Signature and Name of Invigilator OMR Sheet No. : ......................................................

(To be filled by the Candidate)

1. (Signature)
Roll No.
(Name)
(In figures as per admission card)

2. (Signature) Roll No.

(In words)
(Name)
Test Booklet No.
J—8 8 0 9 PAPER—II
Time : 1¼ hours] ELECTRONIC SCIENCE [Maximum Marks : 100
Number of Pages in this Booklet : 16 Number of Questions in this Booklet : 50
Instructions for the Candidates ¬⁄ˡÊÊÁÕ¸ÿÙ¢ ∑ Á‹∞ ÁŸŒ¸‡Ê

 

  



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1 
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9 Use only Blue/Black Ball point pen. 11. Á∑ ‚Ë ÷Ë ¬˝∑ Ê⁄ ∑ Ê ‚¢ªáÊ∑ (∑Ò ‹∑È ‹≈ ⁄) ÿÊ ‹Êª ≈ ’‹ •ÊÁŒ ∑ Ê


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J—8809 1 P.T.O.

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 ELECTRONIC SCIENCE
PAPER—II

Note : This paper contains fifty (50) objective-type questions, each question carrying
two (2) marks. Attempt all of them.

1. When the rms output voltage of the bridge full–wave rectifier is 20 V the PIV across the
diode is :

(A) 28.2 (B) 19.3 (C) 40 (D) 31.42

2. When a Si transistor is in saturation mode the VCESAT is :

(A) 5V (B) 0.3 V (C) 1V (D) 0V

3. For a two part reciprocal network, the output open–circuit voltage divided by the input
current is equal to :

1
(A) B (B) Z12 (C) y 12 (D) h 12

4. The Laplace transform of (tsint) is :

2 2s
(A) 2
(s 11) 2 (B) (s 11)2
2

s 2s
(C) 2
(s 11) 2 (D) (s 21)2
2

5. For step input the output of an integrator is :

(A) a pulse (B) a triangular wave form

(C) a spike (D) a ramp

J—8809 2

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6. Two ideal FETs each characterized by the parameters gm and rd are connected in
parallel. The composite FET is characterized by :

gm gm 2rd
(A) 2 and 2 rd (B) 2 and 2

r
(C) 2 g m and d 2 (D) 2 gm and 2 rd

7. A 3–Variable Karnaugh map has :

(A) eight cells (B) three cells (C) sixteen cells (D) four cells

8. The number of comparators in a parallel convertor type 8–bit A to D convertor :

(A) 8 (B) 16 (C) 256 (D) 255

9. The jump address of RST2 instruction in 8085 is :

(A) 0000H (B) 0008H (C) 0010H (D) 0018H

10. Which I/O port of 8051 does not have dual function ?

(A) P0 (B) P1 (C) P2 (D) P3

11. The FORTRAN statement X55/1013.0 * 15/5.0 * 2110 * 3 will compute the value of
X as :

(A) 48.5 (B) 48 (C) 34.5 (D) 35

12. Which conversion specifier is used with hexadecimal data type ?

(A) %x (B) %d (C) %f (D) %o

J—8809 3 P.T.O.

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 s
13. In a given medium 5 3 . The magnetic and electric fields are out of phase by :
ωε

(A) 158 (B) 608 (C) 908 (D) 308

14. A lossless line of length 500 m has L510 mH/m and C50.1 pF/m at 1 MHz. The
electrical length of the line is :

(A) 3608 (B) 2708 (C) 1808 (D) 908

15. If the carrier of a 100 percent modulated AM wave is suppressed, the percentage power
saving will be :

(A) 50 (B) 66.66 (C) 150 (D) 100

16. Ten bit errors occur in two million transmitted bits. The bit error rate is :

(A) 2310 25 (B) 5310 25 (C) 5310 26 (D) 2310 26

17. The value of ON – state voltage of an SCR is approximately :

(A) 100 V (B) 50 V (C) 500 V (D) 2V

18. A silicon photodetector cannot be used to detect the wavelength :

(A) 1.3 mm (B) 0.633 mm (C) 0.85 mm (D) 1.0 mm

19. Which transducer has infinite resolution ?

(A) thermistor (B) LVDT (C) thermocouple (D) RTD

20. Which controller produces residual error ?

(A) On-off (B) Integral (C) Proportional (D) PID

J—8809 4

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 Questions 21 to 30 : The following items consist of two statements, one labelled the
“Assertion (A)” and the other labelled the “Reason (R)”. You
are to examine these two statements carefully and decide if the
Assertion (A) and the Reason (R) are individually true and if so
whether the Reason is a correct explanation of the Assertion.
Select your answers to these items using the codes given below
and mark your answer accordingly :

Codes :

(A) Both (A) and (R) are true and (R) is the correct explanation of (A)

(B) Both (A) and (R) are true but (R) in not correct explanation of (A)

(C) (A) is true but (R) is false

(D) (A) is false but (R) is true

21. Assertion (A) : Silicon diodes are preferred to germanium diodes for high temperature
operation.

Reason (R) : The reverse saturation current in a silicon diode is smaller than in a
germanium diode.

22. Assertion (A) : In two part networks Y and Z parameters are interrelated and hence
need not be defined separately.

Reason (R) : Z parameters cannot be defined at high frequency but Y parameters

can be defined.

23. Assertion (A) : Multivibrators with 555 are preferred over those with BJT and digital
ICs.

Reason (R) : 555 provides variation in duty cycle from 0 to 100% and drive a TTL
load.

24. Assertion (A) : Race around condition occurs in all flip flops.

Reason (R) : Race around condition occurs in logic circuits due to propagation delay.

25. Assertion (A) : Software interrupts are provided in 8086 microprocessors.

Reason (R) : Interrupts are generated by exceptions in 8086 microprocessors.

J—8809 5 P.T.O.

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26. Assertion (A) : Break statement is used in switch-case statement.

Reason (R) : In switch-case statement use of break prevents unrelated conditions

to be skipped.

27. Assertion (A) : An electromagnetic wave propagating in free space along the
z – direction is necessarily y – polarized.

Reason (R) : Electromagnetic waves in free space are transverse waves.

28. Assertion (A) : BPSK and QPSK modulation schemes increase the binary data rate
in a given bandwidth.

Reason (R) : In QPSK modulation each pair of bits is represented by a specific

phase.

29. Assertion (A) : Modern optical communication systems use the 1.55 mm band.

Reason (R) : Pulse dispersion in optical fibers is minimum at 1.55 mm.

30. Assertion (A) : Thermistor linearity can be improved by connecting a resistor in series
with the thermistor.

Reason (R) : Connecting a resistance in series with a thermistor will reduce the
sensitivity.

31. Consider the diodes given below.

(i) Germaniun diode

(ii) Silicon diode

(iii) Schottky diode

(iv) Point contact diode

The correct order of increasing cut-in voltage will be :

(A) (iv) (i) (iii) (ii)

(B) (i) (iii) (ii) (iv)

(C) (ii) (iv) (iii) (i)

(D) (iv) (ii) (i) (iii)

J—8809 6

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32. Consider the following data size.

(i) Byte

(ii) Bit

(iii) Word

(iv) Nibble

The correct order of decreasing data size is :

(A) (ii) (i) (iii) (iv)

(B) (iv) (iii) (ii) (i)

(C) (i) (ii) (iii) (iv)

(D) (iii) (i) (iv) (ii)

33. Consider the following guided transmission lines.

(i) Coaxial cable

(ii) Metallic waveguide

(iii) Optical fiber

(iv) Twisted pair

The correct order in increasing order of bandwidth is :

(A) (iii) (ii) (i) (iv)

(B) (ii) (i) (iii) (iv)

(C) (iv) (i) (ii) (iii)

(D) (iv) (ii) (iii) (i)

J—8809 7 P.T.O.

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34. Consider the following electromagnetic waves.

(i) Microwaves

(ii) X - rays

(iii) Ultraviolet radiation

(iv) Infrared radiation

The correct order in increasing wave length is :

(A) (i) (iv) (iii) (ii)

(B) (ii) (iii) (iv) (i)

(C) (iii) (iv) (ii) (i)

(D) (iv) (iii) (ii) (i)

35. Consider the following amplifier classes.

(i) Class C

(ii) Class A B

(iii) Class A

(iv) Class B

The correct order in increasing efficiencies is :

(A) (ii) (iii) (iv) (i)

(B) (iv) (iii) (iv) (i)

(C) (iii) (iv) (ii) (i)

(D) (iii) (ii) (iv) (i)

J—8809 8

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36. Match List– I with List– II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) MOSFET (i) Thermal runaway

(b) Breakdown Diodes (ii) Isolation

(c) IC Fabrication (iii) Gate Capacitance

(d) Transistor (iv) Avalanche

Codes :

(a) (b) (c) (d)

(A) (iii) (iv) (ii) (i)

(B) (iv) (ii) (i) (iii)

(C) (i) (ii) (iii) (iv)

(D) (ii) (i) (iv) (iii)

37. Match the List– I with List– II and select the correct answer using the codes given
below the lists :

List–I List–II

(a) Thevenin’s Theorem (i) Transmission Line

(b) Poles and Zeroes (ii) Voltage Source

(c) Superposition Theorem (iii) S - plane

(d) ABCD Parameters (iv) Linear Network

Codes :

(a) (b) (c) (d)

(A) (iv) (i) (iii) (ii)

(B) (i) (ii) (iii) (iv)

(C) (ii) (iii) (iv) (i)

(D) (iii) (iv) (ii) (i)

J—8809 9 P.T.O.

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38. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Differentiator (i) 0.5 V / ms

(b) Voltage Regulator (ii) Wave shaping

(c) V to F convertor (iii) IC 7809

(d) IC 741 (iv) noise free transmission

Codes :

(a) (b) (c) (d)

(A) (iii) (iv) (ii) (i)

(B) (ii) (iii) (iv) (i)

(C) (iv) (iii) (i) (ii)

(D) (iii) (i) (ii) (iv)

39. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Counters (i) Totempole output

(b) TTL logic (ii) Sequential logic

(c) CMOS (iii) Fastest logic

(d) ECL (iv) VDD/3

Codes :

(a) (b) (c) (d)

(A) (i) (ii) (iii) (iv)

(B) (iv) (ii) (iii) (iv)

(C) (iii) (i) (iv) (ii)

(D) (ii) (i) (iv) (iii)

J—8809 10

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40. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(A) IC 8279 (i) Serial communication

(B) IC 8251 (ii) Timer counter

(C) IC 8051 (iii) Keyboard controller

(D) IC 8155 (iv) Bit addressable RAM

Codes :

(a) (b) (c) (d)

(A) (i) (iii) (iv) (ii)

(B) (iii) (i) (iv) (ii)

(C) (ii) (i) (iii) (iv)

(D) (iv) (i) (ii) (iii)

41. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) 8 – Characters (i) register

(b) do – while (ii) c – variable

(c) Compiler and linker (iii) executable program

(d) Storage class (iv) executed at least once

Codes :

(a) (b) (c) (d)

(A) (ii) (iv) (iii) (i)

(B) (i) (iii) (iv) (ii)

(C) (iv) (ii) (i) (iii)

(D) (ii) (i) (iii) (iv)

J—8809 11 P.T.O.

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42. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Klystron (i) Negative Resistance

(b) Gunn Diode (ii) Detection

(c) Magnetron (iii) Bunching

(d) PIN Diode (iv) Microwave Oven

Codes :

(a) (b) (c) (d)

(A) (i) (ii) (iv) (iii)

(B) (i) (iv) (ii) (iii)

(C) (iii) (i) (iv) (ii)

(D) (iv) (ii) (i) (ii)

43. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Amplitude Modulation (i) Frequency interleaving

(b) Frequency Modulation (ii) Multiplexer

(c) Time Division Multiplexing (iii) Modulation index > 1

(d) Frequency Division Multiplexing (iv) Modulation index < 1

Codes :

(a) (b) (c) (d)

(A) (iii) (iv) (ii) (i)

(B) (iv) (iii) (i) (ii)

(C) (iii) (i) (ii) (iv)

(D) (iv) (iii) (ii) (i)

J—8809 12

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44. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Intermodal Dispersion (i) Photo diode

(b) Intramodal Dispersion (ii) Laser

(c) Responsivity (iii) Multimode Fiber

(d) Quantum efficiency (iv) Single mode fiber

Codes :

(a) (b) (c) (d)

(A) (iii) (iv) (ii) (i)

(B) (iii) (iv) (i) (ii)

(C) (i) (ii) (iii) (iv)

(D) (ii) (iii) (i) (iv)

45. Match List – I with List – II and select the correct answer using the codes given below
the lists :

List–I List–II

(a) Digital Multimeter (i) Phase

(b) Oscilloscope (ii) Temperature

(c) Bridge (iii) 4½ digit

(d) LM 35 (iv) L or C

Codes :

(a) (b) (c) (d)

(A) (ii) (iv) (iii) (i)

(B) (iii) (iv) (ii) (i)

(C) (iii) (i) (iv) (ii)

(D) (iv) (iii) (i) (ii)

J—8809 13 P.T.O.

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 Read the passage below and answer the questions (46-50) that follow based on your
understanding of the passage :

The tunnel diode is a thin junction diode which under low forward bias conditions
exhibits negative resistance. Because of thin junction and short transit time, it lends to
microwave application. Tunnel diode oscillators were found to be unstable. However,
if a high Q cavity is loosely coupled to the diode, a highly stable oscillator is obtained
with relative independence to temperature and bias voltage. The application of the
tunnel diode was in microwave oscillations and negative resistance amplifier.

The diode voltage-current characteristics illustrate two important properties of

the tunnel diode, namely, (i) diode exhibits dynamic negative resistance which is useful
for oscillator and amplifier, (ii) negative resistance occurs when both the applied voltage
and resulting current are low. The tunnel diode is a relatively low power device. The
negative resistance is capable of significant power gain.

Tunnel diode amplifiers may be used through out the microwave range as moderate to
low noise preamplifiers in all kinds of receivers. Tunnel diode amplifiers are immune to
ambient radiation encountered in interplanetary space and hence, practicable for space
work.

Gunn discovered the transferred electron effect and this effect was found in Gallium
Arsenide and Indium Phosphide. Gunn diodes are used as low power oscillators in
microwave receivers. The higher power Gunn oscillators are used as power output
oscillators, which include police radars, CW Doppler radars and burglar alarms.

Gunn diodes are greatly superior to IMPATT diodes. Gunn diode amplifiers cannot
compete for power output and low noise with GaAs FET amplifiers at frequencies
below 30 GHz.

Step recovery diodes are junction diodes which can store energy in their capacitance
and then generate harmonics by releasing a pulse of current. These diodes are widely
employed in all microwave semiconductor devices. Such a diode is also called a
snap – off varactor, which is a silicon or GaAs p–n junction diode. Step recovery diodes
are used in amplifiers for low-level noise performance in the X – band

46. Indicate which of the following diodes does not use negative resistance for operation.

(A) Schottky diode (B) Gunn diode

(C) IMPATT (D) Tunnel diode

47. Which of the following is not used as a microwave detector ?

(A) Crystal diode (B) Schottky diode

(C) Backward diode (D) PIN diode

J—8809 14

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48. One of the following microwave diodes is suitable for low power oscillators only :

(A) Tunnel (B) Avalanche (C) Gunn (D) IMPATT

49. For best low level noise performance in the X-band one of the following should be used :

(A) a bipolar transistor (B) a Gunn diode

(C) a step recovery diode (D) an IMPATT diode

50. The transferred-electron bulk effect occurs in :

(A) Germanium (B) Gallium Arsenide

(C) Silicon (D) Metal Semiconductor Junction

-oOo-

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 Space For Rough Work

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