SBL1630CT - SBL1660CT: Features

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NOT RECOMMENDED

FOR NEW DESIGN SBL1630CT - SBL1660CT


16A SCHOTTKY BARRIER RECTIFIER

Features
• Schottky Barrier Chip L TO-220AB
• Guard Ring Die Construction for Transient Protection B M Dim Min Max
• Low Power Loss, High Efficiency A 14.48 15.75
C
• High Surge Capability D B 10.00 10.40
• High Current Capability and Low Forward Voltage Drop K C 2.54 3.43
• For Use in Low Voltage, High Frequency Inverters, Free A
D 5.90 6.40
Wheeling, and Polarity Protection Applications E 2.80 3.93
• Lead Free Finish, RoHS Compliant (Note 3) 1 2 3 G 12.70 14.27
E H 2.40 2.70
Mechanical Data
G J 0.69 0.93
• Case: TO-220AB J N K 3.54 3.78
• Case Material: Molded Plastic. UL Flammability L 4.07 4.82
Classification Rating 94V-0 M 1.15 1.39
• Moisture Sensitivity: Level 1 per J-STD-020C H H P N 0.30 0.50
• Terminals: Finish –Tin. Solderable per MIL-STD-202, Pin 1 + + P 2.04 2.79
Method 208 Pin 2 -
Pin 3 + Case All Dimensions in mm
• Polarity: As Marked on Body
• Marking: Type Number
• Weight: 2.24 grams (approximate)

Maximum Ratings and Electrical Characteristics @TA = 25°C unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBL SBL SBL SBL SBL SBL
Characteristic Symbol Unit
1630CT 1635CT 1640CT 1645CT 1650CT 1660CT
Peak Repetitive Reverse Voltage VRRM
Working Peak Reverse Voltage VRWM 30 35 40 45 50 60 V
DC Blocking Voltage VR
RMS Reverse Voltage VR(RMS) 21 24.5 28 31.5 35 42 V
Average Rectified Output Current
IO 16 A
(Note 1) @ TC = 95°C
Non-Repetitive Peak Forward Surge Current 8.3ms
IFSM 250 A
Single Half Sine-Wave Superimposed on Rated Load
Forward Voltage Drop @ IF = 8.0A, TC = 25°C VFM 0.55 0.70 V
Peak Reverse Current @TC = 25°C 0.5
IRM mA
at Rated DC Blocking Voltage @ TC = 100°C 50
Typical Junction Capacitance (Note 2) Cj 700 pF
Typical Thermal Resistance Junction to Case (Note 1) RθJC 3.5 °C/W
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.

DS23014 Rev. 8 - 3 1 of 3 SBL1630CT - SBL1660CT


© Diodes Incorporated
www.diodes.com
NOT RECOMMENDED
FOR NEW DESIGN

20 40

IF, INSTANTANEOUS FORWARD CURRENT (A)


I(AV), AVERAGE FORWARD CURRENT (A)

SBL1630 - SBL1645
16
10

12
SBL1645 - SBL1660

8
1.0

0 0.1
0 50 100 150 0.1 0.3 0.5 0.7 0.9 1.1
TC, CASE TEMPERATURE (°C) VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 1 Forward Current Derating Curve Fig. 2 Typical Forward Voltage

300 4,000
Tj = 25°C
IFSM, PEAK FORWARD SURGE CURRENT (A)

8.3ms single half-sine-wave

250 Cj, CAPACITANCE (pF)

200
1,000

150

100

50

0 100
1 10 100 0.1 1.0 10 100
NUMBER OF CYCLES AT 60Hz VR, REVERSE VOLTAGE (V)
Fig. 3 Max Non-Repetitive Surge Current Fig. 4 Typical Junction Capacitance

100
IR , INSTANTANEOUS REVERSE CURRENT (A)

Tj = 100°C

10

T j = 75°C

1.0

Tj = 25°C
0.1

0.01
0 40 80 120
PERCENT OF PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics

DS23014 Rev. 8 - 3 2 of 3 SBL1630CT - SBL1660CT


© Diodes Incorporated
www.diodes.com
NOT RECOMMENDED
FOR NEW DESIGN

Ordering Information (Note 4)

Device Packaging Shipping


SBL16xxCT* TO-220AB 50/Tube
* xx = Device type, e.g. SBL1645CT

Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02007.pdf.

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Copyright © 2010, Diodes Incorporated

www.diodes.com

DS23014 Rev. 8 - 3 3 of 3 SBL1630CT - SBL1660CT


© Diodes Incorporated
www.diodes.com

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