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    Fabrication Review Murry R PDF

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    Altivar Vsd
    The document describes various techniques used in the fabrication of integrated circuits. It discusses lithography methods like optical lithography, electron beam lithography, and ion beam lithography that are used to transfer patterns onto silicon wafers. Etching techniques like wet etching and dry etching are also covered. In addition, it outlines other processes like diffusion, ion implantation, and thin film deposition that are involved in building up layers on the wafer to create the desired circuit design.

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    Fabrication Review Murry R PDF

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    Altivar Vsd
    101 views46 pages
    The document describes various techniques used in the fabrication of integrated circuits. It discusses lithography methods like optical lithography, electron beam lithography, and ion beam lithography that are used to transfer patterns onto silicon wafers. Etching techniques like wet etching and dry etching are also covered. In addition, it outlines other processes like diffusion, ion implantation, and thin film deposition that are involved in building up layers on the wafer to create the desired circuit design.

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    The document describes various techniques used in the fabrication of integrated circuits. It discusses lithography methods like optical lithography, electron beam lithography, and ion beam lithography that are used to transfer patterns onto silicon wafers. Etching techniques like wet etching and dry etching are also covered. In addition, it outlines other processes like diffusion, ion implantation, and thin film deposition that are involved in building up layers on the wafer to create the desired circuit design.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    101 views46 pages

    Fabrication Review Murry R PDF

    Uploaded by

    Altivar Vsd
    The document describes various techniques used in the fabrication of integrated circuits. It discusses lithography methods like optical lithography, electron beam lithography, and ion beam lithography that are used to transfer patterns onto silicon wafers. Etching techniques like wet etching and dry etching are also covered. In addition, it outlines other processes like diffusion, ion implantation, and thin film deposition that are involved in building up layers on the wafer to create the desired circuit design.

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    Fabrication

    Process
    Murry Raditya. ST
    • PhotoLithography
    • Etching
    • Diffusion
    • Ion Implantation
    • Film Deposition
    • Review of Chipset Fabrication

    Fabrication technique
    Photolithography
    • Optical Lithography
    • Electron Beam Lithography
    • Extreme UV Lithography
    • X-Ray Lithography
    • Ion Beam Lithography

    Techniques
    Optical Lithography
    https://www.memsnet.org/
    Electron Beam Lithography
    Antony D. Han , University of Waterloo, 2006
    Extreme UV
    Lithography
    Dr. J. Ruzyllo, Penn State University, 2006
    • Same as Ultraviolet lithography

    X-Ray
    Lithography
    Matt Shofnos, An-Jou Hsiung
    • Ion beam sources:
    SmallHMolecule
    +, He+, Ga+
    Additives

    Ion Beam Positive


    Radiation
    Resist
    Develop Strip
    Pattern Resist

    Negative
    Substrate

    Ion Beam
    Lithography
    Brian Ellis
    Etching
    Wet Chemical Etching

    Chemical
    Etching

    Dry Chemical Etching

    Variances
    • Sillicon Etching
    • Sillicon Diode Etching
    • Sillicon Nitride and Polysillicon Etching
    • Aluminium Etching
    • Galium Arsenide Etching

    Wet Chemical Etching


    Etching Type
    Basic Mechanism
    • Using HF and HNO3

    Sillicon Etching
    Sillicon Dioxide Etching
    • Plasma
    • Reactive Ion Etching (RIE)
    • High Density Plasma (HDP) Etching

    Dry Chemical Etching


    • Memiliki kelebihan etching
    lebih cepat untuk beberapa
    kasus
    • Anisotropic etching

    Plasma Etching
    Reactive Ion Etching
    Use remote, non-capacitively coupled
    plasma source (Electron cyclotron
    resonance - ECR, or inductively coupled
    plasma source - ICP).
    • Use separate RF source as wafer bias.
    This separates the plasma power (density),
    from the wafer bias (ion accelerating
    field).
    • Very high density plasmas (1011-1012 ion
    cm-3) can be achieved (faster etching).
    • Lower pressures (1-10 mtorr range) can be
    utilized due to higher ionization efficiency
    (longer mean free path and ∴ more
    anisotropic etching).
    • These systems produce high etch rates,
    decent selectivity, and good directionality,
    High Density Plasma
    while keeping ion energy and damage low.

    Etching
    Diffusion
    • Basic Process
    • Extrinsic Diffusion
    • Lateral Diffusion

    Diffusion
    Predeposition : doping often
    proceeds by an initial
    predep step to introduce the
    required dose of dopant into
    the substrate.

    Drive-In : a subsequent
    drive-in anneal then
    redistributes the dopant
    giving the required junction
    depth and surface
    concentration.

    Basic Concept
    Methodes
    Fick’s Laws ( First and Second)
    Ion Implantation
    • Independently control dopant profile (ion
    energy) and dopant concentration (ion
    current times implantation time)
    • Anisotropic dopant profile
    • Easy to achieve high concentration dope of
    heavy dopant atom such as phosphorus and
    arsenic.

    Ion Implanttation
    SiO2 Poly Si P+

    n+ n+

    P-type Silicon

    Ion Implantation for Phosporus


    Ion Implanter
    http://www.spirecorp.com/spire-biomedical/surface-modification-technology/ion-implantation.php
    Film Deposition
    1. Depositions that happen because of a chemical reaction:
    Chemical Vapor Deposition (CVD)
    Electrodeposition
    Epitaxy
    Thermal oxidation

    2. Depositions that happen because of a physical reaction:


    Physical Vapor Deposition (PVD)
    Evaporation
    Sputtering
    Casting

    Thin Film Deposition


    • Variety of Chemical Vapor Depositions are used to layer on subsequent
    Structural and Sacrificial Layers
    • Metals are deposited using PVD (Physical Vapor Deposition – evaporation is
    an example)

    CVD and PVD


    • CVD – Chemical Vapor Deposition
    • APCVD – Atmospheric Pressure CVD
    • LPCVD – Low Pressure CVD
    • PECVD – Plasma Enhanced CVD
    • HDPECVD – High Density Plasma Enhanced CVD

    Chemical Vapor Deposition


    LPCV
    D
    The substrate is placed in a liquid solution (electrolyte). When an electrical potential is
    applied between a conducting area on the substrate and a counter electrode (usually
    platinum) in the liquid, a chemical redox process takes place resulting in the formation of
    a layer of material on the substrate and usually some gas generation at the counter
    electrode.

    Electrodeposition
    A number of gases are introduced in an induction heated reactor where only the substrate is
    heated. The temperature of the substrate typically must be at least 50% of the melting point
    of the material to be deposited.

    Vapor Phase Epitaxy


    Oxidation of the substrate surface in an oxygen rich atmosphere. The temperature is
    raised to 800° C-1100° C to speed up the process. The growth of the film is spurned by
    diffusion of oxygen into the substrate, which means the film growth is actually
    downwards into the substrate. This process is naturally limited to materials that can be
    oxidized, and it can only form films that are oxides of that material. This is the classical
    process used to form silicon dioxide on a silicon substrate.

    Thermal Oxidation (Diffusion


    Proccess]
    The substrate is placed inside a vacuum
    chamber, in which a block (source) of the
    material to be deposited is also located. The
    source material is then heated to the point
    where it starts to boil and evaporate. The
    vacuum is required to allow the molecules
    to evaporate freely in the chamber, and they
    subsequently condense on all surfaces

    Evaporation
    The substrate is placed in a vacuum chamber with the source material, named a target, and an
    inert gas (such as argon) is introduced at low pressure. A gas plasma is struck using an RF
    power source, causing the gas to become ionized. The ions are accelerated towards the surface
    of the target, causing atoms of the source material to break off from the target in vapor form
    and condense on all surfaces including the substrate.

    Sputtering
    In this process the material to be deposited is dissolved in liquid form in a
    solvent. The material can be applied to the substrate by spraying or spinning.
    Once the solvent is evaporated, a thin film of the material remains on the
    substrate.

    Casting
    Review of IC
    Fabrication

    http://casualzone.blogspot.com/2009/12/how-chip-is-made-from-sand-to-silicon.html
    Sand Ingot Wafer
    Slicing
    Photoresist

    Exposure

    Washing Photoresist Exposure


    Etching Remove Photoresist
    Apply Photoresist

    Ion Implantation

    Ready transistor Remove Photoresist


    Electroplating Polishing

    Electrplating

    Wafer slicing Wafer sort test


    Metal layers
    Discard fault dies Individual dies

    Processor

    Packaging
    • “e-Beam Lithography”, Antony D Han
    • “Ion Beam Lithography “, Brian Ellis
    • “Extreme Ultra-Violet Lithography”, Matt Smith

    • “Ion Implantation”, Hong Xiao Ph.D


    • Gary, S, May., Simon, M, Sze., “Fundamentals Of
    Semiconductor Fabrication”, John Wiley & Sons, 2004

    References

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