD OUT
5 4 5 4

SA1

1 2 3 1 2 3
IN () VSS IN (-)

Electrical Characteristics

DC Characteristics (VDD = 2.5 V, VSS = GND, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
Input offset voltage VIO 1 RS = 1 k, RF = 100 k - 0.5 3 mV
Input offset voltage drift VIOdrift 1 RS = 1 k, RF = 100 k - 2 - μV/°C
Input offset current IIO - - - 1 - pA
Input bias current II - - - 1 - pA
Common mode input voltage CMVIN 2 RS = 1 k, RF = 100 k 0 - 1.4 V
Voltage gain (open loop) GV - - 80 100 - dB
VOH 3 RL  100 k 2.4 - -
Maximum output voltage V
VOL 4 RL  100 k - - 0.1
Common mode input signal
rejection ratio
CMRR 2 VIN = 0 to 1.4 V 70 100 - dB

Supply voltage rejection ratio SVRR 1 VDD = 2.2 to 5.5V 70 100 - dB

Supply current IDD 5 - - 430 700 μA
Source current Isource 6 - 2000 2500 - μA
Sink current Isink 7 - 2000 3500 - μA

AC Characteristics (VDD = 2.5 V, VSS = GND, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit
f = 10 Hz, GV = 40 dB,
- 16 40
RS = 100 , Rf = 10 k
Equivalent input Noise Voltage VNI - nV/√Hz
f = 1 kHz, GV = 40 dB,
- 6 10
RS = 100 , Rf = 10 k
Unity Gain Cross Frequency fT 9 - 3.0 3.5 - MHz
Phase delay φD 8 f = 10 kHz - -10.5 - degrees
Phase margin φm 9 GV = 6 dB (AV = 2) - 55 - degrees

AC Characteristics (VDD = 1.25 V, VSS = -1.25 V, Ta = 25°C)

Test
Characteristics Symbol Test Condition Min Typ. Max Unit
Circuit

Slew Rate SR 10 GV = 12 dB, VIN = 0.25 Vp-p - 1.0 - V/μs

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Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU
Test Circuit
1. SVRR, VIO

VDD  SVRR
 For each of the two VDD values, measure the VOUT value, as
indicated below, and calculate the value of SVRR using the
RF
equation shown.
When VDD = 2.2 V, VDD = VDD1 and VOUT = VOUT1
RS When VDD = 5.5 V, VDD = VDD2 and VOUT = VOUT2
VOUT
VDD 1−VDD 2 RF +RS
5 SVRR = 20 log (| |× RS
)
RS V 1 V 2
(VOUT1−( DD
2
))-(VOUT 2−( DD ))
2
RF

 VIO
VDD/2 Measure the value of VOUT and calculate the value of VIO using
the following equation.

VDD
 VIO = (VOUT- ) ×(R R+R
S
)
2
2. CMRR, CMVIN F S

VDD  CMRR
Measure the VOUT value, as indicated below, and calculate the
RF value of the CMRR using the equation shown.
When VIN = 0 V, VIN = VIN1 and VOUT = VOUT1
RS When VIN = 1.4 V, VIN = VIN2 and VOUT = VOUT2

VOUT CMRR=20 log (|V

VIN 1-VIN2 RF +RS
|× )
OUT 1-VOUT 2 RS
RS
VIN
RF

 CMVIN
VDD/2 Input range within which the CMRR specification guarantees
VOUT value (as varied by the VIN value).

3. VOH

VDD  VOH

VDD
VIN1   0.1 V
2

VDD
VOH VIN2 
2
RL

VIN1 VIN2

4. VOL

VDD
 VOL

V DD
VIN1 
2
RL

VDD
VOL VIN2   0.1 V
2

VIN1 VIN2

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Rev1.4
 TC75S67TU
5. IDD

VDD

M IDD
100kΩ
1kΩ
VOUT

100kΩ
1kΩ
VDD/2

VDD/2

6. Isource VDD 7. Isink

V DD VDD
2
 0.1 V VDD M
2
2 V DD
 0.1V
2

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Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU

8. φD

VDD

Voltage gain GV (dB)

RF

RS VOUT

10 kHz
0 Frequency f (Hz)

Phase (degrees)
VIN

Phase delay ΦD
VSS

Network Analyzer -180

9. fT, φm

VDD
Voltage gain GV (dB)

RF

RS
6dB
VOUT
Frequency f (Hz)
0

fT

VSS
180
Network Analyzer
Phase (degrees)

0 Frequency f (Hz)

Phase margin φm

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Rev1.4
 TC75S67TU
10. SR

VDD=1.65V

RF=39kΩ

RS=13kΩ

VOUT

VIN

VSS= -1.65V

 SR 0.1.25V

R
+ 　F = 12dB
GV = 1　 Input voltage VIN
R S
- 0.125V
Δt
SR =
ΔV 90%
Output voltage VOUT ΔV
10%
Δt

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Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU

The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

© 2017 - 2019 7 2019-08-19

Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU

The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

© 2017 - 2019 8 2019-08-19

Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU

The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted.

© 2017 - 2019 9 2019-08-19

Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU
Package Dimensions

UFV Unit: mm

Weight: 7 mg (typ.)

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Toshiba Electronic Devices & Storage Corporation
Rev1.4
 TC75S67TU
RESTRICTIONS ON PRODUCT USE
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responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product,
or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant
TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product
and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the
application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design
or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications;
(b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs,
algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs
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© 2017 - 2019 11 2019-08-19
Toshiba Electronic Devices & Storage Corporation
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