N-CHANNEL ENHANCEMENT

ZVN3310A MODE VERTICAL DMOS FET ZVN3310A

ISSUE 2 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 100 Volt VDS
1.4 1.6 * RDS(on)= 10Ω
ID(On) -On-State Drain Current (Amps)

ID(On) -On-State Drain Current (Amps)

VGS= 1.4
1.2
10V
9V VGS=
1.0 1.2
8V 10V D
1.0 9V G
0.8 8V
S
7V
6V
0.8 7V E-Line
0.6
0.6 6V TO92 Compatible
0.4 5V
0.4 5V ABSOLUTE MAXIMUM RATINGS.
0.2 4V 4V
0.2 PARAMETER SYMBOL VALUE UNIT
0 3V 3V
0 Drain-Source Voltage V DS 100 V
0 10 20 30 40 50 0 2 4 6 8 10
Continuous Drain Current at T amb=25°C ID 200 mA
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I DM 2 A
Output Characteristics Saturation Characteristics Gate-Source Voltage V GS ± 20 V
Power Dissipation at T amb=25°C P tot 625 mW
ID(On)-On-State Drain Current (Amps)

1.4 Operating and Storage Temperature Range T j :T stg -55 to +150 °C

10
VDS-Drain Source Voltage (Volts)

VDS=
1.2
8
25V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.0
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
6 0.8
Drain-Source Breakdown BV DSS 100 V I D=1mA, V GS=0V
ID= 0.6 Voltage
4 1A
0.4
Gate-Source Threshold V GS(th) 0.8 2.4 V ID=1mA, V DS= V GS
2 0.5A 0.2 Voltage
0.2A
0 Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V
0
0 4 8 12 16 20 0 2 4 6 8 10
Zero Gate Voltage Drain I DSS 1 µA V DS=100V, V GS=0
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Current 50 µA V DS=80V, V GS=0V, T=125°C (2)

Voltage Saturation Characteristics Transfer Characteristics On-State Drain Current(1) I D(on) 500 mA V DS=25V, V GS=10V
Static Drain-Source On-State R DS(on) 10 Ω V GS=10V,I D=500mA
Resistance (1)
RDS(ON) -Drain Source Resistance (Ω)

100 2.4
Forward Transconductance(1)(2 g fs 100 mS V DS=25V,I D=500mA
2.2 ID=-0.5A
Normalised RDS(on) and VGS(th)

on
) )
2.0 S(
RD
ce Input Capacitance (2) C iss 40 pF
1.8 an
ist
es
1.6 eR Common Source Output C oss 15 pF V DS=25V, V GS=0V, f=1MHz
rc
10 1.4 ou
-S Capacitance (2)
ID= 1.2 rain
D
1A
0.5A 1.0 Reverse Transfer Capacitance C rss 5 pF
0.2A 0.8 Gate Thresh
old
(2)
Voltage VGS
(th)
0.6
Turn-On Delay Time (2)(3) t d(on) 5 ns
1 0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
1 2 3 4 5 6 7 8 9 10 20 Rise Time (2)(3) tr 7 ns V DD ≈25V, I D=500mA
VGS-Gate Source Voltage (Volts) T-Temperature (C°) Turn-Off Delay Time (2)(3) t d(off) 6 ns
On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) tf 7 ns

3-379 3-378
 N-CHANNEL ENHANCEMENT
ZVN3310A MODE VERTICAL DMOS FET ZVN3310A
ISSUE 2 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 100 Volt VDS
1.4 1.6 * RDS(on)= 10Ω
ID(On) -On-State Drain Current (Amps)

ID(On) -On-State Drain Current (Amps)

VGS= 1.4
1.2
10V
9V VGS=
1.0 1.2
8V 10V D
1.0 9V G
0.8 8V
S
7V
6V
0.8 7V E-Line
0.6
0.6 6V TO92 Compatible
0.4 5V
0.4 5V ABSOLUTE MAXIMUM RATINGS.
0.2 4V 4V
0.2 PARAMETER SYMBOL VALUE UNIT
0 3V 3V
0 Drain-Source Voltage V DS 100 V
0 10 20 30 40 50 0 2 4 6 8 10
Continuous Drain Current at T amb=25°C ID 200 mA
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I DM 2 A
Output Characteristics Saturation Characteristics Gate-Source Voltage V GS ± 20 V
Power Dissipation at T amb=25°C P tot 625 mW
ID(On)-On-State Drain Current (Amps)

1.4 Operating and Storage Temperature Range T j :T stg -55 to +150 °C

10
VDS-Drain Source Voltage (Volts)

VDS=
1.2
8
25V ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
1.0
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
6 0.8
Drain-Source Breakdown BV DSS 100 V I D=1mA, V GS=0V
ID= 0.6 Voltage
4 1A
0.4
Gate-Source Threshold V GS(th) 0.8 2.4 V ID=1mA, V DS= V GS
2 0.5A 0.2 Voltage
0.2A
0 Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V
0
0 4 8 12 16 20 0 2 4 6 8 10
Zero Gate Voltage Drain I DSS 1 µA V DS=100V, V GS=0
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Current 50 µA V DS=80V, V GS=0V, T=125°C (2)

Voltage Saturation Characteristics Transfer Characteristics On-State Drain Current(1) I D(on) 500 mA V DS=25V, V GS=10V
Static Drain-Source On-State R DS(on) 10 Ω V GS=10V,I D=500mA
Resistance (1)
RDS(ON) -Drain Source Resistance (Ω)

100 2.4
Forward Transconductance(1)(2 g fs 100 mS V DS=25V,I D=500mA
2.2 ID=-0.5A
Normalised RDS(on) and VGS(th)

on
) )
2.0 S(
RD
ce Input Capacitance (2) C iss 40 pF
1.8 an
ist
es
1.6 eR Common Source Output C oss 15 pF V DS=25V, V GS=0V, f=1MHz
rc
10 1.4 ou
-S Capacitance (2)
ID= 1.2 rain
D
1A
0.5A 1.0 Reverse Transfer Capacitance C rss 5 pF
0.2A 0.8 Gate Thresh
old
(2)
Voltage VGS
(th)
0.6
Turn-On Delay Time (2)(3) t d(on) 5 ns
1 0.4
-80 -60 -40 -20 0 20 40 60 80 100 120 140 160
1 2 3 4 5 6 7 8 9 10 20 Rise Time (2)(3) tr 7 ns V DD ≈25V, I D=500mA
VGS-Gate Source Voltage (Volts) T-Temperature (C°) Turn-Off Delay Time (2)(3) t d(off) 6 ns
On-resistance vs gate-source voltage Normalised RDS(on) and VGS(th) vs Temperature Fall Time (2)(3) tf 7 ns

3-379 3-378
 ZVN3310A
TYPICAL CHARACTERISTICS

160 160
gfs-Transconductance (mS)

gfs-Transconductance (mS)
VDS= 25V
120 VDS= 25V
120

80 80

40 40

0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 12

ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Transconductance v drain current Transconductance v gate-source voltage

VDS=
20V 50V 80V
16
50
VGS-Gate Source Voltage (Volts)

14 ID=0.6A
40
C-Capacitance (pF)

12

10
30
Ciss 8
20 6

4
10
Coss 2
Crss
0
0
0 10 20 30 40 50 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

VDS-Drain Source Voltage (Volts) Q-Charge (nC)

Capacitance v drain-source voltage Gate charge v gate-source voltage

3-380