TPS54620 4.5-V To 17-V Input, 6-A, Synchronous, Step-Down SWIFT™ Converter
TPS54620 4.5-V To 17-V Input, 6-A, Synchronous, Step-Down SWIFT™ Converter
TPS54620 4.5-V To 17-V Input, 6-A, Synchronous, Step-Down SWIFT™ Converter
TPS54620
SLVS949F – MAY 2009 – REVISED MAY 2017
EN PH 80
Co 75
PWRGD
R1 70
VSENSE
SS/TR 65
RT/CLK R2
60 VOUT = 3.3 V
COMP GND Fsw = 480 kHz
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54620
SLVS949F – MAY 2009 – REVISED MAY 2017 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 24
2 Applications ........................................................... 1 8.1 Application Information............................................ 24
3 Description ............................................................. 1 8.2 Typical Application ................................................. 24
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 34
5 Pin Configurations and Functions ....................... 4 10 Layout................................................................... 34
6 Specifications......................................................... 5 10.1 Layout Guidelines ................................................. 34
6.1 Absolute Maximum Ratings ..................................... 5 10.2 Layout Example .................................................... 35
6.2 ESD Ratings.............................................................. 5 10.3 Estimated Circuit Area .......................................... 36
6.3 Recommended Operating Conditions....................... 5 10.4 Thermal Consideration.......................................... 36
6.4 Thermal Information .................................................. 6 11 Device and Documentation Support ................. 37
6.5 Electrical Characteristics........................................... 6 11.1 Device Support...................................................... 37
6.6 Typical Characteristics .............................................. 8 11.2 Receiving Notification of Documentation Updates 37
7 Detailed Description ............................................ 11 11.3 Community Resources.......................................... 37
7.1 Overview ................................................................. 11 11.4 Trademarks ........................................................... 37
7.2 Functional Block Diagram ....................................... 12 11.5 Electrostatic Discharge Caution ............................ 37
7.3 Feature Description................................................. 12 11.6 Glossary ................................................................ 37
7.4 Device Functional Modes........................................ 19 12 Mechanical, Packaging, and Orderable
Information ........................................................... 38
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Updated data sheet text to our latest documentation and translations standards ................................................................. 1
• Removed all references to the SwitcherPro™ Software Tool because it is no longer available for this part ........................ 1
• Moved storage temperature ratings to the Absolute Maximum Ratings table........................................................................ 5
• Changed Handling Ratings table to ESD Ratings .................................................................................................................. 5
• Changed RHY package to RHL in the Thermal Information table ......................................................................................... 6
• Changed RGY values in the Thermal Information table......................................................................................................... 6
• Updated packages in the last bullet point of Layout Guidelines........................................................................................... 34
• Added information to the last list item in Layout Guidelines................................................................................................. 34
• Added recommended layout guide lines for sensitive components and the output sensing trace to the Layout
Guidelines section. ............................................................................................................................................................... 34
• Added Receiving Notification of Documentation Updates and Community Resources sections. ........................................ 37
• Added the Device Information table, Handling Ratings table, the Recommended Operating Conditions table, and the
Thermal Information table....................................................................................................................................................... 1
• Changed the Absolute Maximum Ratings for BOOT-PH, MAX value From: 7 V To: 7.7 V .................................................. 5
• Changed Equation 28 From: C7(nF) To: C5(nF).................................................................................................................. 27
• Changed From separate RHL and RGY packages To a combined RHL and RGY package ................................................ 4
• Changed title from 17 V Input, 6 A Output, Synchronous Step Down Switcher with Integrated FET (SWIFT) ..................... 1
• Changed PowerPAD to Exposed Thermal Pad...................................................................................................................... 4
• Changed Changed the Absolute Maximum Ratings for EN, MAX value From: 3 V To: 6 V.................................................. 5
• Changed minimum switching frequency min value from 180 to 160...................................................................................... 7
• Changed minimum switching frequency max value from 220 to 240..................................................................................... 7
• Added "Type 3" block around C11 ....................................................................................................................................... 19
• Changed PCB Layout graphic .............................................................................................................................................. 35
GND 2 13 BOOT
GND 3 12 PH
Exposed
PVIN 4 Thermal Pad 11 PH
(15)
PVIN 5 10 EN
VIN 6 9 SS/TR
7 8
VSENSE COMP
Pin Functions
PIN DESCRIPTION
I/O (1)
NAME NO.
Automatically selects between RT mode and CLK mode. An external timing resistor adjusts the
RT/CLK 1 I
switching frequency of the device; in CLK mode, the device synchronizes to an external clock.
GND 2, 3 G Return for control circuitry and low-side power MOSFET.
PVIN 4, 5 P Power input. Supplies the power switches of the power converter.
VIN 6 P Supplies the control circuitry of the power converter.
VSENSE 7 I Inverting input of the gm error amplifier.
Error amplifier output, and input to the output switch current comparator. Connect frequency
COMP 8 O
compensation to this pin.
Slow-start and tracking. An external capacitor connected to this pin sets the internal voltage reference
SS/TR 9 O rise time. The voltage on this pin overrides the internal reference. It can be used for tracking and
sequencing.
EN 10 I Enable pin. Float to enable. Adjust the input undervoltage lockout with two resistors.
PH 11, 12 O Switch node.
A bootstrap cap is required between BOOT and PH. The voltage on this cap carries the gate drive
BOOT 13 I
voltage for the high-side MOSFET.
Power Good fault pin. Asserts low if output voltage is low because of thermal shutdown, dropout, over-
PWRGD 14 G
voltage, EN shutdown, or during slow start.
Exposed
Thermal 15 G Thermal pad of the package and signal ground and it must be soldered down for proper operation.
PAD
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN MAX UNIT
VIN –0.3 20 V
PVIN –0.3 20 V
EN –0.3 6 V
BOOT –0.3 27 V
Input voltage VSENSE –0.3 3 V
COMP –0.3 3 V
PWRGD –0.3 6 V
SS/TR –0.3 3 V
RT/CLK –0.3 6 V
BOOT-PH 0 7.7 V
Output voltage PH –1 20 V
PH 10ns Transient –3 20 V
Vdiff (GND to exposed thermal pad) –0.2 0.2 V
RT/CLK ±100 µA
Source current
PH Current Limit A
PH Current Limit A
PVIN Current Limit A
Sink current
COMP ±200 µA
PWRGD –0.1 5 mA
Operating junction temperature –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
40 30
VIN = 12 V VIN = 12 V
RDS(on) − On Resistance − mW
RDS(on) − On Resistance − mW
27
35
24
30
21
25
18
20 15
−50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150
0.803
485
0.801
480
0.799
475
0.797
0.795 470
−50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150
μ
N
Figure 5. Shutdown Quiescent Current vs Input Voltage Figure 6. EN Pin Hysteresis Current vs Temperature
1.215
1.210
1.205
1.200
−50 −25 0 25 50 75 100 125 150
°C TJ − Junction Temperature − °C
Figure 7. Pin Pullup Current vs Temperature Figure 8. Pin UVLO Threshold vs Temperature
Non-Switching Operating Quiescent Current − mA
2.5
800
2.2
500
2.1
400 −50 −25 0 25 50 75 100 125 150
3 6 9 12 15
TJ − Junction Temperature − °C
VI − Input Voltage − V
Figure 9. Non-Switching Operating Quiescent Current (VIN) Figure 10. Slow Start Charge Current vs Temperature
vs Input Voltage
0.05 120
VIN = 12 V
PWRGD Threshold Current − mA
(SS/TR - Vsense) Offset − V
VSENSE Rising
0.04 110
VSENSE Falling
0.03 100
VSENSE Rising
0.02 90
VSENSE Falling
0.01 80
−50 −25 0 25 50 75 100 125 150 −50 −25 0 25 50 75 100 125 150
Figure 11. (SS/TR - VSENSE) Offset vs Temperature Figure 12. PWRGD Threshold vs Temperature
IOUT = 2 A
110
11
10 100
TJ = −40°C
9 TJ = 25°C
TJ = 150°C 90
8
7
80
6
5 70
1 5 9 13 17 −50 −25 0 25 50 75 100 125 150
Figure 13. High-Side Current Limit Threshold vs Input Figure 14. Minimum Controllable On-Time vs Temperature
Voltage
°C
Figure 15. Minimum Controllable Duty Ratio vs Junction Figure 16. BOOT-PH UVLO Threshold vs Temperature
Temperature
7 Detailed Description
7.1 Overview
The device is a 17-V, 6-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To
improve performance during line and load transients, the device implements a constant frequency peak current
mode control that also simplifies external frequency compensation. The wide switching frequency of 200 kHz to
1600 kHz allows for efficiency and size optimization when selecting the output filter components. The switching
frequency is adjusted using a resistor-to-ground on the RT/CLK pin. The device also has an internal phase lock
loop (PLL) controlled by the RT/CLK pin that can be used to synchronize the switching cycle to the falling edge
of an external system clock.
The device has been designed for safe monotonic start-up into prebiased loads. The default start-up is when VIN
is typically 4.0 V. The EN pin has an internal pullup current source that can be used to adjust the input voltage
undervoltage lockout (UVLO) with two external resistors. In addition, the EN pin can be floating for the device to
operate with the internal pullup current. The total operating current for the device is approximately 600 μA when
not switching and under no load. When the device is disabled, the supply current is typically less than 2 μA.
The integrated MOSFETs allow for high efficiency power supply designs with continuous output currents up to 6
amperes. The MOSFETs have been sized to optimize efficiency for lower duty cycle applications.
The device reduces the external component count by integrating the boot recharge circuit. The bias voltage for
the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor
voltage is monitored by a BOOT to PH UVLO (BOOT-PH UVLO) circuit allowing PH pin to be pulled low to
recharge the boot capacitor. The device can operate at 100% duty cycle as long as the boot capacitor voltage is
higher than the preset BOOT-PH UVLO threshold which is typically 2.1 V. The output voltage can be stepped
down to as low as the 0.8-V voltage reference (Vref).
The device has a power good comparator (PWRGD) with hysteresis which monitors the output voltage through
the VSENSE pin. The PWRGD pin is an open-drain MOSFET which is pulled low when the VSENSE pin voltage
is less than 91% or greater than 109% of the reference voltage Vref and asserts high when the VSENSE pin
voltage is 94% to 106% of the Vref.
The SS/TR (slow start/tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power up. A small value capacitor or resistor divider should be coupled to the pin for slow start or critical
power supply sequencing requirements.
The device is protected from output overvoltage, overload, and thermal fault conditions. The device minimizes
excessive output overvoltage transients by taking advantage of the overvoltage circuit power good comparator.
When the overvoltage comparator is activated, the high-side MOSFET is turned off and prevented from turning
on until the VSENSE pin voltage is lower than 106% of the Vref. The device implements both high-side MOSFET
overload protection and bidirectional low-side MOSFET overload protections which help control the inductor
current and avoid current runaway. The device also shuts down if the junction temperature is higher than thermal
shutdown trip point. The device is restarted under control of the slow-start circuit automatically when the junction
temperature drops 10°C typically below the thermal shutdown trip point.
Thermal
UVLO
Shutdown Shutdown
Enable
Ip Ih
Comparator
Shutdown
Shutdown
UV Logic Logic
Enable
Threshold
OV
Boot
Charge
SS/TR
HS MOSFET
Voltage
Current Power Stage
Reference
Comparator & Deadtime PH
Control
Logic
Slope PH
Compensation
VIN Regulator
Overload Recovery
and Oscillator LS MOSFET
Clamp with PLL Current Limit
Current
Sense
GND
GND
TPS54620
VIN
ip ih
R1
R2 EN
TPS54620
PVIN
ip ih
R1
R2 EN
TPS54620
PVIN
VIN
ip ih
R1
R2 EN
where
• Ih = 3.4 μA
• Ip = 1.15 μA
• VENRISING = 1.21 V
• VENFALLING = 1.17 V (3)
When the input UVLO is triggered, the EN pin is pulled below 1.21 V, or a thermal shutdown event occurs, the
device stops switching and enters low current operation. At the subsequent power up when the shutdown
condition is removed, the device does not start switching until it has discharged its SS/TR pin to ground ensuring
proper soft-start behavior.
PH
Power Stage VOUT
16 A/V a
R1 RESR
RL
COMP
c
0.8 V VSENSE CO
R3 Coea Roea
C2 gm
C1 1300 mA/V R2
7.3.17 Simple Small Signal Model for Peak Current Mode Control
Figure 21 is a simple small signal model that can be used to understand how to design the frequency
compensation. The device power stage can be approximated to a voltage-controlled current source (duty cycle
modulator) supplying current to the output capacitor and load resistor. The control-to-output transfer function is
shown in Equation 5 and consists of a DC gain, one dominant pole, and one ESR zero. The quotient of the
change in switch current and the change in COMP pin voltage (node c in Figure 20) is the power stage
transconductance (gmps), which is 16 A/V for the device. The DC gain of the power stage is the product of gmps,
and the load resistance (RL) as shown in Equation 6 with resistive loads. As the load current increases, the DC
gain decreases. This variation with load may seem problematic at first glance, but fortunately the dominant pole
moves with load current (see Equation 7). The combined effect is highlighted by the dashed line in Figure 22. As
the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB crossover
frequency the same for the varying load conditions, making it easier to design the frequency compensation.
VOUT
VC
RESR
RL
gm ps
CO
Figure 21. Simplified Small Signal Model for Peak Current Mode Control
VOUT
VC Adc
RESR fp
RL
gm ps
CO
fz
Figure 22. Simplified Frequency Response for Peak Current Mode Control
æ s ö
ç1+ ÷
2p ´ ¦z ø
= Adc ´ è
VOUT
VC æ s ö
ç1+ ÷
è 2p ´ ¦p ø (5)
Adc = gmps ´ RL
where
• gmps is the power stage gain (16 A/V).
• RL is the load resistance (6)
1
¦p =
C O ´ R L ´ 2p
where
• CO is the output capacitance.
• RL is the load resistance (7)
1
¦z =
CO ´ RESR ´ 2p
where
• CO is the output capacitance.
• RESR is the equivalent series resistance of the output capacitor. (8)
VOUT
C11
R8
VSENSE
COMP Type 2A Type 2B
Type 3
Vref
gm ea R4 C6 R4
R9
Roea Coea C4
C4
The general design guidelines for device loop compensation are as follows:
1. Determine the crossover frequency, fc. A good starting point is 1/10th of the switching frequency, fsw.
2. R4 can be determined by:
2p ´ ¦ c ´ VOUT ´ Co
R4 =
gmea ´ Vref ´ gmps
where
• gmea is the GM amplifier gain (1300 μA/V)
• gmps is the power stage gain (12 A/V)
• Vref is the reference voltage (0.8 V) (9)
æ 1 ö
ç ¦p = ÷
3. Place a compensation zero at the dominant pole: è CO ´ RL ´ 2p ø
C4 can be determined by:
R ´ Co
C4 = L
R4 (10)
4. C6 is optional. It can be used to cancel the zero from the ESR (Equivalent Series Resistance) of the output
capacitor Co.
R ´ Co
C6 = ESR
R4 (11)
5. Type III compensation can be implemented with the addition of one capacitor, C11. This allows for slightly
higher loop bandwidths and higher phase margins. If used, C11 is calculated from Equation 12.
1
C11 =
(2 × p × R8 × fc ) (12)
250
200
RT − Resistance − kW
150
100
50
0
200 400 600 800 1000 1200 1400 1600
RT/CLK
mode select TPS54620
RT/CLK
Rrt
PWRGD
EN EN EN = 2 V / div
Vout1 = 1 V / div
SS/TR SS/TR
Vout2 = 1 v / div
PWRGD
Figure 26. Sequential Start-Up Sequence Figure 27. Sequential Start-Up Using EN and
.
PWRGD
Figure 28 shows the method implementing ratiometric sequencing by connecting the SS/TR pins of two devices
together. The regulator outputs ramp up and reach regulation at the same time. When calculating the slow start
time the pullup current source must be doubled in Equation 4. Figure 29 shows the results of Figure 28.
TPS54620 EN = 2 V / div
EN
SS/TR
Vout1 = 1 V / div
PWRGD
Vout2 = 1 v / div
TPS54620
Time = 20 msec / div
EN
SS/TR
.
PWRGD
Figure 28. Ratiometric Start-Up Sequence Figure 29. Ratiometric Start-Up Using Coupled
SS/TR Pins
TPS54620
EN VOUT1
SS/TR
PWRGD
TPS54620
EN VOUT 2
R1
SS/TR
R2
PWRGD
R3
R4
EN = 2 V / div EN = 2 V / div
Figure 31. Ratiometric Start-Up With Vout1 Leading Figure 32. Ratiometric Start-Up With Vout2 Leading
Vout2 Vout1
EN = 2 V / div
Vout1 = 1 V / div
Vout2 = 1 V / div
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
The current flowing through the inductor is the inductor ripple current plus the output current. During power up,
faults or transient load conditions, the inductor current can increase above the calculated peak inductor current
level calculated above. In transient conditions, the inductor current can increase up to the switch current limit of
the device. For this reason, the most conservative approach is to specify an inductor with a saturation current
rating equal to or greater than the switch current limit rather than the peak inductor current.
f sw
f co = f pmod ×
2 (34)
Now the compensation components can be calculated. First calculate the value for R2 which sets the gain of the
compensated network at the crossover frequency. Use Equation 35 to determine the value of R2.
2p × f c × Vout × Cout
R2 =
gmea × Vref × gmps
(35)
Next calculate the value of C3. Together with R2, C3 places a compensation zero at the modulator pole
frequency. Equation 36 to determine the value of C3.
Vout × Cout
C3 =
Iout × R2 (36)
Using Equation 35 and Equation 36 the standard values for R2 and C3 are 1.69 kΩ and 8200 pF.
An additional high frequency pole can be used if necessary by adding a capacitor in parallel with the series
combination of R2 and C3. The pole frequency is given by Equation 37. This pole is not used in this design.
1
fp =
2 × p × R2 × Cp (37)
Figure 35. 3.3-V Output Power Supply Design (PMP4854-2) With Fast Transients
Vin = 10 V / div
Vout = 50 mV / div (ac coupled)
EN = 2 V / div
SS/TR = 1 V / div
Vout = 2 V / div
EN = 2 V / div
Vout = 2 V / div
SS/TR = 1 V / div
Vout = 2 V / div
EN = 2 V / div
EN = 2 V / div
SS/TR = 1 V / div
SS/TR = 1 V / div
Vout = 2 V / div
Vout = 2 V / div
PH = 5 V / div PH = 5 V / div
Figure 43. Output Voltage Ripple With No Load Figure 44. Output Voltage Ripple With Full Load
PH = 5 V / div
PH = 5 V / div
60 180 0.05
50 150 0.04
40 Phase 120
0.03
30 90
Percent Regulation - %
60 0.02
20
Phase - Deg
Gain - dB
Gain
10 30 0.01
0 0
0
Io = 3A
-10 -30 Io = 0A
-0.01
-20 -60
-30 -90 -0.02
-40 -120
-0.03
-50 -150 Io = 6A
-0.04
-60 -180
10
100
1000
10000
100000
1000000
-0.05
8 9 10 11 12 13 14 15 16 17
Frequency - Hz Input Voltage - V
0.05 10 10
Vin = 12 V
0.04 Vout
1 1
0.03
Vsense Voltage - V
Output Voltage - V
Percent Regulation - %
-0.01
0.001 0.001
-0.02
0.0001 0.0001
-0.03
-0.04
0.00001 0.00001
-0.05 0.001 0.01 0.1 1 10
0 1 2 3 4 5 6 7 8
Output Current - A Track In Voltage - V
150 150
100 100
75 75
VIN = 12 V,
50 VOUT = 3.3 V, 50
Fsw = 480 kHz,
room temp, no air flow
25 25
0 1 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 3.5 4
Load Current - A PD - IC Power Dissipation - W
Figure 51. Maximum Ambient Temperature vs Load Figure 52. Maximum Ambient Temperature vs IC Power
Current Dissipation
150 100
TA = room temperature,
95
no air flow
TJ - Junction Temperature - °C
125 90
85
Efficiency - %
100 80
VOUT = 5 V
75
VOUT = 3.3 V
75 70
VOUT = 1.8 V
65
VOUT = 1.2 V
50 60
VIN = 12 V VOUT = 0.8 V
55
Fsw = 500 kHz
25 50
0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 4 5 6
Pic - IC Power Dissipation - W Load Current - A
Figure 53. Junction Temperature vs IC Power Dissipation Figure 54. Efficiency vs Load Current
10 Layout
TOPSIDE
GROUND
AREA
FREQUENCY SET RESISTOR
OUTPUT
FILTER
CAPACITOR
PVIN
INPUT
BYPASS
CAPACITOR RT/CLK PWRGD
BOOT
CAPACITOR
GND BOOT OUTPUT
EXPOSED THERMAL
PAD AREA INDUCTOR
GND PH
PVIN PH
PVIN EN
PH VOUT
VIN SS/TR
VSENSE COMP
PVIN
VIN
SLOW START
CAPACITOR UVLO SET
RESISTORS
VIN
INPUT
BYPASS
CAPACITOR
COMPENSATION
FEEDBACK NETWORK
RESISTORS
11.4 Trademarks
SwitcherPro, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 23-May-2017
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)
905-5462001 ACTIVE VQFN RGY 14 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 150 54620
& no Sb/Br)
TPS54620RGYR ACTIVE VQFN RGY 14 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 150 54620
& no Sb/Br)
TPS54620RGYT ACTIVE VQFN RGY 14 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 150 54620
& no Sb/Br)
TPS54620RHLR ACTIVE VQFN RHL 14 3000 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 150 54620
& no Sb/Br)
TPS54620RHLT ACTIVE VQFN RHL 14 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -40 to 150 54620
& no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 23-May-2017
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jan-2019
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 24-Jan-2019
Pack Materials-Page 2
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