4N25/ 4N26/ 4N27/ 4N28

Vishay Semiconductors

Optocoupler, Phototransistor Output, With Base Connection

Features
• Isolation Test Voltage 5300 VRMS
• Interfaces with Common Logic Families
A 1 6 B
• Input-output Coupling Capacitance < 0.5 pF
• Industry Standard Dual-in-line 6-pin Package C 2 5 C

• Lead-free component NC 3 4 E
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179004 e3 Pb
Pb-free

Agency Approvals These isolation processes and the Vishay ISO9001

• UL1577, File No. E52744 System Code H or J, quality program results in the highest isolation perfor-
Double Protection mance available for a commercial plastic phototrans-
istor optocoupler.
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending The devices are also available in lead formed config-
Available with Option 1 uration suitable for surface mounting and are avail-
able either on tape and reel, or in standard tube
shipping containers.
Applications
Note:
AC Mains Detection For additional design information see Application
Reed relay driving Note 45 Normalized Curves
Switch Mode Power Supply Feedback
Telephone Ring Detection
Order Information
Logic Ground Isolation
Part Remarks
Logic Coupling with High Frequency Noise Rejection
4N25 CTR > 20 %, DIP-6
4N26 CTR > 20 %, DIP-6
Description
4N27 CTR > 10 %, DIP-6
The 4N25 family is an Industry Standard Single Chan-
4N28 CTR > 10 %, DIP-6
nel Phototransistor Coupler.This family includes the
4N25/ 4N26/ 4N27/ 4N28. Each optocoupler consists 4N25-X006 CTR > 20 %, DIP-6 400 mil (option 6)
of gallium arsenide infrared LED and a silicon NPN 4N25-X007 CTR > 20 %, SMD-6 (option 7)
phototransistor. 4N25-X009 CTR > 20 %, SMD-6 (option 9)
These couplers are Underwriters Laboratories (UL) 4N26-X006 CTR > 20 %, DIP-6 400 mil (option 6)
listed to comply with a 5300 VRMS isolation test volt- 4N26-X007 CTR > 20 %, SMD-6 (option 7)
age. This isolation performance is accomplished 4N26-X009 CTR > 20 %, SMD-6 (option 9)
through special Vishay manufacturing process.
4N27-X007 CTR > 10 %, SMD-6 (option 7)
Compliance to DIN EN 60747-5-2(VDE0884)/ DIN EN
4N27-X009 CTR > 10 %, SMD-6 (option 9)
60747-5-5 pending partial discharge isolation specifi-
cation is available by ordering option1. 4N28-X009 CTR > 10 %, SMD-6 (option 9)

For additional information on the available options refer to

Option Information.

Document Number 83725 www.vishay.com

Rev. 1.4, 26-Jan-05 1
4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.

Input
Parameter Test condition Symbol Value Unit
Reverse voltage VR 6.0 V
Forward current IF 60 mA
Surge current t < 10 µs IFSM 2.5 A
Power dissipation Pdiss 100 mW

Output
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown voltage VCEO 70 V
Emitter-base breakdown voltage VEBO 7.0 V
Collector current IC 50 mA
Collector currrent t < 1.0 ms IC 100 mA
Power dissipation Pdiss 150 mW

Coupler
Parameter Test condition Symbol Value Unit
Isolation test voltage VISO 5300 VRMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between ≥ 0.4 mm
emitter and detector
Comparative tracking index DIN IEC 112/VDE0303, part 1 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature Tstg - 55 to + 150 °C
Operating temperature Tamb - 55 to + 100 °C
Junction temperature Tj 100 °C
Soldering temperature max.10 s, dip soldering: Tsld 260 °C
distance to seating plane
≥ 1.5 mm

www.vishay.com Document Number 83725

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 4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Input
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage 1) IF = 50 mA VF 1.3 1.5 V

Reverse current1) VR = 3.0 V IR 0.1 100 µA

Capacitance VR = 0 V CO 25 pF
1)
Indicates JEDEC registered values

Output
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-base breakdown IC = 100 µA BVCBO 70 V
voltage1)
Collector-emitter breakdown IC = 1.0 mA BVCEO 30 V
voltage1)
Emitter-collector breakdown IE = 100 µA BVECO 7.0 V
voltage1)
ICEO(dark)1) VCE = 10 V, (base open) 4N25 5.0 50 nA
4N26 5.0 50 nA
4N27 5.0 50 nA
4N28 10 100 nA
ICBO(dark)1) VCB = 10 V, (emitter open) 2.0 20 nA
Collector-emitter capacitance VCE = 0 CCE 6.0 pF
1)
Indicates JEDEC registered values

Coupler
Parameter Test condition Part Symbol Min Typ. Max Unit
Isolation voltage 1) Peak, 60 Hz 4N25 VIO 2500 V
4N26 VIO 1500 V
4N27 VIO 1500 V
4N28 VIO 500 V
Saturation voltage, collector- ICE = 2.0 mA, IF = 50 mA VCE(sat) 0.5 V
emitter
Resistance, input output1) VIO = 500 V RIO 100 GΩ
Capacitance (input-output) f = 1.0 MHz CIO 0.5 pF
1)
Indicates JEDEC registered values

Current Transfer Ratio

Parameter Test condition Part Symbol Min Typ. Max Unit
DC Current Transfer Ratio1) VCE = 10 V, IF = 10 mA 4N25 CTRDC 20 50 %
4N26 CTRDC 20 50 %
4N27 CTRDC 10 30 %
4N28 CTRDC 10 30 %
1)
Indicates JEDEC registered value

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4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

Switching Characteristics
Parameter Test condition Symbol Min Typ. Max Unit
Rise and fall times VCE = 10 V, IF = 10 mA, RL = 100 Ω tr, tf 2.0 µs

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

1.4 1.5
Normalized to:
1.3 Vce=10 V, IF=10 mA, TA=25°C

NCTR - Normalized CTR

TA = –55°C CTRce(sat) Vce=0.4 V
VF - Forward Voltage - V

1.2
1.0
TA = 25°C TA=50°C
1.1

1.0
0.5
0.9 TA = 85°C
NCTR(SAT)
0.8 NCTR

0.7 0.0
.1 1 10 100
.1 1 10 100
IF - Forward Current - mA IF- LED Current - mA
i4n25_01 i4n25_03

Figure 1. Forward Voltage vs. Forward Current Figure 3. Normalized Non-saturated and Saturated CTR vs. LED
Current

1.5 1.5
Normalized to: Normalized to:
Vce=10 V, IF=10 mA, TA=25°C Vce=10 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce=0.4 V CTRce(sat) Vce=0.4 V

NCTR - Normlized CTR

1.0 1.0
TA=25°C TA=70°C

0.5
0.5
NCTR(SAT)
NCTR(SAT) NCTR
NCTR 0.0
0.0 .1 1 10 100
0 1 10 100 IF - LED Current - mA
IF - LED Current - mA
i4n25_02 i4n25_04

Figure 2. Normalized Non-Saturated and Saturated CTR vs. LED Figure 4. Normalized Non-saturated and saturated CTR vs. LED
Current Current

www.vishay.com Document Number 83725

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 4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

1.5 1.5
Normalized to: Normalized to:

NCTRcb - Normalized CTRcb

Vce=10 V, IF=10 mA, TA=25°C Vcb=9.3 V, IF=10 mA, TA=25°C
NCTR - Normalized CTR

CTRce(sat) Vce = 0.4 V

1.0 1.0
TA=85°C

0.5 0.5
25°C
NCTR(SAT) 50°C
NCTR 70°C

0.0 0.0
.1 1 10 100 .1 1 10 100
IF - LED Current - mA IF - LED Current - mA
i4n25_05 i4n25_08

Figure 5. Normalized Non-saturated and saturated CTR vs. LED Figure 8. Normalized CTRcb vs. LED Current and Temp.
Current

35 10
Normalized to:
30 IF=10 mA, TA=25°C
Ice - Collector Current - mA

Normalized Photocurrent

25
50°C 1
20
70°C
15
25°C 85°C
10 0.1
Nib, TA=–20°C
5 Nib, TA= 25°C
Nib, TA= 50°C
0 Nib, TA= 70°C
0 10 20 30 40 50 60 0.01
IF - LED Current - mA .1 1 10 100
i4n25_06 i4n25_09 IF - LED Current - mA

Figure 6. Collector-Emitter Current vs. Temperature and LED Figure 9. Normalized Photocurrent vs. IF and Temp.
Current

5 1.2
10 70°C
4
Iceo - Collector-Emitter - nA

10
NHFE - Normalized HFE

3 1.0
10 25°C
2 –20°C
10
0.8
1 Vce = 10 V
10
Typical Normalized to:
0 Ib=20 µA, Vce=10 V, TA=25°C
10
0.6
10 –1

10 –2
–20 0 20 40 60 80 100 0.4
1 10 100 1000
TA - Ambient Temperature - °C Ib - Base Current - µA
i4n25_07 i4n25_10

Figure 7. Collector-Emitter Leakage Current vs.Temp. Figure 10. Normalized Non-saturated HFE vs. Base Current and
Temperature

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4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors
NHFE(sat) - Normalized Saturated HFE

1.5
Normalized to:
Vce=10 V, Ib=20 µA VCC = 5.0 V
70°C 50°C T A =25°C
1.0
F=10 KHz, RL
25°C DF=50%

–20°C VO
0.5
IF=1 0 mA
Vce=0.4 V

0.0
1 10 100 1000
i4n25_11 Ib - Base Current - µA i4n25_14

Figure 11. Normalized HFE vs. Base Current and Temp. Figure 14. Switching Schematic

1000 2.5
IF =10 mA,TA=25°C
tPHL - Propagation Delay - µs
tPLH - Propagation Delay - µs

VCC =5.0 V, Vth=1.5 V

tPHL
100 2.0

10 1.5
tPLH

1 1.0
.1 1 10 100
RL - Collector Load Resistor - kΩ
i4n25_12

Figure 12. Propagation Delay vs. Collector Load Resistor

IF

tD
VO tR
tPLH

VTH=1.5 V

tPHL tS tF

i4n25_13

Figure 13. Switching Timing

www.vishay.com Document Number 83725

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 4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

Package Dimensions in Inches (mm)

For 4N25/26/27..... see DIL300-6 Package dimension in the Package Section.
For 4N28 and for products with an option designator (e.g. 4N25-X001 or 4N26-X007)..... see DIP-6 Package dimensions in the Package
Section.

DIL300-6 Package Dimensions

14770

DIP-6 Package Dimensions

pin one ID
3 2 1

.248 (6.30)
.256 (6.50)

4 5 6 ISO Method A

.335 (8.50)
.343 (8.70)
.300 (7.62)
.039 .048 (0.45)
.022 (0.55) typ.
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4° 18°
typ. .114 (2.90)
.031 (0.80) min. .130 (3.0)
3°–9° .010 (.25)
.031 (0.80) typ.
.018 (0.45) .035 (0.90)
.022 (0.55) .300–.347
.100 (2.54) typ. (7.62–8.81)
i178004

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4N25/ 4N26/ 4N27/ 4N28
Vishay Semiconductors

Option 6 Option 7 Option 9

.407 (10.36) .300 (7.62) .375 (9.53)
.391 (9.96) TYP. .395 (10.03)
.307 (7.8)
.291 (7.4) .300 (7.62)
ref.
.028 (0.7)
MIN. .180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249) .012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.014 (0.35) .331 (8.4) .040 (1.02)
15° max.
.010 (0.25) MIN. .315 (8.00)
.400 (10.16) min.
.430 (10.92) .406 (10.3)
MAX. 18450

www.vishay.com Document Number 83725

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Vishay Semiconductors

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

Document Number 83725 www.vishay.com

Rev. 1.4, 26-Jan-05 9